JP2012033803A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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Abstract
【解決手段】本発明に係るプラズマ処理装置10は、プラズマ処理室11と、プラズマ処理室11と連通するプラズマ生成室12と、プラズマを生成するための高周波アンテナ16と、プラズマ中の電子エネルギーを制御するためのプラズマ制御板17と、プラズマ制御板17の位置を調整するための操作棒171及び移動機構172と、を備える。このプラズマ処理装置10では、移動機構172により操作棒171を長手方向に動かし、高周波アンテナ16とプラズマ制御板17の間の距離を調整するだけで、プラズマ生成室12内で生成されたプラズマの電子エネルギー分布を制御することができるため、解離させるガス分子の種類やその解離エネルギーに応じたプラズマ処理を容易に行うことができる。
【選択図】図4
Description
プラズマ生成室と、前記プラズマ生成室内に設けられた高周波アンテナと、プラズマを生成するためのガスを前記プラズマ生成室内に導入するプラズマ生成ガス導入手段と、前記プラズマ生成室と連通するプラズマ処理室と、前記プラズマ処理室内に処理ガスを導入する処理ガス導入手段と、を備えるプラズマ処理装置において、
前記プラズマ生成室内に設けられ、前記高周波アンテナとの距離を変更可能なプラズマ制御板と、
前記プラズマ制御板を移動させるための移動手段と、
を備えることを特徴とする。
この実験装置は、鉛直(以下、「縦」又は「上下」と称す)方向及び水平(以下、「横」と称す)方向に延びる直径150mmの2つの円筒管が互いにクロスした構造を有するステンレス製のクロス管チャンバ51と、クロス管チャンバ51の横方向に延びる円筒管の一方の端部からクロス管チャンバ51内に介挿された、U字形導体から成る高周波アンテナ52と、もう一方の端部からクロス管チャンバ51内に介挿された、プラズマの各種状態を測定するためのラングミュアプローブ53と、高周波アンテナ52の両側の等間隔の位置に配置した縦280mm、横97mm、厚さ6mmの2枚のアルミニウム製平板から成るプラズマ制御板54と、を有する。
まず、プラズマ生成室12内に、プラズマ生成ガス導入口18からプラズマ生成ガスとして水素(H2)ガスを導入すると共に、プラズマ処理室11内に、処理ガス導入口15から処理ガスとしてSiH4ガスを含有する気体を導入する。ここで、プラズマ処理室11内の圧力は1Pa以下とし、プラズマ生成室12内の圧力はプラズマ処理室11内よりも高い2Paとする。このようにプラズマ処理室11とプラズマ生成室12に差圧を設けることで、プラズマ処理室11内に導入された処理ガス(SiH4ガス)が、仕切り板13の貫通孔を通してプラズマ生成室12内に入り込むことを防ぐことができる。
また、上記各実施例では、製膜プロセスについて説明したが、本発明は製膜プロセスには限定されない。例えばエッチングプロセスやアッシングプロセス或いはクリーニングプロセスを始めとするラジカル密度制御が必要なプラズマプロセスにも用いることができる。
11…プラズマ処理室
111…天板
12、22…プラズマ生成室
13…仕切り板
131…貫通孔
132…処理ガス導入孔
1321…処理ガス導入管
133…排気孔
1331…排気管
14…基板台
15…処理ガス導入口
16…高周波アンテナ
161、521…インピーダンス整合器
162、522…高周波電源
17、54…プラズマ制御板
171…操作棒
172…移動機構
18…プラズマ生成ガス導入口
19…排気口(下部排気口)
31…上部排気口
51…クロス管チャンバ
52…高周波アンテナ
53…ラングミュアプローブ
Claims (12)
- プラズマ生成室と、前記プラズマ生成室内に設けられた高周波アンテナと、プラズマを生成するためのガスを前記プラズマ生成室内に導入するプラズマ生成ガス導入手段と、前記プラズマ生成室と連通するプラズマ処理室と、前記プラズマ処理室内に処理ガスを導入する処理ガス導入手段と、を備えるプラズマ処理装置において、
前記プラズマ生成室内に設けられ、前記高周波アンテナとの距離を変更可能なプラズマ制御板と、
前記プラズマ制御板を移動させるための移動手段と、
を備えることを特徴とするプラズマ処理装置。 - 前記プラズマ生成室が、複数備わっていることを特徴とする請求項1に記載のプラズマ処理装置。
- 前記プラズマ生成室と前記プラズマ処理室の間に差圧を生成する差圧生成手段を備えることを特徴とする請求項1又は2に記載のプラズマ処理装置。
- 前記差圧生成手段が、貫通孔を多数有する板材を前記プラズマ生成室と前記プラズマ処理室の境界に設けたものであることを特徴とする請求項3に記載のプラズマ処理装置。
- 前記板材の前記プラズマ処理室側の面に、前記処理ガスを導入するための処理ガス導入孔が設けられていることを特徴とする請求項4に記載のプラズマ処理装置。
- 前記板材が、前記プラズマ処理室の同一の壁面に一定の間隔をおいて設けられた複数のプラズマ処理室を覆うものであり、該板材の、各プラズマ生成室の間の領域において、プラズマ処理室内の排気を行うための排気手段及び該排気手段の排気量の調整を行うための排気量調整手段が設けられていることを特徴とする請求項4又は5に記載のプラズマ処理装置。
- 前記複数のプラズマ生成室が、前記プラズマ処理室の壁面に一定の間隔をおいて設けられ、これらのプラズマ生成室の間に、プラズマ処理室内の排気を行うための排気手段及び該排気手段の排気量の調整を行うための排気量調整手段が設けられていることを特徴とする請求項2〜5のいずれかに記載のプラズマ処理装置。
- プラズマ生成室と、前記プラズマ生成室内に設けられた高周波アンテナと、プラズマを生成するためのガスを前記プラズマ生成室内に導入するプラズマ生成ガス導入手段と、前記プラズマ生成室と連通するプラズマ処理室と、前記プラズマ処理室内に処理ガスを導入する処理ガス導入手段と、を備えるプラズマ処理装置において、
