TWI358529B - Shape measuring apparatus, shape measuring method, - Google Patents

Shape measuring apparatus, shape measuring method, Download PDF

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TWI358529B
TWI358529B TW096143948A TW96143948A TWI358529B TW I358529 B TWI358529 B TW I358529B TW 096143948 A TW096143948 A TW 096143948A TW 96143948 A TW96143948 A TW 96143948A TW I358529 B TWI358529 B TW I358529B
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Taiwan
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light
measurement
wafer
measuring
measurement target
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TW096143948A
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TW200834038A (en
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Takahiro Matsumoto
Ryo Sasaki
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Canon Kk
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

1358529 九、發明說明 【發明所屬之技術領域】 本發明係有關於一種形狀測量設備其被建構來測量一 測量目標物的表面形狀（外形或輪廓），一種形狀測量方法 ，其被建構來測量一測量目標物的表面形狀，及一種包括 該形狀測量設備的曝光設備。 【先前技術】 作爲一形狀測量設備及一包含此形狀測量設備的曝光 設備的背景技術，下面的說明係以一要求嚴苛的表面行狀 測量精確度之半導體曝光設備作爲例子來描述。 當一半導體裝置或一液晶顯示器裝置用微影成像技術 來製造時，一投影曝光設備即被使用，其中畫在一標線板 上的電路圖案爲了曝光而被一投影光學系統投影至一晶圓 上。 在該投影曝光設備中，隨著半導體裝置集積密度的提 高，畫在該標線板上的電路圖案被要求以更高的解析度被 投影以利於曝光到該晶圓上。可由該投影曝光設備轉移之 最小的尺度（或最細的解析度）與用於曝光的光線的波長成 正比且與該投影光學設備的數値孔徑（NA)成反比。因此， 曝光的光線的波長愈短，其解析度就愈高。因此之故，最 近業界使用的是具有較短波長的光源，譬如KrF準分子雷 射（其波成約爲248奈米）及ArF準分子雷射（其波長約爲193 奈米）。而且，浸液曝光技術的使用已被提出。此外，亦 -4- 1358529 要求曝光面積的進一步擴大。 爲了要滿足這些需求，一掃描器已被主要地用來取代 —步進·及-重復曝光設備（亦被稱爲一 ”步進器”），其中― 次一個大致矩形的曝光區域以縮影（reduction)方式被曝照 至一晶圓上。該掃描器爲一步進-及-掃描曝光設備，其中 一曝光區域被形成爲一矩形狹縫且一標線板與一晶圓在高 速下被相對地掃描，藉此以高精密度在高速下實施大區域 的曝光。 在該掃描器中，在該晶圓的一預定的位置到達該曝光 狹縫區域之前，該晶圓之在該預定位置的一表面位置被一 表面位置測量單元（焦聚控制感測器）用一光線傾斜入射系 統加以測量。根據該晶圓之被測量的表面位置，一用於將 該晶圓表面與一最佳成像表面對準的校正在該晶圓的該預 定的位置被曝光時被實施。 詳言之，多個測量點沿著曝光狹縫的長度方向（即， 沿著一垂直於該掃描方向的方向）被設置在該曝光狹縫內 用以不只測量該晶圓表面位置的高度（即，”焦距”），亦測 量該晶圓表面的傾斜（即，”傾斜度”）。作爲測量焦距與傾 斜度的方法，有一種使用一光學感測器的方法（參見曰本 專利公開第6-260391號及美國專利第6,249,351號），及一 種使用一氣體計感測器的方法（參見Pamphlet的國際公開 第W02005/0 22082號），及一種使用電容感測器的方法。 然而，在最近幾年，因爲使用波長較短的曝光光線及 較高的投影光學系統的數値孔徑，所以焦點深度變得極小 -5- 1358529 ’使其更難在對準該被曝光的晶圓表面與該最佳成像表面 時達到令人滿意的精確度，這被稱之爲聚焦精確度。換言 之’某些因子變得無法被忽略，這些因子包括在該晶圓上 之一圖案的影響及該表面位置測量設備在測量上的誤差， 這些對於塗在該晶圓上的光阻層的厚度的不均勻度上均有 影響。 例如，該光阻層在厚度上的不均勻會造成在靠近一周 邊電路圖案及一刻畫線的一高度差，這對於焦距測量是很 嚴重的，雖然它比焦點深度小。因此，該光阻表面的一傾 斜角度被增加至一程度，該程度讓被反射的光線（其被該 表面位置測量設備偵測到）因爲反射及/或折射的關係而偏 離一鏡子反射的角度。又，該晶圓上之圖案的粗糙度/細 緻度上的差異產生介於一細微圖案區與一粗糙圖案區之間 在反射性上的差異。因此，因爲在被該表面位置測量設備 偵測到之反射的角度上及被反射的光線的強度上的改變， 一得自於偵測該被反射的光線的訊號的波形變成不對稱且 會造成測量誤差。 圖1 8爲一示意圖其顯示測量光MM被照射到一晶圓SB 上的例子，該晶圓當使用揭露於日本專利公開第6-26039 1 號中的光學感測器時在反射性上具有一差異。在所示的例 子中，該測量光MM相對於一介於兩個在反射性上有差異 的區域之間的邊界線傾斜一角度A，且該測量是在一被標 記爲α’的方向上實施的。圖19畫出被反射的光線在三個 剖面上的強度分佈，這三個剖面彼此間隔開於一標記爲冷 -6- 1358529 ’的方向上，即剖面A A ’，剖面B B ’，及剖面C C ’。如圖1 9 中所見，該被反射的光線在剖面AA’及CC’上具有良好的 對稱性，而該被反射的光線在剖面BB’上具有不對稱的輪 廓，該剖面BB’包括反射性不同的區域。此一不對稱輪廓 將該質心（barycenter)移動於該被反射的光線的分佈中並 造成一測量誤差。因此，該晶圓表面無法以高精準度來測 量且會產生大的散焦，因此造成一晶片的失效。 圖15顯示揭露於美國專利第6,249,351號中的一形狀 測量設備，其中光線被傾斜地照射到一基材上且該基材的 形狀根據所得到的干涉訊號來測量。該被揭露的形狀測量 設備包括一光源101，一透鏡103，一分束器105，一參考 鏡130，一驅動機構397，一由光柵所形成集束器170，透 鏡171及173，及一拾像元件190。來自該光源101的寬頻光 (白光）經由該透鏡103被導入分束器105且被分成參考光與 測量光，該參考光被該參考鏡1 3 0反射且該測量光被一作 爲樣本的晶圓3 60反射。這些被反射的光被用光柵所形成 的集束器170結合起來。該參考光與該測量光彼此干涉， 且所得到之干涉光經由透鏡171及173被引導至該拾像元件 190。 該被揭露的形狀測量設備亦具有表面形狀因爲在該晶 圓3 60上的電路圖案的影響而被錯誤地測量的問題。此問 題將參照圖16，17A及17B來加以描述。 圖16畫出在圖15的形狀測量設備中當該晶圓360被該 驅動機制3 9 7移動於一垂直於該晶圓表面的方向時所獲得 1358529 之俗稱”白干涉訊號（white interference signal)”的強度。 在圖16的例子1中的一訊號代表測量的晶圓360上的結構沒 有圖案形成在該晶圓360上只有一光阻層被塗在其上（如， 圖17A所示）的情形。在另一方面，在圖16的例子2中的一 訊號代表測量的晶圓3 60上具有更常見的結構其中有一圖 案形成在該晶圓3 60上且一光阻層被塗在該圖案上（如，圖 17B所示）的情形。 查看圖16，在於例子1的訊號相比較時，例子2中的訊 號受到晶圓360上的圖案的影響使得干涉訊號被部分地變 形。該干涉訊號的變形係歸因於圖1 5之特定的形狀測量設 備的系統，其中如圖1 7B所示，光被傾斜地照射到該晶圓 360的表面上且從該晶圓表面被反射的光被接收。更明確 地，當晶圓360在垂直於該晶圓360的該表面的方向上被掃 描時，被該測量光照射之在晶圓3 60上的位置被偏移且在 該晶圓3 60上的一測量點被改變。因此，該被反射的光的 強度因爲該晶圓上的電路圖案的影響而被改變，因而無法 獲得一正確的干涉訊號。圖17 A及17B中之光的射線只代 表穿過該光阻表面且被晶圓表面反射的光。在圖16的例子 2中，因爲反射性被部分地提高，所以白干涉訊號的高峰 位置被改變且最終將於測量該晶圓的輪廓所獲得之數値中 產生誤差。 又，使用描述於Pamphlet的國際公開第W02005/ 022082號中的一氣體計感測器的方法具有的問題爲混在該 氣體內之微小顆粒被朝向該晶圓噴灑。另一個問題爲，該 -8 - 1358529 方法無法使用在真空中操作的曝光設備上，如EUV (極端 紫外線）曝光設備，因爲真空會被該氣體破壞掉。 【發明內容】 本發明係有關於一種測量設備，形狀測量方法及曝光 設備。 依據本發明的一個面向，一種形狀測量方法被提供， 其可減小在一測量目標物的表面上之反射性分佈的影響。 依據本發明的一個面向，一種用來測量一測量目標物 的表面形狀的測量方法包括將來自一光源的光分成測量光 及參考光’該測量光傾斜地入射到該測量目標物的表面上 ’該參考光入射到一參考鏡上，將被該測量目標物所反射 的該測量光與被該參考鏡所反射的該參考光引導至一光電 轉換元件’在移動該測量目標物的同時用該光電轉換元件 來偵測由該測量光與該參考光所形成的干涉光，及根據由 該測量光所得到之干涉訊號來測量該測量目標物的表面形 狀’該測量光是在該測量目標物的表面上的同一位置處被 反射的測量光。 依據本發明的另一面向，一種形狀測量設備被提供， 其被建構來測量一測量目標物的表面形狀。該設備包括一 光發射光學系統其被安排來將來自一光源的光分成測量光 與參考光’該測量光傾斜地入射到該測量目標物的表面上 ’該參考光入射到一參考鏡上；一光接受光學系統其被安 排來將被該測量目標物所反射的該測量光與被該參考鏡所 -9- 1358529 反射的該參考光引導至一光電轉換元件；及一驅動機制其 被建構來移動該測量目標物。當該測量目標物被移動時， 該光電轉換元件偵測由該測量光與該參考光所形成的干涉 光。該測量目標物的表面形狀係根據由該測量光所得到之 干涉訊號來測量該測量目標物的表面形狀，該測量光是在 該測量目標物的表面上的同一位置處被反射的測量光》 本發明的其它特徵與面向從下面參照附圖之示範性實 施例的描述中將備得更明顯。 【實施方式】 本發明的各種示範性實施例將參照附圖加以描述。應 注意的是，在附圖中，類似的構件被標以相同的標號且至 些構件之重復的說明將被省略。 第一示範性實施例 圖1爲一示意圖其顯示依據本發明的第一示範性實施 例的形狀測量設備200。該形狀測量設備200測量一作爲一 測量目標物之基材6的表面，即在χγ平面上的每一測量點 的高度資訊（Z位置）。而且，該形狀測量設備200測量在該 XY平面上一預定的區域內的平均高度及平均傾斜度資訊（ ωχ’ wy)。又，當多個薄膜被形成在該基材6上時，該形 狀測量設備200測量一最上面的薄膜的表面，介於相鄰薄 膜之間的界面’及該基材6本身的表面的任何一者的高度 資訊。 -10- 1358529 該形狀測量設備200是由一光發射光學系統，一桌台 系統，一光接受光學系統，及一資料處理系統構成的。 該光發射光學系統包括一光源1，一聚光透鏡2其被安 排來將從該光源發出的光聚集起來，一針孔3及一透鏡4, 平行光經過它們被照射到基材6上，及一分束器5a其被安 排來將該光線分束。該光源1爲一LED(包括俗稱的白光 LED)或一鹵素燈泡，它發出具有寬波長寬度的寬頻光。 該分束器5 a將來自該光源1的該寬頻光分成複數調光束。 該桌台系統是由一基材夾頭CK所構成，其將該測量 目標物（基材）6夾持住，及一驅動機制其精確地對準（登記） 該測離量目標物的位置。該驅動機制包括一 Z桌台8，一 Y 桌台9及一 X桌台10。 該光接受光學系統是由一分束器5b，一拾像元件（光 電轉換元件）14，譬如一CCD或CMOS感測器，一成像光學 系統其由透鏡11及13構成它們被安排來將該基材6的表面 成像於該拾像元件14上，及一孔徑擋止件12。該分束器5b 將被該參考鏡7反射的光與被該基材6反射的光彼此結合起 來。 該資料處理系統是由一處理單元50，一儲存單元51， 及一用來將測量的結果及測量條件顯示出來的顯示設備5 2 構成。 在第一示範性實施例中的構件的詳細功能將於下文中 描述。在圖1中，從該光源1發出的光被該聚光透鏡2聚嚼 到該針孔3且被該透鏡4形塑成平行光。被形塑成平行光的 1358529 光束以一 0角度的入射角撞擊到該基材6。因爲分束器5a 被設置在平行光的路徑的半途，所以一具有總光線數量的 1/2的光束被該分束器5 a反射並以與基材6的入射角相同的 0角度入射角撞擊到該參考鏡7上。 從光源1發出的光較佳地具有400奈米至約800奈米的 波長頻寬。然而，被發射出之光線的波長頻寬並不侷限於 此範圍且亦可被設定在不小於100奈米的範圍。如果一光 阻被塗在該基材6上的話，則具有紫外線波長不大於3 50奈 米）的光爲了防止光阻被曝光而不應照射在該基材6上。該 光線的極化狀態被設定爲一非極化或一被圓形地極化的狀 態。當入射到該基材上的光線的入射角度0角加大時，在 該基材6上的一薄膜的正面處的反射性相較於該薄膜的背 面的反射性而言被相對地提高了。因此，當該薄膜的正面 的形狀被測量時，該入射角Θ角最好是被儘可能大地被設 置。在另一方面，如果該入射角0角接近9 0度的話，則在 組裝該光學系統時就會產生困難。因此之故，該入射角0 角於實際例子中較佳地被設定在70度至85度之間的範圍內 〇 該分束器5a可被形成爲一立方體分束器，其中一金屬 膜，一介電多層膜，或類此者被用作爲一分光膜。或者， 該分束器5a亦可被形成爲一薄膜分束器其是由一（碳化砂 或氮化矽的）薄膜所製成，其厚度爲1微米至5微米。 已經通過該分束5a的光被照射在該基材6上，且被基 材6反射的光（在下文中被稱爲”測量光，，）進入到分束器5b -12- 1358529 。在另一方面，被分束器5 a反射的光被照射到該參考鏡7 上，且被參考鏡7反射的光（在下文中被稱爲”參考光”）進 入分束器5b。該參考鏡7可用一表面精確性爲10奈米至20 奈米的鋁平面鏡，或一具有相容的表面精確性的玻璃平面 鏡來形成。 被基材6反射的該測量光與被該參考鏡7反射的該參考 光被該分束器5b將它們彼此結合在一起且兩者都被該拾像 元件14當作干涉光加以偵測。該分束器5b可用與分束器5a 相同的方式被形成。透鏡11及13及孔徑擋止件12被設置在 該被結合的光的路徑的半途處，用以實施下面的功能。該 透鏡1 1及1 3形成遠心成像光學系統1 6。基材6與該拾像元 件14各自的光受表面係以莎姆（Scheimpflug)關係相關於該 成像光學系統16被設置。因此，基材6的表面被成像在該 拾像元件1 4的光接受表面上。設置在該成像光學系統1 6的 瞳孔位置的該孔徑擋止件12是用來具體指定該成像光學系 統16的數値孔徑（NA)，使得該NA被設定在一極小的値， 其範圍在sin(0.5°)至sin(5°)之間。在該拾像元件14的光接 受表面上，該測量光與該參考光彼此被重疊用以造成這兩 種光的干涉，藉以形成干涉條紋（interference fringe)。 現將描述形成一干涉訊號的方法，該干涉訊號在第一 示範性實施例中是一個重點。在圖1中，基材6是被該基材 夾頭CK所固持且被放置在該Z桌台8，該Y桌台9及該X桌 台10上。該Z桌台8與該Y桌台9被驅動用以在該拾像元件 14產生一白光干涉訊號，如圖6所示。在此情況中，該Z桌 -13- 1358529 台8與該Y桌台9被同時驅動使得基材6被移動於一方向上 ，該方向爲被基材6反射的光線前進的方向（g卩，該光線以 與入射角0角相同的角度被反射的方向）。換言之，該Z桌 台8與該Y桌台9被驅動使得被驅動Zs量的Z桌台與被驅動 Ys量的桌台Y永遠都滿足Ys/Zs = tan0。在該拾像元件14之 對應至基材6上的每一反射點的每一像素的光強度被儲存 在該儲存單元51。當改變該基材6的一將被測量的區域時 ，上述的測量在藉由驅動該X桌台10與該Y桌台9來移動該 基材6上之所想要的區域與該拾像元件14的光接受區域對 準之後即被實施。該X桌台10，該Y桌台9與該Z桌台8可藉 由以一對一的關係對三個軸線X -軸，Y -軸及Z -軸以及兩個 傾斜軸ω X及ω y提供五個測量干涉計，及藉由根據該等干 涉計的輸出來執行閉迴路控制來加以高精密地控制。因此 ，可提高形狀測量的精確度。詳言之，當該基材6之將被 測量的整個形狀被分割成多個區域時，多組形狀資料可藉 由使用這些干涉計來將它們彼此更精確地綴補起來。 現將描述一種經由該拾像元件1 4所測得並儲存在該記 億體內之該白光干涉訊號的訊號處理來獲得該基材6的形 狀的方法。圖6顯示在該拾像元件1 4的一中心像素處獲得 之白光干涉訊號。 該白光干涉訊號亦被稱爲一干涉影像圖 (intergerogram)。在圖6中，水平軸代表在Z桌台與γ桌台 已被驅動之後Z軸測量干涉計測得的數値，及垂直軸代表 該拾像元件14的輸出。除了干涉計之外’一電容感測器亦 -14- 1358529 可被用作爲一測量感測器。該測得的高度値係係藉由計算 該白光干涉訊號的波峰位置並決定該z軸測量干涉計對應 於該波峰位置之測得的數値而獲得的。藉由測量該拾像元 件1 4的所有像素的高度，即可測得該基材的三維度形狀。 該訊號波峰位置可藉由使用一以該訊號波峰位置及它附近 的其它幾個點的資料爲根據的曲線（如，二次方程式曲線） 的近似値來計算出來。此一近似値可讓該波峰位置在1/10 至1/50範圍內的Z軸（即，圖6的水平軸）取樣節距Zp下被計 算出來。實際上，該取樣節距ZP可藉由以一固定的節距ZP 一步一步地驅動該Z桌台來達成（同一時間亦一步一步地驅 動該Y桌台）。然而，爲量速度，該Z桌台與該Y桌台較佳 地係以固定的速度被驅動同時保持YSP/ZSP = tan 0 ( 0爲入 射角）的關係’其中zSP爲z桌台的驅動速度及YSP爲Y桌台 的驅動速度。在後者的例子中，該Z軸測量干涉計的輸出 (Z位置）被讀取的時機與讀取該拾像元件14的輸出的時機 同步。 該訊號波峰位置可藉由已知技術中的一適當的技術來 測得’如FDA方法（參見美國專利第5,3 98，1 13號）。當使用 FDA方法時’波峰位置係藉由使用一傅立葉頻譜的相位梯 度來決定的。 因此，在決定解析度上及使用該白光干涉訊號的測量 方法的精確性上的關鍵點在於如何精確地獲得該測量光與 該參考光之間的路徑長度差爲0(零）的位置。爲了要儘可 能地達到高精確度，除了該FDA方法之外，亦有其它各種 -15- 1358529 方法被提出，例如一種用相移方法或傅立葉轉換方法來決 定白光干涉條紋的圍繞線並從條紋對比上的一最大値位置 來獲得路徑差直爲零的位置的方法，以及一相位交聯方法 〇 以上所述之訊號處理係由處理單元5 0來執行，用以獲 得代表該基材6的表面形狀的資料。所獲得之形狀資料被 儲存在該儲存單元51中且被顯示在該顯示設備52上。 第一示範性實施例的優點將參照圖2來描述。圖2顯示 圖1的形狀測量設備的一部分的放大示圖。在圖2中，三個 測量點A 1，B 1及C 1存在於將被該Z軸測量干涉計測量之基 材6的表面上，且對應於此等測量點的三個測量點A，B及 C存在於該拾像元件14上。而且，圖2顯示當該Z桌台被驅 動用以從Z座標Z1的位置移動至Z座標Z2的位置時在該基 材6上的各個測量點Al，B1及C1的位置。藉由驅動該z桌 台與Y桌台平行於被基材6所反射的光線的方向上，在基 材6上的測量點與在該拾像元件1 4上的測量點的影像之間 的關係就不會被改變。此特徵可讓測量在該Z桌台被驅動 時不受基材6上的圖案分佈（即，反射性分佈）的影響。 第二示範性實施例 接下來，一種依據本發明的第二示範性實施例的形狀 測量設備200將被詳細地描述.。圖3爲一示意圖其顯示依據 笨發明的另一面向（第二示範性實施例）的形狀測量設備 200 ° -16- 1358529 依據本發明的第二示範性實施例的形狀測量設備200 是由一光發射光學系統，一桌台系統，一光接受光學系統 ，及一資料處理系統所構成的。該光發射光學系統更包括 一光源1及一聚光透鏡2。該光發射光學系統更包括一狹縫 板30，一由透鏡4及23所製成的成像光學系統24，一孔徑 擋止件22，及一分束器5a。 該桌台系統由一固持作爲一測量目標物的基材6的基 材夾頭CK，及一包括一Z桌台8，Y桌台9及一 X桌台10之 驅動機制構成的。該資料處理系統是由一處理單元50，一 用來儲存資料的儲存單元5 1，及一用來顯示測量結果與測 量條件的顯示設備52所構成。 在第二示範性實施例中之構件的詳細功能將於下文中 描述。在圖3中，從光源1發出的光被聚光透鏡2會聚到該 狹縫板30上。該狹縫板30具有一帶有一狹縫之矩形的透光 (狹縫）區域，該狹縫寬度爲50微米及在該X軸的方向上之 700微米的長度，使得一矩形影像被該拾像元件14形成在 基材6及參考鏡7上。一已經通過該成像光學系統24的光線 的一主要光束以Θ角度的入射角撞擊到該基材6。因爲分 束器5a被設置在平行光的路徑的半途，所以一具有總光線 數量的1/2的光束被該分束器5a反射並以與基材6的入射角 相同的0角度入射角撞擊到該參考鏡7上。 已經通過該分束5a的光被照射在該基材6上，且被基 材6反射的光（在下文中被稱爲”測量光”）進入到分束器5b 。在另一方面，被分束器5 a反射的光被照射到該參考鏡7 -17- 1358529 上，且被參考鏡7反射的光（在下文中被稱爲”參考光”）進 入分束器5b。因爲該光源1，光線的極化狀態，入射角度 0，該分束器，該參考鏡等等都與第一示範性實施例相同 ，所以這些構件的詳下說明將被省略。 被基材6反射的該測量光與被該參考鏡7反射的該參考 光被該分束器5b將它們彼此結合在一起且兩者都被該拾像 元件14當作干涉光加以偵測。該分束器5b可用與分束器5a 相同的方式被形成。透鏡11及13及孔徑擋止件12被設置在 該被結合的光的路徑的半途處，用以實施下面的功能。該 透鏡11及13形成遠心成像光學系統16，使得基材6的表面 被成像在該拾像元件14的光接受表面上。因此，在第二示 範性實施例中，該狹縫板30的透光缺域（狹縫）被該成像光 學系統24成像在基材6及該參考鏡7上作爲該狹縫影像30i ，且它被該成像光學系統16進一步成像在該拾像元件14上 〇 設置在該成像光學系統1 6的瞳孔位置的該孔徑擋止件 12是用來具體指定該成像光學系統16的數値孔徑（NA)，使 得該NA被設定在一極小的値，其範圍在 sin(0.5°)至sin(5°)之間。在該拾像元件14的光接受表面上 ’該測量光與該參考光彼此被重疊用以造成這兩種光的千 涉，藉以形成干涉條紋。 —種獲得一干涉訊號的方法及一種處理該干涉訊號的 方法可以和上文中描述的第一示範性實施例的方法相類似 地被實施，因此這些方法的描述將不再此處重復。 -18- 1358529 依據第二示範性實施例’因爲光被聚集到該狹縫板3〇 的透光的狹縫區域’所以可得密度更高之光線強度且與第 一示範性實施例比較起來’形狀測量可在更高的S/N比下 被實施。雖然第二示範性實施例在每一光束可測量的面積 受限於該可透光的狹縫區的面積且比第一示範性實施例窄 ，這點上是不利的，但該第二示範性實施例在該基材6上 的測量點每一個都具有一相對小的面積且以分散的方式被 安排時是有效的。當測量基材6上的多個區域的形狀時， 在驅動該X桌台與該Y桌台用以將可透光的狹縫區域與該 基材6上的一所想要的位置對準之後，獲得及處理干涉訊 號的操作可如第一示範性實施例般地被實施。 第三示範性實施例 接下來’一種依據本發明的第三示範性實施例的形狀 測量設備200將被詳細地描述。圖4爲一示意圖其顯示依據 笨發明的另一面向（第三示範性實施例）的形狀測量設備 200 = 因爲依據本發明的第三示範性實施例的形狀測量設備 200的結構與第二示範性實施例的結構相同，所以其描述 將不在此處重復。在第一及第二示範性實施例中，當該干 涉訊號被獲得時’該Z桌台及該Y桌台被驅動用以將該基 材6移動於於光線被該基材6反射的方向平行的方向上。在 另一方面’在第三示範性實施例中，當該干涉訊號被獲得 時只有Z桌台被驅動（gp，該基材夾頭cK被垂直於該基材6 -19- 1358529 的表面移動）。 圖5 A顯示圖4的形狀測量設備的一部分的放大示圖。 入射到該基材6上的光的角度被假設爲0。舉例而言，在 看基材6上的測量點P時，從該測量點p處（其以p丨作爲初始 位置及P2作爲被驅動於Z方向之後的位置）被反射的光在該 •Z桌台被移動一段Z1距離時其亦被移位一段Zlsin0的距離 。在該拾像元件1 4的光接受表面上（其上的p 1 ’代表測量p ! 點在其初始位置時的影像點及P2’代表P2點在被驅動於Z方 向上之後的影像點），該被反射的光被偏移一段M· Zlsin 0的距離，其係藉由將上述的移位量乘上該成像光學系統 16的放大係數Μ而得到的。因此，在該拾像元件14上的測 量點影像的焦點（其係隨著該Ζ桌台的驅動而被移動）可藉 由使用入射角0與成像光學系統16的放大係數來決定。換 言之，藉由將一被選定的畫素連續地移位用以依據該Ζ桌 台被驅動一段Ζ1的距離來產生該白光干涉訊號，可永遠從 該基材6的表面上的同一測量點Ρ處獲得該白光干涉訊號。 圖7Β顯示在該拾像元件14的光接受表面上的影像。如圖 7Β所示，該參考光的一狹縫影像30r與該測離量光的一狹 縫影像30m彼此被大致完全地重疊在該拾像元件14上且該 測量點P的一影像P ’出現在該狹縫影像3 〇m中。而且’如 圖7B所示，當基材6被移動於Z方向上時，測量點P的影像 P’與狹縫影像30m—起被移動於方向泠上。在另一方面’ 該參考光的狹縫影像3〇r被保持不動。 圖7A爲一圖表其畫出用第三示範性實施例獲得之白 -20- 1358529 光干涉訊號。在第三示範性實施例中，畫在圖7A中的該 白光千涉訊號係藉由從被該測量點影像P’所覆蓋的多個畫 素（如圖7B所示）中與基材6在Z方向上的運動同步地連續地 擷取訊號來獲得的。詳言之，位在該0方向上相關於在Z 軸方向上的取樣節距ZP被移位一段M· Zlsin0距離的位置 上的每一像素的光強度被其連續地擷取。因此，不論造成 該測量光傾斜地照射作爲測量目標物的基材6的表面的光 學配置爲何，該白光干涉訊號都可從基材6上的同一測量 點處被獲得。在第三示範性實施例中，該測量點在該拾像 元件14上對應於在Z軸方向上的該取樣節距的位移量可被 設定爲與該拾像元件14在召方向上的像素節距GP相匹配。 換言之，該像素節距GP，該成像光學系統16的放大係數Μ ，該入射角0，及在Ζ軸方向上的該取樣節距ΖΡ被加以選 定用以滿足Gp=| Μ| · Zpsin0的關係。用示範性的數値 來舉例，所使用的該拾像元件14具有的像素節距GP = 4微米 ，該入射角0爲80度，該成像光學系統16的放大係數Μ 爲-40，且在Ζ軸方向上的該取樣節距ΖΡ爲102奈米。如在 上文的第一示範性實施例所描述的，從產量的觀點來看， 以一固定的速度來驅動該Ζ桌台且與該拾像元件14擷取影 像的取樣同步地擷取Ζ軸測量干涉計所測得的數値是較佳 的。在此一例子中’假設該拾像元件14擷取該影像的取樣 週期爲10毫秒的話，則影像是在該Ζ桌台是以1〇2奈米/10 毫秒=10微米/秒的固定速度被驅動下被擷取的。又，每一 取樣’在每一被移位一段對應於一在^方向上的像素的距 -21 - 1358529 離的像素的亮度（光強度）被相關於該z軸測量干涉計測得 的數値儲存在該儲存單元內。因爲在獲得該白光干涉訊號 之後的一處理方法可類似於第一示性實施例中的處理方法 被實施，所以將不再於此處重復。 在第三示範性實施例中，該桌台掃描方向並不侷限於 從z軸傾斜Φ的方向上。此—變化例將參照圖5A及5 B加以 描述。圖5B顯示圖5A中之基材6的一部分的放大圖。在此 被假設的是，光被該基材6反射於一角度0的方向上（該角 度0等於光入射到該基材6上的入射角0 )且基材6藉由使 用Z桌台及Y桌台而被掃描於圖5B中以箭頭所表示的方向 上。看著基材6上的測量點P，當該Z桌台被驅動一副Z 1距 離時，從基材6上的同一測量點P反射之被反射的光從該初 始位置被移爲一段Z1 · sin(0 - Φ )/cos0的距離。因此， 在該拾像元件14的光接受表面上，該被反射的光被移位一 段Μ· Z1 · sin(0 - φ )/C0S(i)的距離，其是藉由將上面的距 離乘上該成像光學系統1 6的放大係數Μ所得到的。因此， 在該拾像元件1 4上的測量點影像的焦點（其係隨著該Ζ桌台 及Υ桌台的驅動而被移動）可藉由使用入射角0，成像光學 系統16的放大係數Μ及該掃描方向Φ來決定。換言之，藉 由將一被選定的畫素連續地移位用以依據該Ζ桌台被驅動 —段Ζ1的距離來產生該白光干涉訊號，可一直從該基材6 的表面上的同一測量點Ρ處獲得該白光干涉訊號。 第四示範性實施例 -22- 1358529 圖8爲一方塊圖其顯示包括了依據本發明的第四範性 實施例的形狀測量設備之曝光設備。依據本發明的第四範 性實施例的曝光設備包括一照明設備8 00-80 1，一標線板 桌台RS (—標線板（光罩）31被置於其上），—投影光學系統 32’ 一晶圓桌台WS(—晶圓（基材）6被置於其上，一焦點控 制感測器39，及一形狀測量設備200。一參考板39亦被設 置在該晶圓桌台WS上。該曝光設備更包含一用於該焦點 控制感測器33的處理單元400及一用於該形狀測量設備2〇〇 的處理單元4 1 0。 該形狀測量設備200可根據第一至第三示範性實施例 來建構。雖然該焦點控制感測器3 3與該形狀測量設備200 各自在晶圓6的形狀測量上具有功能，但它們具有下面特 定的特徵。該焦點控制感測器3 3爲一感測器其具有較快的 反應，但較易受到晶圓圖案的影響。該形狀測量設備2 0 0 爲一感測器其具有較慢的反應，但較不易受到晶圓圖案的 影響。 —控制單元1 1〇〇包括一CPU及一記憶體。該控制單元 1100被電連接至該照明設備800-801，該標線板桌台RS， 該晶圓桌台WS，該焦點控制感測器3 3，及該形狀測量設 備200，藉以控制該曝光設備的操作。在第四示範性實施 例中，該控制單元11 〇〇亦執行測得的數値之校正計算並在 該焦點控制桿測器3 3偵測到該晶圓6的表面位置時實施必 要的控制。標號1 000爲一晶圓桌台（WS)控制單元，其具有 依據來自該控制單元1100的指令控制該晶圓桌台WS的驅 -23 - 1358529 動輪廓（driving profile)的功能。 該照明設備800-801包括一光源單元800及一被安排來 照明該標線板31的照明光學系統801，一將被轉印的電路 圖案被形成在該標線板上。 該光源單兀800是由一雷射所構成。該雷射可以是一 波長約爲193奈米的ArF準分子雷射或波長約爲24 8奈米的 KrF準分子雷射。可被使用之光源種類並不侷限於準分子 雷射。其它的例子爲，一波長爲157奈米的F2雷射及婆長 不大於20奈米的EUV(極紫外光）光線亦可被使用。 該照明光學系統801爲一被安排來藉由使用從該光源 單元800發射出的一光束來照明一目標物表面的光學系統 。在第四示範性實施例中，該光束被具有一對曝光而言爲 最佳之預定的形狀之曝光狹縫所塑形且被照射到該標線板 31上》 該標線板31上形成有將被轉移的電路圖案，其該標線 板被支撐在該標線板桌台RS上且被該標線板桌台驅動》 來自該標線板31的被衍射的光通過該投影光學系統32且被 投射到該晶圓6上。該標線板3 1與該晶圓6被安排成一光學 共軛關係。在標線板31上的電路圖案藉由在一對應於一縮 小係數比的速率比之下掃描該標線板3 1與該晶圓6而被轉 移至該晶圓6上。此外，雖然沒有被示出但該曝光設備還 包括一標線板偵測單元其具有一光線傾斜入射系統。該標 線板偵測單元偵測到一標線板位置，使得該標線板3 1被放 置在一預定的位置處。 -24- 1358529 該標線板桌台RS透過一標線板夾頭（未示珠）支撐該標 線板31且連接至一驅動機構（未示出）。該驅動機構是由線 性馬達等所構成且能夠將該標線板桌台RS驅動於X軸方向 ，Y軸方向，Z軸方向上，且繞著每一軸轉動，藉以將該 標線板31移動至所想要的位置。 該投影光學系統32具有將來自一木標物表面的光束聚 焦於一影像平面上的功能。在第四示範性實施例中，該投 φ 影光學系統32將形成在該標線板31上的電路圖案成像在該 晶圓6上。該投影光學系統3 2是由一折射系統，一反射折 射式光學系統，或一反射式系統所構成的。 一作爲光敏劑的光阻被塗在該晶圓6上。在第四示範 性實施例中，該晶圓6爲一將被該焦點控制感測器3 3與該 形狀測量餓備200測量的目標物。雖然在此示範性實施例 中該晶圓6被用作爲該基材，但一玻璃板亦可被用來取代 它。 鲁 該晶圓桌台WS透過一晶圓夾頭（未不出）來支擦該晶圓 6 »與該標線板桌台RS類似地，該晶圓桌台WS可藉由使用 線性馬達將該晶圓6移動於X軸方向，Y軸方向，Z軸方向 ，且繞著每一軸轉動。該標線板桌台RS的位置與該晶圓 ' 桌台WS的位置是由一6軸雷射干涉計81來監視，使得這兩 個桌台都是已一固定速率比來加以驅動。