JP5591695B2 - 薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程 - Google Patents

薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程 Download PDF

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Publication number
JP5591695B2
JP5591695B2 JP2010514829A JP2010514829A JP5591695B2 JP 5591695 B2 JP5591695 B2 JP 5591695B2 JP 2010514829 A JP2010514829 A JP 2010514829A JP 2010514829 A JP2010514829 A JP 2010514829A JP 5591695 B2 JP5591695 B2 JP 5591695B2
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Japan
Prior art keywords
wafer
thin film
capsule
silicon
recrystallized
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JP2010514829A
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Japanese (ja)
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JP2010532570A5 (https=
JP2010532570A (ja
Inventor
サーチャス，エマニエル，エム．
サーディー，ジェイムス，ジー．
ハントソー，エリック，ティー．
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Massachusetts Institute of Technology
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Massachusetts Institute of Technology
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
JP2010514829A 2007-06-26 2008-06-26 薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程 Expired - Fee Related JP5591695B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US93712907P 2007-06-26 2007-06-26
US60/937,129 2007-06-26
PCT/US2008/008030 WO2009002550A1 (en) 2007-06-26 2008-06-26 Recrystallization of semiconductor wafers in a thin film capsule and related processes

Publications (3)

Publication Number Publication Date
JP2010532570A JP2010532570A (ja) 2010-10-07
JP2010532570A5 JP2010532570A5 (https=) 2011-08-11
JP5591695B2 true JP5591695B2 (ja) 2014-09-17

Family

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JP2010514829A Expired - Fee Related JP5591695B2 (ja) 2007-06-26 2008-06-26 薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程

Country Status (6)

Country Link
US (2) US8633483B2 (https=)
EP (1) EP2168145A4 (https=)
JP (1) JP5591695B2 (https=)
KR (1) KR101527139B1 (https=)
CN (1) CN101790774B (https=)
WO (1) WO2009002550A1 (https=)

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US7771643B1 (en) 2009-02-27 2010-08-10 Corning Incorporated Methods of making an unsupported article of semiconducting material by controlled undercooling
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US8540920B2 (en) * 2009-05-14 2013-09-24 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material
FR2948492B1 (fr) * 2009-07-24 2012-03-09 Tile S Recristallisation complete de plaquettes semiconductrices
US8480803B2 (en) 2009-10-30 2013-07-09 Corning Incorporated Method of making an article of semiconducting material
US8591795B2 (en) * 2009-12-04 2013-11-26 Corning Incorporated Method of exocasting an article of semiconducting material
US8242033B2 (en) 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials
EP2619355B1 (en) * 2010-09-23 2015-01-07 Corning Incorporated Technique to modify the microstructure of semiconducting materials
SG190288A1 (en) * 2010-12-01 2013-06-28 1366 Tech Inc Making semiconductor bodies from molten material using a free-standing interposer sheet
US9879357B2 (en) * 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
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CN104047052B (zh) * 2013-03-11 2018-10-19 三菱综合材料株式会社 半导体装置用硅部件及半导体装置用硅部件的制造方法
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CN112831185B (zh) * 2021-02-23 2022-09-20 中北大学 梯度导电-均匀导热双功能网络低反射高吸收电磁屏蔽聚合物复合材料

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Also Published As

Publication number Publication date
US9932689B2 (en) 2018-04-03
KR20100038306A (ko) 2010-04-14
CN101790774A (zh) 2010-07-28
EP2168145A4 (en) 2011-06-29
HK1146765A1 (en) 2011-07-08
WO2009002550A1 (en) 2008-12-31
US20100295061A1 (en) 2010-11-25
CN101790774B (zh) 2012-05-02
US20140124963A1 (en) 2014-05-08
EP2168145A1 (en) 2010-03-31
JP2010532570A (ja) 2010-10-07
US8633483B2 (en) 2014-01-21
KR101527139B1 (ko) 2015-06-08

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