前記プラズマ生成室が、前記プラズマ処理室の壁面に一定の間隔をおいて複数設けられ、
前記複数のプラズマ生成室の間に、プラズマ処理室内の排気を行うための排気手段及び該排気手段の排気量の調整を行うための排気量調整手段が設けられている
ことを特徴とするプラズマ処理装置。 - 前記プラズマ生成室と前記プラズマ処理室の間に差圧を生成する差圧生成手段を備えることを特徴とする請求項8に記載のプラズマ処理装置。
- 前記差圧生成手段が、貫通孔を多数有する板材を前記プラズマ生成室と前記プラズマ処理室の境界に設けたものであることを特徴とする請求項9に記載のプラズマ処理装置。
- 前記板材の前記プラズマ処理室側の面に、前記処理ガスを導入するための処理ガス導入孔が設けられていることを特徴とする請求項10に記載のプラズマ処理装置。
- 前記板材が、前記プラズマ処理室の同一の壁面に設けられた複数のプラズマ処理室を覆うものであることを特徴とする請求項10又は11に記載のプラズマ処理装置。
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JP2010173507A JP5735232B2 (ja) | 2010-08-02 | 2010-08-02 | プラズマ処理装置 |
CN201180037725.2A CN103155103B (zh) | 2010-08-02 | 2011-08-02 | 等离子体处理装置 |
PCT/JP2011/067698 WO2012018024A1 (ja) | 2010-08-02 | 2011-08-02 | プラズマ処理装置 |
KR1020147022431A KR101523893B1 (ko) | 2010-08-02 | 2011-08-02 | 플라스마 처리장치 |
US13/813,602 US20130192759A1 (en) | 2010-08-02 | 2011-08-02 | Plasma processing device |
KR1020137005321A KR101454132B1 (ko) | 2010-08-02 | 2011-08-02 | 플라스마 처리장치 |
TW100127333A TWI515760B (zh) | 2010-08-02 | 2011-08-02 | Plasma processing device |
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JP2015074792A (ja) * | 2013-10-07 | 2015-04-20 | 株式会社Screenホールディングス | プラズマcvd装置 |
JP2016015436A (ja) * | 2014-07-03 | 2016-01-28 | 株式会社Screenホールディングス | エッチング装置およびエッチング方法 |
JP2022028496A (ja) * | 2020-08-03 | 2022-02-16 | 株式会社ニッシン | プラズマ処理装置 |
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WO2012032596A1 (ja) * | 2010-09-06 | 2012-03-15 | 株式会社イー・エム・ディー | プラズマ処理装置 |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
GB2531233A (en) * | 2014-02-27 | 2016-04-20 | C Tech Innovation Ltd | Plasma enhanced catalytic conversion method and apparatus |
JP6373707B2 (ja) * | 2014-09-30 | 2018-08-15 | 株式会社Screenホールディングス | プラズマ処理装置 |
JP6863608B2 (ja) * | 2016-06-24 | 2021-04-21 | 株式会社イー・エム・ディー | プラズマ源及びプラズマ処理装置 |
CN108987228B (zh) * | 2017-06-02 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 用于处理工件的等离子体反应装置 |
US20200347499A1 (en) * | 2019-05-01 | 2020-11-05 | Applied Materials, Inc. | Large-area high-density plasma processing chamber for flat panel displays |
JP2021077451A (ja) * | 2019-11-05 | 2021-05-20 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
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EP2602813A1 (en) | 2013-06-12 |
TW201234407A (en) | 2012-08-16 |
WO2012018024A1 (ja) | 2012-02-09 |
KR20130062982A (ko) | 2013-06-13 |
KR101454132B1 (ko) | 2014-10-22 |
CN103155103A (zh) | 2013-06-12 |
KR20140108331A (ko) | 2014-09-05 |
KR101523893B1 (ko) | 2015-05-28 |
JP5735232B2 (ja) | 2015-06-17 |
CN103155103B (zh) | 2016-06-08 |
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