KR101612400B1 - 막 구조물을 갖춘 열 복사 검출 장치, 그 장치의 제조 방법 및 용도 - Google Patents

막 구조물을 갖춘 열 복사 검출 장치, 그 장치의 제조 방법 및 용도 Download PDF

Info

Publication number
KR101612400B1
KR101612400B1 KR1020097027210A KR20097027210A KR101612400B1 KR 101612400 B1 KR101612400 B1 KR 101612400B1 KR 1020097027210 A KR1020097027210 A KR 1020097027210A KR 20097027210 A KR20097027210 A KR 20097027210A KR 101612400 B1 KR101612400 B1 KR 101612400B1
Authority
KR
South Korea
Prior art keywords
membrane
cover
circuit
detector
thermal radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097027210A
Other languages
English (en)
Korean (ko)
Other versions
KR20100023007A (ko
Inventor
카르스텐 기베러
마티아스 슈라이터
크리스티안 파울러스
Original Assignee
파이레오스 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 파이레오스 엘티디. filed Critical 파이레오스 엘티디.
Publication of KR20100023007A publication Critical patent/KR20100023007A/ko
Application granted granted Critical
Publication of KR101612400B1 publication Critical patent/KR101612400B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0205—Mechanical elements; Supports for optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J5/14—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077—Imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J2005/202—Arrays
    • G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N2021/0106—General arrangement of respective parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Micromachines (AREA)
KR1020097027210A 2007-05-29 2008-05-28 막 구조물을 갖춘 열 복사 검출 장치, 그 장치의 제조 방법 및 용도 Expired - Fee Related KR101612400B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200710024902 DE102007024902B8 (de) 2007-05-29 2007-05-29 Vorrichtung mit Membranstruktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung
DE102007024902.2 2007-05-29

Publications (2)

Publication Number Publication Date
KR20100023007A KR20100023007A (ko) 2010-03-03
KR101612400B1 true KR101612400B1 (ko) 2016-04-14

Family

ID=39708794

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097027210A Expired - Fee Related KR101612400B1 (ko) 2007-05-29 2008-05-28 막 구조물을 갖춘 열 복사 검출 장치, 그 장치의 제조 방법 및 용도

Country Status (10)

Country Link
US (1) US9279730B2 (enExample)
EP (1) EP2153187B1 (enExample)
JP (1) JP2010528300A (enExample)
KR (1) KR101612400B1 (enExample)
CN (1) CN101688810B (enExample)
AU (1) AU2008256413B2 (enExample)
BR (1) BRPI0812099B1 (enExample)
DE (1) DE102007024902B8 (enExample)
RU (1) RU2468346C2 (enExample)
WO (1) WO2008145353A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009017845B4 (de) * 2009-04-17 2011-07-21 Pyreos Ltd. Infrarotlichtsensor mit hoher Signalspannung und hohem Signal-Rausch-Verhältnis, sowie Infrarotlichtdetektor mit dem Infrarotlichtsensor
DE102009060217B3 (de) * 2009-12-23 2011-06-22 Pyreos Ltd. Verfahren zum Herstellen eines Infrarotlichtdetektors
DE102010012701B4 (de) 2010-03-24 2013-10-17 Bundesrepublik Deutschland, vertr.d.d. Bundesministerium für Wirtschaft und Technologie, d.vertr.d.d. Präsidenten der Physikalisch-Technischen Bundesanstalt Mikrokraftsensor
DE102012216618A1 (de) 2012-09-18 2014-03-20 Robert Bosch Gmbh Anordnung von mindestens zwei Wafern zum Detektieren von elektromagnetischer Strahlung und Verfahren zum Herstellen der Anordnung
DE102012217881A1 (de) * 2012-10-01 2014-04-03 Siemens Aktiengesellschaft Sensoranordnung und Herstellungsverfahren
DE102013204763A1 (de) * 2013-03-19 2014-09-25 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung und entsprechendes Herstellungsverfahren
DE212016000103U1 (de) * 2015-06-01 2018-01-14 Seoul Viosys Co., Ltd. Ultraviolett-Messeinrichtung, Fotodetektorelement, Ultraviolett-Detektor, Ultraviolett-Index Berechnungseinrichtung und elektronische Einrichtung mit diesen
CN108827676B (zh) * 2018-04-25 2020-12-11 合肥美的电冰箱有限公司 散热测量系统及其方法、控制装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100919A (ja) * 2001-06-11 2003-04-04 Matsushita Electric Ind Co Ltd 電子デバイス及びその製造方法
JP2003166876A (ja) * 2001-12-04 2003-06-13 Ihi Aerospace Co Ltd 熱型赤外線検出素子およびその製造方法ならびに熱型赤外線検出素子アレイ

