KR101523893B1 - 플라스마 처리장치 - Google Patents

플라스마 처리장치 Download PDF

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KR101523893B1
KR101523893B1 KR1020147022431A KR20147022431A KR101523893B1 KR 101523893 B1 KR101523893 B1 KR 101523893B1 KR 1020147022431 A KR1020147022431 A KR 1020147022431A KR 20147022431 A KR20147022431 A KR 20147022431A KR 101523893 B1 KR101523893 B1 KR 101523893B1
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plasma
chamber
plasma processing
gas
processing apparatus
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KR20140108331A (ko
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유이치 세츠하라
아키노리 에베
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가부시키가이샤 이엠디
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954—Electron temperature measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020147022431A 2010-08-02 2011-08-02 플라스마 처리장치 Active KR101523893B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010173507A JP5735232B2 (ja) 2010-08-02 2010-08-02 プラズマ処理装置
JPJP-P-2010-173507 2010-08-02
PCT/JP2011/067698 WO2012018024A1 (ja) 2010-08-02 2011-08-02 プラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137005321A Division KR101454132B1 (ko) 2010-08-02 2011-08-02 플라스마 처리장치

Publications (2)

Publication Number Publication Date
KR20140108331A KR20140108331A (ko) 2014-09-05
KR101523893B1 true KR101523893B1 (ko) 2015-05-28

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Family Applications (2)

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KR1020147022431A Active KR101523893B1 (ko) 2010-08-02 2011-08-02 플라스마 처리장치
KR1020137005321A Active KR101454132B1 (ko) 2010-08-02 2011-08-02 플라스마 처리장치

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Country Status (7)

Country Link
US (1) US20130192759A1 (cg-RX-API-DMAC7.html)
EP (1) EP2602813A1 (cg-RX-API-DMAC7.html)
JP (1) JP5735232B2 (cg-RX-API-DMAC7.html)
KR (2) KR101523893B1 (cg-RX-API-DMAC7.html)
CN (1) CN103155103B (cg-RX-API-DMAC7.html)
TW (1) TWI515760B (cg-RX-API-DMAC7.html)
WO (1) WO2012018024A1 (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793126B2 (en) * 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
JP5462368B2 (ja) * 2010-09-06 2014-04-02 株式会社イー・エム・ディー プラズマ処理装置
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
JP2015074792A (ja) * 2013-10-07 2015-04-20 株式会社Ｓｃｒｅｅｎホールディングス プラズマｃｖｄ装置
GB2531233A (en) * 2014-02-27 2016-04-20 C Tech Innovation Ltd Plasma enhanced catalytic conversion method and apparatus
JP6431303B2 (ja) * 2014-07-03 2018-11-28 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置およびエッチング方法
JP6373707B2 (ja) * 2014-09-30 2018-08-15 株式会社Ｓｃｒｅｅｎホールディングス プラズマ処理装置
US20190333735A1 (en) * 2016-06-24 2019-10-31 Emd Corporation Plasma source and plasma processing apparatus
CN108987228B (zh) * 2017-06-02 2024-05-17 北京北方华创微电子装备有限公司 用于处理工件的等离子体反应装置
US12312689B2 (en) * 2019-05-01 2025-05-27 Applied Materials, Inc. Large-area high-density plasma processing chamber for flat panel displays
JP2021077451A (ja) * 2019-11-05 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP6809745B1 (ja) * 2020-08-03 2021-01-06 株式会社ニッシン プラズマ処理装置
KR20230048543A (ko) 2020-08-28 2023-04-11 매슨 테크놀로지 인크 이동가능한 인서트를 갖는 플라즈마 스트립 툴
KR102459640B1 (ko) * 2020-12-21 2022-10-27 주식회사 테스 기판처리장치
US20250232952A1 (en) * 2024-01-12 2025-07-17 Tokyo Electron Limited Balanced resonator source for plasma processing
JP2025185545A (ja) * 2024-06-10 2025-12-22 東京エレクトロン株式会社 プラズマ処理装置及び上部電極

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222399A (ja) * 1994-12-14 1996-08-30 Adtec:Kk 高周波プラズマ発生装置
JP2002016056A (ja) * 2000-06-29 2002-01-18 Nec Corp リモートプラズマｃｖｄ装置及び膜形成方法
JP2003332307A (ja) * 2002-05-08 2003-11-21 Tokyo Electron Ltd プラズマ処理装置

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JP3132599B2 (ja) * 1992-08-05 2001-02-05 株式会社日立製作所 マイクロ波プラズマ処理装置
JPH07142463A (ja) * 1993-11-22 1995-06-02 Nec Corp 半導体装置の製造方法と製造装置
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
DE19841777C1 (de) * 1998-09-12 2000-01-05 Fraunhofer Ges Forschung Vorrichtung zur plasmatechnischen Abscheidung von polykristallinem Diamant
JP3514186B2 (ja) * 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
JP2003529926A (ja) * 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
US20030024900A1 (en) * 2001-07-24 2003-02-06 Tokyo Electron Limited Variable aspect ratio plasma source
JP3830814B2 (ja) * 2001-12-21 2006-10-11 シャープ株式会社 プラズマプロセス装置およびプラズマ制御方法
JP2007035411A (ja) * 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP5082411B2 (ja) * 2006-12-01 2012-11-28 東京エレクトロン株式会社 成膜方法
US8528498B2 (en) * 2007-06-29 2013-09-10 Lam Research Corporation Integrated steerability array arrangement for minimizing non-uniformity
JP2009123934A (ja) * 2007-11-15 2009-06-04 Tokyo Electron Ltd プラズマ処理装置
JP5227245B2 (ja) * 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
US8900403B2 (en) * 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8900402B2 (en) * 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
KR20130072941A (ko) * 2011-12-22 2013-07-02 삼성전자주식회사 플라즈마 식각 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222399A (ja) * 1994-12-14 1996-08-30 Adtec:Kk 高周波プラズマ発生装置
JP2002016056A (ja) * 2000-06-29 2002-01-18 Nec Corp リモートプラズマｃｖｄ装置及び膜形成方法
JP2003332307A (ja) * 2002-05-08 2003-11-21 Tokyo Electron Ltd プラズマ処理装置

Also Published As

Publication number Publication date
CN103155103A (zh) 2013-06-12
US20130192759A1 (en) 2013-08-01
EP2602813A1 (en) 2013-06-12
WO2012018024A1 (ja) 2012-02-09
CN103155103B (zh) 2016-06-08
KR101454132B1 (ko) 2014-10-22
TWI515760B (zh) 2016-01-01
JP5735232B2 (ja) 2015-06-17
KR20140108331A (ko) 2014-09-05
KR20130062982A (ko) 2013-06-13
JP2012033803A (ja) 2012-02-16
TW201234407A (en) 2012-08-16

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