CN107407846B - 薄膜晶体管基底和包括其的显示装置 - Google Patents

薄膜晶体管基底和包括其的显示装置 Download PDF

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CN107407846B
CN107407846B CN201680015775.3A CN201680015775A CN107407846B CN 107407846 B CN107407846 B CN 107407846B CN 201680015775 A CN201680015775 A CN 201680015775A CN 107407846 B CN107407846 B CN 107407846B
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light reflection
reflection reducing
reducing layer
electrode
light
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CN107407846A (zh
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李一翻
黄智泳
李承宪
吴东炫
金起焕
徐汉珉
朴赞亨
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LG Chem Ltd
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LG Chem Ltd
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Abstract

公开了薄膜晶体管基底和包括其的显示装置。薄膜晶体管基底包括：栅电极；源电极；漏电极；和设置在面向栅极线和数据线基底的表面以及与其相反的表面上的光反射减少层，其中光反射减少层满足以下[式1]:(k×t)/λ的0.004至0.22的值(其中k意指光反射减少层的消光系数；t意指光反射减少层的厚度；并且λ意指光的波长)。

Description

薄膜晶体管基底和包括其的显示装置
技术领域
本申请要求于2015年5月8日在韩国知识产权局提交的韩国专利申请第10-2015-0064822号的优先权和权益，其全部内容通过引用并入本文。
本说明书涉及薄膜晶体管基底和包括其的显示装置。
背景技术
薄膜晶体管(TFT)(其为通过将半导体、绝缘体、金属薄膜等依次沉积在基底上而形成的晶体管)通过利用TFT可以形成在大面积基底上的优点而在包括周边元件(包括液晶显示器、激光打印机头等)和图像传感器(包括扫描仪等)的各个领域中均得到开发和商业化。
其中，显示元件需要实现高对比度、高分辨率、色彩显示能力、高速响应性、光学视角等，并且无源矩阵型装置难以提高所有的特性，并且具有信号串扰的问题，但是将作为开关元件的TFT添加至每个像素，由此整体上提高了显示性能。
然而，由于TFT和与其连接的配线电极具有金属特有的高光反射率，所以在显示元件中存在发生眩光现象的问题。
发明内容
技术问题
本说明书提供了薄膜晶体管基底和包括其的显示装置，所述薄膜晶体管基底可应用于能够防止配线电极的眩光现象的显示装置。
技术方案
本说明书的一个实施方案提供了薄膜晶体管基底，包括：
基底；
设置在所述基底上彼此交叉的多条栅极线和多条数据线；
薄膜晶体管，包括与栅极线连接的栅电极、设置在栅电极上以绝缘于所述栅电极的半导体层、与数据线电连接的源电极、和漏电极；以及
光反射减少层，其设置在栅电极、源电极、漏电极、栅极线和数据线的面向基底的平面以及与栅电极、源电极、漏电极、栅极线和数据线的面向基底的平面相反的平面上，
其中对于光反射减少层，下面给出的式1的值满足0.004或更大且0.22或更小。
[式1]
Figure GDA0002566437650000021
在式1中，k表示光反射减少层的消光系数，t表示光反射减少层的厚度，λ表示光的波长。
本说明书的一个实施方案提供了包括薄膜晶体管基底的显示装置。有利效果
根据本说明书的一个实施方案的薄膜晶体管基底控制由形成在基底上的配线电极而带来的光反射率以实现高图像质量显示。
此外，可将根据本说明书的实施方案的薄膜晶体管基底应用至底部发光结构显示装置和顶部发光结构显示装置两者。
附图说明
图1示出了根据本说明书的一个实施方案的薄膜晶体管基底的平面图的一个区域。
图2示出了根据本说明书的实施方案的薄膜晶体管基底的截面。
图3是示出取决于根据实施例1的光反射减少层的波长的n和k值的图。
图4是示出取决于根据比较例1的MoTi层的波长的n和k值的图。
图5示出了实施例1的反射率和比较例1的反射率的比较。
图6示出了实施例13的反射率。
图7示出了实施例14的反射率。
图8和图9示出了在实施例15中制造的结构中应用的反射率和光学常数值。
具体实施方式
在本说明书中，当描述一个要素位于另一个要素上时，所述要素可以“接触”另一个要素，或者两个要素之间可以插入有第三个要素。
在本说明书中，除非存在明确相反的描述，否则措辞“包括”以及其变体例如“包含”将理解为暗示包括所指元件但不排除任何其他元件。
