KR101403818B1 - 성막 장치 및 성막 방법 - Google Patents

성막 장치 및 성막 방법 Download PDF

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Publication number
KR101403818B1
KR101403818B1 KR1020100134403A KR20100134403A KR101403818B1 KR 101403818 B1 KR101403818 B1 KR 101403818B1 KR 1020100134403 A KR1020100134403 A KR 1020100134403A KR 20100134403 A KR20100134403 A KR 20100134403A KR 101403818 B1 KR101403818 B1 KR 101403818B1
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South Korea
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substrate
rotary table
reaction gas
wafer
reaction
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Korean (ko)
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KR20110074700A (ko
Inventor
유끼오 오오이즈미
마나부 혼마
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도쿄엘렉트론가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020100134403A 2009-12-25 2010-12-24 성막 장치 및 성막 방법 Active KR101403818B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-296182 2009-12-25
JP2009296182 2009-12-25

Publications (2)

Publication Number Publication Date
KR20110074700A KR20110074700A (ko) 2011-07-01
KR101403818B1 true KR101403818B1 (ko) 2014-06-03

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Country Status (5)

Country Link
US (1) US8034723B2 (enExample)
JP (1) JP5527197B2 (enExample)
KR (1) KR101403818B1 (enExample)
CN (1) CN102108502B (enExample)
TW (1) TWI482872B (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9416448B2 (en) * 2008-08-29 2016-08-16 Tokyo Electron Limited Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP5107185B2 (ja) 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
US9297072B2 (en) 2008-12-01 2016-03-29 Tokyo Electron Limited Film deposition apparatus
JP5131240B2 (ja) * 2009-04-09 2013-01-30 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5257328B2 (ja) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
JP5553588B2 (ja) * 2009-12-10 2014-07-16 東京エレクトロン株式会社 成膜装置
JP2012171179A (ja) * 2011-02-21 2012-09-10 Seiko Epson Corp 印刷装置
JP5948026B2 (ja) 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
US20130196078A1 (en) * 2012-01-31 2013-08-01 Joseph Yudovsky Multi-Chamber Substrate Processing System
JP5936394B2 (ja) * 2012-03-14 2016-06-22 日立造船株式会社 蒸着装置
JP5861583B2 (ja) * 2012-07-13 2016-02-16 東京エレクトロン株式会社 成膜装置及び成膜方法
JP6040609B2 (ja) * 2012-07-20 2016-12-07 東京エレクトロン株式会社 成膜装置及び成膜方法
US9385017B2 (en) * 2012-08-06 2016-07-05 Nordson Corporation Apparatus and methods for handling workpieces of different sizes
US20140065303A1 (en) * 2012-08-31 2014-03-06 Robert Dennis Grejda Holding device for optical element
US9230815B2 (en) 2012-10-26 2016-01-05 Appled Materials, Inc. Methods for depositing fluorine/carbon-free conformal tungsten
US11043386B2 (en) 2012-10-26 2021-06-22 Applied Materials, Inc. Enhanced spatial ALD of metals through controlled precursor mixing
KR20150134312A (ko) 2012-11-12 2015-12-01 드머레이 엘엘씨 단열 평판형 도파로 커플러 변환기
JP6010451B2 (ja) * 2012-12-21 2016-10-19 東京エレクトロン株式会社 成膜方法
JP6115244B2 (ja) * 2013-03-28 2017-04-19 東京エレクトロン株式会社 成膜装置
JP6096588B2 (ja) * 2013-05-21 2017-03-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6114708B2 (ja) * 2013-05-27 2017-04-12 東京エレクトロン株式会社 基板脱離検出装置及び基板脱離検出方法、並びにこれらを用いた基板処理装置及び基板処理方法
JP6287240B2 (ja) 2014-01-17 2018-03-07 東京エレクトロン株式会社 真空処理装置及び真空処理方法
JP6262115B2 (ja) 2014-02-10 2018-01-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6303592B2 (ja) 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
CN105336655A (zh) * 2014-06-12 2016-02-17 北京北方微电子基地设备工艺研究中心有限责任公司 一种承载装置及半导体加工设备
CN104760325B (zh) * 2014-12-30 2017-04-12 苏州市博奥塑胶电子有限公司 一种连续加工平台
