CN102834776B - 具有对由掩模引起的成像像差的校正的操作投射曝光设备的方法 - Google Patents

具有对由掩模引起的成像像差的校正的操作投射曝光设备的方法 Download PDF

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Publication number
CN102834776B
CN102834776B CN201180016812.XA CN201180016812A CN102834776B CN 102834776 B CN102834776 B CN 102834776B CN 201180016812 A CN201180016812 A CN 201180016812A CN 102834776 B CN102834776 B CN 102834776B
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manipulator
pitch
different
mask
wavefront
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CN201180016812.XA
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Chinese (zh)
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CN102834776A (zh
Inventor
J.罗夫
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
CN201180016812.XA 2010-03-30 2011-03-17 具有对由掩模引起的成像像差的校正的操作投射曝光设备的方法 Active CN102834776B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US31888010P 2010-03-30 2010-03-30
US61/318,880 2010-03-30
DE102010029651.1 2010-06-02
DE102010029651A DE102010029651A1 (de) 2010-06-02 2010-06-02 Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
PCT/EP2011/054084 WO2011120821A1 (en) 2010-03-30 2011-03-17 Method for operating a projection exposure apparatus with correction of imaging aberrations induced by the mask

Publications (2)

Publication Number Publication Date
CN102834776A CN102834776A (zh) 2012-12-19
CN102834776B true CN102834776B (zh) 2015-05-06

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CN201180016812.XA Active CN102834776B (zh) 2010-03-30 2011-03-17 具有对由掩模引起的成像像差的校正的操作投射曝光设备的方法

Country Status (7)

Country Link
US (2) US9041908B2 (https=)
JP (3) JP5768124B2 (https=)
KR (1) KR101518107B1 (https=)
CN (1) CN102834776B (https=)
DE (1) DE102010029651A1 (https=)
TW (1) TWI435188B (https=)
WO (1) WO2011120821A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010061950A1 (de) * 2010-11-25 2012-05-31 Carl Zeiss Smt Gmbh Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
EA024947B1 (ru) 2010-12-28 2016-11-30 Юнилевер Нв Способ получения эмульсии
US9410596B2 (en) 2011-11-04 2016-08-09 Honeywell International Inc. Mounting systems for structural members, fastening assemblies thereof, and vibration isolation systems including the same
US9475594B2 (en) 2012-09-25 2016-10-25 Honeywell International Inc. Launch lock assemblies with reduced preload and spacecraft isolation systems including the same
US9298102B2 (en) 2013-03-13 2016-03-29 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
DE102013204391B3 (de) * 2013-03-13 2014-05-28 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Wellenfrontmanipulator
US9651872B2 (en) 2013-03-13 2017-05-16 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
US9690189B2 (en) * 2013-06-21 2017-06-27 Hoya Corporation Mask blank substrate, mask blank, transfer mask, and method of manufacturing semiconductor device
KR101882633B1 (ko) * 2014-07-22 2018-07-26 칼 짜이스 에스엠티 게엠베하 리소그래피 마스크의 3d 에어리얼 이미지를 3차원으로 측정하는 방법
DE102014218474A1 (de) 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
CN116936393B (zh) * 2016-02-24 2024-12-20 科磊股份有限公司 光学计量的准确度提升
DE102016205617A1 (de) 2016-04-05 2017-10-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage
DE102016209616A1 (de) * 2016-06-01 2017-12-07 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Vorhersage des mit einer Maske bei Durchführung eines Lithographieprozesses erzielten Abbildungsergebnisses
DE102016212477A1 (de) 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
WO2018010928A1 (en) * 2016-07-11 2018-01-18 Asml Netherlands B.V. Method and apparatus for determining a fingerprint of a performance parameter
DE102016221261A1 (de) * 2016-10-28 2018-05-03 Carl Zeiss Smt Gmbh Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente
US10162257B2 (en) 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet lithography system, device, and method for printing low pattern density features
DE102017115262B9 (de) 2017-07-07 2021-05-27 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie
DE102017115365B4 (de) 2017-07-10 2020-10-15 Carl Zeiss Smt Gmbh Inspektionsvorrichtung für Masken für die Halbleiterlithographie und Verfahren
DE102018202637B4 (de) * 2018-02-21 2021-09-23 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Fokuslage einer Lithographie-Maske und Metrologiesystem zur Durchführung eines derartigen Verfahrens
US11429027B2 (en) * 2018-08-17 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Photolithography method and apparatus
DE102019121624A1 (de) 2018-08-17 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Fotolithografieverfahren und -vorrichtung
CN118068659A (zh) * 2019-04-30 2024-05-24 Asml荷兰有限公司 用于光刻成像的方法和设备
DE102019208552B4 (de) * 2019-06-12 2025-10-09 Carl Zeiss Smt Gmbh Verfahren zum Ermitteln eines Produktions-Luftbildes eines zu vermessenden Objektes
DE102020209784A1 (de) * 2020-08-04 2022-02-10 Carl Zeiss Smt Gmbh Verfahren zur herstellung oder einstellung einer projektionsbelichtungsanlage
DE102023127297B3 (de) * 2023-10-06 2025-03-20 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, mikrolithographische Maske sowie Projektionsbelichtungsanlage