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shape measuring apparatus constructed to measure a surface shape (outer shape or contour) of a measuring target, a shape measuring method constructed to measure a The surface shape of the target is measured, and an exposure apparatus including the shape measuring device. [Prior Art] As a background art of a shape measuring apparatus and an exposure apparatus including the shape measuring apparatus, the following description is described by way of an example of a semiconductor exposure apparatus which requires severe surface measurement accuracy. When a semiconductor device or a liquid crystal display device is fabricated by lithography, a projection exposure device is used, wherein a circuit pattern drawn on a reticle is projected onto a wafer by a projection optical system for exposure. on. In the projection exposure apparatus, as the accumulation density of the semiconductor device is increased, the circuit pattern drawn on the reticle is required to be projected with higher resolution to facilitate exposure onto the wafer. The smallest scale (or finest resolution) that can be transferred by the projection exposure apparatus is proportional to the wavelength of the light used for exposure and inversely proportional to the number aperture (NA) of the projection optics. Therefore, the shorter the wavelength of the exposed light, the higher the resolution. For this reason, recently, the industry has used light sources with shorter wavelengths, such as KrF excimer lasers (whose waves are about 248 nm) and ArF excimer lasers (which have a wavelength of about 193 nm). Moreover, the use of infusion exposure techniques has been proposed. In addition, -4- 1358529 requires a further expansion of the exposed area. In order to meet these needs, a scanner has been used primarily to replace the step-and-repeat exposure device (also known as a "stepper"), where - the next roughly rectangular exposure area is miniature ( The reduction method is exposed to a wafer. The scanner is a step-and-scan exposure apparatus in which an exposure area is formed as a rectangular slit and a reticle and a wafer are relatively scanned at a high speed, thereby achieving high precision at high speed. Implement exposure in large areas. In the scanner, a surface position of the wafer at the predetermined position is used by a surface position measuring unit (focusing control sensor) before a predetermined position of the wafer reaches the exposure slit region. A ray oblique incidence system is measured. Based on the measured surface position of the wafer, a correction for aligning the wafer surface with an optimal imaging surface is performed when the predetermined position of the wafer is exposed. In detail, a plurality of measurement points are disposed in the exposure slit along the length direction of the exposure slit (ie, along a direction perpendicular to the scan direction) for not only measuring the height of the wafer surface position ( That is, "focal length") also measures the tilt (i.e., "inclination") of the wafer surface. As a method of measuring the focal length and the inclination, there is a method of using an optical sensor (see Japanese Patent Publication No. 6-260391 and U.S. Patent No. 6,249,351), and a method using a gas meter sensor ( See International Publication No. WO2005/0 22082 to Pamphlet, and a method of using a capacitive sensor. However, in recent years, because of the use of shorter wavelengths of exposure light and higher apertures of the projection optics, the depth of focus becomes extremely small - 5 - 1358529 ' makes it more difficult to align the exposed crystals Satisfactory accuracy is achieved with the rounded surface and the optimal imaging surface, which is referred to as focus accuracy. In other words, 'some factors become unnegligible. These factors include the influence of one pattern on the wafer and the measurement error of the surface position measuring device. These are the thickness of the photoresist layer coated on the wafer. The unevenness has an effect. For example, the unevenness of the thickness of the photoresist layer causes a height difference between the circuit pattern and the one-line line near the circumference, which is very serious for the focal length measurement, although it is smaller than the depth of focus. Therefore, an oblique angle of the photoresist surface is increased to a degree that causes the reflected light (which is detected by the surface position measuring device) to deviate from a mirror reflection angle due to reflection and/or refraction. . Moreover, the difference in roughness/fineness of the pattern on the wafer produces a difference in reflectivity between a fine pattern region and a rough pattern region. Therefore, because of the change in the angle of reflection detected by the surface position measuring device and the intensity of the reflected light, the waveform of the signal from which the reflected light is detected becomes asymmetrical and causes Measurement error. Fig. 18 is a schematic view showing an example in which the measuring light MM is irradiated onto a wafer SB which has reflectivity when used in the optical sensor disclosed in Japanese Patent Laid-Open No. 6-26039 1 A difference. In the example shown, the measurement light MM is inclined at an angle A with respect to a boundary line between two regions that differ in reflectivity, and the measurement is carried out in a direction labeled α' of. Figure 19 shows the intensity distribution of the reflected light in three sections, which are spaced apart from each other in a direction marked cold -6 - 1358529 ', ie section AA ', section BB ', and section CC '. As seen in Fig. 19, the reflected light has good symmetry on the sections AA' and CC', and the reflected light has an asymmetrical profile on the section BB', including the reflectivity Different areas. This asymmetrical profile moves the center of mass (barycenter) into the distribution of the reflected light and causes a measurement error. Therefore, the surface of the wafer cannot be measured with high precision and a large defocus is generated, thereby causing failure of a wafer. Fig. 15 shows a shape measuring apparatus disclosed in U.S. Patent No. 6,249,351, in which light is obliquely irradiated onto a substrate and the shape of the substrate is measured in accordance with the obtained interference signal. The disclosed shape measuring apparatus comprises a light source 101, a lens 103, a beam splitter 105, a reference mirror 130, a driving mechanism 397, a beamformer 170 formed by a grating, lenses 171 and 173, and a pickup image. Element 190. Broadband light (white light) from the light source 101 is introduced into the beam splitter 105 via the lens 103 and is divided into reference light and measurement light, which is reflected by the reference mirror 130 and the measurement light is crystallized as a sample Round 3 60 reflection. These reflected light are combined by a bundler 170 formed by a grating. The reference light and the measurement light interfere with each other, and the resulting interference light is guided to the pickup element 190 via the lenses 171 and 173. The disclosed shape measuring apparatus also has a problem that the surface shape is erroneously measured due to the influence of the circuit pattern on the crystal circle 360. This problem will be described with reference to Figs. 16, 17A and 17B. Figure 16 is a diagram showing the commonly used "white interference signal" obtained in the shape measuring apparatus of Figure 15 when the wafer 360 is moved by the driving mechanism 397 in a direction perpendicular to the surface of the wafer. "Strength of. A signal in Example 1 of Figure 16 represents that the structure on the measured wafer 360 is not patterned to form a photoresist layer on which only a photoresist layer is applied (e.g., as shown in Figure 17A). On the other hand, a signal in the example 2 of Fig. 16 represents a more common structure on the measured wafer 360. One of the patterns is formed on the wafer 360 and a photoresist layer is applied to the pattern. (as shown in Figure 17B). Referring to Figure 16, in the comparison of the signals of Example 1, the signal in Example 2 is affected by the pattern on wafer 360 such that the interfering signal is partially deformed. The deformation of the interference signal is due to the system of the particular shape measuring device of Fig. 15, wherein light is obliquely illuminated onto the surface of the wafer 360 and reflected from the surface of the wafer as shown in Fig. 17B. Light is received. More specifically, when the wafer 360 is scanned in a direction perpendicular to the surface of the wafer 360, the position on the wafer 360 that is illuminated by the measurement light is shifted and on the wafer 360. A measurement point is changed. Therefore, the intensity of the reflected light is changed by the influence of the circuit pattern on the wafer, so that a correct interference signal cannot be obtained. The rays of light in Figures 17A and 17B represent only light that passes through the surface of the photoresist and is reflected by the surface of the wafer. In the example 2 of Fig. 16, since the reflectivity is partially improved, the peak position of the white interference signal is changed and eventually an error is generated in the number obtained by measuring the contour of the wafer. Further, the method of using a gas meter sensor described in International Publication No. WO2005/022082 to Pamphlet has a problem in that fine particles mixed in the gas are sprayed toward the wafer. Another problem is that the -8 - 1358529 method cannot be used on exposure equipment that operates in a vacuum, such as an EUV (Extreme Ultraviolet) exposure apparatus, because the vacuum is destroyed by the gas. SUMMARY OF THE INVENTION The present invention relates to a measuring apparatus, a shape measuring method, and an exposure apparatus. According to one aspect of the present invention, a shape measuring method is provided which can reduce the influence of a reflective distribution on a surface of a measuring object. According to one aspect of the present invention, a measuring method for measuring a surface shape of a measuring target includes dividing light from a light source into measuring light and reference light 'the measuring light obliquely incident on a surface of the measuring target' The reference light is incident on a reference mirror, and the measurement light reflected by the measurement target and the reference light reflected by the reference mirror are guided to a photoelectric conversion element to use the photoelectric source while moving the measurement target Converting an element to detect interference light formed by the measurement light and the reference light, and measuring a surface shape of the measurement target according to an interference signal obtained by the measurement light, wherein the measurement light is at the measurement target The measured light that is reflected at the same location on the surface. According to another aspect of the invention, a shape measuring apparatus is provided which is constructed to measure the surface shape of a measuring target. The apparatus includes a light emitting optical system arranged to divide light from a light source into measuring light and reference light 'the measuring light obliquely incident on a surface of the measuring object'. The reference light is incident on a reference mirror; a light receiving optical system arranged to direct the measuring light reflected by the measuring object and the reference light reflected by the reference mirror -9-1358529 to a photoelectric conversion element; and a driving mechanism is constructed Move the measurement target. When the measurement target is moved, the photoelectric conversion element detects interference light formed by the measurement light and the reference light. The surface shape of the measurement target is a surface shape of the measurement target measured based on an interference signal obtained by the measurement light, the measurement light being measurement light reflected at the same position on the surface of the measurement target" Other features of the present invention will become apparent from the following description of the exemplary embodiments. [Embodiment] Various exemplary embodiments of the present invention will be described with reference to the drawings. It is noted that in the drawings, like elements are designated by the same reference numerals and the repeated description of the components will be omitted. First Exemplary Embodiment Fig. 1 is a schematic view showing a shape measuring apparatus 200 according to a first exemplary embodiment of the present invention. The shape measuring apparatus 200 measures the surface of the substrate 6 as a measurement target, i.e., the height information (Z position) of each measurement point on the χγ plane. Moreover, the shape measuring apparatus 200 measures the average height and average inclination information (ω χ ' wy) in a predetermined area on the XY plane. Further, when a plurality of films are formed on the substrate 6, the shape measuring device 200 measures the surface of an uppermost film, the interface between adjacent films, and any surface of the substrate 6 itself. The high level of information. -10- 1358529 The shape measuring apparatus 200 is constituted by a light emitting optical system, a table system, a light receiving optical system, and a data processing system. The light emitting optical system includes a light source 1, and a collecting lens 2 is arranged to collect light emitted from the light source, a pinhole 3 and a lens 4 through which the parallel light is irradiated onto the substrate 6, And a beam splitter 5a which is arranged to split the light. The light source 1 is an LED (including a so-called white LED) or a halogen bulb that emits broadband light having a wide wavelength width. The beam splitter 5a divides the broadband light from the light source 1 into a plurality of modulated beams. The table system is composed of a substrate chuck CK that holds the measurement target (substrate) 6 and a driving mechanism that precisely aligns (registers) the position of the measured object. . The drive mechanism includes a Z table 8, a Y table 9 and an X table 10. The light receiving optical system is composed of a beam splitter 5b, a pickup element (photoelectric conversion element) 14, such as a CCD or CMOS sensor, and an imaging optical system which is constituted by lenses 11 and 13 which are arranged to The surface of the substrate 6 is imaged on the image pickup element 14 and an aperture stop member 12. The beam splitter 5b combines the light reflected by the reference mirror 7 and the light reflected by the substrate 6 with each other. The data processing system is composed of a processing unit 50, a storage unit 51, and a display device 52 for displaying the measurement results and measurement conditions. The detailed function of the components in the first exemplary embodiment will be described below. In Fig. 1, light emitted from the light source 1 is condensed by the condensing lens 2 to the pinhole 3 and shaped into parallel light by the lens 4. The 1358529 beam, which is shaped into parallel light, strikes the substrate 6 at an angle of incidence of 0 degrees. Since the beam splitter 5a is disposed halfway through the path of the parallel light, a light beam having a total light amount of 1/2 is reflected by the beam splitter 5a and has an angle of incidence of 0 at the same angle as the incident angle of the substrate 6. It hits the reference mirror 7. The light emitted from the light source 1 preferably has a wavelength bandwidth of from 400 nm to about 800 nm. However, the wavelength bandwidth of the emitted light is not limited to this range and may be set to a range of not less than 100 nm. If a photoresist is applied to the substrate 6, light having an ultraviolet wavelength of not more than 3 50 nm is not required to be irradiated onto the substrate 6 in order to prevent the photoresist from being exposed. The polarization state of the light is set to a non-polarized or circularly polarized state. When the incident angle 0 of the light incident on the substrate is increased, the reflectivity at the front surface of a film on the substrate 6 is relatively improved compared to the reflectivity of the back surface of the film. . Therefore, when the shape of the front surface of the film is measured, the incident angle angle is preferably set as large as possible. On the other hand, if the incident angle 0 is close to 90 degrees, difficulty arises in assembling the optical system. Therefore, the angle of incidence 0 is preferably set in the range between 70 degrees and 85 degrees in the practical example. The beam splitter 5a can be formed as a cube beam splitter, wherein a metal film, A dielectric multilayer film, or the like, is used as a split film. Alternatively, the beam splitter 5a may be formed as a film beam splitter which is made of a film of carbonized sand or tantalum nitride and has a thickness of from 1 μm to 5 μm. Light that has passed through the splitting beam 5a is irradiated onto the substrate 6, and light reflected by the substrate 6 (hereinafter referred to as "measuring light,") enters the beam splitter 5b-12-1358529. On the one hand, the light reflected by the beam splitter 5 a is irradiated onto the reference mirror 7, and the light reflected by the reference mirror 7 (hereinafter referred to as "reference light") enters the beam splitter 5b. The reference mirror 7 It can be formed by an aluminum plane mirror having a surface accuracy of 10 nm to 20 nm, or a glass plane mirror having compatible surface accuracy. The measurement light reflected by the substrate 6 and the reflection light reflected by the reference mirror 7 The reference light is combined with each other by the beam splitter 5b and both are detected as interference light by the pickup element 14. The beam splitter 5b can be formed in the same manner as the beam splitter 5a. 11 and 13 and the aperture stop 12 are disposed halfway along the path of the combined light for performing the following functions. The lenses 1 1 and 13 form a telecentric imaging optical system 16. The substrate 6 and the The respective light-receiving elements of the image pickup element 14 are associated with the imaging light in a Scheimpflug relationship. The learning system 16 is provided. Therefore, the surface of the substrate 6 is imaged on the light receiving surface of the pickup element 14. The aperture stop 12 provided at the pupil position of the imaging optical system 16 is used to be specific The number of apertures (NA) of the imaging optical system 16 is specified such that the NA is set to a minimum of 値, which is in the range of sin (0. 