KR101527139B1 - 박막 캡슐 내의 반도체 웨이퍼들의 재결정화 및 관련 공정 - Google Patents

박막 캡슐 내의 반도체 웨이퍼들의 재결정화 및 관련 공정 Download PDF

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KR101527139B1
KR101527139B1 KR1020097026653A KR20097026653A KR101527139B1 KR 101527139 B1 KR101527139 B1 KR 101527139B1 KR 1020097026653 A KR1020097026653 A KR 1020097026653A KR 20097026653 A KR20097026653 A KR 20097026653A KR 101527139 B1 KR101527139 B1 KR 101527139B1
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wafer
capsule
recrystallization
semiconductor wafer
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KR20100038306A (ko
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에마뉴엘 엠. 삭스
제임스 지. 세르디
에릭 티. 한티수
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메사추세츠 인스티튜트 오브 테크놀로지
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
KR1020097026653A 2007-06-26 2008-06-26 박막 캡슐 내의 반도체 웨이퍼들의 재결정화 및 관련 공정 Expired - Fee Related KR101527139B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US93712907P 2007-06-26 2007-06-26
US60/937,129 2007-06-26
PCT/US2008/008030 WO2009002550A1 (en) 2007-06-26 2008-06-26 Recrystallization of semiconductor wafers in a thin film capsule and related processes

Publications (2)

Publication Number Publication Date
KR20100038306A KR20100038306A (ko) 2010-04-14
KR101527139B1 true KR101527139B1 (ko) 2015-06-08

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US (2) US8633483B2 (https=)
EP (1) EP2168145A4 (https=)
JP (1) JP5591695B2 (https=)
KR (1) KR101527139B1 (https=)
CN (1) CN101790774B (https=)
WO (1) WO2009002550A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100123745A (ko) 2008-02-29 2010-11-24 코닝 인코포레이티드 순수 또는 도핑된 반도체 물질의 비지지 제품을 제조하는 방법
US7771643B1 (en) 2009-02-27 2010-08-10 Corning Incorporated Methods of making an unsupported article of semiconducting material by controlled undercooling
MY160016A (en) * 2009-03-09 2017-02-15 1366 Tech Inc Methods and apparati for making thin semiconductor bodies from molten material
US8540920B2 (en) * 2009-05-14 2013-09-24 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material
FR2948492B1 (fr) * 2009-07-24 2012-03-09 Tile S Recristallisation complete de plaquettes semiconductrices
US8480803B2 (en) 2009-10-30 2013-07-09 Corning Incorporated Method of making an article of semiconducting material
US8591795B2 (en) * 2009-12-04 2013-11-26 Corning Incorporated Method of exocasting an article of semiconducting material
US8242033B2 (en) 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials
EP2619355B1 (en) * 2010-09-23 2015-01-07 Corning Incorporated Technique to modify the microstructure of semiconducting materials
SG190288A1 (en) * 2010-12-01 2013-06-28 1366 Tech Inc Making semiconductor bodies from molten material using a free-standing interposer sheet
US9879357B2 (en) * 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
JP5975785B2 (ja) * 2012-08-14 2016-08-23 株式会社アドテックエンジニアリング 描画装置、露光描画装置、プログラム及び描画方法
CN104047052B (zh) * 2013-03-11 2018-10-19 三菱综合材料株式会社 半导体装置用硅部件及半导体装置用硅部件的制造方法
US9802827B2 (en) 2015-10-09 2017-10-31 Milwaukee Silicon, Llc Purified silicon, devices and systems for producing same
CN114195519A (zh) * 2020-09-17 2022-03-18 山东硅纳新材料科技有限公司 一种先驱体转化碳化硅陶瓷及其制备方法
CN112831185B (zh) * 2021-02-23 2022-09-20 中北大学 梯度导电-均匀导热双功能网络低反射高吸收电磁屏蔽聚合物复合材料