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0153796B1 (ko) * 1993-09-24 1998-11-16 사토 후미오 노광장치 및 노광방법
JP3368091B2 (ja) 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
EP0851304B1 (en) 1996-12-28 2004-03-17 Canon Kabushiki Kaisha Projection exposure apparatus and device manufacturing method
JP2000091209A (ja) * 1998-09-14 2000-03-31 Nikon Corp 露光装置の製造方法、露光装置、及びデバイス製造方法
SE9800665D0 (sv) 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
US6816302B2 (en) 1998-03-02 2004-11-09 Micronic Laser Systems Ab Pattern generator
US7186983B2 (en) 1998-05-05 2007-03-06 Carl Zeiss Smt Ag Illumination system particularly for microlithography
DE19901295A1 (de) 1999-01-15 2000-07-20 Zeiss Carl Fa Optische Abbildungsvorrichtung, insbesondere Objektiv, mit wenigstens einem optischen Element
DE10143385C2 (de) 2001-09-05 2003-07-17 Zeiss Carl Projektionsbelichtungsanlage
DE10209016A1 (de) 2002-02-28 2003-09-11 Alen Jambrecina Ultraschallkopf mit Flüssigkeitsspendevorrichtung
US20030234918A1 (en) 2002-06-20 2003-12-25 Nikon Corporation Adjustable soft mounts in kinematic lens mounting system
US7042550B2 (en) * 2002-11-28 2006-05-09 Asml Netherlands B.V. Device manufacturing method and computer program
EP1670041A4 (en) 2003-08-28 2007-10-17 Nikon Corp METHOD AND APPARATUS FOR EXPOSURE, AND METHOD FOR MANUFACTURING ASSOCIATED DEVICE
JP4717813B2 (ja) 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20160085375A (ko) 2004-05-17 2016-07-15 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7403264B2 (en) * 2004-07-08 2008-07-22 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus
WO2006016584A1 (ja) * 2004-08-09 2006-02-16 Nikon Corporation 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法
DE102005034991A1 (de) 2004-09-08 2006-04-13 Carl Zeiss Smt Ag Strahlumformsystem für ein Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage
KR100614651B1 (ko) 2004-10-11 2006-08-22 삼성전자주식회사 회로 패턴의 노광을 위한 장치 및 방법, 사용되는포토마스크 및 그 설계 방법, 그리고 조명계 및 그 구현방법
JP2006173305A (ja) * 2004-12-15 2006-06-29 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
US7312852B2 (en) 2004-12-28 2007-12-25 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
JP4753009B2 (ja) * 2005-05-24 2011-08-17 株式会社ニコン 計測方法、露光方法、及び露光装置
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
DE102005057860A1 (de) 2005-12-03 2007-06-06 Carl Zeiss Smt Ag Objektiv, insbesondere Projektionsobjektiv für die Halbleiterlithographie
ATE467153T1 (de) * 2005-12-09 2010-05-15 Imec Verfahren und vorrichtungen zur lithographie
JP4793683B2 (ja) * 2006-01-23 2011-10-12 株式会社ニコン 算出方法、調整方法及び露光方法、並びに像形成状態調整システム及び露光装置
JP2008041710A (ja) * 2006-08-01 2008-02-21 Fujitsu Ltd 照明光学装置、露光方法及び設計方法
DE102006045075A1 (de) 2006-09-21 2008-04-03 Carl Zeiss Smt Ag Steuerbares optisches Element
DE102006047666A1 (de) 2006-09-28 2008-04-03 Carl Zeiss Smt Ag Projektionsobjektiv für eine Mikrolithographieanlage mit verbesserten Abbildungseigenschaften und Verfahren zum Verbessern der Abbildungseigenschaften des Projektionsobjektives
EP1950594A1 (de) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
WO2009026970A1 (en) 2007-08-24 2009-03-05 Carl Zeiss Smt Ag Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
DE102007043958B4 (de) 2007-09-14 2011-08-25 Carl Zeiss SMT GmbH, 73447 Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
JP4971932B2 (ja) * 2007-10-01 2012-07-11 キヤノン株式会社 照明光学系、露光装置、デバイス製造方法および偏光制御ユニット
JP5487118B2 (ja) 2008-02-15 2014-05-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影露光装置に使用するファセットミラー
DE102009016063A1 (de) 2008-05-21 2009-11-26 Carl Zeiss Smt Ag Mikrolithographisches Projektionsbelichtungsverfahren, sowie Projektionsbelichtungsanlage
JP5078764B2 (ja) 2008-06-10 2012-11-21 キヤノン株式会社 計算機ホログラム、露光装置及びデバイスの製造方法

Also Published As

Publication number Publication date
KR101518107B1 (ko) 2015-05-06
JP6527397B2 (ja) 2019-06-05
JP5768124B2 (ja) 2015-08-26
JP2013524497A (ja) 2013-06-17
JP2019095814A (ja) 2019-06-20
DE102010029651A1 (de) 2011-12-08
KR20130019384A (ko) 2013-02-26
US9041908B2 (en) 2015-05-26
WO2011120821A1 (en) 2011-10-06
JP2015222428A (ja) 2015-12-10
CN102834776A (zh) 2012-12-19
US20120320358A1 (en) 2012-12-20
TW201202866A (en) 2012-01-16
TWI435188B (zh) 2014-04-21
US20150234289A1 (en) 2015-08-20

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