5 °) to sin (5 °). On the light receiving surface of the image pickup element 14, the measurement light and the reference light are overlapped with each other to cause interference of the two kinds of light, thereby forming interference fringes. A method of forming an interference signal, which is an important point in the first exemplary embodiment, will now be described. In Fig. 1, a substrate 6 is held by the substrate chuck CK and placed on the Z table 8, the Y table 9 and the X table 10. The Z table 8 and the Y table 9 are driven to generate a white light interference signal at the pickup element 14, as shown in FIG. In this case, the Z table-13-1358529 table 8 and the Y table 9 are simultaneously driven such that the substrate 6 is moved in one direction, which is the direction in which the light reflected by the substrate 6 advances (g卩, The light is reflected in the same angle as the angle of incidence 0. In other words, the Z table 8 and the Y table 9 are driven such that the Z table that is driven by the Zs amount and the table Y that is driven by the Ys amount always satisfy Ys/Zs = tan0. The light intensity of each pixel of the image pickup element 14 corresponding to each of the reflection points on the substrate 6 is stored in the storage unit 51. When the area of the substrate 6 to be measured is changed, the above measurement moves the desired area on the substrate 6 and the pickup by driving the X table 10 and the Y table 9. The light receiving area of element 14 is aligned after it has been aligned. The X table 10, the Y table 9 and the Z table 8 can have three axes X-axis, Y-axis and Z-axis and two tilt axes ω X and ω in a one-to-one relationship y provides five measuring interferometers and performs high-precision control by performing closed loop control based on the outputs of the interferometers. Therefore, the accuracy of the shape measurement can be improved. In detail, when the entire shape of the substrate 6 to be measured is divided into a plurality of regions, a plurality of sets of shape data can be more accurately complemented to each other by using these interferometers. A method of obtaining the shape of the substrate 6 by signal processing of the white light interference signal measured by the image pickup element 14 and stored in the body will now be described. Fig. 6 shows a white light interference signal obtained at a central pixel of the pickup element 14. The white light interference signal is also referred to as an intergerogram. In Fig. 6, the horizontal axis represents the number measured by the Z-axis measuring interferometer after the Z table and the gamma table have been driven, and the vertical axis represents the output of the pickup element 14. In addition to the interferometer, a capacitive sensor -14-1358529 can be used as a measurement sensor. The measured height enthalpy is obtained by calculating the peak position of the white light interference signal and determining the measured number of z of the z-axis measurement interferometer corresponding to the peak position. The three-dimensional shape of the substrate can be measured by measuring the height of all the pixels of the pickup element 14. The signal peak position can be calculated by using an approximation of a curve (e.g., a quadratic equation curve) based on the signal peak position and other points in its vicinity. This approximation 値 allows the peak position to be calculated from the Z-axis (i.e., the horizontal axis of Fig. 6) sampling pitch Zp in the range of 1/10 to 1/50. In fact, the sampling pitch ZP can be achieved by driving the Z table step by step at a fixed pitch ZP (the Y table is also driven step by step at the same time). However, for volumetric speed, the Z table and the Y table are preferably driven at a fixed speed while maintaining the relationship YSP/ZSP = tan 0 (0 is the angle of incidence) where zSP is the drive of the z table Speed and YSP are the driving speed of the Y table. In the latter example, the timing at which the output (Z position) of the Z-axis measuring interferometer is read is synchronized with the timing at which the output of the pickup element 14 is read. The signal peak position can be measured by a suitable technique in the known art, such as the FDA method (see U.S. Patent No. 5,3 98,1 13). When using the FDA method, the peak position is determined by using the phase gradient of a Fourier spectrum. Therefore, a key point in determining the resolution and accuracy of the measurement method using the white light interference signal is how to accurately obtain a position where the path length difference between the measurement light and the reference light is 0 (zero). In order to achieve as high a precision as possible, in addition to the FDA method, various other methods are also proposed, such as a phase shift method or a Fourier transform method to determine the surrounding line of white light interference fringes and from the fringes. A method of obtaining a position where the path difference is directly zero in comparison with a maximum 値 position, and a phase cross-linking method 讯 the signal processing described above is performed by the processing unit 50 to obtain a representative of the substrate 6. Surface shape information. The obtained shape data is stored in the storage unit 51 and displayed on the display device 52. The advantages of the first exemplary embodiment will be described with reference to FIG. 2. Fig. 2 shows an enlarged view of a portion of the shape measuring apparatus of Fig. 1. In Fig. 2, three measuring points A 1, B 1 and C 1 are present on the surface of the substrate 6 to be measured by the Z-axis measuring interferometer, and corresponding to the three measuring points A of the measuring points, B and C are present on the pickup element 14. Moreover, Fig. 2 shows the positions of the respective measurement points A1, B1 and C1 on the substrate 6 when the Z table is driven to move from the position of the Z coordinate Z1 to the position of the Z coordinate Z2. By driving the z table and the Y table parallel to the direction of the light reflected by the substrate 6, between the measurement point on the substrate 6 and the image of the measurement point on the pickup element 14 Relationships will not be changed. This feature allows the measurement to be unaffected by the pattern distribution (i.e., reflective distribution) on the substrate 6 when the Z table is driven. Second Exemplary Embodiment Next, a shape measuring apparatus 200 according to a second exemplary embodiment of the present invention will be described in detail. . 3 is a schematic view showing a shape measuring apparatus 200 ° -16 - 1358529 according to another aspect (second exemplary embodiment) of the invention according to the invention. The shape measuring apparatus 200 according to the second exemplary embodiment of the present invention is composed of A light emitting optical system, a table system, a light receiving optical system, and a data processing system. The light emitting optical system further includes a light source 1 and a collecting lens 2. The light-emitting optical system further includes a slit plate 30, an imaging optical system 24 made of lenses 4 and 23, an aperture stop member 22, and a beam splitter 5a. The table system consists of a substrate chuck CK holding a substrate 6 as a measuring object, and a driving mechanism including a Z table 8, a table 9 and an X table 10. The data processing system is comprised of a processing unit 50, a storage unit 51 for storing data, and a display device 52 for displaying measurement results and measurement conditions. The detailed function of the components in the second exemplary embodiment will be described below. In Fig. 3, light emitted from the light source 1 is concentrated by the collecting lens 2 onto the slit plate 30. The slit plate 30 has a rectangular light-transmissive (slit) region with a slit having a width of 50 μm and a length of 700 μm in the direction of the X-axis, so that a rectangular image is picked up by the image. The element 14 is formed on the substrate 6 and the reference mirror 7. A primary light beam having passed through the imaging optical system 24 strikes the substrate 6 at an incident angle of a Θ angle. Since the beam splitter 5a is disposed halfway through the path of the parallel light, a light beam having 1/2 of the total number of rays is reflected by the beam splitter 5a and hits at the same angle of incidence angle as the incident angle of the substrate 6. Go to the reference mirror 7. Light that has passed through the splitting beam 5a is irradiated onto the substrate 6, and light reflected by the substrate 6 (hereinafter referred to as "measuring light") enters the beam splitter 5b. On the other hand, the light reflected by the beam splitter 5a is irradiated onto the reference mirror 7-17-1358529, and the light reflected by the reference mirror 7 (hereinafter referred to as "reference light") enters the beam splitter. 5b. Since the light source 1, the polarization state of the light, the incident angle 0, the beam splitter, the reference mirror, and the like are the same as those of the first exemplary embodiment, the detailed description of these members will be omitted. The measurement light reflected by the substrate 6 and the reference light reflected by the reference mirror 7 are bonded to each other by the beam splitter 5b and both are detected by the pickup element 14 as interference light. The beam splitter 5b can be formed in the same manner as the beam splitter 5a. The lenses 11 and 13 and the aperture stop 12 are disposed halfway along the path of the combined light for performing the following functions. The lenses 11 and 13 form a telecentric imaging optical system 16 such that the surface of the substrate 6 is imaged on the light receiving surface of the image pickup element 14. Therefore, in the second exemplary embodiment, the light-transmissive region (slit) of the slit plate 30 is imaged by the imaging optical system 24 on the substrate 6 and the reference mirror 7 as the slit image 30i, and It is further imaged by the imaging optical system 16 on the pickup element 14 and the aperture stop 12 disposed at the pupil position of the imaging optical system 16 is used to specifically specify the number of apertures of the imaging optical system 16 ( NA), so that the NA is set to a very small 値, its range is sin (0. 5 °) to sin (5 °). On the light receiving surface of the image pickup element 14, the measurement light and the reference light are overlapped with each other to cause the interference of the two kinds of light, thereby forming interference fringes. The method of obtaining an interference signal and a method of processing the interference signal can be carried out similarly to the method of the first exemplary embodiment described above, and thus the description of these methods will not be repeated here. -18- 1358529 According to the second exemplary embodiment 'because light is concentrated to the light-transmissive slit region of the slit plate 3', a higher density light intensity can be obtained and compared with the first exemplary embodiment 'Shape measurements can be implemented at higher S/N ratios. Although the second exemplary embodiment is limited in the area measurable by each light beam by the area of the permeable slit region and is narrower than the first exemplary embodiment, this is disadvantageous, but the second example The embodiment is effective when the measurement points on the substrate 6 each have a relatively small area and are arranged in a dispersed manner. When measuring the shape of a plurality of regions on the substrate 6, the X table and the Y table are driven to align the permeable slit region with a desired location on the substrate 6. Thereafter, the operation of obtaining and processing the interference signal can be implemented as in the first exemplary embodiment. Third Exemplary Embodiment Next, a shape measuring apparatus 200 according to a third exemplary embodiment of the present invention will be described in detail. 