KR101420571B1 - 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법 - Google Patents

드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법 Download PDF

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Publication number
KR101420571B1
KR101420571B1 KR1020130079083A KR20130079083A KR101420571B1 KR 101420571 B1 KR101420571 B1 KR 101420571B1 KR 1020130079083 A KR1020130079083 A KR 1020130079083A KR 20130079083 A KR20130079083 A KR 20130079083A KR 101420571 B1 KR101420571 B1 KR 101420571B1
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KR
South Korea
Prior art keywords
dry film
hydroxide
film resist
compound
weight
Prior art date
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KR1020130079083A
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English (en)
Korean (ko)
Inventor
조은인
오용수
이수흥
손명찬
지영식
이태곤
이경상
정세환
김병욱
윤석일
정종현
허순범
황종원
Original Assignee
주식회사 동진쎄미켐
삼성전기주식회사
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Priority to KR1020130079083A priority Critical patent/KR101420571B1/ko
Priority to CN201410259171.6A priority patent/CN104281017A/zh
Priority to JP2014135548A priority patent/JP2015014791A/ja
Priority to TW103122788A priority patent/TW201502723A/zh
Application granted granted Critical
Publication of KR101420571B1 publication Critical patent/KR101420571B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G03F7/0955—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Architecture (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Detergent Compositions (AREA)
KR1020130079083A 2013-07-05 2013-07-05 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법 KR101420571B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020130079083A KR101420571B1 (ko) 2013-07-05 2013-07-05 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법
CN201410259171.6A CN104281017A (zh) 2013-07-05 2014-06-11 干膜抗蚀剂剥离剂组合物以及使用该组合物的干膜抗蚀剂的除去方法
JP2014135548A JP2015014791A (ja) 2013-07-05 2014-07-01 ドライフィルムレジスト剥離剤組成物及びそれを用いたドライフィルムレジストの除去方法
TW103122788A TW201502723A (zh) 2013-07-05 2014-07-02 乾膜光阻脫模劑組成物及使用其之脫模方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130079083A KR101420571B1 (ko) 2013-07-05 2013-07-05 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법

Publications (1)

Publication Number Publication Date
KR101420571B1 true KR101420571B1 (ko) 2014-07-16

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KR1020130079083A KR101420571B1 (ko) 2013-07-05 2013-07-05 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법

Country Status (4)

Country Link
JP (1) JP2015014791A (ja)
KR (1) KR101420571B1 (ja)
CN (1) CN104281017A (ja)
TW (1) TW201502723A (ja)

Cited By (3)

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KR101567407B1 (ko) * 2015-03-27 2015-11-10 주식회사 심텍 열경화성 솔더마스크 제거용 조성물과 이를 이용한 레지스트 패턴의 형성 방법
KR20190083545A (ko) * 2018-01-04 2019-07-12 삼성전기주식회사 드라이필름 레지스트 제거용 박리조성물 및 이를 이용한 드라이필름 레지스트의 박리방법
WO2019203529A1 (ko) * 2018-04-17 2019-10-24 엘티씨 (주) 드라이필름 레지스트 박리액 조성물

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CN104427781B (zh) * 2013-09-11 2019-05-17 花王株式会社 树脂掩模层用洗涤剂组合物及电路基板的制造方法
CN109074005A (zh) * 2016-05-13 2018-12-21 株式会社杰希优 抗蚀剂的剥离液
KR102546332B1 (ko) * 2016-11-17 2023-06-21 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 스트리핑 공정
CN109778210A (zh) * 2018-08-09 2019-05-21 苏州纳勒电子科技有限公司 一种用于电路板上的去膜液
CN112711176A (zh) * 2020-12-17 2021-04-27 芯越微电子材料(嘉兴)有限公司 一种适用半导体领域的光刻胶剥离液及制备方法
CN115820351A (zh) * 2022-12-19 2023-03-21 芯越微电子材料(嘉兴)有限公司 半导体晶圆基底清洗液组合物及其使用方法

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KR20190083545A (ko) * 2018-01-04 2019-07-12 삼성전기주식회사 드라이필름 레지스트 제거용 박리조성물 및 이를 이용한 드라이필름 레지스트의 박리방법
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WO2019203529A1 (ko) * 2018-04-17 2019-10-24 엘티씨 (주) 드라이필름 레지스트 박리액 조성물
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Publication number Publication date
JP2015014791A (ja) 2015-01-22
CN104281017A (zh) 2015-01-14
TW201502723A (zh) 2015-01-16

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