DE102010029651A1 - Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern - Google Patents

Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern Download PDF

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Publication number
DE102010029651A1
DE102010029651A1 DE102010029651A DE102010029651A DE102010029651A1 DE 102010029651 A1 DE102010029651 A1 DE 102010029651A1 DE 102010029651 A DE102010029651 A DE 102010029651A DE 102010029651 A DE102010029651 A DE 102010029651A DE 102010029651 A1 DE102010029651 A1 DE 102010029651A1
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Germany
Prior art keywords
manipulator
different
mask
pitches
objective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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DE102010029651A
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German (de)
English (en)
Inventor
Johannes Ruoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE102010029651A priority Critical patent/DE102010029651A1/de
Priority to KR1020127025419A priority patent/KR101518107B1/ko
Priority to PCT/EP2011/054084 priority patent/WO2011120821A1/en
Priority to JP2013501741A priority patent/JP5768124B2/ja
Priority to CN201180016812.XA priority patent/CN102834776B/zh
Priority to TW100109849A priority patent/TWI435188B/zh
Publication of DE102010029651A1 publication Critical patent/DE102010029651A1/de
Priority to US13/555,785 priority patent/US9041908B2/en
Priority to US14/700,973 priority patent/US20150234289A1/en
Priority to JP2015124720A priority patent/JP6527397B2/ja
Priority to JP2019034562A priority patent/JP2019095814A/ja
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
DE102010029651A 2010-03-30 2010-06-02 Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern Ceased DE102010029651A1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE102010029651A DE102010029651A1 (de) 2010-06-02 2010-06-02 Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
KR1020127025419A KR101518107B1 (ko) 2010-03-30 2011-03-17 마스크에 의해 유발되는 이미징 수차의 교정이 있는 투영 노광 장치 작동 방법
PCT/EP2011/054084 WO2011120821A1 (en) 2010-03-30 2011-03-17 Method for operating a projection exposure apparatus with correction of imaging aberrations induced by the mask
JP2013501741A JP5768124B2 (ja) 2010-03-30 2011-03-17 マスクによって生じる結像収差の補正を用いて投影露光装置を作動させる方法
CN201180016812.XA CN102834776B (zh) 2010-03-30 2011-03-17 具有对由掩模引起的成像像差的校正的操作投射曝光设备的方法
TW100109849A TWI435188B (zh) 2010-03-30 2011-03-23 操作具有校正由光罩之精密效應所引起之成像像差的功能的微影投射曝光裝置的方法
US13/555,785 US9041908B2 (en) 2010-03-30 2012-07-23 Method for operating a projection exposure apparatus with correction of imaging aberrations induced by the mask
US14/700,973 US20150234289A1 (en) 2010-03-30 2015-04-30 Method for operating a projection exposure apparatus with correction of imaging aberrations induced by the mask
JP2015124720A JP6527397B2 (ja) 2010-03-30 2015-06-22 マスクによって生じる結像収差の補正を用いて投影露光装置を作動させる方法
JP2019034562A JP2019095814A (ja) 2010-03-30 2019-02-27 マスクによって生じる結像収差の補正を用いて投影露光装置を作動させる方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010029651A DE102010029651A1 (de) 2010-06-02 2010-06-02 Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern

Publications (1)

Publication Number Publication Date
DE102010029651A1 true DE102010029651A1 (de) 2011-12-08

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DE102010029651A Ceased DE102010029651A1 (de) 2010-03-30 2010-06-02 Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern

Country Status (7)

Country Link
US (2) US9041908B2 (https=)
JP (3) JP5768124B2 (https=)
KR (1) KR101518107B1 (https=)
CN (1) CN102834776B (https=)
DE (1) DE102010029651A1 (https=)
TW (1) TWI435188B (https=)
WO (1) WO2011120821A1 (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
DE102023127297B3 (de) 2023-10-06 2025-03-20 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, mikrolithographische Maske sowie Projektionsbelichtungsanlage

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DE102010061950A1 (de) * 2010-11-25 2012-05-31 Carl Zeiss Smt Gmbh Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
EA024947B1 (ru) 2010-12-28 2016-11-30 Юнилевер Нв Способ получения эмульсии
US9410596B2 (en) 2011-11-04 2016-08-09 Honeywell International Inc. Mounting systems for structural members, fastening assemblies thereof, and vibration isolation systems including the same
US9475594B2 (en) 2012-09-25 2016-10-25 Honeywell International Inc. Launch lock assemblies with reduced preload and spacecraft isolation systems including the same
US9298102B2 (en) 2013-03-13 2016-03-29 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
DE102013204391B3 (de) * 2013-03-13 2014-05-28 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Wellenfrontmanipulator
US9651872B2 (en) 2013-03-13 2017-05-16 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
US9690189B2 (en) * 2013-06-21 2017-06-27 Hoya Corporation Mask blank substrate, mask blank, transfer mask, and method of manufacturing semiconductor device
KR101882633B1 (ko) * 2014-07-22 2018-07-26 칼 짜이스 에스엠티 게엠베하 리소그래피 마스크의 3d 에어리얼 이미지를 3차원으로 측정하는 방법
DE102014218474A1 (de) 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
CN116936393B (zh) * 2016-02-24 2024-12-20 科磊股份有限公司 光学计量的准确度提升
DE102016205617A1 (de) 2016-04-05 2017-10-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage
DE102016209616A1 (de) * 2016-06-01 2017-12-07 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Vorhersage des mit einer Maske bei Durchführung eines Lithographieprozesses erzielten Abbildungsergebnisses
DE102016212477A1 (de) 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
WO2018010928A1 (en) * 2016-07-11 2018-01-18 Asml Netherlands B.V. Method and apparatus for determining a fingerprint of a performance parameter
DE102016221261A1 (de) * 2016-10-28 2018-05-03 Carl Zeiss Smt Gmbh Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente
US10162257B2 (en) 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet lithography system, device, and method for printing low pattern density features
DE102017115262B9 (de) 2017-07-07 2021-05-27 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie
DE102017115365B4 (de) 2017-07-10 2020-10-15 Carl Zeiss Smt Gmbh Inspektionsvorrichtung für Masken für die Halbleiterlithographie und Verfahren
DE102018202637B4 (de) * 2018-02-21 2021-09-23 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Fokuslage einer Lithographie-Maske und Metrologiesystem zur Durchführung eines derartigen Verfahrens
US11429027B2 (en) * 2018-08-17 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Photolithography method and apparatus
DE102019121624A1 (de) 2018-08-17 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Fotolithografieverfahren und -vorrichtung
CN118068659A (zh) * 2019-04-30 2024-05-24 Asml荷兰有限公司 用于光刻成像的方法和设备
DE102019208552B4 (de) * 2019-06-12 2025-10-09 Carl Zeiss Smt Gmbh Verfahren zum Ermitteln eines Produktions-Luftbildes eines zu vermessenden Objektes
DE102020209784A1 (de) * 2020-08-04 2022-02-10 Carl Zeiss Smt Gmbh Verfahren zur herstellung oder einstellung einer projektionsbelichtungsanlage

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
DE102023127297B3 (de) 2023-10-06 2025-03-20 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, mikrolithographische Maske sowie Projektionsbelichtungsanlage

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KR101518107B1 (ko) 2015-05-06
JP6527397B2 (ja) 2019-06-05
JP5768124B2 (ja) 2015-08-26
JP2013524497A (ja) 2013-06-17
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