4 is a schematic view showing a shape measuring apparatus 200 according to another aspect (third exemplary embodiment) of the invention according to the stupid invention = structure and second example of the shape measuring apparatus 200 according to the third exemplary embodiment of the present invention The structures of the embodiments are the same, so the description thereof will not be repeated here. In the first and second exemplary embodiments, when the interfering signal is obtained, the Z table and the Y table are driven to move the substrate 6 in a direction in which light is reflected by the substrate 6. In parallel directions. On the other hand, in the third exemplary embodiment, only the Z stage is driven when the interference signal is obtained (gp, the substrate chuck cK is moved perpendicular to the surface of the substrate 6 -19- 1358529 ). FIG. 5A shows an enlarged view of a portion of the shape measuring apparatus of FIG. 4. The angle of light incident on the substrate 6 is assumed to be zero. For example, when looking at the measurement point P on the substrate 6, light reflected from the measurement point p (which has p丨 as the initial position and P2 as the position after being driven in the Z direction) is in the ?Z When the table is moved a Z1 distance, it is also shifted by a distance of Zlsin0. On the light receiving surface of the image pickup element 14 (p 1 ' on the image point where the p point is measured at its initial position and P2' represents the image point after the P2 point is driven in the Z direction) The reflected light is shifted by a distance of M·Zlsin 0 by multiplying the above-described shift amount by the amplification factor Μ of the imaging optical system 16. Therefore, the focus of the measurement point image on the image pickup element 14 (which is moved in accordance with the driving of the table) can be determined by using the incident angle 0 and the magnification factor of the imaging optical system 16. In other words, by continuously shifting a selected pixel to generate the white light interference signal according to the distance that the table is driven for a length of Ζ1, the same measurement point on the surface of the substrate 6 can always be used. The white light interference signal is obtained. Fig. 7A shows an image on the light receiving surface of the image pickup element 14. As shown in FIG. 7A, a slit image 30r of the reference light and a slit image 30m of the measured amount of light are substantially completely overlapped with each other on the image pickup element 14 and an image P' of the measurement point P Appears in the slit image 3 〇m. Further, as shown in Fig. 7B, when the substrate 6 is moved in the Z direction, the image P' of the measurement point P is moved in the direction 泠 together with the slit image 30m. On the other hand, the slit image 3〇r of the reference light is held still. Fig. 7A is a diagram showing a white -20-1358529 optical interference signal obtained by the third exemplary embodiment. In the third exemplary embodiment, the white light signal drawn in FIG. 7A is obtained from the plurality of pixels (as shown in FIG. 7B) covered by the measurement point image P' and the substrate 6. The motion in the Z direction is obtained by continuously capturing signals in synchronization. In detail, the light intensity of each pixel in the 0 direction at a position where the sampling pitch ZP in the Z-axis direction is shifted by a distance of M·Zlsin0 is continuously extracted. Therefore, regardless of the optical configuration of the surface of the substrate 6 which causes the measurement light to obliquely illuminate as the measurement target, the white light interference signal can be obtained from the same measurement point on the substrate 6. In the third exemplary embodiment, the displacement amount of the measurement point on the image pickup element 14 corresponding to the sampling pitch in the Z-axis direction may be set to be the pixel in the calling direction of the image pickup element 14. The pitch GP matches. In other words, the pixel pitch GP, the magnification factor Μ of the imaging optical system 16, the incident angle 0, and the sampling pitch Ζ in the x-axis direction are selected to satisfy the relationship of Gp=| Μ| · Zpsin0 . By way of an exemplary number, the image pickup element 14 used has a pixel pitch GP = 4 μm, the incident angle 0 is 80 degrees, and the magnification factor Μ of the imaging optical system 16 is -40, and The sampling pitch ΖΡ in the direction of the x-axis is 102 nm. As described in the above first exemplary embodiment, from the viewpoint of the yield, the table is driven at a fixed speed and captured in synchronization with the sampling of the image pickup element 14 to capture images. The number measured by the axis measuring interferometer is preferred. In this example, 'assuming that the sampling period of the image pickup element 14 is 10 milliseconds, the image is at a fixed speed of 1〇2 nm/10 milliseconds=10 micrometers/second at the table. Driven under the drive. Moreover, each sample 'the brightness (light intensity) of each pixel shifted from a distance of -21 - 1358529 corresponding to a pixel in the ^ direction is correlated with the number measured by the z-axis measuring interferometer. Stored in the storage unit. Since a processing method after obtaining the white light interference signal can be implemented similarly to the processing method in the first exemplary embodiment, it will not be repeated here. In the third exemplary embodiment, the table scanning direction is not limited to the direction of inclination Φ from the z-axis. This - a variation will be described with reference to Figs. 5A and 5B. Figure 5B shows an enlarged view of a portion of the substrate 6 of Figure 5A. It is assumed here that light is reflected by the substrate 6 in an angle of 0 (the angle 0 is equal to the incident angle 0 at which light is incident on the substrate 6) and the substrate 6 is used by using the Z table and The Y table is scanned in the direction indicated by the arrow in Fig. 5B. Looking at the measurement point P on the substrate 6, when the Z table is driven by a Z 1 distance, the reflected light reflected from the same measurement point P on the substrate 6 is moved from the initial position to a Z1. · The distance between sin(0 - Φ )/cos0. Therefore, on the light receiving surface of the image pickup element 14, the reflected light is shifted by a distance of Μ· Z1 · sin(0 - φ ) / C0S(i) by multiplying the distance above The magnification factor Μ of the imaging optical system 16 is obtained. Therefore, the focus of the measurement point image on the image pickup element 14 (which is moved as the table and the table are driven) can be obtained by using the incident angle 0, the magnification factor of the imaging optical system 16. Μ and the scanning direction Φ to determine. In other words, by continuously shifting a selected pixel to generate the white light interference signal according to the distance that the table is driven - the segment 1 can always be from the same measurement point on the surface of the substrate 6. The white light interference signal is obtained from the place. Fourth Exemplary Embodiment -22 - 1358529 Fig. 8 is a block diagram showing an exposure apparatus including a shape measuring apparatus according to a fourth exemplary embodiment of the present invention. An exposure apparatus according to a fourth exemplary embodiment of the present invention includes an illumination device 8 00-80 1, a reticle table RS (with a reticle (photomask) 31 placed thereon), projection optics System 32' A wafer table WS (a wafer (substrate) 6 is placed thereon, a focus control sensor 39, and a shape measuring device 200. A reference plate 39 is also disposed on the wafer table The exposure device further includes a processing unit 400 for the focus control sensor 33 and a processing unit 410 for the shape measuring device 2〇〇. The shape measuring device 200 can be based on the first The third exemplary embodiment is constructed. Although the focus control sensor 33 and the shape measuring device 200 each have a function in shape measurement of the wafer 6, they have the following specific features. The focus control sensor 3 3 is a sensor that has a faster response, but is more susceptible to wafer patterns. The shape measuring device 200 is a sensor that has a slower response but is less susceptible to wafer patterns. The impact of the control unit 1 1〇〇 includes a CPU and a memory The control unit 1100 is electrically connected to the lighting device 800-801, the marking table table RS, the wafer table WS, the focus control sensor 33, and the shape measuring device 200, thereby controlling the exposure Operation of the apparatus. In the fourth exemplary embodiment, the control unit 11 执行 also performs the measured correction calculation and when the focus control rod detector 3 detects the surface position of the wafer 6 The necessary control is implemented. Reference numeral 1 000 is a wafer table (WS) control unit having a function of controlling the driving profile of the wafer table WS in accordance with an instruction from the control unit 1100. The illumination device 800-801 includes a light source unit 800 and an illumination optical system 801 arranged to illuminate the reticle 31, a circuit pattern to be transferred being formed on the reticle. It is composed of a laser. The laser can be an ArF excimer laser with a wavelength of about 193 nm or a KrF excimer laser with a wavelength of about 24 nm. The type of light source that can be used is not limited. For excimer lasers. Other examples are An F2 laser having a wavelength of 157 nm and an EUV (extreme ultraviolet) light having a length of not more than 20 nm may also be used. The illumination optical system 801 is arranged to be emitted from the light source unit 800 by use. a light beam that illuminates an optical system of a target surface. In the fourth exemplary embodiment, the light beam is shaped by an exposure slit having a predetermined shape that is optimal for exposure and is illuminated The reticle 31 is formed with a circuit pattern to be transferred, and the reticle is supported on the reticle table RS and driven by the reticle table. The diffracted light of the reticle 31 passes through the projection optical system 32 and is projected onto the wafer 6. The reticle 31 and the wafer 6 are arranged in an optical conjugate relationship. The circuit pattern on the reticle 31 is transferred onto the wafer 6 by scanning the reticle 3 1 and the wafer 6 at a rate ratio corresponding to a reduced coefficient ratio. Further, although not shown, the exposure apparatus further includes a reticle detecting unit having a ray oblique incidence system. The reticle detecting unit detects a reticle position such that the reticle 31 is placed at a predetermined position. -24- 1358529 The reel table table RS supports the reticle 31 through a reticle chuck (not shown) and is coupled to a drive mechanism (not shown). The driving mechanism is constituted by a linear motor or the like and is capable of driving the marking plate table RS in the X-axis direction, the Y-axis direction, and the Z-axis direction, and rotates around each axis, thereby moving the marking plate 31 To the desired location. The projection optical system 32 has a function of focusing a light beam from the surface of a wooden object onto an image plane. In the fourth exemplary embodiment, the projection optical system 32 images a circuit pattern formed on the reticle 31 on the wafer 6. The projection optical system 32 is constituted by a refractive system, a reflective refractive optical system, or a reflective system. A photoresist as a photosensitizer is applied to the wafer 6. In the fourth exemplary embodiment, the wafer 6 is a target to be measured by the focus control sensor 33 and the shape measurement 200. Although the wafer 6 is used as the substrate in this exemplary embodiment, a glass plate can also be used in place of it. The wafer table WS is used to wipe the wafer through a wafer chuck (not shown). 6. Similar to the marking table table RS, the wafer table WS can be crystallized by using a linear motor. The circle 6 moves in the X-axis direction, the Y-axis direction, and the Z-axis direction, and rotates around each axis. The position of the reticle table RS and the position of the wafer WS are monitored by a 6-axis laser interferometer 81 so that both tables are driven at a fixed rate ratio.

接下來將討論一用來測量該晶圓6的表面位置（焦點） 的點。在第四示範性實施例中，該晶圓表面形狀是用該焦 點控制感測器33在掃描方向上（Y方向）掃描該晶圓桌台WS -25- 1358529 用以涵蓋晶圓6的整個寬度時加以測量的。又，在將該晶 圓桌台WS於一垂於該掃描方向的一方向上（即，X方向）步 進一 ΔΧ的距離之後，測量該晶圓表面位置的操作即在該 掃描方向上被重復實施一次。因此，勾畫該晶圓6的整個 表面的輪廓的操作即被實施。爲了提高產量的目的，晶圓 6在其不同點的表面位置亦可藉由在同一時間使用多個焦 點控制感測器3 3來加以測量。 該焦點控制感測器3 3使用一光學高度測量系統。換言 之，該焦點控制測器3 3使用一種引入光線的方法來以一大 的入射角的角度照射該晶圓並藉由使用一位置偵測元件， 譬如一 CCD感測器，來偵測被反射的光線的影像移位。詳 言之，光束打到該晶圓上多個將被測量的點上，各個被反 射的光束被引導至個別的感測器。一將被曝照的表面的傾 斜度係藉由在不同位置測得的高度資訊來加以計算出來。 焦點與傾斜度的偵測將於下文中詳細描述。首先將描 述該焦點控制感測器3 3的結構與操作。參照圖9，一偵測 系統包括一光源105，一聚光透鏡106，一圖案板107其具 有多個矩形透光狹縫以並排的方式形成於其上，透鏡108 及111，晶圓6’ 一晶圓桌台WS，鏡子109及110，及一光 偵測器，譬如CCD感測器。標號32爲一縮小投影透鏡其被 安排來將一標線板（未示出）投影至晶圓6上用以進行曝光 。從光源105發出的光線被聚光透鏡1〇6會聚並被照射到該 圖案板107。已通過該圖案板1〇7的狹縫的光線經由透鏡08 及鏡子109以一預定的角度被照射到晶圓6上。該圖案板 -26- 1358529 107與該晶圓6係以一成像關係相關於透鏡l〇8來加以安排 ，使得該圖案板107的每一狹縫的虛幻影像（aerial image) 被形成在該晶圓6上。來自晶圓6之被反射的光經由鏡子 110及透鏡111被該CCD感測器112接受。在晶圓6上的狹縫 影像經由透鏡111再次被聚焦在該CCD感測器112上。該 CCD感測器112產生一代表相當於該圖案板107的各個狹縫 10 7i的狹縫影像之訊號。晶圓6在Z方向上的位置係藉由偵 測該CCD感測器1 12產生的訊號的位置偏移來加以測量的 。當該晶圓表面從Z方向上的位置wl改變dz到位置w2時’ 一光軸在晶圓6上的偏移量ml可在入射角假設爲0 in之下 ，用下面的公式來表示： (1) m 1 = 2 · dz · tan 0 ,n 假設入射角度0 in爲84度，則可得到ml = 19xdz的結果 。這表示光軸的位移量被放大19乘上晶圓的位移量。在光 偵測器上的位移量係將公式（1)中的m 1乘上光學系統的放 大率（即，該透鏡111的影像放大率）。 —種使用上述本發明的第四示範性實施例的曝光設備 的方法將於下文中描述。圖11爲一流程圖其顯示使用在本 發明的第四示範性實施例的曝光設備中的曝光方法的整個 程序。首先，在步驟31中’晶圓6被放入到該曝光設備中 。然後，在步驟S 1 〇中決定是否要使用該焦點控制感測器 3 3來對該晶圓6實施焦點校準。此決定係根據有關於，例 -27 - 1358529 如”該目標晶圓是否是一批晶圓中的第一片，或該目標晶 圓是否爲多批晶圓中的第一批晶圓中的一片，或該目標晶 圓是否接受一要求嚴苛的焦點精準性的處理”的資訊而被 自動地作出。該資訊已事先由使用者登錄到該曝光設備中 。如果在步驟S10中決定的是不需要焦點校準的話，則該 處理前進至步驟S1 000，一平常的曝光程序在該步驟中被 實施於該晶圓上。在另一方面，如果在步驟S10中決定的 是需要焦點校準的話，則該處理前進至步驟S100，一焦點 校準程序在該步驟中被實施。 在步驟S100中，圖12所示的流程圖被執行。首先，該 晶圓桌台WS被驅動使得該參考板39被精準地放置在該焦 點控制感測器33底下。該參考扳39是用一具有絕佳的表面 精確性之玻璃板（其被稱爲光學上平的板子）製成。該參考 板39的表面具有一區域其具有均一的反射性（即，沒有反 射性的差異分佈），用以防止在使用該焦點控制感測器3 3 測量時產生誤差。該測量係使用該具有反射性均一性的區 域來實施。該參考板39亦可被形成爲一板子的一部分，該 板子上包括在該曝光設備中有需要用到之各式用在（例如 有關於對準偵測及投影光學系統的評估）其它校準之校準 記號。 現參照圖12，在步驟S101中，該參考板39之在Z方向 上的位置被該焦點控制感測器3 3偵測。在步驟S 1 0 2中，一 被測得的數値Ο m被儲存在該曝光設備中。然後，在步驟 sl〇3中’該晶圓桌台WS被驅動使得該參考板39被精準地 -28- 1358529 放置在該形狀測量設備200底下。之後，一位在與被該焦 點控制感測器33測量的同一測量區域（在XY平面內）內的參 考板形狀被該形狀測量設備200所測量》在步驟S104中， 被測得之形狀資料？《„被儲存在該曝光設備中。在步驟S 105 中，一第一偏移量（偏移量1)被計算出來。 更明確地，如圖1 4所示，該偏移量1係該形狀測量設 備200所測得之數値0„與該焦點控制感測器33所測得之數 値Pm之間的差値。該偏移量1在理想情況下應該是0因爲偏 移量1代表測量該參考板3 9的光學均一表面且該焦點控制 感測器3 3沒有造成測量誤差的結果。然而，該晶圓桌台 WS在掃描方向上之與系統相關的偏移，產生在該焦點控 制感測器3 3或該形狀測量設備200內之長期的游移（drift) 都會造成誤差因子。因此，較佳地該偏移量1應被週期性 地測量。當這些誤差因子沒有被顯著地產生或可被控制時 ，該偏移量1只需要被測量一次。藉此，使用該參考板39 的焦點校準程序S100即被完成。 在步驟S100之後’一用於晶圓6的焦點校準程序S200 被實施。在圖12的步驟S201中，該晶圓桌台WS被驅動用 以精確地將該晶圓6上一測量點WP放置在被該焦點控制感 測器33測量的位置處。在晶圓6上的該測量點wP(在該晶圓 平面內）被設定成與使用在將於下文中描述的曝光程序中 的測量點相符合。在步驟S 2 0 1中，在該晶圓6上的該測量 點W p的Z軸上位置被該焦點控制感測器3 3偵測。在步驟 S202中，一被測得的數値〇〜被儲存在該曝光設備中。然 -29- 1358529 後，在步驟S203中，該晶圓桌台WS被驅動使得該晶圓6被 精準地放置在該形狀測量設備2 00底下。之後，在該晶圓6 上的該測量點WP的晶圓形狀被該形狀測量設備200所測量 。在步驟S1 04中，被測得之形狀資料Pw被儲存在該曝光 設備中。在該晶圓6上的該測量點WP可從各種模式中被選 取，包括將設定一個點在該晶圓內的模式，設定一個點於 一次照射中，設定所有點於一次照射中，設定所有點於多 次照射中，及設定所有點於該晶圓內等模式。 在步驟S205中，第二偏移量（偏移量2)被計算出來。 詳言之，如圖1 4所示，偏移量2爲在該晶圓6上的每一測量 點WP之介該形狀測量設備200所測得之數値Pw與該焦點控 制感測器33所測得之數値〇w之間的羞値。 在步驟206中，計算出在該晶圓6上的每一測量點WP 之該偏移量1與偏移量2之間的差値，且所得之資料被儲存 在該曝光設備中。