KR101518107B1 - 마스크에 의해 유발되는 이미징 수차의 교정이 있는 투영 노광 장치 작동 방법 - Google Patents

마스크에 의해 유발되는 이미징 수차의 교정이 있는 투영 노광 장치 작동 방법 Download PDF

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KR101518107B1
KR101518107B1 KR1020127025419A KR20127025419A KR101518107B1 KR 101518107 B1 KR101518107 B1 KR 101518107B1 KR 1020127025419 A KR1020127025419 A KR 1020127025419A KR 20127025419 A KR20127025419 A KR 20127025419A KR 101518107 B1 KR101518107 B1 KR 101518107B1
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structural
different
manipulator
mask
pitches
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KR20130019384A (ko
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요하네스 루오프
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
KR1020127025419A 2010-03-30 2011-03-17 마스크에 의해 유발되는 이미징 수차의 교정이 있는 투영 노광 장치 작동 방법 Active KR101518107B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US31888010P 2010-03-30 2010-03-30
US61/318,880 2010-03-30
DE102010029651.1 2010-06-02
DE102010029651A DE102010029651A1 (de) 2010-06-02 2010-06-02 Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
PCT/EP2011/054084 WO2011120821A1 (en) 2010-03-30 2011-03-17 Method for operating a projection exposure apparatus with correction of imaging aberrations induced by the mask

Publications (2)

Publication Number Publication Date
KR20130019384A KR20130019384A (ko) 2013-02-26
KR101518107B1 true KR101518107B1 (ko) 2015-05-06

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KR1020127025419A Active KR101518107B1 (ko) 2010-03-30 2011-03-17 마스크에 의해 유발되는 이미징 수차의 교정이 있는 투영 노광 장치 작동 방법

Country Status (7)

Country Link
US (2) US9041908B2 (https=)
JP (3) JP5768124B2 (https=)
KR (1) KR101518107B1 (https=)
CN (1) CN102834776B (https=)
DE (1) DE102010029651A1 (https=)
TW (1) TWI435188B (https=)
WO (1) WO2011120821A1 (https=)

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US9298102B2 (en) 2013-03-13 2016-03-29 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
DE102013204391B3 (de) * 2013-03-13 2014-05-28 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Wellenfrontmanipulator
US9651872B2 (en) 2013-03-13 2017-05-16 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
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KR101882633B1 (ko) * 2014-07-22 2018-07-26 칼 짜이스 에스엠티 게엠베하 리소그래피 마스크의 3d 에어리얼 이미지를 3차원으로 측정하는 방법
DE102014218474A1 (de) 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
CN116936393B (zh) * 2016-02-24 2024-12-20 科磊股份有限公司 光学计量的准确度提升
DE102016205617A1 (de) 2016-04-05 2017-10-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage
DE102016209616A1 (de) * 2016-06-01 2017-12-07 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Vorhersage des mit einer Maske bei Durchführung eines Lithographieprozesses erzielten Abbildungsergebnisses
DE102016212477A1 (de) 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
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DE102016221261A1 (de) * 2016-10-28 2018-05-03 Carl Zeiss Smt Gmbh Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente
US10162257B2 (en) 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet lithography system, device, and method for printing low pattern density features
DE102017115262B9 (de) 2017-07-07 2021-05-27 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie
DE102017115365B4 (de) 2017-07-10 2020-10-15 Carl Zeiss Smt Gmbh Inspektionsvorrichtung für Masken für die Halbleiterlithographie und Verfahren
DE102018202637B4 (de) * 2018-02-21 2021-09-23 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Fokuslage einer Lithographie-Maske und Metrologiesystem zur Durchführung eines derartigen Verfahrens
US11429027B2 (en) * 2018-08-17 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Photolithography method and apparatus
DE102019121624A1 (de) 2018-08-17 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Fotolithografieverfahren und -vorrichtung
CN118068659A (zh) * 2019-04-30 2024-05-24 Asml荷兰有限公司 用于光刻成像的方法和设备
DE102019208552B4 (de) * 2019-06-12 2025-10-09 Carl Zeiss Smt Gmbh Verfahren zum Ermitteln eines Produktions-Luftbildes eines zu vermessenden Objektes
DE102020209784A1 (de) * 2020-08-04 2022-02-10 Carl Zeiss Smt Gmbh Verfahren zur herstellung oder einstellung einer projektionsbelichtungsanlage
DE102023127297B3 (de) * 2023-10-06 2025-03-20 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, mikrolithographische Maske sowie Projektionsbelichtungsanlage

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JP6527397B2 (ja) 2019-06-05
JP5768124B2 (ja) 2015-08-26
JP2013524497A (ja) 2013-06-17
JP2019095814A (ja) 2019-06-20
DE102010029651A1 (de) 2011-12-08
KR20130019384A (ko) 2013-02-26
US9041908B2 (en) 2015-05-26
WO2011120821A1 (en) 2011-10-06
JP2015222428A (ja) 2015-12-10
CN102834776A (zh) 2012-12-19
US20120320358A1 (en) 2012-12-20
TW201202866A (en) 2012-01-16
TWI435188B (zh) 2014-04-21
CN102834776B (zh) 2015-05-06
US20150234289A1 (en) 2015-08-20

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