KR101447494B1 - 지멘스형 공정으로 일체화되는 유동상 반응기를 사용한 규소 생산 - Google Patents

지멘스형 공정으로 일체화되는 유동상 반응기를 사용한 규소 생산 Download PDF

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KR101447494B1
KR101447494B1 KR1020097006542A KR20097006542A KR101447494B1 KR 101447494 B1 KR101447494 B1 KR 101447494B1 KR 1020097006542 A KR1020097006542 A KR 1020097006542A KR 20097006542 A KR20097006542 A KR 20097006542A KR 101447494 B1 KR101447494 B1 KR 101447494B1
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fluidized bed
bed reactor
siemens
reactor
trichlorosilane
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KR20090064402A (ko
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알비드 네일 알비슨
마이클 몰나
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헴로크세미컨덕터코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/129—Energy recovery, e.g. by cogeneration, H2recovery or pressure recovery turbines

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
KR1020097006542A 2006-08-30 2007-06-14 지멘스형 공정으로 일체화되는 유동상 반응기를 사용한 규소 생산 Expired - Fee Related KR101447494B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/512,853 2006-08-30
US11/512,853 US7935327B2 (en) 2006-08-30 2006-08-30 Silicon production with a fluidized bed reactor integrated into a siemens-type process
PCT/US2007/013905 WO2008027101A1 (en) 2006-08-30 2007-06-14 Silicon production with a fluidized bed reactor integrated into a siemens-type process

Publications (2)

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KR20090064402A KR20090064402A (ko) 2009-06-18
KR101447494B1 true KR101447494B1 (ko) 2014-10-06

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Country Link
US (2) US7935327B2 (https=)
EP (1) EP2057095A1 (https=)
JP (1) JP5367573B2 (https=)
KR (1) KR101447494B1 (https=)
CN (1) CN101541678A (https=)
AU (1) AU2007290858B2 (https=)
CA (1) CA2661985C (https=)
RU (1) RU2428377C2 (https=)
UA (1) UA95974C2 (https=)
WO (1) WO2008027101A1 (https=)

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US9156705B2 (en) 2010-12-23 2015-10-13 Sunedison, Inc. Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
CN102120577A (zh) * 2011-03-24 2011-07-13 天津大学 一种多晶硅还原炉预升温系统及预升温方法
EP2530052A1 (de) * 2011-06-01 2012-12-05 HEI Eco Technology Verfahren zur Herstellung von Siliziumtetrachlorid und Verfahren zur Herstellung von Solarsilizium
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KR101281102B1 (ko) * 2011-12-19 2013-07-02 한화케미칼 주식회사 폴리실리콘의 제조 방법
JP2015506834A (ja) 2012-01-30 2015-03-05 ヘムロック・セミコンダクター・コーポレーション 反応器内の表面を補修及び／又は保護する方法
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GB2028289A (en) 1978-08-18 1980-03-05 Schumacher Co J C Producing silicon
US4491604A (en) 1982-12-27 1985-01-01 Lesk Israel A Silicon deposition process
JPH0680412A (ja) * 1992-08-31 1994-03-22 Toagosei Chem Ind Co Ltd 多結晶シリコンの製造方法
JP2005314191A (ja) * 2004-04-30 2005-11-10 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンの製造方法

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Publication number Publication date
KR20090064402A (ko) 2009-06-18
US20110189074A1 (en) 2011-08-04
CA2661985C (en) 2014-05-27
CA2661985A1 (en) 2008-03-06
AU2007290858A1 (en) 2008-03-06
JP5367573B2 (ja) 2013-12-11
RU2428377C2 (ru) 2011-09-10
US20080056979A1 (en) 2008-03-06
EP2057095A1 (en) 2009-05-13
US8609058B2 (en) 2013-12-17
WO2008027101A9 (en) 2009-05-14
CN101541678A (zh) 2009-09-23
AU2007290858B2 (en) 2012-12-13
RU2009111218A (ru) 2010-10-10
UA95974C2 (ru) 2011-09-26
US7935327B2 (en) 2011-05-03
WO2008027101A1 (en) 2008-03-06
JP2010502542A (ja) 2010-01-28

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