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044251A (en) * 1976-05-18 1977-08-23 Minnesota Mining And Manufacturing Company Electromagnetic radiation detector with large area sensing medium
JPH01308927A (ja) * 1988-06-07 1989-12-13 Matsushita Electric Ind Co Ltd 焦電形赤外検出素子アレイ、焦電形赤外検出器およびその製法
GB9009117D0 (en) * 1990-04-24 1990-08-08 Emi Plc Thorn Pyroelectric detector and method of manufacturing the same
JP3200657B2 (ja) * 1992-04-30 2001-08-20 テルモ株式会社 赤外線センサ
JPH07128140A (ja) * 1993-10-29 1995-05-19 Matsushita Electric Works Ltd 赤外線検出素子
EP0734589B1 (en) * 1993-12-13 1998-03-25 Honeywell Inc. Integrated silicon vacuum micropackage for infrared devices
DE19525071A1 (de) * 1995-07-10 1997-01-16 Siemens Ag Pyroelektrisches Bauelement und Verfahren zur Herstellung
JP3399399B2 (ja) * 1999-04-14 2003-04-21 株式会社村田製作所 赤外線センサ及びその製造方法
DE19932308C2 (de) * 1999-07-10 2001-10-25 Bosch Gmbh Robert Sensor, insbesondere Thermosensor
DE10004216C2 (de) * 2000-02-01 2002-09-19 Siemens Ag Vorrichtung zur Detektion von Wärmestrahlung und Verwendung der Vorrichtung
JP2001326367A (ja) * 2000-05-12 2001-11-22 Denso Corp センサおよびその製造方法
DE10042945A1 (de) 2000-08-31 2002-03-28 Siemens Ag Bauelement für Sensoren mit integrierter Elektronik und Verfahren zu seiner Herstellung, sowie Sensor mit integrierter Elektronik
DE10058861A1 (de) * 2000-11-27 2002-06-13 Siemens Ag Infrarotsensor für hochauflösende Infrarot-Detektoranordnungen und Verfahren zu seiner Herstellung
JP2004093535A (ja) * 2002-09-04 2004-03-25 Mitsubishi Electric Corp 熱型赤外線固体撮像装置およびその製造方法
US6902759B2 (en) * 2002-09-12 2005-06-07 Innovaquartz Incorporated Technique for coating or marking glass strands
FR2844635B1 (fr) * 2002-09-16 2005-08-19 Commissariat Energie Atomique Dispositif detecteur de rayonnement electromagnetique avec boitier integre comportant deux detecteurs superposes
JP2004239708A (ja) * 2003-02-05 2004-08-26 Mitsubishi Electric Corp 赤外線検出装置およびその製造方法
KR100538996B1 (ko) * 2003-06-19 2005-12-27 한국전자통신연구원 적외선 흡수층으로 실리콘 산화막을 사용한 적외선 센서및 그 제조 방법
DE10327694A1 (de) * 2003-06-20 2005-01-05 Robert Bosch Gmbh Optische Sensoranordnung und entsprechendes Herstellungsverfahren
RU2258207C1 (ru) * 2004-01-09 2005-08-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" Болометрический резистивный элемент
JP2005241457A (ja) * 2004-02-26 2005-09-08 Hamamatsu Photonics Kk 赤外線センサ及びその製造方法
FR2867273B1 (fr) * 2004-03-04 2006-09-08 Commissariat Energie Atomique Procede de realisation d'un dispositif pour la detection thermique d'un rayonnement comportant un microbolometre actif et un microbolometre passif
JP4385255B2 (ja) * 2004-06-10 2009-12-16 日本電気株式会社 ボロメータ型赤外線検出器及び残像の低減方法
JP2005043381A (ja) * 2004-10-18 2005-02-17 Nec Corp 熱型赤外線検出器およびその製造方法
US7718967B2 (en) * 2005-01-26 2010-05-18 Analog Devices, Inc. Die temperature sensors
FR2883417B1 (fr) * 2005-03-16 2007-05-11 Ulis Soc Par Actions Simplifie Detecteur bolometrique, dispositif de detection infrarouge mettant en oeuvre un tel detecteur et procede de fabrication de ce detecteur
CN101213429B (zh) * 2005-06-27 2012-02-08 Hl-平面技术有限公司 用于检测电磁波的器件以及生产这样的器件的方法
WO2007054111A1 (de) * 2005-11-10 2007-05-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensor zum erfassen einer elektromagnetischen strahlung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100919A (ja) * 2001-06-11 2003-04-04 Matsushita Electric Ind Co Ltd 電子デバイス及びその製造方法
JP2003166876A (ja) * 2001-12-04 2003-06-13 Ihi Aerospace Co Ltd 熱型赤外線検出素子およびその製造方法ならびに熱型赤外線検出素子アレイ

