KR101599571B1 - 감광성 수지 조성물 및 이것을 사용한 물품 및 네가티브형 패턴 형성 방법 - Google Patents

감광성 수지 조성물 및 이것을 사용한 물품 및 네가티브형 패턴 형성 방법 Download PDF

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KR101599571B1
KR101599571B1 KR1020117007618A KR20117007618A KR101599571B1 KR 101599571 B1 KR101599571 B1 KR 101599571B1 KR 1020117007618 A KR1020117007618 A KR 1020117007618A KR 20117007618 A KR20117007618 A KR 20117007618A KR 101599571 B1 KR101599571 B1 KR 101599571B1
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South Korea
Prior art keywords
resin composition
photosensitive resin
carbon atoms
group
substituent
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KR1020117007618A
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English (en)
Korean (ko)
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KR20110059867A (ko
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슌지 후꾸다
？지 후꾸다
가쯔야 사까요리
마미 가따야마
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다이니폰 인사츠 가부시키가이샤
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Publication of KR20110059867A publication Critical patent/KR20110059867A/ko
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D295/00—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
    • C07D295/16—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms acylated on ring nitrogen atoms
    • C07D295/20—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms acylated on ring nitrogen atoms by radicals derived from carbonic acid, or sulfur or nitrogen analogues thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C271/00—Derivatives of carbamic acids, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C271/06—Esters of carbamic acids
    • C07C271/08—Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms
    • C07C271/24—Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atom of at least one of the carbamate groups bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/44—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D317/46—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with one six-membered ring
    • C07D317/48—Methylenedioxybenzenes or hydrogenated methylenedioxybenzenes, unsubstituted on the hetero ring
    • C07D317/50—Methylenedioxybenzenes or hydrogenated methylenedioxybenzenes, unsubstituted on the hetero ring with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to atoms of the carbocyclic ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020117007618A 2008-10-02 2009-10-01 감광성 수지 조성물 및 이것을 사용한 물품 및 네가티브형 패턴 형성 방법 KR101599571B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-257633 2008-10-02
JP2008257633 2008-10-02

Publications (2)

Publication Number Publication Date
KR20110059867A KR20110059867A (ko) 2011-06-07
KR101599571B1 true KR101599571B1 (ko) 2016-03-03

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KR1020117007618A KR101599571B1 (ko) 2008-10-02 2009-10-01 감광성 수지 조성물 및 이것을 사용한 물품 및 네가티브형 패턴 형성 방법

Country Status (4)

Country Link
JP (1) JP5333452B2 (zh)
KR (1) KR101599571B1 (zh)
CN (1) CN102171612B (zh)
WO (1) WO2010038837A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101981579B1 (ko) * 2012-12-10 2019-05-23 엘지디스플레이 주식회사 표시장치용 감광성 조성물, 이를 포함하는 블랙 매트릭스 및 블랙 매트릭스의 패턴 형성 방법
CN105739239B (zh) * 2014-12-10 2020-04-03 太阳油墨（苏州）有限公司 光固化性热固化性树脂组合物、干膜、固化物、及印刷电路板
JP6538509B2 (ja) * 2015-01-13 2019-07-03 太陽ホールディングス株式会社 感光性樹脂組成物、そのドライフィルム及び硬化物、硬化物を含む電子部品又は光学製品、並びに感光性樹脂組成物を含む接着剤
CN108126534B (zh) * 2017-12-28 2020-12-11 三明学院 Apts改性炭黑填充pim-1复合膜及制备方法、分离纯化正丁醇方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623870A (en) 1969-07-22 1971-11-30 Bell Telephone Labor Inc Technique for the preparation of thermally stable photoresist
JPS5146159A (ja) 1974-10-17 1976-04-20 Matsushita Electric Ind Co Ltd Nenpikei
JPS5952822B2 (ja) 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
JPS5839437B2 (ja) 1978-08-24 1983-08-30 岩崎通信機株式会社 ボタン電話装置における本電話機接続方式
US5206117A (en) * 1991-08-14 1993-04-27 Labadie Jeffrey W Photosensitive polyamic alkyl ester composition and process for its use
JP3363580B2 (ja) * 1993-04-28 2003-01-08 日立化成工業株式会社 感光性樹脂組成物及びレリーフパターンの製造法
JPH06345711A (ja) 1993-06-03 1994-12-20 Aibaitsu Kk ［［（２−ニトロ−４，５−ジメトキシベンジル）オキシ］カルボニル］シクロヘキシルアミンおよびその利用方法
JP3279005B2 (ja) * 1993-10-18 2002-04-30 東レ株式会社 化学線感応性重合体組成物
JPH0895246A (ja) * 1994-09-29 1996-04-12 Nitto Denko Corp 耐熱性フォトレジスト組成物および感光性基材、ならびにネガパターン形成方法
JPH08146608A (ja) * 1994-11-16 1996-06-07 Hitachi Ltd 感光性樹脂組成物とそれを用いた電子装置の製法
JPH08146599A (ja) * 1994-11-24 1996-06-07 Nec Corp 感光性組成物とこれを用いた微細パターン形成方法
JP2006189591A (ja) * 2005-01-05 2006-07-20 Tokyo Institute Of Technology 感光性樹脂組成物、レリーフパターンの製造方法及び半導体装置
JP2006257248A (ja) * 2005-03-17 2006-09-28 Fuji Photo Film Co Ltd インク組成物、インクジェット記録方法、印刷物、平版印刷版の製造方法及び平版印刷版
JP4699140B2 (ja) * 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
JP5386789B2 (ja) * 2007-03-29 2014-01-15 大日本印刷株式会社 光塩基発生剤、感光性樹脂組成物、及びネガ型パターン形成方法
JP5197148B2 (ja) * 2008-05-16 2013-05-15 キヤノン株式会社 トナー

Also Published As

Publication number Publication date
WO2010038837A1 (ja) 2010-04-08
JPWO2010038837A1 (ja) 2012-03-01
JP5333452B2 (ja) 2013-11-06
CN102171612B (zh) 2014-07-23
CN102171612A (zh) 2011-08-31
KR20110059867A (ko) 2011-06-07

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