CN104093662B - Mems器件的封装相容晶片级封盖 - Google Patents

Mems器件的封装相容晶片级封盖 Download PDF

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Publication number
CN104093662B
CN104093662B CN201280060077.7A CN201280060077A CN104093662B CN 104093662 B CN104093662 B CN 104093662B CN 201280060077 A CN201280060077 A CN 201280060077A CN 104093662 B CN104093662 B CN 104093662B
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China
Prior art keywords
sacrifice layer
chamber
molding
external coating
decomposition
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Expired - Fee Related
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CN201280060077.7A
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English (en)
Chinese (zh)
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CN104093662A (zh
Inventor
P·A·科尔
R·萨哈
N·弗里兹
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Georgia Tech Research Institute
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Georgia Tech Research Institute
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0154—Moulding a cap over the MEMS device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
CN201280060077.7A 2011-12-07 2012-12-06 Mems器件的封装相容晶片级封盖 Expired - Fee Related CN104093662B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161567877P 2011-12-07 2011-12-07
US61/567,877 2011-12-07
PCT/US2012/068092 WO2013086083A1 (en) 2011-12-07 2012-12-06 Packaging compatible wafer level capping of mems devices

Publications (2)

Publication Number Publication Date
CN104093662A CN104093662A (zh) 2014-10-08
CN104093662B true CN104093662B (zh) 2015-11-25

Family

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Family Applications (1)

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CN201280060077.7A Expired - Fee Related CN104093662B (zh) 2011-12-07 2012-12-06 Mems器件的封装相容晶片级封盖

Country Status (8)