在該晶圓6上的每一測量點WP的偏移量 〇p可從下面的公式計算出來：Next, a point for measuring the surface position (focus) of the wafer 6 will be discussed. In the fourth exemplary embodiment, the wafer surface shape is to scan the wafer table WS-255-1858529 in the scanning direction (Y direction) by the focus control sensor 33 to cover the entire width of the wafer 6. When measured. Moreover, after the wafer table WS is stepped by a distance of ΔΧ in a direction perpendicular to the scanning direction (ie, the X direction), the operation of measuring the surface position of the wafer is repeatedly performed in the scanning direction. once. Therefore, the operation of delineating the outline of the entire surface of the wafer 6 is carried out. For the purpose of increasing throughput, the surface position of the wafer 6 at its different points can also be measured by using a plurality of focus control sensors 33 at the same time. The focus control sensor 33 uses an optical height measurement system. In other words, the focus control unit 3 3 uses a method of introducing light to illuminate the wafer at a large angle of incidence and detects the reflected by using a position detecting element such as a CCD sensor. The image shift of the light. In detail, the beam strikes a plurality of points on the wafer to be measured, and each reflected beam is directed to an individual sensor. The inclination of the surface to be exposed is calculated from the height information measured at different locations. The detection of focus and tilt will be described in detail below. The structure and operation of the focus control sensor 33 will first be described. Referring to FIG. 9, a detection system includes a light source 105, a concentrating lens 106, and a pattern plate 107 having a plurality of rectangular light-transmissive slits formed thereon in a side-by-side manner, lenses 108 and 111, and a wafer 6' A wafer table WS, mirrors 109 and 110, and a light detector such as a CCD sensor. Reference numeral 32 is a reduced projection lens which is arranged to project a reticle (not shown) onto the wafer 6 for exposure. The light emitted from the light source 105 is concentrated by the collecting lens 1〇6 and irradiated to the pattern plate 107. The light having passed through the slit of the pattern plate 1〇7 is irradiated onto the wafer 6 through the lens 08 and the mirror 109 at a predetermined angle. The pattern plate -26- 1358529 107 and the wafer 6 are arranged in an imaging relationship with respect to the lens 108 such that an aerial image of each slit of the pattern plate 107 is formed in the crystal Round 6 on. The reflected light from the wafer 6 is received by the CCD sensor 112 via the mirror 110 and the lens 111. The slit image on the wafer 6 is again focused on the CCD sensor 112 via the lens 111. The CCD sensor 112 produces a signal representative of the slit image corresponding to each of the slits 10 7i of the pattern plate 107. The position of the wafer 6 in the Z direction is measured by detecting the positional shift of the signal generated by the CCD sensor 112. When the wafer surface changes dz from the position w1 in the Z direction to the position w2, the offset ml of an optical axis on the wafer 6 can be assumed to be below 0 in the incident angle, and is expressed by the following formula: (1) m 1 = 2 · dz · tan 0 , n Assuming that the incident angle 0 in is 84 degrees, the result of ml = 19xdz can be obtained. This means that the amount of displacement of the optical axis is amplified by 19 times the amount of displacement of the wafer. The amount of displacement on the photodetector multiplies m 1 in equation (1) by the magnification of the optical system (i.e., the image magnification of the lens 111). A method of using the exposure apparatus of the fourth exemplary embodiment of the present invention described above will be described below. Figure 11 is a flow chart showing the entire procedure of the exposure method used in the exposure apparatus of the fourth exemplary embodiment of the present invention. First, in step 31, the wafer 6 is placed in the exposure apparatus. Then, it is determined in step S1 是否 whether or not the focus control sensor 3 is to be used to perform focus calibration on the wafer 6. This decision is based on, for example, -27 - 1358529 such as "whether the target wafer is the first wafer in a batch of wafers, or whether the target wafer is in the first batch of wafers in a plurality of wafers The piece of information, or whether the target wafer is subjected to a demanding process of precise focus accuracy, is automatically made. This information has been previously logged in to the exposure device by the user. If it is determined in step S10 that focus calibration is not required, the process proceeds to step S1 000, and a normal exposure process is performed on the wafer in this step. On the other hand, if it is determined in step S10 that focus calibration is required, the process proceeds to step S100, in which a focus calibration procedure is carried out. In step S100, the flowchart shown in Fig. 12 is executed. First, the wafer table WS is driven such that the reference plate 39 is accurately placed under the focus control sensor 33. The reference plate 39 is made of a glass plate (which is called an optically flat plate) having excellent surface accuracy. The surface of the reference plate 39 has a region which has uniform reflectivity (i.e., a difference distribution without reflection) to prevent an error in the measurement using the focus control sensor 33. This measurement is carried out using this region of reflective uniformity. The reference plate 39 can also be formed as part of a board that includes various types of applications that are needed in the exposure apparatus (eg, for evaluation of alignment detection and projection optics), other calibrations. Calibration mark. Referring now to Figure 12, in step S101, the position of the reference plate 39 in the Z direction is detected by the focus control sensor 33. In step S102, a measured number 値Οm is stored in the exposure apparatus. Then, in the step sl3, the wafer table WS is driven such that the reference plate 39 is accurately placed under the shape measuring apparatus 200 by -28-1358529. Thereafter, a reference plate shape in the same measurement area (in the XY plane) as measured by the focus control sensor 33 is measured by the shape measuring apparatus 200. In step S104, the shape data is measured. ? "" is stored in the exposure apparatus. In step S105, a first offset (offset 1) is calculated. More specifically, as shown in Fig. 14, the offset 1 is the The difference between the number measured by the shape measuring device 200 and the number 値Pm measured by the focus control sensor 33. The offset 1 should ideally be 0 because the offset amount 1 represents the result of measuring the optically uniform surface of the reference plate 39 and the focus control sensor 3 3 does not cause measurement errors. However, the system-dependent offset of the wafer table WS in the scanning direction, resulting in long-term drift in the focus control sensor 33 or the shape measuring device 200, can cause an error factor. Therefore, preferably the offset 1 should be measured periodically. When these error factors are not significantly generated or can be controlled, the offset 1 only needs to be measured once. Thereby, the focus calibration program S100 using the reference plate 39 is completed. After step S100, a focus calibration procedure S200 for the wafer 6 is implemented. In step S201 of Fig. 12, the wafer table WS is driven to accurately place a measurement point WP on the wafer 6 at a position measured by the focus control sensor 33. The measurement point wP (in the wafer plane) on the wafer 6 is set to coincide with the measurement point used in the exposure procedure which will be described later. In step S201, the position on the Z-axis of the measurement point Wp on the wafer 6 is detected by the focus control sensor 33. In step S202, a measured number ~ is stored in the exposure device. After -29- 1358529, in step S203, the wafer table WS is driven such that the wafer 6 is accurately placed under the shape measuring device 200. Thereafter, the wafer shape of the measurement point WP on the wafer 6 is measured by the shape measuring device 200. In step S1 04, the measured shape data Pw is stored in the exposure apparatus. The measurement point WP on the wafer 6 can be selected from various modes, including setting a mode in the wafer, setting a point in one illumination, setting all points in one illumination, setting all Point to multiple shots, and set all points in the wafer and other modes. In step S205, the second offset (offset 2) is calculated. In detail, as shown in FIG. 14, the offset 2 is the number 値Pw measured by the shape measuring device 200 at each measurement point WP on the wafer 6 and the focus control sensor 33. The shame between the measured number 値〇w. In step 206, the difference 该 between the offset 1 and the offset 2 of each measurement point WP on the wafer 6 is calculated, and the resulting data is stored in the exposure apparatus. The offset 〇p of each measurement point WP on the wafer 6 can be calculated from the following formula:

Op(i) = [〇w(i)-Pw(i)]-(〇m-Pm) (2) 其中i代表在該晶圓6上的該測量點的點數。 —平均高度偏移量（Z)及平均傾斜偏移量（ωζ，oy)亦 可一曝光照射爲單元（在步進器的例子中）或以一曝光狹縫 爲單元（在掃描器的例子中）被儲存作爲該偏移量Op。又， 因爲在晶圓上的電路圖案係每一照射（晶粒）被重復地形成 -30- 1358529 ，所以偏移量〇 P可當作用於該晶圓上的每一照射的平均値 被獲得並儲存。用於晶圓6的焦點校準程序S 200可藉此被 完成。 現將描述的是在該校準程序S100及S200之後被執行的 曝光程序S1000。圖13顯示該曝光程序S1000的細節。 參照圖13，晶圓對準是在步驟S1010中實施的。該晶 圓對準是透過使用一對準鏡（未示出）來偵測一光罩在該晶 圓上的位置並將該晶圓相關於該曝光設備放置在該XY平 面上等步驟來實施的。然後，在步驟S1011中，使用該焦 點控制感測器3 3來測量在該晶圓6上的一預定區域內之表 面位置。此一預定的區域包括在上述之晶圓6的校準程序 中使用到的測量點。因此，整體晶圓表面的形狀可藉由根 據該公式（2)的偏移量0P(i)校正測得的數値來加以測量。 已經用此方式校正過之晶圓表面形狀資料被儲存在該曝光 設備中。 在步驟S1012中，晶圓6被晶圓桌台WS從該焦點控制 感測器33底下的位置移動，使得該晶圓6上的第一曝光照 射被放置在該投影透鏡3 2底下的曝光位置。在此同時，該 曝光設備的處理單元根據該晶圓6的表面形狀資料來準備 用於第一次曝光照射（exposure shot)的表面形狀資料並藉 由將桌台驅動於Z方向上與傾斜方向上來實施校正，使得 該晶圓6的表面相關於一被曝照的影像的平面的偏.移量被 最小化。用該被曝照的影像來登錄該晶圓表面的操作因而 可用曝光狹縫爲單位來實施。 -31 - 1358529 在步驟S1013中，該曝光被執行且該晶圓桌台WS被掃 描於Y方向上。在第一次照射的曝光完成之後，在步驟 S1014中將決定是否還有未被曝光的照射。如過還有未被 曝光的照射的話，則該處理將回到步驟S 1 0 1 2。然後，用 於下一個曝光照射的表面形狀資料被準備且該曝光在該被 曝光的影像的平面以該曝光狹縫爲單位登錄該晶圓表面的 操作被實施的同時藉由將桌台驅動於Z方向及傾斜方向上 而被執行。在步驟S1014中再次決定是否還有未被曝光的 照射。如果”是”的話，則上述的操作將被重復直到沒有尙 未被曝光的照射爲止。如果對於所有照射的曝光都已完成 的話，該晶圓6在步驟S 1 0 1 5被恢復，且該處理亦結束。 因此，在第四示範性實施例中，在每一照射的曝光之 前，用於該曝光照射的表面形狀資料即被準備，偏離該被 曝照的影像的平面的偏移量被計算，且晶圓桌台將被驅動 的量亦被計算。在另一方法中，在第一照射的曝光之前可 對所有所有曝光照射準備該表面形狀資料，計算偏離該被 曝照的影像的平面的偏移量，及計算晶圓桌台將被驅動的 量。 該晶圓桌台WS並不侷限於一單一桌台且亦可被建構 成所謂的雙胞胎桌台其包括一用於曝光的曝光桌台及一用 於實施晶圓對準及晶圓表面形狀測量的測量桌台。在後者 的例子中，該焦點控制感測器33及該形狀測量設備200被 設置在靠近該測量桌台的一側上。 因爲複雜的電路圖案，刻線等等透過一半導體曝光設 -32- 1358529 備而出現在於將被測量及/或將被處理的該晶圓上，所以 反射性的分佈，局部的傾斜等等都很可能會發生。有鑑於 此一情況，此示範性實施例在降低導因於反射性分佈及局 部傾斜之測量誤差上具有一極有價値的優點。當晶圓表面 位置可被精確地測量時，在該最佳曝光平面與該晶圓表面 之間的焦點對準精確度就可被提升。因此，在改善作爲最 終產品之半導體元件的效能及提高升產良率上可獲至進一 步的好處。 第五示範性實施例 笨發明的第五示範性實施例將於下文中描述。圖20顯 示依據第五示範性實施例的曝光設備。 如圖20所示，依據第五示範性實施例的該曝光設備包 含一照明設備（光源單元）8 00，一照明光學系統801，一標 線板桌台RS，一投影光學系統32，一晶圓桌台WS，一參 考板39，一形狀測量設備200，及一用於該形狀測量設備 200之處理單元410。標線板桌台RS上支撐著一標線板， 且該晶圓桌台WS上支撐著一晶圓（基材）6。該參考板39被 放在該晶圓桌台WS上。 該形狀測量設備200可根據第一至第二示範性實施例 中的任一者來建構。前述的示範性實施例係以提供分離的 焦點控制感測器33及使用該形狀測量設備200作爲校準該 焦點控制感測器3 3的感測器爲例子來描述。相反地’該第 五示範性實施例的特徵在於省略該焦點控制感測器33及藉 -33- 1358529 由該形狀測量設備2 0 0來測量該晶圓6的表面位置。一控制 單元1 100包括一 CPU及一記億體。該控制單元1 100被電連 接至該照明設備8〇〇 ’該標線板桌台RS ’該晶圓桌台WS， 該焦點控制感測器33 ’及該形狀測量（焦點校準）設備200 ，藉以控制該曝光設備的操作。詳言之，標號1000標示的 是一晶圓桌台（WS)控制單元，其具有依據來自該控制單元 1 100的指令控制該晶圓桌台WS的驅動輪廓（driving profile)的功能。 一種使用該形狀測量設備200來測量該晶圓6的光阻表 面位置的方法將參照圖21來加以說明。圖21爲一圖表其顯 示一被設定來用晶圓桌台WS移動該晶圓6的驅動輪廓與該 形狀測量設備200的干涉訊號的接受（taking-in)之間的關 係。 在圖21中，水平軸代表Y桌台的位置及垂直軸代表Z 桌台的位置。Y桌台將晶圓6移動於Y方向上，即平行於該 表面測量設備200中該測量光的入射平面與反射平面（即， 晶圓6的表面）的方向。Z桌台將晶圓6移動於Z方向上，即 垂直於該晶圓6的表面的方向。”入射平面” 一詞係指垂直 於反射平面且包括該入射光與被反射光的平面。 該Y桌台以一固定的速度被驅動及該Z桌台被週期性 地驅動於一預定的範圍內。如圖21所示，該Z桌台的驅動 輪廓被設定爲包括一範圍，該Z桌台在該範圍內是以一固 定速度被驅動。假設該晶圓6在該形狀測量設備200內的入 射角度爲0，則Y桌台速度Vy與Z桌台速度Vz之間的關係 -34- 1358529 被設定爲可提供Vy/Vz = tan 0的相對速度比。又，該形狀 測量設備200在該桌台以該固定速度被驅動的時候偵測一 白光干涉訊號。換言之，根據來自該桌台控制單元1000的 驅動輪廓資訊，該控制單元1100該處理單元410接受該干 涉訊號的時機設定成與該晶圓6的驅動方向與該晶圓6的驅 動方向與從該晶圓6被反射的光的方向相一致的時機一致 。該驅動輪廓資訊被一雷射干涉計81精準地管理，且晶圓 6在接受該干涉訊號時候的位置資訊亦可根據該雷射干涉 計8 1所獲得的資訊被精確地管理。應注意的是，圖20爲了 簡化的目的只顯示作爲Y軸測量干涉計的該雷射干涉計8 1 ，但用於總共六個軸（除了 Y軸之外還有X軸，Z軸，ω X， o;y，ωζ)的雷射干涉計實際上都有被提供。 在該Υ桌台及Ζ桌台以Vy/Vz = tan 0的相對速度比被掃 描的範圍內，如圖2 2所示，該晶圓掃描方向與光線入射到 該形狀測量設備200內的晶圓20上所產生之該被反射的光 的方向一致。因此，該白光干涉訊號可如上文所述地藉由 使用從晶圓6上的同一點被反射的光來獲得，且晶圓表面 位置可被精確地測量，而不會受到晶圓6上存在的電路圖 案所造成的反射性的分佈的影響。 回到圖2 1，現將描述在Y方向的測量節距其可用該形 狀測量設備2 0 0來加以測量。 因爲該Y桌台係以固定速度被驅動於Y方向上且該Z桌 台係被週期性地驅動於Z方向上，所以Y桌台速度Vy與Z桌 台速度Vz之間的關係滿足每周期Vy/VZ = tan0。該晶圓6在 -35- 1358529 一段相當於一週期的時間內被移動於Y方向上的距離 定爲在γ方向上的測量節距。 —實際的數値實例將於下文中被提出。假設在該 測量設備200中入射到晶圓6上的入射角爲75度且Ζ桌 固定速度爲Vz=10mm/sec，則Υ桌台的速度則爲 Vy=10xtan(75°) = 37.5mm/sec。假設該Z桌台的驅動週 5 0秒，則在Y方向上的測量節距可被計算出： 37.5mm/secx50 sec=19mm〇 在這些條件下的千涉訊號將於下文中描述。假設 圓的高度位置爲Zw及入射角爲β ，光徑長度的改變 2Zwxcos0來表示。因此，關於該ζ軸之白光干涉訊號 本週期Ζρ可被近似爲Ζρ= λ c(2c〇S 0 )，其中λ c爲使用 形狀測量設備200內的寬頻光源的中心波長。例如，] = 600奈米的例子中，可計算出來Zp= 1.1 6微米。而且 設該干涉訊號的接受（taking-in)爲1毫秒的話，則該 訊號可從Z方向的10微米運動範圍被獲得。因爲該干 號的基本週期Zp爲1.1 6微米，所以有八個干涉條紋被 到。又，藉由使用一光二極體或具有高反應速度的光 體陣列來作爲該形狀測量設備200中的光電轉換元件 干涉訊號的強度可用約〇.〇1毫秒的取樣時間來加以測 此一取樣時間可被轉換成爲在Z方向上之0.01m 10mm/sec=100nm的距離。換言之，該白光干涉訊號 由接受八個干涉訊號而被充分地認定’且在2方向上 樣節距可被設定爲100奈米。因此，藉由執行上面的 被界 形狀 台的 期爲 該晶 可用 的基 在該 E A c ，假 干涉 涉訊 偵測 二極 ，該 量β sec χ 可藉 的取 示範 -36- 1358529 性實施例的訊號處理，該干涉訊號的一波峰位置可在z方 向上的取樣節距100奈米的約1/50的解析度下，即，約2奈 米，被測量。因爲波峰位置可以2奈米的解析度加以偵測 ，所以形狀測量亦可用2奈米的解析度來達成。 晶圓6在高度方向上的一測量點及一種將晶圓桌台WS 驅動於XY方向上的方法將於下文中參照圖24加以描述。 圖24顯示在形狀測量設備200，形狀測量設備200的測量點 ，及晶圓桌台WS在XY方向上的驅動模式之間的關係。在 圖24的例子中，測量是從晶圓6上的點A開始且在連續地 經過點B，C，D及E之後現已在點F處實施。根據上文所述 的數値例子，在圖24中之Y方向上的測量節距爲l.9mra。 詳言之，在使用該形狀測量設備200測量點A的測量之後 ，該Y桌台以該固定的速度Vy被移動於Y +方向上用以實施 後續的點的測量直到到達接近晶圓6的下緣處的點B爲止。 在通過該晶圓邊緣之後，如圖24所示的，該X桌台被驅動 用以在X方向上步進，同時該Y桌台被減速，然後向Y-方 向加速。該加速在該接近晶圓6邊緣的測量點C到達該形狀 測量設備200的測量位置之前即被停止。之後，該γ桌台 再次以該固定的速度Vy被移動於Y-方向上。當對接近晶 圓6的上緣之點C至點D等後續測量點的測量都完成時，X 桌台再次被驅動用以步進於X方向上且該Y桌台被加以控 制使得該Y桌台可以該固定的速度Vy被移動於Y +方向上直 到到達下一個測量點E爲止。在該Y桌台以該固定的速度 Vy被移動於Y +或Y-方向上的期間，該Z桌台亦需要以固定 -37- 1358529 的速度Vz被驅動於Z +或Z-方向上用以滿足Vy/Vz = tan 0。 藉由對整個晶圓表面重復上述的操作，有關於晶圓6 的整個表面的高度資訊即可在X及Y方向的預定節距下被 獲得。 在如上所述地獲得晶圓6的高度資訊之後，曝光程序 即被實施’同時根據測得之晶圓形狀精準地放置該晶圓使 得晶圓6的高度位置與圖20中之投影透鏡32的最佳成像平 面相一致。實際上，對於可在一次中被曝照的面積（在一 步進器中約22平方公釐，且在一掃描器中約8公釐χ25公釐 的曝光狹縫寬度）而言，一近似平面可使用最小平方方法 根據該形狀測量設備200測得之高度資訊計算出來。之後 ，該曝光在將該晶圓精確地放置在該z方向及傾斜方向（ω X，oy)上時被實施，使得該被算出來的近似平面與該投 影透鏡3 2的最佳成像平面相一致。 雖然在曝光期間的桌台掃描速度並不一定要與晶圓6 的形狀測量期間的掃描速度一致，但桌台掃描速度較佳地 被設定在一個實際上可被允許的範圍內之儘可能高的數値 〇 藉由如上文所述之第五示範性實施例的形狀測量設備 ，晶圓6的形狀測量可自晶圓6掃描於Y方向及Z方向上時 被實施。因此，第五示範性實施例在達成一更高的產量方 面比在將每一測量點放置在XYZ方向上之後在Y及Z方向市 掃描該晶圓的方法要有利許多。 -38- 1358529 第六示範性實施例 本發明的第六示範性實施例將於下文中描述。該第六 示範性實施例爲第五示範性實施例的改良且其特徵在於該 ' 形狀測量設備是由構成該第五示範性實施例的形狀測量設 備一干涉計2〇〇A(圖22)與一干涉計200B(圖23)所構成的， •該干涉計200B係藉由將該形狀測量設備轉向使得測量光的 入射方向被逆轉來構成的。換言之，如圖26所示，干涉計 φ 200A及200B被並排地設置在X方向上，使得它們在定向 (orientation)上係交替地相反。依據第—示範性實施例與 第二示範性實施例的結構可被用作爲干涉計200 A及200B 的結構。 一種使用依據第六示範性實施例的形狀測量設備將參 照圖25來描述。圖25爲一圖表其顯示以晶圓桌台來移動該 晶圓6的驅動輪廓與干涉計200A及200B接受干涉條紋的時 機之間的關係。