JP6863608B2 - プラズマ源及びプラズマ処理装置 - Google Patents
プラズマ源及びプラズマ処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 69
- 239000002994 raw material Substances 0.000 claims description 12
- 230000005672 electromagnetic field Effects 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 51
- 230000001133 acceleration Effects 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 12
- 238000005530 etching Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0473—Changing particle velocity accelerating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Spectroscopy & Molecular Physics (AREA)
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- Toxicology (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
a) プラズマを生成するプラズマ生成空間と、該プラズマ生成空間と前記プラズマ処理空間とを区切る壁とを有するプラズマ生成室と、
b) 前記壁に設けられた、前記プラズマ生成空間とプラズマ処理空間を連通させる開口と、
c) プラズマを生成するのに必要な所定強度の高周波電磁界を前記プラズマ生成空間内に生成可能な位置に設けられた、巻数が1回未満のコイルである高周波アンテナと、
d) 前記壁のうち前記開口の内壁面に、該開口の空間を挟むように設けられた1対の電圧印加電極と、
e) 前記プラズマ生成空間内の、前記電圧印加電極よりも前記開口の反対側寄りの位置にプラズマ原料ガスを供給するガス供給部と
を備えることを特徴とする。
まず、高周波アンテナ13に供給する高周波電力を1000W(周波数は13.56MHz)、電圧印加電極14に供給する高周波電力を200W(周波数は60MHz)に固定し、複数のプロセス圧力において、生成されたプラズマのイオン飽和電流密度を測定した。比較のために、電圧印加電極14への高周波電力の供給を停止して高周波アンテナ13のみに高周波電力(1000W、13.56MHz)を供給した場合と、高周波アンテナ13への高周波電力の供給を停止して電圧印加電極14のみに高周波電力(200W、60MHz)を供給した場合についても同様の実験を行った。それらの実験結果を図3に示す。これらの実験結果から、測定範囲内のどの圧力においても、高周波アンテナ13と電圧印加電極14のうちいずれか一方のみに高周波電力を供給した場合にはほとんどプラズマを生成することができなかったのに対して、高周波アンテナ13と電圧印加電極14の双方に高周波電力を供給した場合にはプラズマを生成することができることが確認された。
例えば高周波アンテナ13の形状は、上記のU字形の他にも、半円等の部分円形のものや、矩形のものなど、巻き数が1回以下である種々の形状を取ることができる。
また、高周波アンテナ13はプラズマ生成室11の外に設けてもよいし、壁111内に設けてもよい。それらの場合には、高周波アンテナ13の周囲に保護管131を設ける必要はなく、壁111に誘電体製のものを用いればよい。
第1高周波電源161から高周波アンテナ13に、あるいは第2高周波電源162により電圧印加電極14間に供給する高周波電力の大きさ及び周波数、並びに直流電源163から加速電極16に与える電位の大きさはいずれも前述のものには限定されない。また、電圧印加電極14には、高周波電圧の代わりに直流電圧を印加してもよい。
11…プラズマ生成室
111…プラズマ生成室の壁
12…開口
13…高周波アンテナ
131…保護管
14…電圧印加電極
15…ガス供給管
151…ガス供給管の先端
16…加速電極
161…第1高周波電源
162…第2高周波電源
163…直流電源
163A1…第1直流電源
163A2…第2直流電源
163A3…第3直流電源
21…プラズマ処理室
22…被処理物台
23…プラズマ処理ガス導入管
24…排気管
S…被処理物
Claims (6)
- プラズマを用いた処理を行うプラズマ処理空間にプラズマを供給するための装置であって、
a) プラズマを生成するプラズマ生成空間と、該プラズマ生成空間と前記プラズマ処理空間とを区切る壁とを有するプラズマ生成室と、
b) 前記壁に設けられた、前記プラズマ生成空間とプラズマ処理空間を連通させる開口と、
c) プラズマを生成するのに必要な所定強度の高周波電磁界を前記プラズマ生成空間内に生成可能な位置に設けられた、巻数が1回未満のコイルである高周波アンテナと、
d) 前記壁のうち前記開口の内壁面に、該開口の空間を挟むように設けられた1対の電圧印加電極と、
e) 前記プラズマ生成空間内の、前記電圧印加電極よりも前記開口の反対側寄りの位置にプラズマ原料ガスを供給するガス供給部と
を備えることを特徴とするプラズマ源。 - 前記電圧印加電極に、高周波電圧を印加する高周波電源が接続されていることを特徴とする請求項1に記載のプラズマ源。
- 前記高周波電圧が10MHz〜100MHzの周波数を有することを特徴とする請求項2に記載のプラズマ源。
- 前記プラズマ生成空間の外の前記開口に対向する位置、又は前記プラズマ生成空間内であって前記電圧印加電極よりも前記開口側の位置に設けられた、孔を有する加速電極を備えることを特徴とする請求項1〜3のいずれかに記載のプラズマ源。
