KR101568460B1 - 현상 처리 방법 - Google Patents

현상 처리 방법 Download PDF

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Publication number
KR101568460B1
KR101568460B1 KR1020127006391A KR20127006391A KR101568460B1 KR 101568460 B1 KR101568460 B1 KR 101568460B1 KR 1020127006391 A KR1020127006391 A KR 1020127006391A KR 20127006391 A KR20127006391 A KR 20127006391A KR 101568460 B1 KR101568460 B1 KR 101568460B1
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KR
South Korea
Prior art keywords
substrate
liquid
wafer
supplying
rotation speed
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KR1020127006391A
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English (en)
Korean (ko)
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KR20120080172A (ko
Inventor
유이치로 이나토미
미츠아키 이와시타
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20120080172A publication Critical patent/KR20120080172A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020127006391A 2009-10-02 2010-08-20 현상 처리 방법 Active KR101568460B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-230642 2009-10-02
JP2009230642A JP5437763B2 (ja) 2009-10-02 2009-10-02 現像処理方法及び基板処理方法

Publications (2)

Publication Number Publication Date
KR20120080172A KR20120080172A (ko) 2012-07-16
KR101568460B1 true KR101568460B1 (ko) 2015-11-11

Family

ID=43825974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127006391A Active KR101568460B1 (ko) 2009-10-02 2010-08-20 현상 처리 방법

Country Status (5)

Country Link
US (1) US8691497B2 (enExample)
JP (1) JP5437763B2 (enExample)
KR (1) KR101568460B1 (enExample)
TW (1) TWI459159B (enExample)
WO (1) WO2011040140A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101266620B1 (ko) 2010-08-20 2013-05-22 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 기판처리장치
JP5816488B2 (ja) * 2011-08-26 2015-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5979700B2 (ja) 2011-09-28 2016-08-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP5632860B2 (ja) * 2012-01-05 2014-11-26 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及び基板洗浄用記憶媒体
US9048089B2 (en) * 2013-02-08 2015-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus to improve internal wafer temperature profile
JP6111104B2 (ja) * 2013-03-15 2017-04-05 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ 基板洗浄乾燥方法および基板現像方法
JP6256828B2 (ja) 2013-10-10 2018-01-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6685791B2 (ja) * 2016-03-25 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6998448B2 (ja) * 2018-02-27 2022-01-18 京セラ株式会社 プリプレグおよび回路基板用積層板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340491A (ja) * 1999-05-28 2000-12-08 Dainippon Screen Mfg Co Ltd 回転式基板処理装置及び回転式基板処理方法
JP2003178944A (ja) * 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142349A (ja) * 1993-11-16 1995-06-02 Mitsubishi Electric Corp 現像工程におけるフォトレジストパターンの倒れを防止する方法
DE9414040U1 (de) * 1994-08-30 1995-01-19 Hoechst Ag, 65929 Frankfurt Vliese aus Elektretfasermischungen mit verbesserter Ladungsstabilität
JP2003109897A (ja) * 2001-07-26 2003-04-11 Tokyo Electron Ltd 現像処理方法および現像処理装置
JP2003178943A (ja) 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置
US7811748B2 (en) * 2004-04-23 2010-10-12 Tokyo Ohka Kogyo Co., Ltd. Resist pattern forming method and composite rinse agent
JP4442324B2 (ja) * 2004-05-28 2010-03-31 旭硝子株式会社 溶剤組成物、およびレジストの現像方法
US20080008973A1 (en) * 2006-07-10 2008-01-10 Tomohiro Goto Substrate processing method and substrate processing apparatus
JP2009016657A (ja) * 2007-07-06 2009-01-22 Tokyo Electron Ltd レジストパターンの再形成方法
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340491A (ja) * 1999-05-28 2000-12-08 Dainippon Screen Mfg Co Ltd 回転式基板処理装置及び回転式基板処理方法
JP2003178944A (ja) * 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置

Also Published As

Publication number Publication date
JP5437763B2 (ja) 2014-03-12
WO2011040140A1 (ja) 2011-04-07
JP2011082200A (ja) 2011-04-21
TWI459159B (zh) 2014-11-01
US8691497B2 (en) 2014-04-08
TW201120584A (en) 2011-06-16
KR20120080172A (ko) 2012-07-16
US20120183909A1 (en) 2012-07-19

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