KR101530760B1 - 노광 장치 및 디바이스 제조 방법 - Google Patents

노광 장치 및 디바이스 제조 방법 Download PDF

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Publication number
KR101530760B1
KR101530760B1 KR1020120106211A KR20120106211A KR101530760B1 KR 101530760 B1 KR101530760 B1 KR 101530760B1 KR 1020120106211 A KR1020120106211 A KR 1020120106211A KR 20120106211 A KR20120106211 A KR 20120106211A KR 101530760 B1 KR101530760 B1 KR 101530760B1
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South Korea
Prior art keywords
substrate
light
optical system
center
plate
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KR1020120106211A
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English (en)
Korean (ko)
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KR20130033320A (ko
Inventor
신이치 히라노
료타 마키노
Original Assignee
캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020120106211A 2011-09-26 2012-09-25 노광 장치 및 디바이스 제조 방법 Active KR101530760B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-209100 2011-09-26
JP2011209100A JP5868094B2 (ja) 2011-09-26 2011-09-26 露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
KR20130033320A KR20130033320A (ko) 2013-04-03
KR101530760B1 true KR101530760B1 (ko) 2015-06-22

Family

ID=47910962

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120106211A Active KR101530760B1 (ko) 2011-09-26 2012-09-25 노광 장치 및 디바이스 제조 방법

Country Status (4)

Country Link
US (1) US8625073B2 (enExample)
JP (1) JP5868094B2 (enExample)
KR (1) KR101530760B1 (enExample)
TW (1) TWI470377B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5127875B2 (ja) * 2010-04-28 2013-01-23 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
JP6288985B2 (ja) * 2013-08-13 2018-03-07 キヤノン株式会社 リソグラフィ装置、および物品の製造方法
DE102014202755A1 (de) * 2014-02-14 2015-08-20 Carl Zeiss Smt Gmbh Verfahren zur Verlagerung mindestens eines optischen Bauelements
JP6970548B2 (ja) * 2016-09-09 2021-11-24 キヤノン株式会社 照明光学系、露光装置、及び物品製造方法
JP7145620B2 (ja) * 2018-02-27 2022-10-03 株式会社オーク製作所 投影露光装置
JP7162430B2 (ja) * 2018-02-27 2022-10-28 株式会社オーク製作所 投影露光装置
JP7179420B2 (ja) * 2019-01-29 2022-11-29 株式会社オーク製作所 投影露光装置及び投影露光装置に使用する遮光板
CN110360934A (zh) * 2019-07-15 2019-10-22 北海市龙浩光电科技有限公司 一种测量弧面玻璃盖板的方法
CN113433799B (zh) * 2020-03-23 2023-01-20 长鑫存储技术有限公司 晶圆边缘曝光方法、晶圆边缘曝光装置及掩膜板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269122A (ja) * 1999-03-18 2000-09-29 Hiroshima Nippon Denki Kk ダミーパターン形成方法及び半導体製造方法
JP2002372735A (ja) * 2001-06-14 2002-12-26 Canon Inc 光学絞り装置、露光装置、露光方法、デバイス製造方法及びデバイス
JP2005045160A (ja) * 2003-07-25 2005-02-17 Matsushita Electric Ind Co Ltd 露光方法
JP2005286062A (ja) * 2004-03-29 2005-10-13 Canon Inc 加工装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6967710B2 (en) * 1990-11-15 2005-11-22 Nikon Corporation Projection exposure apparatus and method
US6680774B1 (en) * 2001-10-09 2004-01-20 Ultratech Stepper, Inc. Method and apparatus for mechanically masking a workpiece
JP2003158067A (ja) * 2001-11-22 2003-05-30 Hitachi Ltd 半導体装置の製造方法および露光装置
JP2006040915A (ja) * 2004-07-22 2006-02-09 Seiko Epson Corp 半導体装置の製造方法、及びその製造装置、並びに電気光学装置の製造方法
US7936447B2 (en) * 2006-05-08 2011-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008141016A (ja) * 2006-12-01 2008-06-19 Canon Inc シャッタ羽根装置、シャッタユニット、撮像装置、露光装置およびデバイス製造方法
JP5196775B2 (ja) * 2006-12-07 2013-05-15 キヤノン株式会社 露光装置及びデバイス製造方法
US7777863B2 (en) * 2007-05-30 2010-08-17 Asml Netherlands B.V. Lithographic apparatus with mask to prevent exposure of peripheral exposure region of substrate
JP2009239018A (ja) * 2008-03-27 2009-10-15 Orc Mfg Co Ltd 投影露光装置
JP5127875B2 (ja) * 2010-04-28 2013-01-23 キヤノン株式会社 リソグラフィ装置及び物品の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269122A (ja) * 1999-03-18 2000-09-29 Hiroshima Nippon Denki Kk ダミーパターン形成方法及び半導体製造方法
JP2002372735A (ja) * 2001-06-14 2002-12-26 Canon Inc 光学絞り装置、露光装置、露光方法、デバイス製造方法及びデバイス
JP2005045160A (ja) * 2003-07-25 2005-02-17 Matsushita Electric Ind Co Ltd 露光方法
JP2005286062A (ja) * 2004-03-29 2005-10-13 Canon Inc 加工装置

Also Published As

Publication number Publication date
TWI470377B (zh) 2015-01-21
JP2013069986A (ja) 2013-04-18
US20130077068A1 (en) 2013-03-28
KR20130033320A (ko) 2013-04-03
JP5868094B2 (ja) 2016-02-24
US8625073B2 (en) 2014-01-07
TW201314383A (zh) 2013-04-01

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