KR101525234B1 - 반도체 기판의 표면 에칭 장치, 및 그것을 이용하여 표면에 요철 형상이 형성된 반도체 기판을 제조하는 방법 - Google Patents

반도체 기판의 표면 에칭 장치, 및 그것을 이용하여 표면에 요철 형상이 형성된 반도체 기판을 제조하는 방법 Download PDF

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Publication number
KR101525234B1
KR101525234B1 KR1020137007986A KR20137007986A KR101525234B1 KR 101525234 B1 KR101525234 B1 KR 101525234B1 KR 1020137007986 A KR1020137007986 A KR 1020137007986A KR 20137007986 A KR20137007986 A KR 20137007986A KR 101525234 B1 KR101525234 B1 KR 101525234B1
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KR
South Korea
Prior art keywords
semiconductor substrate
etching
chamber
tray
gas
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KR1020137007986A
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English (en)
Korean (ko)
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KR20130045943A (ko
Inventor
코지 아라이
히로시 타나베
야스시 타니구치
Original Assignee
파나소닉 주식회사
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Publication of KR20130045943A publication Critical patent/KR20130045943A/ko
Application granted granted Critical
Publication of KR101525234B1 publication Critical patent/KR101525234B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020137007986A 2011-03-03 2012-02-22 반도체 기판의 표면 에칭 장치, 및 그것을 이용하여 표면에 요철 형상이 형성된 반도체 기판을 제조하는 방법 KR101525234B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011046132 2011-03-03
JPJP-P-2011-046132 2011-03-03
PCT/JP2012/001209 WO2012117696A1 (ja) 2011-03-03 2012-02-22 半導体基板の表面エッチング装置、およびそれを用いて表面に凹凸形状が形成された半導体基板を製造する方法

Publications (2)

Publication Number Publication Date
KR20130045943A KR20130045943A (ko) 2013-05-06
KR101525234B1 true KR101525234B1 (ko) 2015-06-01

Family

ID=46757641

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137007986A KR101525234B1 (ko) 2011-03-03 2012-02-22 반도체 기판의 표면 에칭 장치, 및 그것을 이용하여 표면에 요철 형상이 형성된 반도체 기판을 제조하는 방법

Country Status (4)

Country Link
JP (3) JP5176007B2 (ja)
KR (1) KR101525234B1 (ja)
CN (1) CN103140918A (ja)
WO (1) WO2012117696A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103140918A (zh) * 2011-03-03 2013-06-05 松下电器产业株式会社 半导体基板的表面蚀刻装置、以及使用该表面蚀刻装置制造在表面形成有凹凸形状的半导体基板的方法
EP3038169A1 (en) * 2014-12-22 2016-06-29 Solvay SA Process for the manufacture of solar cells
CN106206377A (zh) * 2016-07-22 2016-12-07 京东方科技集团股份有限公司 一种刻蚀装置
JP6732213B2 (ja) * 2016-11-16 2020-07-29 日本電気硝子株式会社 ガラス基板の製造方法
GB2609025A (en) * 2021-07-19 2023-01-25 Asmpt Smt Singapore Pte Ltd Post-print vacuum degassing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138275A (ja) * 1998-10-29 2000-05-16 Seiko Epson Corp 半導体製造装置
JP2009099581A (ja) * 2007-10-12 2009-05-07 Ulvac Japan Ltd エッチング装置、無欠陥層基板の製造方法
JP2010177267A (ja) * 2009-01-27 2010-08-12 Ulvac Japan Ltd 搬送トレー及びこの搬送トレーを用いた真空処理装置
JP2010267894A (ja) * 2009-05-18 2010-11-25 Panasonic Corp プラズマ処理装置及びプラズマ処理装置におけるトレイの載置方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193129A (ja) * 1987-10-02 1989-04-12 Mitsubishi Electric Corp 化学気相成長装置
JPH07193055A (ja) * 1993-12-27 1995-07-28 Toshiba Corp ドライエッチング方法
KR100218269B1 (ko) * 1996-05-30 1999-09-01 윤종용 건식 에칭기의 잔류 가스 제거 장치 및 방법
JP3493951B2 (ja) * 1997-05-13 2004-02-03 松下電器産業株式会社 シリコン基板の異方性エッチング方法及び太陽電池の製造方法
JP2002237480A (ja) * 2000-07-28 2002-08-23 Sekisui Chem Co Ltd 放電プラズマ処理方法
CN101558477B (zh) * 2005-08-23 2012-05-30 埃克提斯公司 间歇性蚀刻冷却
JP2010205967A (ja) * 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
US20120043062A1 (en) * 2009-03-30 2012-02-23 Tokyo Electron Limited Method for cooling object to be processed, and apparatus for processing object to be processed
JP2010245405A (ja) * 2009-04-08 2010-10-28 Sekisui Chem Co Ltd シリコンの表面粗化方法
CN103140918A (zh) * 2011-03-03 2013-06-05 松下电器产业株式会社 半导体基板的表面蚀刻装置、以及使用该表面蚀刻装置制造在表面形成有凹凸形状的半导体基板的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138275A (ja) * 1998-10-29 2000-05-16 Seiko Epson Corp 半導体製造装置
JP2009099581A (ja) * 2007-10-12 2009-05-07 Ulvac Japan Ltd エッチング装置、無欠陥層基板の製造方法
JP2010177267A (ja) * 2009-01-27 2010-08-12 Ulvac Japan Ltd 搬送トレー及びこの搬送トレーを用いた真空処理装置
JP2010267894A (ja) * 2009-05-18 2010-11-25 Panasonic Corp プラズマ処理装置及びプラズマ処理装置におけるトレイの載置方法

Also Published As

Publication number Publication date
JPWO2012117696A1 (ja) 2014-07-07
CN103140918A (zh) 2013-06-05
KR20130045943A (ko) 2013-05-06
WO2012117696A1 (ja) 2012-09-07
JP5488758B2 (ja) 2014-05-14
JP5422064B2 (ja) 2014-02-19
JP2013070096A (ja) 2013-04-18
JP5176007B2 (ja) 2013-04-03
JP2014030062A (ja) 2014-02-13

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