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175513A (ja) * 1985-07-01 1986-04-17 Hitachi Ltd シリコン結晶膜の製造方法
JPS6325209A (ja) * 1986-07-18 1988-02-02 Kawasaki Steel Corp 多結晶シリコンウエハの製造方法
JPH11260721A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 多結晶薄膜シリコン層の形成方法および太陽光発電素子
JP2001516324A (ja) * 1997-03-04 2001-09-25 アストロパワー，インコーポレイテッド 柱状結晶粒状多結晶太陽電池基材及び改良された製造方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1193308A (en) 1916-08-01 Pipe-wbeirch
DE2659436A1 (de) * 1975-12-31 1977-07-07 Motorola Inc Verfahren zum modifizieren einer kristallstruktur einer halbleiterschicht
DE2659397A1 (de) * 1975-12-31 1977-07-14 Motorola Inc Verfahren zum modifizieren einer kristallstruktur eines halbleitermaterials
US4196041A (en) 1976-02-09 1980-04-01 Motorola, Inc. Self-seeding conversion of polycrystalline silicon sheets to macrocrystalline by zone melting
US4315479A (en) * 1980-06-27 1982-02-16 Atomel Corporation Silicon wafer steam oxidizing apparatus
US4461670A (en) * 1982-05-03 1984-07-24 At&T Bell Laboratories Process for producing silicon devices
US4590130A (en) 1984-03-26 1986-05-20 General Electric Company Solid state zone recrystallization of semiconductor material on an insulator
JPS6177513A (ja) 1984-09-26 1986-04-21 Hitachi Ltd 車両用空調装置の給気ダクト
US4602980A (en) * 1984-10-01 1986-07-29 Solavolt International Method for improving crystallinity of semiconductor ribbon
JPS6233418A (ja) * 1985-08-07 1987-02-13 Mitsubishi Electric Corp 帯域溶融型単結晶半導体層形成装置
US5173271A (en) * 1985-12-04 1992-12-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
JPS62285412A (ja) * 1986-06-04 1987-12-11 Hitachi Ltd 半導体基板の製造方法
DE3813737A1 (de) * 1988-04-23 1989-11-02 Fraunhofer Ges Forschung Verfahren zum herstellen von solarzellen sowie spiegelofen zur durchfuehrung des verfahrens
US4944835A (en) 1989-03-30 1990-07-31 Kopin Corporation Seeding process in zone recrystallization
JPH06103732B2 (ja) 1990-05-30 1994-12-14 三菱電機株式会社 半導体装置およびその製造方法
JP2557137B2 (ja) * 1990-08-13 1996-11-27 三菱電機株式会社 半導体製造用加熱装置
JPH04253323A (ja) * 1991-01-29 1992-09-09 Mitsubishi Electric Corp 半導体装置の製造方法
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
JPH06325209A (ja) * 1993-05-14 1994-11-25 Kawasaki Steel Corp 文字読取装置
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
JP3453436B2 (ja) * 1994-09-08 2003-10-06 三菱電機株式会社 半導体層を溶融再結晶化するための装置
KR970013008A (ko) 1995-08-30 1997-03-29 윤덕용 Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법
JP2000100675A (ja) * 1998-09-25 2000-04-07 Toshiba Corp ダミーウェハー
JP3551909B2 (ja) * 1999-11-18 2004-08-11 株式会社デンソー 炭化珪素半導体装置の製造方法
US6699401B1 (en) * 2000-02-15 2004-03-02 Toshiba Ceramics Co., Ltd. Method for manufacturing Si-SiC member for semiconductor heat treatment
DE10039596C2 (de) 2000-08-12 2003-03-27 Omg Ag & Co Kg Geträgerte Metallmembran, Verfahren zu ihrer Herstellung und Verwendung
CA2335260A1 (en) * 2001-02-12 2002-08-12 Sabin Boily Method of forming single crystals of a ceramic, semiconductive or magnetic material
JP3838979B2 (ja) 2001-03-19 2006-10-25 信越半導体株式会社 太陽電池
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP2003086604A (ja) * 2001-09-10 2003-03-20 Advanced Lcd Technologies Development Center Co Ltd 薄膜半導体装置及びその基板ならびにその製造方法
US6660930B1 (en) 2002-06-12 2003-12-09 Rwe Schott Solar, Inc. Solar cell modules with improved backskin
WO2004012257A1 (en) * 2002-07-31 2004-02-05 Astropower, Inc. Method and apparatus for manufacturing net shape semiconductor wafers
US7135728B2 (en) 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7586171B2 (en) 2004-04-14 2009-09-08 Yong Cao Organic electronic device comprising conductive members and processes for forming and using the organic electronic device
US20060003548A1 (en) 2004-06-30 2006-01-05 Kobrinsky Mauro J Highly compliant plate for wafer bonding
FR2948492B1 (fr) * 2009-07-24 2012-03-09 Tile S Recristallisation complete de plaquettes semiconductrices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175513A (ja) * 1985-07-01 1986-04-17 Hitachi Ltd シリコン結晶膜の製造方法
JPS6325209A (ja) * 1986-07-18 1988-02-02 Kawasaki Steel Corp 多結晶シリコンウエハの製造方法
JP2001516324A (ja) * 1997-03-04 2001-09-25 アストロパワー，インコーポレイテッド 柱状結晶粒状多結晶太陽電池基材及び改良された製造方法
JPH11260721A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 多結晶薄膜シリコン層の形成方法および太陽光発電素子

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Publication number Publication date
US9932689B2 (en) 2018-04-03
KR20100038306A (ko) 2010-04-14
CN101790774A (zh) 2010-07-28
JP5591695B2 (ja) 2014-09-17
EP2168145A4 (en) 2011-06-29
HK1146765A1 (en) 2011-07-08
WO2009002550A1 (en) 2008-12-31
US20100295061A1 (en) 2010-11-25
CN101790774B (zh) 2012-05-02
US20140124963A1 (en) 2014-05-08
EP2168145A1 (en) 2010-03-31
JP2010532570A (ja) 2010-10-07
US8633483B2 (en) 2014-01-21

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