KR101454068B1 - 기판 위치 검출 장치, 이것을 구비하는 성막 장치 및 기판 위치 검출 방법 - Google Patents

기판 위치 검출 장치, 이것을 구비하는 성막 장치 및 기판 위치 검출 방법 Download PDF

Info

Publication number
KR101454068B1
KR101454068B1 KR1020110098204A KR20110098204A KR101454068B1 KR 101454068 B1 KR101454068 B1 KR 101454068B1 KR 1020110098204 A KR1020110098204 A KR 1020110098204A KR 20110098204 A KR20110098204 A KR 20110098204A KR 101454068 B1 KR101454068 B1 KR 101454068B1
Authority
KR
South Korea
Prior art keywords
substrate
position detection
susceptor
wafer
loading section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020110098204A
Other languages
English (en)
Korean (ko)
Other versions
KR20120032447A (ko
Inventor
가쯔요시 아이까와
마나부 혼마
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20120032447A publication Critical patent/KR20120032447A/ko
Application granted granted Critical
Publication of KR101454068B1 publication Critical patent/KR101454068B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020110098204A 2010-09-28 2011-09-28 기판 위치 검출 장치, 이것을 구비하는 성막 장치 및 기판 위치 검출 방법 Active KR101454068B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2010-217253 2010-09-28
JP2010217253 2010-09-28
JPJP-P-2011-151081 2011-07-07
JP2011151081A JP5524139B2 (ja) 2010-09-28 2011-07-07 基板位置検出装置、これを備える成膜装置、および基板位置検出方法

Publications (2)

Publication Number Publication Date
KR20120032447A KR20120032447A (ko) 2012-04-05
KR101454068B1 true KR101454068B1 (ko) 2014-10-27

Family

ID=45870265

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110098204A Active KR101454068B1 (ko) 2010-09-28 2011-09-28 기판 위치 검출 장치, 이것을 구비하는 성막 장치 및 기판 위치 검출 방법

Country Status (5)