Op(i) = [〇w(i) - Pw(i)] - (〇m - Pm) (2) where i represents the number of points of the measurement point on the wafer 6. - the average height offset (Z) and the average tilt offset (ω ζ, oy) can also be an exposure illumination unit (in the example of a stepper) or an exposure slit unit (in the scanner example) Medium) is stored as the offset Op. Moreover, since the circuit pattern on the wafer is repeatedly formed -30-1358529 for each illumination (grain), the offset 〇P can be obtained as the average 値 for each illumination on the wafer. And save. The focus calibration procedure S 200 for the wafer 6 can be completed thereby. What will now be described is the exposure program S1000 that is executed after the calibration procedures S100 and S200. Figure 13 shows the details of the exposure program S1000. Referring to Figure 13, wafer alignment is performed in step S1010. The wafer alignment is performed by using an alignment mirror (not shown) to detect the position of a mask on the wafer and to place the wafer on the XY plane in relation to the exposure apparatus. of. Then, in step S1011, the focus control sensor 33 is used to measure the surface position in a predetermined area on the wafer 6. This predetermined area includes the measurement points used in the calibration procedure of the wafer 6 described above. Therefore, the shape of the entire wafer surface can be measured by correcting the measured number 値 according to the offset 0P(i) of the formula (2). Wafer surface shape data that has been corrected in this manner is stored in the exposure apparatus. In step S1012, the wafer 6 is moved by the wafer table WS from a position below the focus control sensor 33 such that the first exposure illumination on the wafer 6 is placed at an exposure position under the projection lens 32. At the same time, the processing unit of the exposure apparatus prepares the surface shape data for the first exposure exposure according to the surface shape data of the wafer 6 and drives the table in the Z direction and the oblique direction. The correction is performed upwards such that the surface of the wafer 6 is minimized in relation to the plane of the exposed image. The operation of registering the surface of the wafer with the exposed image can thus be performed in units of exposure slits. - 31 - 1358529 In step S1013, the exposure is performed and the wafer table WS is scanned in the Y direction. After the exposure of the first illumination is completed, it is determined in step S1014 whether or not there is still an unexposed illumination. If there is still an exposure that has not been exposed, the process will return to step S1 0 1 2 . Then, the surface shape data for the next exposure illumination is prepared and the exposure is performed on the plane of the exposed image in the unit of the exposure slit, and the operation is performed while the table is driven It is executed in the Z direction and the oblique direction. It is again determined in step S1014 whether or not there is still an unexposed illumination. If "yes", the above operation will be repeated until there is no illuminating that has not been exposed. If the exposure for all of the illuminations has been completed, the wafer 6 is restored in step S1 0 15 and the process is also ended. Therefore, in the fourth exemplary embodiment, the surface shape data for the exposure illumination is prepared before the exposure of each illumination, and the offset from the plane of the exposed image is calculated, and the wafer table is The amount that the station will be driven is also calculated. In another method, the surface shape data can be prepared for all exposures prior to the exposure of the first illumination, the offset from the plane of the exposed image is calculated, and the amount by which the wafer table is to be driven is calculated. The wafer table WS is not limited to a single table and can be constructed as a so-called twin table including an exposure table for exposure and a wafer alignment and wafer surface shape measurement. Measuring table. In the latter example, the focus control sensor 33 and the shape measuring device 200 are disposed on a side close to the measurement table. Because complex circuit patterns, scribe lines, etc. appear through a semiconductor exposure device -32-1358529 on the wafer to be measured and / or will be processed, so the distribution of reflectivity, local tilt, etc. It is very likely to happen. In view of this situation, this exemplary embodiment has the advantage of having a very valuable margin in reducing the measurement error due to the reflective distribution and local tilt. When the wafer surface position can be accurately measured, the focus alignment accuracy between the optimal exposure plane and the wafer surface can be improved. Therefore, there is a further advantage in improving the performance of the semiconductor component as the final product and improving the yield. Fifth Exemplary Embodiment A fifth exemplary embodiment of the stupid invention will be described below. Fig. 20 shows an exposure apparatus according to a fifth exemplary embodiment. As shown in FIG. 20, the exposure apparatus according to the fifth exemplary embodiment includes an illumination device (light source unit) 800, an illumination optical system 801, a reticle table RS, a projection optical system 32, and a crystal. A round table WS, a reference plate 39, a shape measuring device 200, and a processing unit 410 for the shape measuring device 200. A marking plate is supported on the marking table table RS, and a wafer (substrate) 6 is supported on the wafer table WS. The reference plate 39 is placed on the wafer table WS. The shape measuring apparatus 200 can be constructed according to any of the first to second exemplary embodiments. The foregoing exemplary embodiment is described by providing a separate focus control sensor 33 and using the shape measuring apparatus 200 as a sensor for calibrating the focus control sensor 33. Conversely, the fifth exemplary embodiment is characterized in that the focus control sensor 33 is omitted and the surface position of the wafer 6 is measured by the shape measuring device 2000. A control unit 1 100 includes a CPU and a counter. The control unit 1 100 is electrically connected to the lighting device 8'', the marking table table RS', the wafer table WS, the focus control sensor 33' and the shape measuring (focus calibration) device 200, by means of which Control the operation of the exposure device. In particular, reference numeral 1000 designates a wafer table (WS) control unit having the function of controlling the driving profile of the wafer table WS in accordance with instructions from the control unit 1 100. A method of measuring the position of the resistive surface of the wafer 6 using the shape measuring apparatus 200 will be described with reference to Fig. 21. Figure 21 is a diagram showing the relationship between the driving profile set to move the wafer 6 by the wafer table WS and the taking-in of the interference signal of the shape measuring device 200. In Fig. 21, the horizontal axis represents the position of the Y table and the vertical axis represents the position of the Z table. The Y table moves the wafer 6 in the Y direction, i.e., parallel to the direction of the incident plane of the measuring light and the reflecting plane (i.e., the surface of the wafer 6) in the surface measuring device 200. The Z table moves the wafer 6 in the Z direction, i.e., perpendicular to the surface of the wafer 6. The term "incident plane" refers to a plane that is perpendicular to the plane of reflection and that includes the incident light and the reflected light. The Y table is driven at a fixed speed and the Z table is periodically driven within a predetermined range. As shown in Fig. 21, the driving profile of the Z table is set to include a range in which the Z table is driven at a fixed speed. Assuming that the incident angle of the wafer 6 in the shape measuring apparatus 200 is 0, the relationship between the Y table speed Vy and the Z table speed Vz - 34 - 1358529 is set to provide Vy / Vz = tan 0 Relative speed ratio. Further, the shape measuring device 200 detects a white light interference signal when the table is driven at the fixed speed. In other words, according to the driving profile information from the table control unit 1000, the timing of the processing unit 410 receiving the interference signal by the control unit 1100 is set to be the driving direction of the wafer 6 and the driving direction of the wafer 6. The timing at which the wafer 6 is reflected by the reflected light coincides. The drive profile information is accurately managed by a laser interferometer 81, and the position information of the wafer 6 at the time of receiving the interference signal can also be accurately managed based on the information obtained by the laser interferometer 81. It should be noted that FIG. 20 shows only the laser interferometer 8 1 as a Y-axis measuring interferometer for the sake of simplicity, but for a total of six axes (except for the Y-axis, there are X-axis, Z-axis, ω Laser interferometers of X, o; y, ω ζ are actually provided. In the range in which the counter table and the table are scanned at a relative speed ratio of Vy/Vz = tan 0, as shown in FIG. 22, the wafer scanning direction and the crystal in which the light is incident into the shape measuring device 200 The direction of the reflected light generated on the circle 20 is uniform. Therefore, the white light interference signal can be obtained by using light reflected from the same point on the wafer 6 as described above, and the wafer surface position can be accurately measured without being present on the wafer 6. The effect of the reflective distribution caused by the circuit pattern. Returning to Fig. 2, the measurement pitch in the Y direction will now be described, which can be measured by the shape measuring device 200. Since the Y table is driven at a fixed speed in the Y direction and the Z table is periodically driven in the Z direction, the relationship between the Y table speed Vy and the Z table speed Vz satisfies each cycle. Vy/VZ = tan0. The wafer 6 is defined as a measurement pitch in the γ direction by a distance of -35 - 1358529 which is shifted in the Y direction for a period of one cycle. - The actual number of instances will be presented below. Assuming that the incident angle incident on the wafer 6 in the measuring device 200 is 75 degrees and the fixed speed of the table is Vz = 10 mm/sec, the speed of the table is Vy = 10 x tan (75 °) = 37.5 mm / Sec. Assuming that the Z table is driven for 50 seconds, the measured pitch in the Y direction can be calculated: 37.5 mm/sec x 50 sec = 19 mm. The thousand signals under these conditions will be described below. Assume that the height position of the circle is Zw and the incident angle is β, and the change in the length of the optical path is expressed by 2Zwxcos0. Therefore, the white light interference signal with respect to the x-axis can be approximated by Ζ ρ = λ c (2c 〇 S 0 ), where λ c is the center wavelength of the wide-band light source used in the shape measuring apparatus 200. For example, in the example of = 600 nm, Zp = 1.1 6 microns can be calculated. Moreover, if the taking-in of the interference signal is 1 millisecond, the signal can be obtained from the 10 micrometer motion range in the Z direction. Since the basic period Zp of the dry number is 1.16 μm, eight interference fringes are received. Further, by using a photodiode or a light body array having a high reaction speed as the intensity of the photoelectric conversion element interference signal in the shape measuring apparatus 200, the sampling time can be measured by a sampling time of about 1 millisecond. The time can be converted into a distance of 0.01 m 10 mm/sec = 100 nm in the Z direction. In other words, the white light interference signal is sufficiently recognized by receiving eight interference signals' and the sample pitch in the two directions can be set to 100 nm. Therefore, by performing the above-mentioned bounded shape stage for the crystal available base in the EA c, the pseudo interference is detected by the second pole, and the quantity β sec χ can be taken as an example - 36-1358529 The signal processing, a peak position of the interfering signal can be measured at a resolution of about 1/50 of a sampling pitch of 100 nm in the z direction, that is, about 2 nm. Since the peak position can be detected with a resolution of 2 nm, the shape measurement can also be achieved with a resolution of 2 nm. A measurement point of the wafer 6 in the height direction and a method of driving the wafer table WS in the XY direction will be described below with reference to FIG. Fig. 24 shows the relationship between the measurement point of the shape measuring apparatus 200, the shape measuring apparatus 200, and the driving mode of the wafer table WS in the XY direction. In the example of Figure 24, the measurement is taken from point A on wafer 6 and is now implemented at point F after successive passes through points B, C, D and E. According to the numerical example described above, the measurement pitch in the Y direction in Fig. 24 is 1.9 mra. In detail, after measuring the measurement of the point A using the shape measuring apparatus 200, the Y stage is moved at the fixed speed Vy in the Y + direction for performing measurement of subsequent points until reaching the proximity of the wafer 6. Point B at the lower edge. After passing the edge of the wafer, as shown in Fig. 24, the X table is driven to step in the X direction while the Y table is decelerated and then accelerated in the Y-direction. This acceleration is stopped before the measurement point C near the edge of the wafer 6 reaches the measurement position of the shape measuring apparatus 200. Thereafter, the gamma table is again moved in the Y-direction at the fixed speed Vy. When the measurement of the subsequent measurement points such as the point C to the point D close to the upper edge of the wafer 6 is completed, the X table is again driven to step in the X direction and the Y table is controlled such that the Y The table can be moved in the Y+ direction at the fixed speed Vy until the next measurement point E is reached. While the Y table is moved in the Y + or Y- direction at the fixed speed Vy, the Z table also needs to be driven in the Z + or Z- direction at a speed Vz of -37 - 1358529. To meet Vy / Vz = tan 0. By repeating the above operation for the entire wafer surface, the height information about the entire surface of the wafer 6 can be obtained at a predetermined pitch in the X and Y directions. After obtaining the height information of the wafer 6 as described above, the exposure process is performed 'while placing the wafer accurately according to the measured wafer shape such that the height position of the wafer 6 is the same as that of the projection lens 32 in FIG. The optimal imaging plane is consistent. In fact, for an area that can be exposed in one pass (about 22 mm 2 in a stepper and about 8 mm χ 25 mm exposure slit width in a scanner), an approximate plane can be The least squares method is used to calculate the height information measured by the shape measuring device 200. Thereafter, the exposure is performed when the wafer is accurately placed in the z-direction and the oblique direction (ω X, oy) such that the calculated approximate plane is aligned with the optimal imaging plane of the projection lens 32. Consistent. Although the table scanning speed during exposure does not necessarily coincide with the scanning speed during the shape measurement of the wafer 6, the table scanning speed is preferably set to be as high as possible within a practically allowable range. The shape measurement of the wafer 6 can be performed when the wafer 6 is scanned in the Y direction and the Z direction by the shape measuring apparatus of the fifth exemplary embodiment as described above. Therefore, the fifth exemplary embodiment is advantageous in that a method of scanning the wafer in the Y and Z directions after achieving a higher yield than after placing each measurement point in the XYZ direction. -38 - 1358529 Sixth Exemplary Embodiment A sixth exemplary embodiment of the present invention will be described below. This sixth exemplary embodiment is an improvement of the fifth exemplary embodiment and is characterized in that the 'shape measuring apparatus is an interferometer 2A (FIG. 22) constituting the shape measuring apparatus of the fifth exemplary embodiment. Constructed with an interferometer 200B (Fig. 23), the interferometer 200B is constructed by steering the shape measuring device such that the incident direction of the measuring light is reversed. In other words, as shown in Fig. 26, the interferometers φ 200A and 200B are arranged side by side in the X direction such that they are alternately opposite in orientation. The structures according to the first exemplary embodiment and the second exemplary embodiment can be used as the structures of the interferometers 200 A and 200B. A shape measuring apparatus using the sixth exemplary embodiment will be described with reference to Fig. 25. Figure 25 is a graph showing the relationship between the drive profile of the wafer 6 moving the wafer 6 and the timing at which the interferometers 200A and 200B receive interference fringes.