Also Published As

Publication number Publication date
BRPI0812099A2 (pt) 2014-11-25
US9279730B2 (en) 2016-03-08
WO2008145353A1 (de) 2008-12-04
DE102007024902B8 (de) 2010-12-30
DE102007024902B4 (de) 2010-08-26
JP2010528300A (ja) 2010-08-19
RU2009144001A (ru) 2011-07-10
AU2008256413A1 (en) 2008-12-04
CN101688810B (zh) 2013-09-18
KR20100023007A (ko) 2010-03-03
EP2153187B1 (de) 2013-01-16
BRPI0812099B1 (pt) 2018-06-19
CN101688810A (zh) 2010-03-31
DE102007024902A1 (de) 2008-12-11
AU2008256413B2 (en) 2013-09-12
US20110006211A1 (en) 2011-01-13
RU2468346C2 (ru) 2012-11-27
EP2153187A1 (de) 2010-02-17

Similar Documents

Publication Publication Date Title
KR101612400B1 (ko) 막 구조물을 갖춘 열 복사 검출 장치, 그 장치의 제조 방법 및 용도
US20090134481A1 (en) Molded Sensor Package and Assembly Method
JP4160083B2 (ja) 光学装置用モジュール及び光学装置用モジュールの製造方法
KR100755165B1 (ko) 반도체 장치, 광학 장치용 모듈 및 반도체 장치의 제조 방법
US7001797B2 (en) Optical device and method of manufacturing the same, optical module, circuit board, and electronic instrument
US20160141219A1 (en) Chip package and method for forming the same
CN108291840A (zh) 晶圆级封装件中的热红外传感器阵列
KR101496673B1 (ko) 샌드위치 구조물을 갖춘 열 복사 검출 장치, 그 장치의 제조 방법 및 용도
CN103119925A (zh) 红外摄像机架构系统和方法
US9236276B2 (en) Semiconductor device and method for manufacturing the same
JP5389045B2 (ja) 遮蔽されたサンドイッチ構造を有する熱放射の検知用素子とその使用
JP2004193600A (ja) 半導体装置及びその製造方法、半導体装置用カバー並びに電子機器
JP4138436B2 (ja) 光モジュール、回路基板及び電子機器
KR100354114B1 (ko) 씨모스 이미지 센서용 패키지와 그 제조 방법
JP2004282227A (ja) 光モジュール及びその製造方法並びに電子機器
WO2005091380A1 (en) Infra red sensing devices

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190408

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190408

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000