Country Link
US (1) US8765512B2 (enExample)
EP (1) EP2788280B1 (enExample)
JP (1) JP6063475B2 (enExample)
KR (1) KR101583498B1 (enExample)
CN (1) CN104093662B (enExample)
SG (1) SG11201402261SA (enExample)
TW (1) TWI600609B (enExample)
WO (1) WO2013086083A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9416003B2 (en) * 2014-02-24 2016-08-16 Freescale Semiconductor, Inc. Semiconductor die with high pressure cavity
KR102353651B1 (ko) * 2014-03-24 2022-01-21 인텔 코포레이션 반도체 다이 내에 스루 바디 비아 및 스루 바디 비아를 포함하는 집적회로를 형성하는 방법
JP6469960B2 (ja) * 2014-03-31 2019-02-13 住友精化株式会社 ポジ型フォトレジスト
TWI590735B (zh) 2014-12-15 2017-07-01 財團法人工業技術研究院 訊號傳輸板及其製作方法
JP2016163917A (ja) * 2015-03-06 2016-09-08 株式会社東芝 Ｍｅｍｓ装置
CN104985241B (zh) * 2015-05-16 2017-04-05 哈尔滨工业大学 一种基于压电陶瓷片逆压电效应的一维振动装置
TWI576026B (zh) 2015-07-17 2017-03-21 財團法人工業技術研究院 電路結構
US9845235B2 (en) * 2015-09-03 2017-12-19 General Electric Company Refractory seed metal for electroplated MEMS structures
DE112015007070T5 (de) * 2015-10-29 2018-09-13 Intel Corporation Metallfreie Rahmengestaltung für Siliziumbrücken für Halbleitergehäuse
WO2017078716A1 (en) 2015-11-05 2017-05-11 Hewlett-Packard Development Company, L.P. Three-dimensional features formed in molded panel
WO2017094176A1 (ja) * 2015-12-04 2017-06-08 株式会社日立製作所 断面観察試料作製装置及び断面観察試料作製方法
JP2017208417A (ja) * 2016-05-17 2017-11-24 住友ベークライト株式会社 中空構造体の製造方法
KR102512186B1 (ko) 2016-12-22 2023-03-20 일루미나, 인코포레이티드 수지 필름 및 패턴화된 중합체층을 포함하는 어레이
CN106788306A (zh) * 2017-03-07 2017-05-31 杭州左蓝微电子技术有限公司 一种薄膜体声波谐振器及其制备方法
KR102369434B1 (ko) 2017-04-19 2022-03-03 삼성전기주식회사 체적 음향 공진기 및 이의 제조방법
US11235328B2 (en) * 2017-04-21 2022-02-01 Hewlett-Packard Development Company, L.P. Coplanar microfluidic manipulation
US10269587B2 (en) 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit packages and methods of forming same
US10584027B2 (en) * 2017-12-01 2020-03-10 Elbit Systems Of America, Llc Method for forming hermetic seals in MEMS devices
JP7164773B2 (ja) * 2018-03-02 2022-11-02 東京エレクトロン株式会社 パターンを層に転写する方法
KR20190111743A (ko) * 2018-03-22 2019-10-02 스미토모 세이카 가부시키가이샤 복합부재 및 그 제조방법
CN108507558B (zh) * 2018-03-28 2024-04-30 株洲菲斯罗克光电科技股份有限公司 一种轻量化三轴一体光纤陀螺仪
CN108878370A (zh) * 2018-06-27 2018-11-23 深圳市华星光电技术有限公司 一种透明导电电极及其制备方法、显示装置
US20200115224A1 (en) 2018-10-12 2020-04-16 Stmicroelectronics S.R.L. Mems device having a rugged package and fabrication process thereof
CN111039254A (zh) * 2018-10-15 2020-04-21 无锡华润上华科技有限公司 Mems样品纵向截面的制备方法及形貌观察方法
CN114477073B (zh) * 2021-12-08 2024-05-03 江苏普诺威电子股份有限公司 改善mems载板边缘掉屑的制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200304691A (en) * 2002-03-27 2003-10-01 Intel Corp Packaging microelectromechanical systems
CN101094804A (zh) * 2004-03-15 2007-12-26 佐治亚技术研究公司 微机电系统封装件及其制造方法
CN101283042A (zh) * 2005-08-09 2008-10-08 查珀尔希尔北卡罗来纳大学 制造微流体器件的方法和材料
CN101554987A (zh) * 2009-04-30 2009-10-14 华中科技大学 一种微机电系统的圆片级真空封装工艺
CN102001616A (zh) * 2009-08-31 2011-04-06 上海丽恒光微电子科技有限公司 装配和封装微型机电系统装置的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1567580A4 (en) 2002-11-01 2008-04-30 Georgia Tech Res Inst OCCUPANCY COMPOSITIONS, METHOD FOR THEIR USE AND METHOD FOR THE DISASSEMBLY OF THE SAME
JP4426413B2 (ja) 2004-09-24 2010-03-03 日本電信電話株式会社 半導体装置の製造方法
US7635606B2 (en) 2006-08-02 2009-12-22 Skyworks Solutions, Inc. Wafer level package with cavities for active devices
JP5110575B2 (ja) * 2007-08-24 2012-12-26 エムテックスマツムラ株式会社 中空パッケージ及び半導体装置
JP2011142229A (ja) * 2010-01-07 2011-07-21 Toyota Motor Corp 電子部品用パッケージ、電子部品装置、及び電子部品装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200304691A (en) * 2002-03-27 2003-10-01 Intel Corp Packaging microelectromechanical systems
CN101094804A (zh) * 2004-03-15 2007-12-26 佐治亚技术研究公司 微机电系统封装件及其制造方法
CN101283042A (zh) * 2005-08-09 2008-10-08 查珀尔希尔北卡罗来纳大学 制造微流体器件的方法和材料
CN101554987A (zh) * 2009-04-30 2009-10-14 华中科技大学 一种微机电系统的圆片级真空封装工艺
CN102001616A (zh) * 2009-08-31 2011-04-06 上海丽恒光微电子科技有限公司 装配和封装微型机电系统装置的方法

Also Published As

Publication number Publication date
US8765512B2 (en) 2014-07-01
EP2788280A1 (en) 2014-10-15
TW201336775A (zh) 2013-09-16
CN104093662A (zh) 2014-10-08
KR20140126696A (ko) 2014-10-31
KR101583498B1 (ko) 2016-01-08
WO2013086083A1 (en) 2013-06-13
EP2788280B1 (en) 2018-06-20
JP2015501734A (ja) 2015-01-19
JP6063475B2 (ja) 2017-01-18
US20130341736A1 (en) 2013-12-26
SG11201402261SA (en) 2014-08-28
TWI600609B (zh) 2017-10-01

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