• 在圖25中，水平軸代表Y桌台的位置及垂直軸代表Z 桌台的位置。該Y桌台以一固定的速度被驅動及該Z桌台 被週期性地驅動於一預定的範圍內。如圖25所示，該Z桌 台的驅動輪廓被設定爲包括一範圍，該Z桌台在該範圍內 是以一固定速度被驅動。假設入射到在該形狀測量設備 200內的晶圓6上的入射角度爲Θ，則Y桌台速度Vy與Z桌台 速度Vz之間的關係被設定爲可提供Vy/Vz = tane的相對速度 比。又，該干涉計200A及200B每一者都在該Z桌台以該固 定速度被驅動的時候偵測一白光干涉訊號。此外，該干涉 -39- 1358529 計200A及200B每一者都在從該晶圓6被反射的光的方向组 桌台掃描方向相一致的時候偵測該白光干涉訊號。 詳言之’該干涉計200A在Y桌台與Z桌台以固定速度 分別被驅動於Y+方向及Z+方向上時偵測該干涉訊號。在 另一方面’該干涉計200B是在Y桌台與Z桌台以固定速度 分別被驅動於Y+方向及Z-方向上時偵測該干涉訊號。又 ，該干涉計200A在Y桌台與Z桌台以固定速度分別被驅動 於Y -方向及Z-方向上時偵測該干涉訊號，及該干涉計200B 是在γ桌台與z桌台以固定速度分別被驅動於γ_方向及z + 方向上時偵測該干涉訊號。 藉由使用一個干涉計加上測量光的入射方向與該干涉 計的入射方向相反的另一干涉計，Y方向上的測量節距可 如圖25所示地被縮小。圖27顯示當干涉計A(200A)與干涉 計B (2 0 0 B )如圖2 6所示地彼此結合時，晶圓6上的測量點。 如圖27中所見，關於晶圓6的表面的高度資訊可在更小的 Y方向取樣節距下被測量，即第五示範性實施例的節距的 —半 。 一種測量晶圓6的整個表面的方法與上述的示範性實 施例相同，所以該方法的描述將不再被贅述。與第五示範 性實施例相同地，依據第六示範性實施例的形狀測量設備 可被用作爲曝光設備中的焦點偵測系統。 如圖26所示的干涉計A(200A)與干涉計B(200B)的結合 是一個例子且這些干涉計亦可用其它適合的配置來設置。 藉由安排多個干涉計於Y方向上，晶圓6的形狀可在更小 -40- 1358529 的γ方向節距下被測量。 第七示範性實施例 本發明的第七示範性實施例將參照圖28於下文中描述 。依據第七示範性實施例的形狀測量設備200係用來作爲 一偵測一作爲一測量目標物的基材（晶圓）6在Ζ方向上的表 面ilt置的設.備。 現參照圖28，該形狀測量設備200包括光源1 A及1B ’ 聚光透鏡2A及2B，狹縫板30A及30B，成像光學系統24A 及24B，及分束器5 a及5b每一者都被用來分隔及結合光線 。光源1A與1B每一者都是一LED(包括俗稱的白光LED)或 一鹵素燈泡，它發出具有寬波長寬度的寬頻光。 又，該形狀測量設備200包括一基材夾頭CK，其將該 測量目標物（基材）6夾持住，一Z桌台8，一 Y桌台9及一 X 桌台10其精確地對準（登錄）該測量目標物的位置，一參考 鏡7，及偵測器14A與14B。偵測器14A與14B係作爲光電轉 換元件，其可由一拾像元件，譬如一CCD或CMOS感測器 ，一光二極體來形成。 又，該形狀測量設備200包括一透鏡25與13A製成的 成像光學系統29A其被安排來將該基材6的表面成像於該 偵測器14A上，及一由透鏡23與13B所製成的成像光學系 統2 9B其被安排來光學系統其由透鏡11及13構成它們被安 排來將該基材6的表面成像於將該基材6的表面成像於該偵 測器14B上。 -41 - 1358529 第七示範性實施例中之構件的功能將於下文中描述》 在圖28中，從光源1A發出的光被聚光透鏡2A聚集在該狹 縫板3 0A上。該狹縫板3 0A具有一帶有一狹縫之矩形的透 光（狹縫）區域，該狹縫在該X軸的方向上之寬度爲50微米 及長度爲700微米，使得一矩形影像被該成像光學系統 24 A形成在基材6及參考鏡7上。一已經通過該成像光學系 統24 A的光線的一主要光束以0角度的入射角撞擊到該基 材6。因爲分束器5 a被設置在該成像光學系統2 4A的下游的 路徑的半途處，所以一具有總光線數量的1/2的光束被該 分束器5a反射並以與基材6的入射角相同的0角度入射撞 擊到該參考鏡7上。 已經通過該分束5a的光被照射在該基材6上，且從基 材6被反射的光（在下文中被稱爲”測量光”）進入到分束器 5b。在另一方面，被分束器5 a反射的光被照射到該參考鏡 7上，且被參考鏡7反射的光（在下文中被稱爲”參考光”）進 入分束器5b。因爲該光源1A，光線的極化狀態，入射角 度Θ，該分束器，該參考鏡等等都與第一示範性實施例相 同，所以這些構件的詳下說明將被省略。 被基材6反射的該測量光與被該參考鏡7反射的該參考 光被該分束器5b將它們彼此結合在一起且兩者都在被一分 束器27 A反射之後被該拾像元件（偵測器）14A偵測。因此， 在第七示範性實施例中’該狹縫板30A之可透光區域被該 成像光學系統24A成像於基材6及參考鏡7上，且其更再度 被該成像光學系統29A成像於該拾像元件14A的光接受表 -42- 1358529 面上。 一被設置在靠近該成像光學系統29A的瞳孔位置的該 孔徑擋止件（未示出）是用來具體指定該成像光學系統29A 的數値孔徑（NA)，使得該NA被設定在一極小的値，其範 圍在sin(0.5°)至sin(5°)之間。在該拾像元件14A的光接受 表面上’該測量光與該參考光彼此被重疊用以造成這兩種 光的干涉》—使用從圖28的左邊進來的光之干涉計A具有 上述的結構。 一使用從圖28的右邊進來的光之干涉計B的結構將於 下文中描述。在圖28中，從光源1B發出的光被聚光透鏡 2B聚集在該狹縫板30B上。該狹縫板30B具有一帶有一狹 縫之矩形的可透光（狹縫）區域，該狹縫在該X軸的方向上 之狹縫寬度爲50微米及長度爲700微米，使得一矩形影像 被該成像光學系統24B形成在基材6及參考鏡7上。一已經 通過該成像光學系統24B的光線的一主要光束以0角度的 入射角撞擊到該基材6。因爲分束器5b被設置在該成像光 學系統24B的下游的路徑的半途處，所以一具有總光線數 量的1/2的光束被該分束器5b反射並以與基材6的入射角相 同的0角度入射撞擊到該參考鏡7上。 已經通過該分束5b的光被照射在該基材6上，且從基 材6被反射的光（在下文中被稱爲”測量光”）進入到分束器 5a。在另一方面，被分束器5b反射的光被照射到該參考鏡 7上，且被參考鏡7反射的光（在下文中被稱爲”參考光”）進 入分束器5b。因爲該光源1B，光線的極化狀態，入射角度 -43- 1358529 0，該分束器，該參考鏡等等都與第一示範性實施例相同 ，所以這些構件的詳下說明將被省略。 被基材6反射的該測量光與被該參考鏡7反射的該參考 光被該分束器5 a將它們彼此結合在一起且兩者都在被一分 束器27B反射之後被該拾像元件（偵測器）14B偵測。因此， 該狹縫板30B之可透光區域被該成像光學系統24B成像於 基材6及參考鏡7上，且其更再度被該成像光學系統29B成 像於該拾像元件14B的光接受表面上。 一被設置在靠近該成像光學系統29B的瞳孔位置的該 孔徑擋止件（未示出）是用來具體指定該成像光學系統29B 的數値孔徑（NA)，使得該NA被設定在一極小的値，其範 圍在sin(0.5°)至Sin(5。）之間。在該拾像元件14B的光接受 表面上’該測量光與該參考光彼此被重疊用以造成這兩種 光的干涉。 獲得白光干涉訊號的方法及處理該白光干涉訊號的方 法並未在此處被描述，因爲這些方法都在上文中的第五示 範性實施例說明過了，其可被被應用到使用從圖28的左邊 進來的光之干涉計A與使用從圖28的右邊進來的光之干涉 計B上。 在依據第七示範性實施例的形狀測量設備中，依據第 八不範性之干涉計A(200A)與干涉計B(200B)以一不同的方 式彼此被結合。雖然在第六示範性實施例中的干涉計A與 B被結合用以測量偏移於X方向上的之不同的點，在第七 不範14實施例中的干涉計能夠測量在X方向上之同一點。 -44 - 1358529 又，該等構件可爲兩個干涉計所共享。此特徵在實現一更 精巧的設備及降低成本上是有效的。 當基材6是一晶圓時，測量整個晶圓6的表面的方法與 第五示性實射例的方法是相同的，所以將不再於此處加以 贅述。與第五及第六示範性實施例相同的，依據第七示範 性實施例的形狀測量設備亦可被用作爲在該曝光設備中的 焦點偵測系統。 雖然本發明已參照示範性實施例加以描述，但應被瞭 解的是，本發明並不侷限於所揭露的實施例。下面申請專 利範圍項的範圍與涵蓋所有的改變，等效結構功能之最廣 意的銓釋是相一致的。 【圖式簡單說明】 圖1爲一示意圖其顯示依據本發明的第一示範性實施 例的形狀測量設備。 φ 圖2爲—說明圖其顯示在本發明的第一示範性實施例 中形狀測量的偵測原理。 圖3爲一示意圖其顯示依據本發明的第二示範性實施 例的形狀測量設備。 圖4爲一示意圖其顯示依據本發明的第三示範性實施 例的形狀測量設備。 圖5 A爲依據本發明的第三示範性實施例的形狀測量 設備的部分放大視圖。 圖5 B爲本發明的第三示範性實施例的變化例的形狀測 -45- 1358529 量設備的部分放大視圖》 圖6爲一圖表其畫出在本發明的第一及第二示範性實 施例中獲得的干涉訊號。 圖7A—圖表其畫出在本發明的第三示範性實施例中 獲得的干涉訊號。 圖7B顯示一拾像元件的光接受表面。 圖8爲一方塊圖其顯示包括了依據本發明的第四範性 實施例的形狀測量設備之曝光設備。 圖9爲一示意圖其顯示在本發明的第四示範性實施例 中的一焦點控制感測器（表面位置測量設備）。 圖10爲一方塊圖其顯示在本發明的第四示範性實施例 中的一校準方法。 圖11爲在本發明的第四示範性實施例中的一曝光程序 的流程圖。 圖I2爲在本發明的第四示範性實施例中的一校準方法 的流程圖。 圖13爲在本發明的第四示範性實施例中的一曝光方法 的流程圖。 圖Μ爲一說明圖其顯示在本發明的第四示範性實施例 中的校準方法。 圖15爲一示意圖其顯示一已知的形狀測量設備。 圖16爲一圖表其顯示該已知形狀測量設備的一個問題 〇 圖17Α爲一示意圖其顯示當沒有圖案形成在一晶圓上（ -46- 1358529 例子1)時在該已知的形狀測量設備中的測量位置。 圖17B爲一示意圖其顯示當有圖案形成在一晶圓上（例 子2)時在該已知的形狀測量設備中的測量位置。 圖18爲一說明圖其顯示使用一已知的表面位置測量設 備所造成的問題》 圖19爲一圖表其畫出在圖18的已知表面位置測量設備 中測得之一訊號輪廓的例子。 圖20爲一方塊圖其顯示依據本發明的第五範性實施例 的曝光設備。 圖21爲一圖表其顯示在該第五示範性實施例中一桌台 驅動輪廓與接受（taking-in)之間的關係。 圖22爲一說明圖其顯示在依據本發明的第五範性實施 例中該形狀測量設備及一桌台掃描方向。 圖23爲一說明圖其顯示當光的入射方向在該形狀測量 設備中被逆轉時該桌台掃描方向。 圖24顯示一XY桌台驅動方法與圖22中之第五示範性 實施例中測量點之間的關係。 圖25爲一圖表其顯示在該第六示範性實施例中一桌台 驅動輪廓與接受（taking-in)之間的關係。 圖26爲一說明圖其顯示依據本發明的第六示範性實施 例的一（構成形狀測量設備的）干涉計的配置。 圖27爲一說明圖其顯示在本發明的第六示範性實施例 中的測量點。 圖28爲一示意圖其顯示依據本發明的第七示範性實施 -47- 1358529 例的形狀測量設備。• In Figure 25, the horizontal axis represents the position of the Y table and the vertical axis represents the position of the Z table. The Y table is driven at a fixed speed and the Z table is periodically driven within a predetermined range. As shown in Fig. 25, the driving profile of the Z table is set to include a range in which the Z table is driven at a fixed speed. Assuming that the incident angle incident on the wafer 6 in the shape measuring apparatus 200 is Θ, the relationship between the Y table speed Vy and the Z table speed Vz is set to provide a relative speed of Vy/Vz = tane. ratio. Moreover, each of the interferometers 200A and 200B detects a white light interference signal while the Z table is being driven at the fixed speed. In addition, the interference -39-1358529 meters 200A and 200B each detect the white light interference signal when the scanning direction of the table of the light reflected from the wafer 6 coincides. In detail, the interferometer 200A detects the interference signal when the Y table and the Z table are driven at the fixed speeds in the Y+ direction and the Z+ direction, respectively. On the other hand, the interferometer 200B detects the interference signal when the Y table and the Z table are driven at the fixed speeds in the Y+ direction and the Z-direction, respectively. Moreover, the interferometer 200A detects the interference signal when the Y table and the Z table are driven in the Y-direction and the Z-direction at a fixed speed, respectively, and the interferometer 200B is on the γ table and the z table. The interference signal is detected when driven at a fixed speed in the γ_ direction and the z + direction, respectively. The measurement pitch in the Y direction can be reduced as shown in Fig. 25 by using an interferometer plus another interferometer that measures the incident direction of the light opposite to the incident direction of the interferometer. Figure 27 shows the measurement points on the wafer 6 when the interferometer A (200A) and the interferometer B (200B) are combined with each other as shown in Figure 26. As seen in Fig. 27, the height information about the surface of the wafer 6 can be measured at a smaller Y-direction sampling pitch, i.e., the half of the pitch of the fifth exemplary embodiment. A method of measuring the entire surface of the wafer 6 is the same as the above-described exemplary embodiment, so the description of the method will not be repeated. As with the fifth exemplary embodiment, the shape measuring apparatus according to the sixth exemplary embodiment can be used as a focus detection system in an exposure apparatus. The combination of interferometer A (200A) and interferometer B (200B) as shown in Figure 26 is an example and these interferometers can also be arranged in other suitable configurations. By arranging a plurality of interferometers in the Y direction, the shape of the wafer 6 can be measured at a gamma directional pitch of -40 - 1358529. Seventh Exemplary Embodiment A seventh exemplary embodiment of the present invention will be described below with reference to Fig. 28. The shape measuring apparatus 200 according to the seventh exemplary embodiment is used as a device for detecting a surface of a substrate (wafer) 6 as a measuring target in the x direction. Referring now to Figure 28, the shape measuring apparatus 200 includes light sources 1 A and 1B 'concentrating lenses 2A and 2B, slit plates 30A and 30B, imaging optical systems 24A and 24B, and beam splitters 5 a and 5 b each Used to separate and combine light. Each of the light sources 1A and 1B is an LED (including a so-called white LED) or a halogen bulb which emits broadband light having a wide wavelength width. Further, the shape measuring apparatus 200 includes a substrate chuck CK that holds the measurement target (substrate) 6, a Z table 8, a Y table 9 and an X table 10 which are precisely The position of the measurement target is aligned (registered), a reference mirror 7, and detectors 14A and 14B. The detectors 14A and 14B are used as photoelectric conversion elements, which can be formed by a pickup element such as a CCD or CMOS sensor, a photodiode. Further, the shape measuring apparatus 200 includes an imaging optical system 29A made of lenses 25 and 13A which is arranged to image the surface of the substrate 6 on the detector 14A, and a lens 23 and 13B. The imaging optical system 2 9B is arranged to be an optical system which is constituted by lenses 11 and 13 which are arranged to image the surface of the substrate 6 onto the surface of the substrate 6 onto the detector 14B. -41 - 1358529 The function of the member in the seventh exemplary embodiment will be described later. In Fig. 28, light emitted from the light source 1A is collected by the collecting lens 2A on the slit plate 30A. The slit plate 30A has a rectangular light-transmissive (slit) region with a slit having a width of 50 μm and a length of 700 μm in the direction of the X-axis, so that a rectangular image is imaged. The optical system 24 A is formed on the substrate 6 and the reference mirror 7. A primary beam of light that has passed through the imaging optical system 24 A strikes the substrate 6 at an angle of incidence of 0 degrees. Since the beam splitter 5a is disposed halfway along the path downstream of the imaging optical system 24A, a light beam having 1/2 of the total number of rays is reflected by the beam splitter 5a and incident on the substrate 6 The same angle 0 angle incident hits the reference mirror 7. Light having passed through the splitting beam 5a is irradiated onto the substrate 6, and light reflected from the substrate 6 (hereinafter referred to as "measuring light") enters the beam splitter 5b. On the other hand, the light reflected by the beam splitter 5 a is irradiated onto the reference mirror 7, and the light reflected by the reference mirror 7 (hereinafter referred to as "reference light") enters the beam splitter 5b. Since the light source 1A, the polarization state of the light, the incident angle Θ, the beam splitter, the reference mirror, and the like are the same as those of the first exemplary embodiment, the detailed description of these members will be omitted. The measurement light reflected by the substrate 6 and the reference light reflected by the reference mirror 7 are bonded to each other by the beam splitter 5b and both are reflected by a beam splitter 27 A. The component (detector) 14A detects. Therefore, in the seventh exemplary embodiment, the permeable region of the slit plate 30A is imaged by the imaging optical system 24A on the substrate 6 and the reference mirror 7, and is further imaged by the imaging optical system 29A. The light of the image pickup element 14A is received on the surface of the surface -42 to 1358529. A aperture stop (not shown) disposed adjacent to the pupil position of the imaging optical system 29A is used to specifically specify the number of apertures (NA) of the imaging optical system 29A such that the NA is set at a minimum The range of 値 is between sin (0.5 °) and sin (5 °). On the light receiving surface of the image pickup element 14A, 'the measurement light and the reference light are overlapped with each other to cause interference of the two kinds of light" - the interferometer A using light coming in from the left side of Fig. 28 has the above structure . The structure of an interferometer B using light coming in from the right side of Fig. 28 will be described later. In Fig. 28, light emitted from the light source 1B is collected by the collecting lens 2B on the slit plate 30B. The slit plate 30B has a rectangular light transmissive (slit) region with a slit having a slit width of 50 μm and a length of 700 μm in the X-axis direction, so that a rectangular image is The imaging optical system 24B is formed on the substrate 6 and the reference mirror 7. A main beam of light having passed through the imaging optical system 24B strikes the substrate 6 at an incident angle of 0 degrees. Since the beam splitter 5b is disposed halfway along the path downstream of the imaging optical system 24B, a light beam having 1/2 of the total number of rays is reflected by the beam splitter 5b and has the same incident angle as the substrate 6. The 0 angle incident hits the reference mirror 7. Light having passed through the splitting beam 5b is irradiated onto the substrate 6, and light reflected from the substrate 6 (hereinafter referred to as "measuring light") enters the beam splitter 5a. On the other hand, the light reflected by the beam splitter 5b is irradiated onto the reference mirror 7, and the light reflected by the reference mirror 7 (hereinafter referred to as "reference light") enters the beam splitter 5b. Since the light source 1B, the polarization state of the light, the incident angle -43 - 1358529 0, the beam splitter, the reference mirror, and the like are the same as those of the first exemplary embodiment, the detailed description of these members will be omitted. The measurement light reflected by the substrate 6 and the reference light reflected by the reference mirror 7 are bonded to each other by the beam splitter 5 a and both are reflected by a beam splitter 27B. The component (detector) 14B detects. Therefore, the light transmissive region of the slit plate 30B is imaged on the substrate 6 and the reference mirror 7 by the imaging optical system 24B, and is further imaged by the imaging optical system 29B on the light receiving surface of the pickup element 14B. on. A aperture stop (not shown) disposed adjacent to the pupil position of the imaging optical system 29B is used to specifically specify the number of apertures (NA) of the imaging optical system 29B such that the NA is set to a minimum The range is between sin (0.5 °) and Sin (5.). On the light receiving surface of the image pickup element 14B, the measurement light and the reference light are overlapped with each other to cause interference of the two kinds of light. The method of obtaining a white light interference signal and the method of processing the white light interference signal are not described herein, as these methods have all been described in the fifth exemplary embodiment above, which can be applied to use from FIG. The interferometer A of the incoming light on the left side is on the interferometer B using the light coming in from the right side of FIG. In the shape measuring apparatus according to the seventh exemplary embodiment, the interferometer A (200A) and the interferometer B (200B) according to the eighth aspect are combined with each other in a different manner. Although the interferometers A and B in the sixth exemplary embodiment are combined to measure different points shifted in the X direction, the interferometer in the seventh embodiment can be measured in the X direction. The same point. -44 - 1358529 Again, these components can be shared by two interferometers. This feature is effective in implementing a more compact device and reducing costs. When the substrate 6 is a wafer, the method of measuring the surface of the entire wafer 6 is the same as that of the fifth exemplary embodiment, and therefore will not be described again here. Similarly to the fifth and sixth exemplary embodiments, the shape measuring apparatus according to the seventh exemplary embodiment can also be used as a focus detecting system in the exposure apparatus. Although the present invention has been described with reference to the exemplary embodiments, it is understood that the invention is not limited to the disclosed embodiments. The scope of the patent terms below is consistent with the broadest interpretation of all equivalents and equivalent structural functions. