CN104281017A - 干膜抗蚀剂剥离剂组合物以及使用该组合物的干膜抗蚀剂的除去方法 - Google Patents

干膜抗蚀剂剥离剂组合物以及使用该组合物的干膜抗蚀剂的除去方法 Download PDF

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Publication number
CN104281017A
CN104281017A CN201410259171.6A CN201410259171A CN104281017A CN 104281017 A CN104281017 A CN 104281017A CN 201410259171 A CN201410259171 A CN 201410259171A CN 104281017 A CN104281017 A CN 104281017A
Authority
CN
China
Prior art keywords
dry film
film photoresist
remover combination
photoresist remover
combination according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410259171.6A
Other languages
English (en)
Chinese (zh)
Inventor
曹恩仁
吴龙洙
李秀兴
孙命赞
池营植
李胎坤
李庚相
郑世桓
金柄郁
尹锡壹
郑宗铉
许舜范
黄钟源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electro Mechanics Co Ltd
Dongjin Semichem Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd, Dongjin Semichem Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of CN104281017A publication Critical patent/CN104281017A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G03F7/0955—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
CN201410259171.6A 2013-07-05 2014-06-11 干膜抗蚀剂剥离剂组合物以及使用该组合物的干膜抗蚀剂的除去方法 Pending CN104281017A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0079083 2013-07-05
KR1020130079083A KR101420571B1 (ko) 2013-07-05 2013-07-05 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법

Publications (1)

Publication Number Publication Date
CN104281017A true CN104281017A (zh) 2015-01-14

Family

ID=51742409

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410259171.6A Pending CN104281017A (zh) 2013-07-05 2014-06-11 干膜抗蚀剂剥离剂组合物以及使用该组合物的干膜抗蚀剂的除去方法

Country Status (4)

Country Link
JP (1) JP2015014791A (ja)
KR (1) KR101420571B1 (ja)
CN (1) CN104281017A (ja)
TW (1) TW201502723A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109778210A (zh) * 2018-08-09 2019-05-21 苏州纳勒电子科技有限公司 一种用于电路板上的去膜液
CN112711176A (zh) * 2020-12-17 2021-04-27 芯越微电子材料(嘉兴)有限公司 一种适用半导体领域的光刻胶剥离液及制备方法

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JP6412377B2 (ja) * 2013-09-11 2018-10-24 花王株式会社 樹脂マスク層用洗浄剤組成物及び回路基板の製造方法
KR101567407B1 (ko) * 2015-03-27 2015-11-10 주식회사 심텍 열경화성 솔더마스크 제거용 조성물과 이를 이용한 레지스트 패턴의 형성 방법
JPWO2017195453A1 (ja) * 2016-05-13 2019-04-04 株式会社Ｊｃｕ レジストの剥離液
KR102546332B1 (ko) * 2016-11-17 2023-06-21 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 스트리핑 공정
KR102029442B1 (ko) * 2018-01-04 2019-10-08 삼성전기주식회사 드라이필름 레지스트 제거용 박리조성물 및 이를 이용한 드라이필름 레지스트의 박리방법
KR102224907B1 (ko) * 2018-04-17 2021-03-09 엘티씨 (주) 드라이필름 레지스트 박리액 조성물

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EP1031884A2 (en) * 1999-02-25 2000-08-30 Mitsubishi Gas Chemical Company, Inc. Resist stripping agent and process of producing semiconductor devices using the same
CN1428659A (zh) * 2001-12-27 2003-07-09 东京应化工业株式会社 光刻胶用剥离液和使用该剥离液的光刻胶剥离方法
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US20130017636A1 (en) * 2011-07-14 2013-01-17 Samsung Electronics Co., Ltd. Composition for removing a photoresist and method of manufacturing a thin-film transistor substrate using the composition

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US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
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US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
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US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging
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JP4499751B2 (ja) * 2006-11-21 2010-07-07 エア プロダクツ アンド ケミカルズ インコーポレイテッド フォトレジスト、エッチ残留物及びｂａｒｃを除去するための配合物及び同配合物を含む方法
KR101488265B1 (ko) * 2007-09-28 2015-02-02 삼성디스플레이 주식회사 박리 조성물 및 박리 방법
JP5723699B2 (ja) * 2011-02-25 2015-05-27 富士フイルム株式会社 遮光性組成物、遮光性組成物の製造方法、ソルダレジスト、パターン形成方法、及び固体撮像素子
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EP1031884A2 (en) * 1999-02-25 2000-08-30 Mitsubishi Gas Chemical Company, Inc. Resist stripping agent and process of producing semiconductor devices using the same
CN1428659A (zh) * 2001-12-27 2003-07-09 东京应化工业株式会社 光刻胶用剥离液和使用该剥离液的光刻胶剥离方法
CN1904016A (zh) * 2005-06-23 2007-01-31 气体产品与化学公司 除残留物的含有阳离子盐的组合物及其使用方法
KR20090009787A (ko) * 2006-04-12 2009-01-23 샌디스크 코포레이션 프로그램 혼란의 영향을 감소시키는 방법
US20130017636A1 (en) * 2011-07-14 2013-01-17 Samsung Electronics Co., Ltd. Composition for removing a photoresist and method of manufacturing a thin-film transistor substrate using the composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109778210A (zh) * 2018-08-09 2019-05-21 苏州纳勒电子科技有限公司 一种用于电路板上的去膜液
CN112711176A (zh) * 2020-12-17 2021-04-27 芯越微电子材料(嘉兴)有限公司 一种适用半导体领域的光刻胶剥离液及制备方法

Also Published As

Publication number Publication date
TW201502723A (zh) 2015-01-16
JP2015014791A (ja) 2015-01-22
KR101420571B1 (ko) 2014-07-16

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