KR101451468B1 - 정전류 회로 및 기준 전압 회로 - Google Patents

정전류 회로 및 기준 전압 회로 Download PDF

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Publication number
KR101451468B1
KR101451468B1 KR1020110122773A KR20110122773A KR101451468B1 KR 101451468 B1 KR101451468 B1 KR 101451468B1 KR 1020110122773 A KR1020110122773 A KR 1020110122773A KR 20110122773 A KR20110122773 A KR 20110122773A KR 101451468 B1 KR101451468 B1 KR 101451468B1
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South Korea
Prior art keywords
terminal
circuit
nmos transistor
constant current
type nmos
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Korean (ko)
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KR20120056222A (ko
Inventor
유지 고바야시
다카시 이무라
마사카즈 스기우라
아츠시 이가라시
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세이코 인스트루 가부시키가이샤
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/575—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
KR1020110122773A 2010-11-24 2011-11-23 정전류 회로 및 기준 전압 회로 Active KR101451468B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-261718 2010-11-24
JP2010261718A JP5706674B2 (ja) 2010-11-24 2010-11-24 定電流回路及び基準電圧回路

Publications (2)

Publication Number Publication Date
KR20120056222A KR20120056222A (ko) 2012-06-01
KR101451468B1 true KR101451468B1 (ko) 2014-10-15

Family

ID=46063794

Family Applications (1)

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KR1020110122773A Active KR101451468B1 (ko) 2010-11-24 2011-11-23 정전류 회로 및 기준 전압 회로

Country Status (4)

Country Link
US (1) US8476967B2 (enExample)
JP (1) JP5706674B2 (enExample)
KR (1) KR101451468B1 (enExample)
TW (1) TWI564690B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8878601B2 (en) * 2012-05-31 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Power supply circuit with positive and negative feedback loops
KR20140071176A (ko) 2012-12-03 2014-06-11 현대자동차주식회사 전류 발생 회로
JP6321411B2 (ja) * 2014-03-13 2018-05-09 エイブリック株式会社 電圧検出回路
JP6242274B2 (ja) 2014-04-14 2017-12-06 ルネサスエレクトロニクス株式会社 バンドギャップリファレンス回路及びそれを備えた半導体装置
CN104267774B (zh) * 2014-09-01 2016-02-10 长沙景嘉微电子股份有限公司 一种线性电源
JP6672067B2 (ja) * 2016-05-02 2020-03-25 新日本無線株式会社 安定化電源回路
JP2017215638A (ja) 2016-05-30 2017-12-07 ラピスセミコンダクタ株式会社 定電流回路及び半導体装置
JP7075172B2 (ja) * 2017-06-01 2022-05-25 エイブリック株式会社 基準電圧回路及び半導体装置
US10585447B1 (en) * 2018-11-09 2020-03-10 Dialog Semiconductor (Uk) Limited Voltage generator
US11353903B1 (en) * 2021-03-31 2022-06-07 Silicon Laboratories Inc. Voltage reference circuit
US11614763B1 (en) * 2022-01-04 2023-03-28 Qualcomm Incorporated Reference voltage generator based on threshold voltage difference of field effect transistors
CN117032378B (zh) * 2023-08-24 2024-07-26 无锡迈尔斯通集成电路有限公司 一种基于耗尽型mos管的低功耗ldo电路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034567A (en) * 1997-02-27 2000-03-07 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device provided with a differential amplifier
JP2006338434A (ja) 2005-06-03 2006-12-14 New Japan Radio Co Ltd 基準電圧発生回路
JP2007140799A (ja) 2005-11-16 2007-06-07 Univ Waseda リファレンス回路
JP2007188245A (ja) 2006-01-12 2007-07-26 Toshiba Corp 基準電圧発生回路および半導体集積装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1179823B (it) * 1984-11-22 1987-09-16 Cselt Centro Studi Lab Telecom Generatore di tensione differenziale di rifferimento per circuiti integrati ad alimentazione singola in tecnologia nmos
JP2803291B2 (ja) 1990-02-15 1998-09-24 日本電気株式会社 バイアス回路
JPH04111008A (ja) * 1990-08-30 1992-04-13 Oki Electric Ind Co Ltd 定電流源回路
JP3118929B2 (ja) * 1992-01-27 2000-12-18 松下電工株式会社 定電圧回路
JP2964775B2 (ja) * 1992-05-08 1999-10-18 日本電気株式会社 参照電圧発生回路
US5686824A (en) * 1996-09-27 1997-11-11 National Semiconductor Corporation Voltage regulator with virtually zero power dissipation
JP3638530B2 (ja) * 2001-02-13 2005-04-13 Ｎｅｃエレクトロニクス株式会社 基準電流回路及び基準電圧回路
JP5242367B2 (ja) * 2008-12-24 2013-07-24 セイコーインスツル株式会社 基準電圧回路
WO2010109892A1 (ja) * 2009-03-26 2010-09-30 株式会社Sumco 半導体基板、半導体装置及び半導体基板の製造方法
JP5506594B2 (ja) * 2009-09-25 2014-05-28 セイコーインスツル株式会社 基準電圧回路
US8188785B2 (en) * 2010-02-04 2012-05-29 Semiconductor Components Industries, Llc Mixed-mode circuits and methods of producing a reference current and a reference voltage

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034567A (en) * 1997-02-27 2000-03-07 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device provided with a differential amplifier
JP2006338434A (ja) 2005-06-03 2006-12-14 New Japan Radio Co Ltd 基準電圧発生回路
JP2007140799A (ja) 2005-11-16 2007-06-07 Univ Waseda リファレンス回路
JP2007188245A (ja) 2006-01-12 2007-07-26 Toshiba Corp 基準電圧発生回路および半導体集積装置

Also Published As

Publication number Publication date
TW201235815A (en) 2012-09-01
CN102478877A (zh) 2012-05-30
JP2012113503A (ja) 2012-06-14
JP5706674B2 (ja) 2015-04-22
TWI564690B (zh) 2017-01-01
KR20120056222A (ko) 2012-06-01
US8476967B2 (en) 2013-07-02
US20120126873A1 (en) 2012-05-24

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