Country Link
US (1) US8854449B2 (https=)
JP (1) JP5524139B2 (https=)
KR (1) KR101454068B1 (https=)
CN (1) CN102420154B (https=)
TW (1) TWI476859B (https=)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
US9416448B2 (en) * 2008-08-29 2016-08-16 Tokyo Electron Limited Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method
JP5107185B2 (ja) 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
US9297072B2 (en) 2008-12-01 2016-03-29 Tokyo Electron Limited Film deposition apparatus
JP5257328B2 (ja) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
JP5553588B2 (ja) * 2009-12-10 2014-07-16 東京エレクトロン株式会社 成膜装置
TW201326738A (zh) * 2011-12-16 2013-07-01 Hon Hai Prec Ind Co Ltd 相機模組檢測裝置及檢測方法
JP6118102B2 (ja) * 2012-12-21 2017-04-19 東京エレクトロン株式会社 基板位置検出装置及びこれを用いた基板処理装置、成膜装置
GB201301124D0 (en) * 2013-01-22 2013-03-06 Oxford Instr Nanotechnology Tools Ltd Substrate carrier
JP5535347B1 (ja) 2013-02-04 2014-07-02 エピクルー株式会社 撮像装置、半導体製造装置および半導体製造方法
WO2014144533A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Position and temperature monitoring of ald platen susceptor
KR101686032B1 (ko) * 2013-03-28 2016-12-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
KR101452105B1 (ko) * 2013-04-18 2014-10-16 세메스 주식회사 원형 기판의 위치 확인 방법
JP6114629B2 (ja) 2013-05-27 2017-04-12 東京エレクトロン株式会社 回転可能状態検出装置及び回転可能状態検出方法、並びにこれを用いた基板処理装置及び基板処理方法
JP6114708B2 (ja) * 2013-05-27 2017-04-12 東京エレクトロン株式会社 基板脱離検出装置及び基板脱離検出方法、並びにこれらを用いた基板処理装置及び基板処理方法
JP2014239093A (ja) * 2013-06-06 2014-12-18 信越半導体株式会社 枚葉式気相成長装置用サセプタ、枚葉式気相成長装置及びそれを用いた枚葉式気相成長方法
DE102013111165A1 (de) 2013-10-09 2015-04-09 Aixtron Se Vorrichtung und Verfahren zur Bestimmung der Drehlage eines Suszeptors in einer Prozesskammer
KR102173047B1 (ko) * 2013-10-10 2020-11-03 삼성디스플레이 주식회사 기상 증착 장치
JP6262115B2 (ja) 2014-02-10 2018-01-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TW201629264A (zh) 2015-01-22 2016-08-16 應用材料股份有限公司 用於間隙偵測的智能止動器及控制機制
JP6332115B2 (ja) * 2015-04-06 2018-05-30 株式会社ダイフク 物品収納設備
JP6548586B2 (ja) 2016-02-03 2019-07-24 東京エレクトロン株式会社 成膜方法
US9885002B2 (en) * 2016-04-29 2018-02-06 Emerson Climate Technologies, Inc. Carbon dioxide co-fluid
US10276455B2 (en) 2016-07-29 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for measurement of semiconductor device fabrication tool implement
JP6618876B2 (ja) * 2016-09-26 2019-12-11 株式会社ニューフレアテクノロジー 基板処理装置、搬送方法およびサセプタ
JP6733516B2 (ja) 2016-11-21 2020-08-05 東京エレクトロン株式会社 半導体装置の製造方法
US10651067B2 (en) * 2017-01-26 2020-05-12 Brooks Automation, Inc. Method and apparatus for substrate transport apparatus position compensation
JP6763321B2 (ja) * 2017-03-01 2020-09-30 東京エレクトロン株式会社 自転検出用冶具、基板処理装置及び基板処理装置の運転方法
JP6783185B2 (ja) * 2017-05-15 2020-11-11 東京エレクトロン株式会社 検査装置
JP7029914B2 (ja) * 2017-09-25 2022-03-04 東京エレクトロン株式会社 基板処理装置
JP7035461B2 (ja) * 2017-11-07 2022-03-15 東京エレクトロン株式会社 リリーフバルブ及び基板処理装置
JP7117841B2 (ja) * 2017-12-12 2022-08-15 芝浦メカトロニクス株式会社 ワーク検出装置、成膜装置及びワーク検出方法
JP7065949B2 (ja) * 2018-04-23 2022-05-12 東京エレクトロン株式会社 測定方法および測定装置
KR20190124610A (ko) * 2018-04-26 2019-11-05 캐논 톡키 가부시키가이샤 기판 반송 시스템, 전자 디바이스 제조장치 및 전자 디바이스 제조방법
JP7224254B2 (ja) 2019-07-17 2023-02-17 東京エレクトロン株式会社 基板処理装置、情報処理装置、及び基板処理方法
CN110459499B (zh) * 2019-08-16 2021-09-17 上海知昊电子科技有限公司 一种晶圆位置侦测系统
US11295975B2 (en) * 2019-09-13 2022-04-05 Brooks Automation Us, Llc Method and apparatus for substrate alignment
CN113834400B (zh) * 2020-06-23 2022-11-15 长鑫存储技术有限公司 位置检测判断装置、校准装置、方法及系统
US11263755B2 (en) * 2020-07-17 2022-03-01 Nanya Technology Corporation Alert device and alert method thereof
JP7749329B2 (ja) * 2021-03-01 2025-10-06 東京エレクトロン株式会社 回転テーブルの制御方法及び処理装置
JP7624331B2 (ja) * 2021-03-17 2025-01-30 芝浦メカトロニクス株式会社 測定ツール、基板処理装置及び基板製造方法
TWI782675B (zh) * 2021-08-25 2022-11-01 辛耘企業股份有限公司 工件處理系統、距離測量裝置及工件放置路徑設定方法
CN114300404B (zh) * 2021-12-30 2025-10-10 北京北方华创微电子装备有限公司 校准装置及校准方法
JP7831936B2 (ja) 2022-09-12 2026-03-17 東京エレクトロン株式会社 基板処理装置、基板処理方法及びプログラム
US12211195B2 (en) * 2022-09-21 2025-01-28 Applied Materials, Inc. Edge defect detection via image analytics
CN119061384B (zh) * 2023-05-30 2025-11-11 北京北方华创微电子装备有限公司 半导体工艺腔室和半导体工艺设备
JP2025127732A (ja) 2024-02-21 2025-09-02 東京エレクトロン株式会社 基板処理装置、および位置検出方法
CN119340243B (zh) * 2024-10-24 2026-03-20 北京北方华创微电子装备有限公司 测量装置及半导体工艺设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280287A (ja) 2001-03-19 2002-09-27 Nikon Corp 位置検出方法、位置検出装置、露光方法、露光装置、及びデバイス製造方法
JP2004170238A (ja) 2002-11-20 2004-06-17 Matsushita Electric Ind Co Ltd ディスプレイパネルの点灯検査装置
KR20100028497A (ko) * 2008-09-04 2010-03-12 도쿄엘렉트론가부시키가이샤 성막 장치, 기판 처리 장치, 성막 방법 및 컴퓨터 판독 가능한 기록 매체
KR20100056393A (ko) * 2008-11-19 2010-05-27 도쿄엘렉트론가부시키가이샤 기판 위치 검출 장치, 기판 위치 검출 방법, 성막 장치, 성막 방법 및 컴퓨터 판독 가능 기억 매체

