JP5437763B2 - 現像処理方法及び基板処理方法 - Google Patents

現像処理方法及び基板処理方法 Download PDF

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Publication number
JP5437763B2
JP5437763B2 JP2009230642A JP2009230642A JP5437763B2 JP 5437763 B2 JP5437763 B2 JP 5437763B2 JP 2009230642 A JP2009230642 A JP 2009230642A JP 2009230642 A JP2009230642 A JP 2009230642A JP 5437763 B2 JP5437763 B2 JP 5437763B2
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Japan
Prior art keywords
substrate
liquid
processing
wafer
rotational speed
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JP2009230642A
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English (en)
Japanese (ja)
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JP2011082200A5 (enExample
JP2011082200A (ja
Inventor
裕一郎 稲富
光秋 岩下
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009230642A priority Critical patent/JP5437763B2/ja
Priority to TW099123301A priority patent/TWI459159B/zh
Priority to US13/499,362 priority patent/US8691497B2/en
Priority to KR1020127006391A priority patent/KR101568460B1/ko
Priority to PCT/JP2010/064038 priority patent/WO2011040140A1/ja
Publication of JP2011082200A publication Critical patent/JP2011082200A/ja
Publication of JP2011082200A5 publication Critical patent/JP2011082200A5/ja
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Publication of JP5437763B2 publication Critical patent/JP5437763B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • H10P76/204—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H10P72/0448—

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2009230642A 2009-10-02 2009-10-02 現像処理方法及び基板処理方法 Active JP5437763B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009230642A JP5437763B2 (ja) 2009-10-02 2009-10-02 現像処理方法及び基板処理方法
TW099123301A TWI459159B (zh) 2009-10-02 2010-07-15 顯影處理方法及基板處理方法
US13/499,362 US8691497B2 (en) 2009-10-02 2010-08-20 Developing treatment method
KR1020127006391A KR101568460B1 (ko) 2009-10-02 2010-08-20 현상 처리 방법
PCT/JP2010/064038 WO2011040140A1 (ja) 2009-10-02 2010-08-20 現像処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009230642A JP5437763B2 (ja) 2009-10-02 2009-10-02 現像処理方法及び基板処理方法

Publications (3)

Publication Number Publication Date
JP2011082200A JP2011082200A (ja) 2011-04-21
JP2011082200A5 JP2011082200A5 (enExample) 2011-10-06
JP5437763B2 true JP5437763B2 (ja) 2014-03-12

Family

ID=43825974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009230642A Active JP5437763B2 (ja) 2009-10-02 2009-10-02 現像処理方法及び基板処理方法

Country Status (5)

Country Link
US (1) US8691497B2 (enExample)
JP (1) JP5437763B2 (enExample)
KR (1) KR101568460B1 (enExample)
TW (1) TWI459159B (enExample)
WO (1) WO2011040140A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101266620B1 (ko) 2010-08-20 2013-05-22 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 기판처리장치
JP5816488B2 (ja) * 2011-08-26 2015-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5979700B2 (ja) * 2011-09-28 2016-08-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP5632860B2 (ja) * 2012-01-05 2014-11-26 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及び基板洗浄用記憶媒体
US9048089B2 (en) * 2013-02-08 2015-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus to improve internal wafer temperature profile
JP6111104B2 (ja) * 2013-03-15 2017-04-05 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ 基板洗浄乾燥方法および基板現像方法
JP6256828B2 (ja) 2013-10-10 2018-01-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6685791B2 (ja) * 2016-03-25 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
CN111819227B (zh) * 2018-02-27 2023-04-04 京瓷株式会社 预浸渍体和电路基板用层叠板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142349A (ja) * 1993-11-16 1995-06-02 Mitsubishi Electric Corp 現像工程におけるフォトレジストパターンの倒れを防止する方法
DE9414040U1 (de) * 1994-08-30 1995-01-19 Hoechst Ag, 65929 Frankfurt Vliese aus Elektretfasermischungen mit verbesserter Ladungsstabilität
JP3618256B2 (ja) * 1999-05-28 2005-02-09 大日本スクリーン製造株式会社 回転式基板処理装置及び回転式基板処理方法
JP2003109897A (ja) * 2001-07-26 2003-04-11 Tokyo Electron Ltd 現像処理方法および現像処理装置
JP2003178943A (ja) 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP2003178944A (ja) * 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置
WO2005103832A1 (ja) * 2004-04-23 2005-11-03 Tokyo Ohka Kogyo Co., Ltd. レジストパターン形成方法及び複合リンス液
JP4442324B2 (ja) * 2004-05-28 2010-03-31 旭硝子株式会社 溶剤組成物、およびレジストの現像方法
US20080008973A1 (en) * 2006-07-10 2008-01-10 Tomohiro Goto Substrate processing method and substrate processing apparatus
JP2009016657A (ja) * 2007-07-06 2009-01-22 Tokyo Electron Ltd レジストパターンの再形成方法
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern

Also Published As

Publication number Publication date
KR20120080172A (ko) 2012-07-16
US20120183909A1 (en) 2012-07-19
JP2011082200A (ja) 2011-04-21
WO2011040140A1 (ja) 2011-04-07
TWI459159B (zh) 2014-11-01
US8691497B2 (en) 2014-04-08
TW201120584A (en) 2011-06-16
KR101568460B1 (ko) 2015-11-11

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