KR101398094B1 - 액정 디스플레이 및 어레이 기판 - Google Patents

액정 디스플레이 및 어레이 기판 Download PDF

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Publication number
KR101398094B1
KR101398094B1 KR1020120044639A KR20120044639A KR101398094B1 KR 101398094 B1 KR101398094 B1 KR 101398094B1 KR 1020120044639 A KR1020120044639 A KR 1020120044639A KR 20120044639 A KR20120044639 A KR 20120044639A KR 101398094 B1 KR101398094 B1 KR 101398094B1
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South Korea
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common electrode
layer
gate metal
via hole
transparent common
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KR1020120044639A
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English (en)
Korean (ko)
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KR20120122961A (ko
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관바오 후이
승진 최
펑 장
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보에 테크놀로지 그룹 컴퍼니 리미티드
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134381—Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1020120044639A 2011-04-29 2012-04-27 액정 디스플레이 및 어레이 기판 KR101398094B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2011201360379U CN202033562U (zh) 2011-04-29 2011-04-29 液晶显示器阵列基板
CN201120136037.9 2011-04-29

Publications (2)

Publication Number Publication Date
KR20120122961A KR20120122961A (ko) 2012-11-07
KR101398094B1 true KR101398094B1 (ko) 2014-05-22

Family

ID=44895853

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120044639A KR101398094B1 (ko) 2011-04-29 2012-04-27 액정 디스플레이 및 어레이 기판

Country Status (5)

Country Link
US (1) US8698149B2 (fr)
EP (1) EP2518558B1 (fr)
JP (1) JP6030333B2 (fr)
KR (1) KR101398094B1 (fr)
CN (1) CN202033562U (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629060B (zh) * 2012-02-22 2014-04-02 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN102769040B (zh) * 2012-07-25 2015-03-04 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及其制作方法、显示装置
CN103576401B (zh) * 2012-08-10 2018-05-08 北京京东方光电科技有限公司 一种阵列基板及其制备方法、显示装置
CN103364987B (zh) * 2013-07-19 2015-11-25 深圳市华星光电技术有限公司 一种阵列基板及显示面板
CN103715135B (zh) * 2013-12-16 2016-04-06 京东方科技集团股份有限公司 一种过孔及其制作方法、阵列基板
CN103913916B (zh) * 2014-04-04 2017-04-05 合肥鑫晟光电科技有限公司 一种阵列基板及其制造方法、液晶显示屏
CN104049392B (zh) * 2014-06-10 2017-01-18 京东方科技集团股份有限公司 防止显示面板异常放电的装置和显示面板制备系统
KR102221845B1 (ko) * 2014-08-27 2021-03-04 삼성디스플레이 주식회사 표시 기판 및 그의 제조방법
KR102232258B1 (ko) * 2014-08-27 2021-03-29 삼성디스플레이 주식회사 표시 기판 및 그의 제조방법
KR102227519B1 (ko) * 2014-08-27 2021-03-16 삼성디스플레이 주식회사 표시 기판 및 그의 제조방법
KR20160129783A (ko) * 2015-04-30 2016-11-09 주식회사 엘지화학 액정 디스플레이 장치 및 이의 제조방법
CN107850811A (zh) * 2015-05-06 2018-03-27 株式会社Lg化学 液晶显示装置
CN107407846B (zh) * 2015-05-08 2021-10-29 株式会社Lg化学 薄膜晶体管基底和包括其的显示装置
US10989946B2 (en) * 2019-02-21 2021-04-27 Innolux Corporation Electronic modulating device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4624737A (en) * 1984-08-21 1986-11-25 Seiko Instruments & Electronics Ltd. Process for producing thin-film transistor
KR100190023B1 (ko) * 1996-02-29 1999-06-01 윤종용 박막트랜지스터-액정표시장치 및 그 제조방법
KR100307385B1 (ko) * 1997-03-05 2001-12-15 구본준, 론 위라하디락사 액정표시장치의구조및그제조방법
KR20060074325A (ko) * 2004-12-27 2006-07-03 삼성전자주식회사 어레이 기판 및 이를 갖는 표시장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259119B1 (en) * 1997-12-18 2001-07-10 Lg. Philips Lcd Co, Ltd. Liquid crystal display and method of manufacturing the same
KR100975734B1 (ko) * 2003-09-08 2010-08-12 엘지디스플레이 주식회사 횡전계방식 액정 표시 장치용 어레이 기판 및 그 제조 방법
KR20060079040A (ko) * 2004-12-31 2006-07-05 엘지.필립스 엘시디 주식회사 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법
JP4801569B2 (ja) * 2005-12-05 2011-10-26 株式会社半導体エネルギー研究所 液晶表示装置
JP2007226175A (ja) 2006-01-26 2007-09-06 Epson Imaging Devices Corp 液晶装置及び電子機器
KR100978263B1 (ko) * 2006-05-12 2010-08-26 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
JP4407677B2 (ja) * 2006-08-11 2010-02-03 エプソンイメージングデバイス株式会社 横電界方式の液晶表示パネル
KR101274706B1 (ko) * 2008-05-16 2013-06-12 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
WO2011043440A1 (fr) * 2009-10-08 2011-04-14 シャープ株式会社 Dispositif d'affichage à cristaux liquides et son procédé de fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4624737A (en) * 1984-08-21 1986-11-25 Seiko Instruments & Electronics Ltd. Process for producing thin-film transistor
KR100190023B1 (ko) * 1996-02-29 1999-06-01 윤종용 박막트랜지스터-액정표시장치 및 그 제조방법
KR100307385B1 (ko) * 1997-03-05 2001-12-15 구본준, 론 위라하디락사 액정표시장치의구조및그제조방법
KR20060074325A (ko) * 2004-12-27 2006-07-03 삼성전자주식회사 어레이 기판 및 이를 갖는 표시장치

Also Published As

Publication number Publication date
EP2518558B1 (fr) 2016-08-24
JP2012234179A (ja) 2012-11-29
US8698149B2 (en) 2014-04-15
US20120273789A1 (en) 2012-11-01
EP2518558A2 (fr) 2012-10-31
EP2518558A3 (fr) 2013-04-17
KR20120122961A (ko) 2012-11-07
CN202033562U (zh) 2011-11-09
JP6030333B2 (ja) 2016-11-24

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