- 前記開口はスリットの形状を有し、
前記1対の電圧印加電極の各々は前記スリットに平行な面を有し、該面が互いに該スリットを挟んで対向するように設けられている
ことを特徴とする請求項1〜4のいずれかに記載のプラズマ源。 - 請求項1〜5のいずれかに記載のプラズマ源と、内部が前記プラズマ処理空間であるプラズマ処理室とを備えることを特徴とするプラズマ処理装置。
Applications Claiming Priority (3)
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JP2016125618 | 2016-06-24 | ||
JP2016125618 | 2016-06-24 | ||
PCT/JP2017/022321 WO2017221832A1 (ja) | 2016-06-24 | 2017-06-16 | プラズマ源及びプラズマ処理装置 |
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JPWO2017221832A1 JPWO2017221832A1 (ja) | 2019-04-18 |
JP6863608B2 true JP6863608B2 (ja) | 2021-04-21 |
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Country | Link |
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US (1) | US20190333735A1 (ja) |
JP (1) | JP6863608B2 (ja) |
KR (1) | KR102299608B1 (ja) |
CN (1) | CN109479369B (ja) |
TW (1) | TWI659675B (ja) |
WO (1) | WO2017221832A1 (ja) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3757698B2 (ja) * | 1999-09-07 | 2006-03-22 | 富士ゼロックス株式会社 | 半導体製造装置および半導体製造システム |
JP5098882B2 (ja) | 2007-08-31 | 2012-12-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5400434B2 (ja) * | 2009-03-11 | 2014-01-29 | 株式会社イー・エム・ディー | プラズマ処理装置 |
JP5735232B2 (ja) * | 2010-08-02 | 2015-06-17 | 株式会社イー・エム・ディー | プラズマ処理装置 |
JP5263266B2 (ja) * | 2010-11-09 | 2013-08-14 | パナソニック株式会社 | プラズマドーピング方法及び装置 |
JP5500097B2 (ja) * | 2011-02-22 | 2014-05-21 | パナソニック株式会社 | 誘導結合型プラズマ処理装置及び方法 |
JP6002522B2 (ja) * | 2012-09-27 | 2016-10-05 | 株式会社Screenホールディングス | 薄膜形成装置、薄膜形成方法 |
JP2016066704A (ja) * | 2014-09-25 | 2016-04-28 | 株式会社Screenホールディングス | エッチング装置およびエッチング方法 |
US9230773B1 (en) * | 2014-10-16 | 2016-01-05 | Varian Semiconductor Equipment Associates, Inc. | Ion beam uniformity control |
-
2017
- 2017-06-16 KR KR1020197001248A patent/KR102299608B1/ko active IP Right Grant
- 2017-06-16 CN CN201780038613.6A patent/CN109479369B/zh active Active
- 2017-06-16 WO PCT/JP2017/022321 patent/WO2017221832A1/ja active Application Filing
- 2017-06-16 US US16/312,424 patent/US20190333735A1/en not_active Abandoned
- 2017-06-16 JP JP2018524036A patent/JP6863608B2/ja active Active
- 2017-06-20 TW TW106120540A patent/TWI659675B/zh active
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TW201811124A (zh) | 2018-03-16 |
TWI659675B (zh) | 2019-05-11 |
JPWO2017221832A1 (ja) | 2019-04-18 |
KR20190021328A (ko) | 2019-03-05 |
CN109479369A (zh) | 2019-03-15 |
US20190333735A1 (en) | 2019-10-31 |
CN109479369B (zh) | 2021-01-15 |
KR102299608B1 (ko) | 2021-09-09 |
WO2017221832A1 (ja) | 2017-12-28 |
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