KR101599577B1 - 노광 장치, 노광 장치의 제어 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 장치의 제어 방법 및 디바이스 제조 방법 Download PDF

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Publication number
KR101599577B1
KR101599577B1 KR1020130034166A KR20130034166A KR101599577B1 KR 101599577 B1 KR101599577 B1 KR 101599577B1 KR 1020130034166 A KR1020130034166 A KR 1020130034166A KR 20130034166 A KR20130034166 A KR 20130034166A KR 101599577 B1 KR101599577 B1 KR 101599577B1
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KR
South Korea
Prior art keywords
wafer
alignment mark
resist
substrate
layer
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KR1020130034166A
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English (en)
Korean (ko)
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KR20130111423A (ko
Inventor
노리토시 사카모토
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020130034166A 2012-03-30 2013-03-29 노광 장치, 노광 장치의 제어 방법 및 디바이스 제조 방법 Active KR101599577B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-082090 2012-03-30
JP2012082090A JP5984459B2 (ja) 2012-03-30 2012-03-30 露光装置、露光装置の制御方法及びデバイス製造方法

Publications (2)

Publication Number Publication Date
KR20130111423A KR20130111423A (ko) 2013-10-10
KR101599577B1 true KR101599577B1 (ko) 2016-03-03

Family

ID=49234586

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130034166A Active KR101599577B1 (ko) 2012-03-30 2013-03-29 노광 장치, 노광 장치의 제어 방법 및 디바이스 제조 방법

Country Status (4)

Country Link
US (1) US9097991B2 (https=)
JP (1) JP5984459B2 (https=)
KR (1) KR101599577B1 (https=)
CN (1) CN103365115B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11366397B2 (en) 2013-07-10 2022-06-21 Qoniac Gmbh Method and apparatus for simulation of lithography overlay
US10379447B2 (en) * 2013-07-10 2019-08-13 Qoniac Gmbh Method and apparatus for simulation of lithography overlay
KR101752761B1 (ko) * 2016-12-14 2017-06-30 (주)이즈미디어 테이블 틸팅 확인 장치 및 확인 방법
JP7173891B2 (ja) * 2019-02-14 2022-11-16 キヤノン株式会社 計測装置、露光装置、および物品製造方法
KR102804207B1 (ko) 2022-10-04 2025-05-09 세메스 주식회사 기판 검사 장치 및 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194419A (ja) 2006-01-19 2007-08-02 Seiko Epson Corp 露光処理方法及び、半導体装置の製造方法

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US4001774A (en) 1975-01-08 1977-01-04 Exxon Production Research Company Method of transmitting signals from a drill bit to the surface
JP2816272B2 (ja) 1992-05-12 1998-10-27 株式会社日立製作所 位置決め装置
JP2646417B2 (ja) 1992-10-30 1997-08-27 キヤノン株式会社 露光装置
JPH0766115A (ja) 1993-08-23 1995-03-10 Canon Inc 露光装置
JP3634068B2 (ja) 1995-07-13 2005-03-30 株式会社ニコン 露光方法及び装置
KR19980019031A (ko) 1996-08-27 1998-06-05 고노 시게오 스테이지 장치(a stage apparatus)
JPH1154423A (ja) 1997-07-31 1999-02-26 Horiba Ltd 露光装置
US6376329B1 (en) * 1997-08-04 2002-04-23 Nikon Corporation Semiconductor wafer alignment using backside illumination
JP4434372B2 (ja) * 1999-09-09 2010-03-17 キヤノン株式会社 投影露光装置およびデバイス製造方法
JP2002203773A (ja) * 2000-12-28 2002-07-19 Canon Inc 露光装置
KR100579603B1 (ko) 2001-01-15 2006-05-12 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치
TW569368B (en) * 2001-11-14 2004-01-01 Tokyo Electron Ltd Substrate inspecting apparatus, coating and developing apparatus, and substrate inspecting method
KR100809955B1 (ko) * 2001-11-27 2008-03-06 삼성전자주식회사 포토리소그래피 공정의 얼라인 계측방법
JP3890233B2 (ja) 2002-01-07 2007-03-07 キヤノン株式会社 位置決めステージ装置、露光装置及び半導体デバイスの製造方法
JP2003224057A (ja) * 2002-01-30 2003-08-08 Hitachi Ltd 半導体装置の製造方法
AU2003252349A1 (en) * 2002-07-31 2004-02-16 Nikon Corporation Position measuring method, position control method, exposure method and exposure apparatus, and device manufacturing method
JP2006269669A (ja) * 2005-03-23 2006-10-05 Canon Inc 計測装置及び計測方法、露光装置並びにデバイス製造方法
JP5489849B2 (ja) * 2010-05-11 2014-05-14 キヤノン株式会社 位置計測装置及び方法、露光装置並びにデバイス製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194419A (ja) 2006-01-19 2007-08-02 Seiko Epson Corp 露光処理方法及び、半導体装置の製造方法

Also Published As

Publication number Publication date
US9097991B2 (en) 2015-08-04
JP5984459B2 (ja) 2016-09-06
US20130258308A1 (en) 2013-10-03
CN103365115A (zh) 2013-10-23
CN103365115B (zh) 2016-01-27
KR20130111423A (ko) 2013-10-10
JP2013211488A (ja) 2013-10-10

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