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220454A (ja) * 1988-02-27 1989-09-04 Nitto Denko Corp フレームアライメント装置
JPH0513537A (ja) * 1991-07-01 1993-01-22 Fujitsu Ltd 画像処理用照明装置
JP4402811B2 (ja) * 2000-05-26 2010-01-20 東京エレクトロン株式会社 被処理体の搬送システムおよび被処理体の位置ずれ量の検出方法
JP4068588B2 (ja) * 2003-03-31 2008-03-26 シーシーエス株式会社 光照射装置
JP4558417B2 (ja) * 2004-09-01 2010-10-06 有限会社シマテック 照明制御装置
DE602005024856D1 (de) * 2004-12-13 2010-12-30 Panasonic Corp Datenträger-ladeeinrichtng
JP2007107945A (ja) * 2005-10-12 2007-04-26 Olympus Corp 基板検査装置
JP4656440B2 (ja) * 2007-02-13 2011-03-23 東京エレクトロン株式会社 基板位置検出装置及びその撮像手段位置調整方法
JP5120017B2 (ja) * 2007-05-15 2013-01-16 東京エレクトロン株式会社 プローブ装置
JP5088167B2 (ja) * 2008-02-22 2012-12-05 東京エレクトロン株式会社 プローブ装置、プロービング方法及び記憶媒体
JP4607994B2 (ja) * 2008-11-25 2011-01-05 ローツェ株式会社 円盤状物の位置決め方法並びに、その方法を使用する円盤状物の位置決め装置、搬送装置および半導体製造設備

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280287A (ja) 2001-03-19 2002-09-27 Nikon Corp 位置検出方法、位置検出装置、露光方法、露光装置、及びデバイス製造方法
JP2004170238A (ja) 2002-11-20 2004-06-17 Matsushita Electric Ind Co Ltd ディスプレイパネルの点灯検査装置
KR20100028497A (ko) * 2008-09-04 2010-03-12 도쿄엘렉트론가부시키가이샤 성막 장치, 기판 처리 장치, 성막 방법 및 컴퓨터 판독 가능한 기록 매체
KR20100056393A (ko) * 2008-11-19 2010-05-27 도쿄엘렉트론가부시키가이샤 기판 위치 검출 장치, 기판 위치 검출 방법, 성막 장치, 성막 방법 및 컴퓨터 판독 가능 기억 매체

Also Published As

Publication number Publication date
JP2012094814A (ja) 2012-05-17
KR20120032447A (ko) 2012-04-05
US8854449B2 (en) 2014-10-07
US20120075460A1 (en) 2012-03-29
TWI476859B (zh) 2015-03-11
CN102420154A (zh) 2012-04-18
TW201234515A (en) 2012-08-16
JP5524139B2 (ja) 2014-06-18
CN102420154B (zh) 2016-01-06

Similar Documents

Publication Publication Date Title
KR101454068B1 (ko) 기판 위치 검출 장치, 이것을 구비하는 성막 장치 및 기판 위치 검출 방법
JP2010153769A (ja) 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US10615066B2 (en) Substrate warping monitoring device and substrate processing apparatus using the same, and substrate warping monitoring method
KR102880763B1 (ko) 열적 에칭을 위한 신속하고 정확한 온도 제어
KR102354048B1 (ko) 기판 휨 검출 장치 및 기판 휨 검출 방법, 그리고 이들을 사용한 기판 처리 장치 및 기판 처리 방법
KR101685243B1 (ko) 기판 위치 검출 장치 및 이것을 이용한 기판 처리 장치, 성막 장치
JP7483795B2 (ja) 調整可能／交換可能なエッジ結合リングのための検出システム
JP6114708B2 (ja) 基板脱離検出装置及び基板脱離検出方法、並びにこれらを用いた基板処理装置及び基板処理方法
KR20100028497A (ko) 성막 장치, 기판 처리 장치, 성막 방법 및 컴퓨터 판독 가능한 기록 매체
US9607389B2 (en) Alignment apparatus
JP3625761B2 (ja) 膜厚測定装置及びその方法
JP2007258734A (ja) シャワーヘッド構造及び成膜処理装置
CN104737269A (zh) 基板定向腔室
US20260022972A1 (en) Reference wafer for high fidelity in-situ temperature metrology calibration
US20240320837A1 (en) Position detection method and substrate processing apparatus
JP2025127732A (ja) 基板処理装置、および位置検出方法
JP2026072136A (ja) 基板処理装置及び基板処理方法
KR20260056892A (ko) 기판 처리 장치 및 기판 처리 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20170920

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20181004

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20191001

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20201008

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20211005

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20220916

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000