KR101583498B1 - Mems 장치의 패키징 호환성 웨이퍼 레벨 캡핑 - Google Patents

Mems 장치의 패키징 호환성 웨이퍼 레벨 캡핑 Download PDF

Info

Publication number
KR101583498B1
KR101583498B1 KR1020147018512A KR20147018512A KR101583498B1 KR 101583498 B1 KR101583498 B1 KR 101583498B1 KR 1020147018512 A KR1020147018512 A KR 1020147018512A KR 20147018512 A KR20147018512 A KR 20147018512A KR 101583498 B1 KR101583498 B1 KR 101583498B1
Authority
KR
South Korea
Prior art keywords
cavity
sacrificial layer
overcoat
layer
sacrificial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020147018512A
Other languages
English (en)
Korean (ko)
Other versions
KR20140126696A (ko
Inventor
폴 에이. 콜
라자쉬 사하
네이던 프리츠
Original Assignee
조지아 테크 리서치 코오포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 조지아 테크 리서치 코오포레이션 filed Critical 조지아 테크 리서치 코오포레이션
Publication of KR20140126696A publication Critical patent/KR20140126696A/ko
Application granted granted Critical
Publication of KR101583498B1 publication Critical patent/KR101583498B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0154—Moulding a cap over the MEMS device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
KR1020147018512A 2011-12-07 2012-12-06 Mems 장치의 패키징 호환성 웨이퍼 레벨 캡핑 Expired - Fee Related KR101583498B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161567877P 2011-12-07 2011-12-07
US61/567,877 2011-12-07
PCT/US2012/068092 WO2013086083A1 (en) 2011-12-07 2012-12-06 Packaging compatible wafer level capping of mems devices

Publications (2)

Publication Number Publication Date
KR20140126696A KR20140126696A (ko) 2014-10-31
KR101583498B1 true KR101583498B1 (ko) 2016-01-08

Family

ID=47505302

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147018512A Expired - Fee Related KR101583498B1 (ko) 2011-12-07 2012-12-06 Mems 장치의 패키징 호환성 웨이퍼 레벨 캡핑

Country Status (8)

Country Link
US (1) US8765512B2 (enExample)
EP (1) EP2788280B1 (enExample)
JP (1) JP6063475B2 (enExample)
KR (1) KR101583498B1 (enExample)
CN (1) CN104093662B (enExample)
SG (1) SG11201402261SA (enExample)
TW (1) TWI600609B (enExample)
WO (1) WO2013086083A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9416003B2 (en) * 2014-02-24 2016-08-16 Freescale Semiconductor, Inc. Semiconductor die with high pressure cavity
KR102353651B1 (ko) * 2014-03-24 2022-01-21 인텔 코포레이션 반도체 다이 내에 스루 바디 비아 및 스루 바디 비아를 포함하는 집적회로를 형성하는 방법
JP6469960B2 (ja) * 2014-03-31 2019-02-13 住友精化株式会社 ポジ型フォトレジスト
TWI590735B (zh) 2014-12-15 2017-07-01 財團法人工業技術研究院 訊號傳輸板及其製作方法
JP2016163917A (ja) * 2015-03-06 2016-09-08 株式会社東芝 Ｍｅｍｓ装置
CN104985241B (zh) * 2015-05-16 2017-04-05 哈尔滨工业大学 一种基于压电陶瓷片逆压电效应的一维振动装置
TWI576026B (zh) 2015-07-17 2017-03-21 財團法人工業技術研究院 電路結構
US9845235B2 (en) * 2015-09-03 2017-12-19 General Electric Company Refractory seed metal for electroplated MEMS structures
DE112015007070T5 (de) * 2015-10-29 2018-09-13 Intel Corporation Metallfreie Rahmengestaltung für Siliziumbrücken für Halbleitergehäuse
WO2017078716A1 (en) 2015-11-05 2017-05-11 Hewlett-Packard Development Company, L.P. Three-dimensional features formed in molded panel
WO2017094176A1 (ja) * 2015-12-04 2017-06-08 株式会社日立製作所 断面観察試料作製装置及び断面観察試料作製方法
JP2017208417A (ja) * 2016-05-17 2017-11-24 住友ベークライト株式会社 中空構造体の製造方法
KR102512186B1 (ko) 2016-12-22 2023-03-20 일루미나, 인코포레이티드 수지 필름 및 패턴화된 중합체층을 포함하는 어레이
CN106788306A (zh) * 2017-03-07 2017-05-31 杭州左蓝微电子技术有限公司 一种薄膜体声波谐振器及其制备方法
KR102369434B1 (ko) 2017-04-19 2022-03-03 삼성전기주식회사 체적 음향 공진기 및 이의 제조방법
US11235328B2 (en) * 2017-04-21 2022-02-01 Hewlett-Packard Development Company, L.P. Coplanar microfluidic manipulation
US10269587B2 (en) 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit packages and methods of forming same
US10584027B2 (en) * 2017-12-01 2020-03-10 Elbit Systems Of America, Llc Method for forming hermetic seals in MEMS devices
JP7164773B2 (ja) * 2018-03-02 2022-11-02 東京エレクトロン株式会社 パターンを層に転写する方法
KR20190111743A (ko) * 2018-03-22 2019-10-02 스미토모 세이카 가부시키가이샤 복합부재 및 그 제조방법
CN108507558B (zh) * 2018-03-28 2024-04-30 株洲菲斯罗克光电科技股份有限公司 一种轻量化三轴一体光纤陀螺仪
CN108878370A (zh) * 2018-06-27 2018-11-23 深圳市华星光电技术有限公司 一种透明导电电极及其制备方法、显示装置
US20200115224A1 (en) 2018-10-12 2020-04-16 Stmicroelectronics S.R.L. Mems device having a rugged package and fabrication process thereof
CN111039254A (zh) * 2018-10-15 2020-04-21 无锡华润上华科技有限公司 Mems样品纵向截面的制备方法及形貌观察方法
CN114477073B (zh) * 2021-12-08 2024-05-03 江苏普诺威电子股份有限公司 改善mems载板边缘掉屑的制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006088268A (ja) 2004-09-24 2006-04-06 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
JP2007529333A (ja) 2004-03-15 2007-10-25 ジョージア テック リサーチ コーポレイション 微小電気機械システム用のパッケージングおよびその製造方法
US20090075431A1 (en) 2006-08-02 2009-03-19 Skyworks Solutions, Inc. Wafer level package with cavities for active devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183916A1 (en) * 2002-03-27 2003-10-02 John Heck Packaging microelectromechanical systems
EP1567580A4 (en) 2002-11-01 2008-04-30 Georgia Tech Res Inst OCCUPANCY COMPOSITIONS, METHOD FOR THEIR USE AND METHOD FOR THE DISASSEMBLY OF THE SAME
CN101283042A (zh) * 2005-08-09 2008-10-08 查珀尔希尔北卡罗来纳大学 制造微流体器件的方法和材料
JP5110575B2 (ja) * 2007-08-24 2012-12-26 エムテックスマツムラ株式会社 中空パッケージ及び半導体装置
CN101554987B (zh) * 2009-04-30 2011-04-20 华中科技大学 一种微机电系统的圆片级真空封装工艺
CN102001616A (zh) * 2009-08-31 2011-04-06 上海丽恒光微电子科技有限公司 装配和封装微型机电系统装置的方法
JP2011142229A (ja) * 2010-01-07 2011-07-21 Toyota Motor Corp 電子部品用パッケージ、電子部品装置、及び電子部品装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007529333A (ja) 2004-03-15 2007-10-25 ジョージア テック リサーチ コーポレイション 微小電気機械システム用のパッケージングおよびその製造方法
JP2006088268A (ja) 2004-09-24 2006-04-06 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
US20090075431A1 (en) 2006-08-02 2009-03-19 Skyworks Solutions, Inc. Wafer level package with cavities for active devices