JP6276428B2 (ja) * 2015-01-22 2018-02-07 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、及びサセプタ
US20160217970A1 (en) * 2015-01-28 2016-07-28 Advanced Ion Beam Technology, Inc. Ion implanter and method for ion implantation
JP6456712B2 (ja) * 2015-02-16 2019-01-23 東京エレクトロン株式会社 基板保持機構及びこれを用いた基板処理装置
CN105575866A (zh) * 2016-01-06 2016-05-11 京东方科技集团股份有限公司 搬送装置、搬送方法及蒸镀设备
JP6548586B2 (ja) 2016-02-03 2019-07-24 東京エレクトロン株式会社 成膜方法
TWI729101B (zh) 2016-04-02 2021-06-01 美商應用材料股份有限公司 用於旋轉料架基座中的晶圓旋轉的設備及方法
TWI734770B (zh) 2016-04-24 2021-08-01 美商應用材料股份有限公司 用於防止空間ald處理腔室中之背側沉積的設備
US11015246B2 (en) 2016-04-24 2021-05-25 Applied Materials, Inc. Apparatus and methods for depositing ALD films with enhanced chemical exchange
KR102204637B1 (ko) * 2016-06-03 2021-01-19 어플라이드 머티어리얼스, 인코포레이티드 챔버 내부의 유동을 확산시키는 것에 의한 더 낮은 입자 수 및 더 양호한 웨이퍼 품질을 위한 효과적이고 새로운 설계
JP6733516B2 (ja) 2016-11-21 2020-08-05 東京エレクトロン株式会社 半導体装置の製造方法
CN110692130B (zh) * 2017-05-31 2024-02-13 朗姆研究公司 用于可调/可更换边缘耦合环的检测系统
JP6896588B2 (ja) * 2017-11-06 2021-06-30 株式会社Ｓｃｒｅｅｎホールディングス 基板受渡システムおよび基板受渡方法
TW201946214A (zh) 2018-04-28 2019-12-01 美商應用材料股份有限公司 用於旋轉料架處理腔室的原位晶圓旋轉
KR102516885B1 (ko) * 2018-05-10 2023-03-30 삼성전자주식회사 증착 장비 및 이를 이용한 반도체 장치 제조 방법
CN111977375B (zh) * 2019-05-21 2022-01-18 晶彩科技股份有限公司 薄板输送装置及其方法
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JP7102478B2 (ja) * 2020-09-24 2022-07-19 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、プログラム及び基板処理方法
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080028977A (ko) * 2005-11-29 2008-04-02 동경 엘렉트론 주식회사 열 처리 방법 및 열 처리 장치
KR20090012396A (ko) * 2007-07-30 2009-02-04 주식회사 아이피에스 박막증착장치
KR20090118951A (ko) * 2007-02-12 2009-11-18 도쿄엘렉트론가부시키가이샤 원자층 증착 시스템 및 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03144664A (ja) 1989-10-31 1991-06-20 Mita Ind Co Ltd 自動原稿送り装置
JPH04287912A (ja) 1991-02-19 1992-10-13 Mitsubishi Electric Corp 半導体製造装置
JPH063112A (ja) * 1992-06-24 1994-01-11 N S T:Kk 光学式距離測定方法
JP3144664B2 (ja) 1992-08-29 2001-03-12 東京エレクトロン株式会社 処理装置及び処理方法
JP3239981B2 (ja) 1995-10-20 2001-12-17 東京エレクトロン株式会社 処理装置および処理方法
JPH09147786A (ja) * 1995-11-21 1997-06-06 Advanced Display:Kk 基板保持方法および該方法に用いる基板保持機構
JP3796005B2 (ja) * 1997-05-15 2006-07-12 アプライド マテリアルズ インコーポレイテッド マスク装置及び成膜装置
US6121164A (en) * 1997-10-24 2000-09-19 Applied Materials, Inc. Method for forming low compressive stress fluorinated ozone/TEOS oxide film
US6576062B2 (en) 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
JP4817210B2 (ja) 2000-01-06 2011-11-16 東京エレクトロン株式会社 成膜装置および成膜方法
KR100458982B1 (ko) 2000-08-09 2004-12-03 주성엔지니어링(주) 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법
US7153542B2 (en) 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
CN100541715C (zh) * 2003-04-21 2009-09-16 东京毅力科创株式会社 对被处理基板进行半导体处理的装置
US20060073276A1 (en) 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
JP2007243060A (ja) * 2006-03-10 2007-09-20 Taiyo Nippon Sanso Corp 気相成長装置
US20070218702A1 (en) 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
US20070218701A1 (en) 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
CN100477147C (zh) * 2006-03-16 2009-04-08 东京毅力科创株式会社 基板载置台及基板处理装置
JP2009135202A (ja) * 2007-11-29 2009-06-18 Nuflare Technology Inc 半導体製造装置および半導体製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080028977A (ko) * 2005-11-29 2008-04-02 동경 엘렉트론 주식회사 열 처리 방법 및 열 처리 장치
KR20090118951A (ko) * 2007-02-12 2009-11-18 도쿄엘렉트론가부시키가이샤 원자층 증착 시스템 및 방법
KR20090012396A (ko) * 2007-07-30 2009-02-04 주식회사 아이피에스 박막증착장치

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TWI482872B (zh) 2015-05-01
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