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a shape measuring apparatus according to a first exemplary embodiment of the present invention. φ Fig. 2 is an explanatory view showing the principle of detecting the shape measurement in the first exemplary embodiment of the present invention. Fig. 3 is a schematic view showing a shape measuring apparatus according to a second exemplary embodiment of the present invention. Fig. 4 is a schematic view showing a shape measuring apparatus according to a third exemplary embodiment of the present invention. Fig. 5A is a partially enlarged view of a shape measuring apparatus in accordance with a third exemplary embodiment of the present invention. Figure 5B is a partially enlarged view of a shape measuring -45 - 1358529 measuring device of a variation of the third exemplary embodiment of the present invention. Figure 6 is a diagram showing the first and second exemplary embodiments of the present invention. The interference signal obtained in the example. Fig. 7A - graph showing the interference signal obtained in the third exemplary embodiment of the present invention. Figure 7B shows the light receiving surface of an image pickup element. Figure 8 is a block diagram showing an exposure apparatus including a shape measuring apparatus according to a fourth exemplary embodiment of the present invention. Fig. 9 is a schematic view showing a focus control sensor (surface position measuring device) in a fourth exemplary embodiment of the present invention. Figure 10 is a block diagram showing a calibration method in a fourth exemplary embodiment of the present invention. Figure 11 is a flow chart showing an exposure procedure in a fourth exemplary embodiment of the present invention. Figure 12 is a flow chart of a calibration method in a fourth exemplary embodiment of the present invention. Figure 13 is a flow chart showing an exposure method in a fourth exemplary embodiment of the present invention. Figure 2 is a diagram showing a calibration method shown in a fourth exemplary embodiment of the present invention. Figure 15 is a schematic view showing a known shape measuring apparatus. Figure 16 is a diagram showing a problem of the known shape measuring apparatus. Figure 17 is a schematic view showing the known shape measuring apparatus when no pattern is formed on a wafer (-46-1358529 Example 1). The measurement position in . Fig. 17B is a schematic view showing the measurement position in the known shape measuring apparatus when a pattern is formed on a wafer (Example 2). Fig. 18 is an explanatory view showing the problem caused by using a known surface position measuring device. Fig. 19 is a diagram showing an example of a signal profile measured in the known surface position measuring device of Fig. 18. Figure 20 is a block diagram showing an exposure apparatus in accordance with a fifth exemplary embodiment of the present invention. Figure 21 is a diagram showing the relationship between a table driving profile and taking-in in the fifth exemplary embodiment. Figure 22 is an explanatory view showing the shape measuring apparatus and a table scanning direction in a fifth exemplary embodiment in accordance with the present invention. Fig. 23 is an explanatory view showing the table scanning direction when the incident direction of light is reversed in the shape measuring apparatus. Fig. 24 shows the relationship between an XY table driving method and the measuring points in the fifth exemplary embodiment in Fig. 22. Figure 25 is a diagram showing the relationship between a table driving profile and taking-in in the sixth exemplary embodiment. Figure 26 is a diagram showing the configuration of an interferometer (constituting a shape measuring device) in accordance with a sixth exemplary embodiment of the present invention. Figure 27 is a diagram showing measurement points shown in a sixth exemplary embodiment of the present invention. Figure 28 is a schematic view showing a shape measuring apparatus of a seventh exemplary embodiment of the present invention - 47-1358529.

【主要元件符號說明】 101 :光源 1 03 :透鏡 105 :分束器 1 30 :參考鏡 3 9 7 :驅動機制 1 70 :集束器 1 7 1 :透鏡 1 7 3 :透鏡 1 9 0 :拾像元件 3 6 0 :晶圓 200 :形狀測量設備 6 :基材（晶圓） 1 :光源 2 :聚光透鏡 3 :針孔 4 :透鏡 5a :分束器 8 : Z桌台 9 : Y桌台 10 : X桌台 5 b :分束器 -48 1358529 I 4 :拾像元件 II :透鏡 13 :透鏡 1 2 :孔徑擋止件 50 :處理單元 5 1 :儲存單元 5 2 :顯示單元 7 :參考鏡 1 6 :成像光學系統 24 =成像光學系統 22 :孔徑擋止件 2 3 :透鏡 30 :狹縫板 3〇r :狹縫影像 3 0m :狹縫影像 8〇〇 :照明設備 801 :照明設備 3 1 :標線板 32 =投影光學系統 w S :晶圓桌台 3 3 :焦點控制感測器 3 9 :參考板 400 :處理單元 410 :處理單元 -49 1358529 RS :標線板桌台 1 1 0 0 :控制單元 1 000 :晶圓桌台控制單元 800 :光源單元 801 :照明光學系統 105 :光源 106 :聚光透鏡[Main component symbol description] 101: Light source 103: Lens 105: Beam splitter 1 30: Reference mirror 3 9 7: Driving mechanism 1 70: Buncher 1 7 1 : Lens 1 7 3 : Lens 1 9 0 : Pickup Element 3 6 0 : Wafer 200 : Shape measuring device 6 : Substrate (wafer) 1 : Light source 2 : Condenser lens 3 : Pinhole 4 : Lens 5a : Beam splitter 8 : Z table 9 : Y table 10 : X table 5 b : beam splitter - 48 1358529 I 4 : pickup element II : lens 13 : lens 1 2 : aperture stop 50 : processing unit 5 1 : storage unit 5 2 : display unit 7 : reference Mirror 1 6 : Imaging optical system 24 = Imaging optical system 22 : Aperture stop 2 3 : Lens 30 : Slit plate 3 〇 r : Slit image 3 0 m : Slit image 8 〇〇: Lighting device 801 : Lighting device 3 1 : reticle 32 = projection optical system w S : wafer table 3 3 : focus control sensor 3 9 : reference plate 400 : processing unit 410 : processing unit - 49 1358529 RS : reticle table 1 1 0 0 : Control unit 1 000 : Wafer table control unit 800 : Light source unit 801 : Illumination optical system 105 : Light source 106 : Condenser lens

107 :圖案板 1 0 8 :透鏡 1 0 9 :鏡子 1 1 〇 :鏡子 1 0 8 :透鏡 1 1 1 :透鏡107 : Pattern plate 1 0 8 : Lens 1 0 9 : Mirror 1 1 〇 : Mirror 1 0 8 : Lens 1 1 1 : Lens

112: C CD感測器 l〇7i :狹縫 8 1 :雷射干涉計 2 0 0 A :千涉計 2 0 0 B :干涉計 1 A :光源 1 B :光源 2A :聚光透鏡 2B :聚光透鏡 ' 24A :成像光學系統 24B :成像光學系統 -50 1358529 30A :狹縫板 30B :狹縫板 29A :成像光學系統 29B :成像光學系統 1 3 A :透鏡 25 :透鏡 1 3 B :透鏡 27A :分束器 27B :分束器112: C CD sensor l〇7i: slit 8 1 : laser interferometer 2 0 0 A: thousand meter 2 0 0 B: interferometer 1 A: light source 1 B: light source 2A: collecting lens 2B: Condenser lens ' 24A : Imaging optical system 24B : Imaging optical system - 50 1358529 30A : Slit plate 30B : Slit plate 29A : Imaging optical system 29B : Imaging optical system 1 3 A : Lens 25 : Lens 1 3 B : Lens 27A: Beam splitter 27B: Beam splitter

Claims (1)

1358529 P年孑月λΤ曰修(更)正替換頁 第096M3948號專利申請案中文申請專利範圍修正本 民國100年8月15日修正 十、申請專利範圍 1. 一種用來測量一測量目標物的表面形狀的測量方 法，該方法包含： 將來自一光源的光分成測量光及參考光，該測量光被 傾斜地入射到該測量目標物的一表面上，該參考光被入射 到一參考鏡上； 將被該測量目標物所反射的該測量光與被該參考鏡所 反射的該參考光引導至一光電轉換元件； 在移動該測量目標物時，用該光電轉換元件來偵測由 該測量光與該參考光所形成的干涉光；及 根據由該被偵測到的干涉光的一干涉訊號來測量該測 量目標物的表面形狀， 其中在藉由將該測量目標物移動於該測量光被反射的 方向上來改變該測量光與該參考光之間的路徑長度差的同 時，該干涉訊號係藉由用該光電轉換元件來偵測該干涉光 而被獲得的。 2. —種用來測量一測量目標物的表面形狀的測量方 法，該方法包含： 將來自一光源的光分成測量光及參考光，該測量光被 傾斜地入射到該測量目標物的一表面上，該參考光被入射 到一參考鏡上； 將被該測量目標物所反射的該測量光與被該參考鏡所 1358529 p年J月，r日修(更)正替換頁I 反射的該參考光引導至一光電轉換元件； 在移動該測量目標物時，用該光電轉換元件來偵測由 該測量光與該參考光所形成的干涉光；及 根據由該被偵測到的干涉光的一干涉訊號來測量該測 量目標物的表面形狀， 其中該干涉訊號是在與該測量目標物的移動同步地改 變該光電轉換元件的一畫素的時候被獲得的，致使該干涉 訊號從該測量光被獲得’其中該測量光是在該測量目標物 的表面上的同一位置處被反射的測量光。 3 .—種形狀測量設備，其被建構來測量一測量目標物 的表面形狀，該設備包含： 一光發射光學系統，其被安排來將來自一光源的光分 成測量光與參考光，該測量光被傾斜地入射到該測量目標 物的表面上，該參考光被入射到一參考鏡上： 一光接受光學系統，其被安排來將被該測量目標物所 反射的該測量光與被該參考鏡所反射的該參考光引導至一 光電轉換元件；及 一驅動機構其被建構來移動該測量目標物， 其中該光電轉換元件偵測由該測量光與該參考光所形 成的干涉光，及 其中該測量目標物的表面形狀係根據由該測量光所得 到之干涉訊號來測量該測量目標物的表面形狀，該測量光 是在該測量目標物的表面上的同一位置處被反射的測量 光。 -2- 1358529 ‘ 丨畔<?月〖jr日修(更)正替換頁 4.一種形狀測量設備，其被建構來測量一測量目標物 的表面形狀，該設備包含： 一光發射光學系統，其被安排來將來自一光源的光分 ' 成測量光與參考光’該測量光被傾斜地入射到該測量目標 物的表面上，該參考光被入射到一參考鏡上； 一光接受光學系統，其被安排來將被該測量目標物所 反射的該測量光與被該參考鏡所反射的該參考光引導至一 φ 光電轉換元件；及 一驅動機制其被建構來移動該測量目標物， 其中該光電轉換元件偵測由該測量光與該參考光所形 成的干涉光，及 其中該測量目標物的表面形狀係根據由該被偵測到的 干涉光的一干涉訊號來測量的， 其中該干涉訊號是在與該測量目標物的移動同步地改 變該光電轉換元件的一畫素的時候被獲得的，致使該干渉 Φ 訊號從該測量光被獲得，其中該測量光是在該測量目標物 的表面上的同一位置處被反射的測量光。 5 · —種形狀測量設備，其被建構來測量一測量目標物 的表面形狀，該設備包含： 一第一干涉計；及 一第二干涉計， 其中該第一干涉計與該第二干涉計每一者都是由申請 專利範圍第3或4項之形狀測量設備所構成，及 該測量光入射到該第一干涉計上的入射方向是與該測 -3- 1358529 _ ⑷年士月cm修(更)正替換頁 量光入射到該第二干涉計上的入射方向相反的。 6.—種曝光設備，其被建構來依據在一原始板 (original)上的圖案曝照一基材，該設備包含： 如申請專利範圍第3或4項之形狀測量設備， 其中一光阻被塗覆在該基材的表面上’及 該形狀測量設備測量該基材或該光阻的表面形狀。1358529 P 孑 Τ曰 Τ曰 ( ( ( ( ( 096 第 第 第 第 第 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 a method for measuring a surface shape, the method comprising: dividing light from a light source into measurement light and reference light, the measurement light being obliquely incident on a surface of the measurement target, the reference light being incident on a reference mirror; Directing the measurement light reflected by the measurement target object and the reference light reflected by the reference mirror to a photoelectric conversion element; when moving the measurement target object, detecting the measurement light by the photoelectric conversion element Interference light formed with the reference light; and measuring a surface shape of the measurement target according to an interference signal of the detected interference light, wherein the measurement target is moved by the measurement target While the direction of the reflection changes the path length difference between the measurement light and the reference light, the interference signal is detected by the photoelectric conversion element. Light is obtained. 2. A measuring method for measuring a surface shape of a measuring target, the method comprising: dividing light from a light source into measuring light and reference light, the measuring light being obliquely incident on a surface of the measuring target The reference light is incident on a reference mirror; the measurement light reflected by the measurement target and the reference reflected by the reference mirror are replaced by (1) Light is guided to a photoelectric conversion element; when the measurement target is moved, the photoelectric conversion element is used to detect interference light formed by the measurement light and the reference light; and according to the detected interference light An interference signal is used to measure a surface shape of the measurement target, wherein the interference signal is obtained when a pixel of the photoelectric conversion element is changed in synchronization with movement of the measurement target, such that the interference signal is measured from the measurement Light is obtained 'where the measurement light is measurement light that is reflected at the same position on the surface of the measurement target. 3. A shape measuring device constructed to measure a surface shape of a measuring target, the device comprising: a light emitting optical system arranged to split light from a light source into measuring light and reference light, the measuring Light is obliquely incident on a surface of the measurement target, the reference light being incident on a reference mirror: a light receiving optical system arranged to reflect the measurement light reflected by the measurement target with the reference The reference light reflected by the mirror is guided to a photoelectric conversion element; and a driving mechanism configured to move the measurement target, wherein the photoelectric conversion element detects interference light formed by the measurement light and the reference light, and Wherein the surface shape of the measurement target is a surface shape of the measurement target according to an interference signal obtained by the measurement light, the measurement light being measurement light reflected at the same position on the surface of the measurement target . -2- 1358529 '丨畔<?月〗 〖jr daily repair (more) replacement page 4. A shape measuring device constructed to measure the surface shape of a measuring target, the device comprising: a light emitting optical system Arranging to divide light from a light source into measurement light and reference light. The measurement light is obliquely incident on a surface of the measurement target, the reference light being incident on a reference mirror; a light receiving optics a system arranged to direct the measurement light reflected by the measurement target and the reference light reflected by the reference mirror to a φ photoelectric conversion element; and a driving mechanism configured to move the measurement target The photoelectric conversion element detects the interference light formed by the measurement light and the reference light, and the surface shape of the measurement target is measured according to an interference signal of the detected interference light. Wherein the interference signal is obtained when the pixel of the photoelectric conversion element is changed in synchronization with the movement of the measurement target, so that the dry Φ signal is obtained from the measurement light. Wherein the measurement light is measurement light that is reflected at the same position on the surface of the measurement target. a shape measuring apparatus configured to measure a surface shape of a measuring target, the apparatus comprising: a first interferometer; and a second interferometer, wherein the first interferometer and the second interferometer Each is composed of a shape measuring device of claim 3 or 4, and the incident direction of the measuring light incident on the first interferometer is the same as the measurement -3- 1358529 _ (4) (More) the direction of incidence of the incident light incident on the second interferometer is reversed. 6. An exposure apparatus constructed to expose a substrate according to a pattern on an original, the apparatus comprising: a shape measuring apparatus according to claim 3 or 4, wherein a photoresist The surface measuring device is coated on the surface of the substrate and the shape measuring device measures the surface shape of the substrate or the photoresist. 1358529 • 第_43948號專利申請案 中文圖式修正頁 叫年》月哆日修(更)正替換頁 民國100年8月15日修正1358529 • Patent application No. _43948 Chinese figure correction page Calling the year, the day of the month, the repair (more), the replacement page, the amendment of the Republic of China on August 15, 100 6 MS6 MS 台的位置 圖7B M—Position of the station Figure 7B M— Z桌台的位置Z table position
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