Also Published As

Publication number Publication date
US8765512B2 (en) 2014-07-01
EP2788280A1 (en) 2014-10-15
TW201336775A (zh) 2013-09-16
CN104093662A (zh) 2014-10-08
KR20140126696A (ko) 2014-10-31
WO2013086083A1 (en) 2013-06-13
EP2788280B1 (en) 2018-06-20
CN104093662B (zh) 2015-11-25
JP2015501734A (ja) 2015-01-19
JP6063475B2 (ja) 2017-01-18
US20130341736A1 (en) 2013-12-26
SG11201402261SA (en) 2014-08-28
TWI600609B (zh) 2017-10-01

Similar Documents

Publication Publication Date Title
KR101583498B1 (ko) Mems 장치의 패키징 호환성 웨이퍼 레벨 캡핑
US8405170B2 (en) Packaging for micro electro-mechanical systems and methods of fabricating thereof
EP2082422B1 (en) Formation of through-wafer electrical interconnections using an etch stop layer
CN101849289A (zh) 制备三层梁的方法和设备
US20110127650A1 (en) Method of Manufacturing a Semiconductor Device and Semiconductor Devices Resulting Therefrom
CN103502139B (zh) 气态化学品向形成于中间介质层中的腔体内的注入以用于之后的热扩散释放
Saha et al. Packaging-compatible wafer level capping of MEMS devices
CN101434375B (zh) 半导体微机电结构的制造方法
US20070298532A1 (en) Micro-Electro-mechanical (MEMS) encapsulation using buried porous silicon
US9505612B2 (en) Method for thin film encapsulation (TFE) of a microelectromechanical system (MEMS) device and the MEMS device encapsulated thereof
US10804103B2 (en) Microassembly of heterogeneous materials
Messana et al. Packaging of large lateral deflection MEMS using a combination of fusion bonding and epitaxial reactor sealing
Lee et al. Cavity-enhanced sacrificial layer micromachining for faster release of thin film encapsulated MEMS
Graham Methods for the wafer-scale encapsulation of MEMS
Uzunlar et al. Low-cost MEMS packaging using polymer-based air-gaps
Reuter et al. Thin filmencapsulation of microstructures using sacrificial CF-polymer
CN101633490B (zh) 具有微帽盖的元件、模组及其晶圆级封装方法
US9458010B1 (en) Systems and methods for anchoring components in MEMS semiconductor devices
Saha et al. Three dimensional air-gap structures for MEMS packaging
Lee et al. Air-gap in encapsulation for fast release and safe sealing
HK1137565B (en) Formation of through-wafer electrical interconnections using an etch stop layer

Legal Events

Date Code Title Description
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190105

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190105