CN103365115B - 曝光装置、曝光装置的控制方法和器件制造方法 - Google Patents

曝光装置、曝光装置的控制方法和器件制造方法 Download PDF

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Publication number
CN103365115B
CN103365115B CN201310106051.8A CN201310106051A CN103365115B CN 103365115 B CN103365115 B CN 103365115B CN 201310106051 A CN201310106051 A CN 201310106051A CN 103365115 B CN103365115 B CN 103365115B
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CN
China
Prior art keywords
wafer
resist
inclination
exposure
alignment mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310106051.8A
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English (en)
Chinese (zh)
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CN103365115A (zh
Inventor
坂本宪稔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN103365115A publication Critical patent/CN103365115A/zh
Application granted granted Critical
Publication of CN103365115B publication Critical patent/CN103365115B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201310106051.8A 2012-03-30 2013-03-29 曝光装置、曝光装置的控制方法和器件制造方法 Active CN103365115B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-082090 2012-03-30
JP2012082090A JP5984459B2 (ja) 2012-03-30 2012-03-30 露光装置、露光装置の制御方法及びデバイス製造方法

Publications (2)

Publication Number Publication Date
CN103365115A CN103365115A (zh) 2013-10-23
CN103365115B true CN103365115B (zh) 2016-01-27

Family

ID=49234586

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310106051.8A Active CN103365115B (zh) 2012-03-30 2013-03-29 曝光装置、曝光装置的控制方法和器件制造方法

Country Status (4)

Country Link
US (1) US9097991B2 (https=)
JP (1) JP5984459B2 (https=)
KR (1) KR101599577B1 (https=)
CN (1) CN103365115B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11366397B2 (en) 2013-07-10 2022-06-21 Qoniac Gmbh Method and apparatus for simulation of lithography overlay
US10379447B2 (en) * 2013-07-10 2019-08-13 Qoniac Gmbh Method and apparatus for simulation of lithography overlay
KR101752761B1 (ko) * 2016-12-14 2017-06-30 (주)이즈미디어 테이블 틸팅 확인 장치 및 확인 방법
JP7173891B2 (ja) * 2019-02-14 2022-11-16 キヤノン株式会社 計測装置、露光装置、および物品製造方法
KR102804207B1 (ko) 2022-10-04 2025-05-09 세메스 주식회사 기판 검사 장치 및 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2646417B2 (ja) * 1992-10-30 1997-08-27 キヤノン株式会社 露光装置
EP0833208A2 (en) * 1996-08-27 1998-04-01 Nikon Corporation A stage apparatus

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US4001774A (en) 1975-01-08 1977-01-04 Exxon Production Research Company Method of transmitting signals from a drill bit to the surface
JP2816272B2 (ja) 1992-05-12 1998-10-27 株式会社日立製作所 位置決め装置
JPH0766115A (ja) 1993-08-23 1995-03-10 Canon Inc 露光装置
JP3634068B2 (ja) 1995-07-13 2005-03-30 株式会社ニコン 露光方法及び装置
JPH1154423A (ja) 1997-07-31 1999-02-26 Horiba Ltd 露光装置
US6376329B1 (en) * 1997-08-04 2002-04-23 Nikon Corporation Semiconductor wafer alignment using backside illumination
JP4434372B2 (ja) * 1999-09-09 2010-03-17 キヤノン株式会社 投影露光装置およびデバイス製造方法
JP2002203773A (ja) * 2000-12-28 2002-07-19 Canon Inc 露光装置
KR100579603B1 (ko) 2001-01-15 2006-05-12 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치
TW569368B (en) * 2001-11-14 2004-01-01 Tokyo Electron Ltd Substrate inspecting apparatus, coating and developing apparatus, and substrate inspecting method
KR100809955B1 (ko) * 2001-11-27 2008-03-06 삼성전자주식회사 포토리소그래피 공정의 얼라인 계측방법
JP3890233B2 (ja) 2002-01-07 2007-03-07 キヤノン株式会社 位置決めステージ装置、露光装置及び半導体デバイスの製造方法
JP2003224057A (ja) * 2002-01-30 2003-08-08 Hitachi Ltd 半導体装置の製造方法
AU2003252349A1 (en) * 2002-07-31 2004-02-16 Nikon Corporation Position measuring method, position control method, exposure method and exposure apparatus, and device manufacturing method
JP2006269669A (ja) * 2005-03-23 2006-10-05 Canon Inc 計測装置及び計測方法、露光装置並びにデバイス製造方法
JP2007194419A (ja) * 2006-01-19 2007-08-02 Seiko Epson Corp 露光処理方法及び、半導体装置の製造方法
JP5489849B2 (ja) * 2010-05-11 2014-05-14 キヤノン株式会社 位置計測装置及び方法、露光装置並びにデバイス製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2646417B2 (ja) * 1992-10-30 1997-08-27 キヤノン株式会社 露光装置
EP0833208A2 (en) * 1996-08-27 1998-04-01 Nikon Corporation A stage apparatus

Also Published As

Publication number Publication date
US9097991B2 (en) 2015-08-04
JP5984459B2 (ja) 2016-09-06
US20130258308A1 (en) 2013-10-03
CN103365115A (zh) 2013-10-23
KR101599577B1 (ko) 2016-03-03
KR20130111423A (ko) 2013-10-10
JP2013211488A (ja) 2013-10-10

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