下文中，将对本说明书进行更具体地描述。
在本说明书中，作为统指TV或计算机监视器的术语显示装置包括形成图像的显示元件和支撑所述显示元件的壳体。
在常规显示装置中，黑矩阵已被应用来防止光反射、漏光等。近年来，通过在TFT阵列(COT或COA)上引入称为滤色器的结构(其中滤色器与薄膜晶体管一起形成在阵列基底上)，已开发了不使用上述黑矩阵的结构。在引入不使用黑矩阵的结构的情况下，可以获得提高显示装置的透射率、提高亮度并且改善背光效率的效果。然而，在没有黑矩阵的结构的情况下，包括在显示装置中的金属电极可能露出的区域增加，这导致由于金属电极的颜色和反射特性引起的问题。特别地，近年来，显示装置的尺寸已增加且分辨率已增加，因此需要能够减少由包括在显示装置中的金属电极引起的反射和色彩特性的技术。
因此，本发明人发现如下情况：在包括导电层如金属的显示装置中，导电层的可见性(visibility)对导电层的光反射和衍射特性具有主要影响，并且旨在改善该情况。
根据本说明书的一个实施方案的液晶显示装置将光反射减少层引入到包括栅电极、源电极、漏电极、栅极线和数据线的配线电极上以显著改善取决于配线电极的高反射率的可见性而引起的劣化。
此外，在使用光反射减少层的情况下，具有可以不在对应于薄膜晶体管的区域中形成黑矩阵的优点。
具体地，由于光反射减少层具有光吸收性质，所以入射到配线电极本身的光量和从像素电极和公共电极反射的光量减少，从而降低了配线电极的光反射率。
根据本说明书的一个实施方案的薄膜晶体管基底包括：基底；
设置在所述基底上彼此交叉的多条栅极线和多条数据线；
薄膜晶体管，所述薄膜晶体管包括与栅极线连接的栅电极、设置在栅电极上以绝缘于栅电极的半导体层、与数据线电连接的源电极、和漏电极；以及
光反射减少层，所述光反射减少层设置在栅电极、源电极、漏电极、栅极线和数据线的面向所述基底的平面和与栅电极、源电极、漏电极、栅极线和数据线的面向所述基底的平面相反的平面上，
其中对于光反射减少层，下面给出的式1的值满足0.004或更大且0.22或更小。
[式1]
Figure GDA0002566437650000041
在式1中，k表示光反射减少层的消光系数，t表示光反射减少层的厚度，并且λ表示光的波长。
本说明书的一个实施方案提供包括薄膜晶体管基底的显示装置。
当外部光入射到具有光反射减少层的电极中时，存在在光反射减少层的表面上反射的主反射光，并且存在穿过光反射减少层在下电极表面上反射的次级反射光。
光反射减少层可以通过主反射光和次级反射光之间的消光干涉来降低光反射率。
本发明人已经发现，当将光反射减少层(其中式1的值满足0.004至0.22)设置成接触像素电极和公共电极时，像素电极和公共电极的光反射率通过消光干涉来显著地降低，从而实现显示器的高分辨率。
具体地，其中主反射光和次级反射光的相位差为180度以引起消光干涉的条件在下面给出的式2中表示。
[式2]
Figure GDA0002566437650000042
在上述给出的式2中，t表示光反射减少层的厚度，λ表示光的波长，n表示光反射减少层的折射率，并且N表示预定的奇数，例如1、3和5。
在引起消光干涉的条件下的主反射率可以如下面给出的式3中所示的获得。
[式3]
Figure GDA0002566437650000051
在式3中，n表示光反射减少层的折射率，并且k表示光反射减少层的消光系数。
此外，在引起消光干涉的条件下的次级反射率可以如下面给出的式4中所示的获得。
[式4]
Figure GDA0002566437650000052
在式4中，R金属表示像素电极或公共电极的表面的反射率，R1表示光反射减少层中的主反射率，Io表示入射光的强度，n表示光反射减少层的折射率，k表示光反射减少层的消光系数，并且N表示预定的奇数，例如1、3和5。
根据本说明书的一个实施方案，主反射率与次级反射率之间差异的绝对值可在0.13至0.42的范围中。
根据本说明书的一个实施方案，λ可为550nm。即，λ可为波长为550nm的光。
根据本说明书的一个实施方案，栅电极、源电极、漏电极、栅极线和数据线可以统称为配线电极。
根据本说明书的一个实施方案，由于将光反射减少层设置在配线电极的面向所述基底的面上，所以当将薄膜晶体管基底应用于底部发光结构显示装置时，可以控制取决于配线电极的眩光现象。
此外，根据本说明书的一个实施方案，由于将光反射减少层设置在与配线电极的面向基底的平面相反的平面上，所以当将薄膜晶体管基底应用于顶部发光结构显示装置时，可以控制取决于配线电极的眩光现象。
也就是说，根据本说明书的一个实施方案，薄膜晶体管基底优点在于可以将薄膜晶体管基底应用于底部发光结构显示装置和顶部发光结构显示装置两者。
根据本说明书的一个实施方案，光反射减少层的厚度可在5nm至100nm的范围中，并且更优选地在10nm至100nm的范围中。具体地，根据本说明书的一个实施方案，光反射减少层的厚度可在20nm至60nm的范围中。
当光反射减少层的厚度小于10nm时，可能发生不能充分地控制配线电极的光反射率的问题。此外，当光反射减少层的厚度大于100nm时，可能发生难以对光反射减少层进行图案化的问题。
根据本说明书的一个实施方案，对于波长为550nm的光，光反射减少层的消光系数k可在0.1至2的范围中。具体地，根据本说明书的一个实施方案，对于波长为550nm的光，光反射减少层的消光系数k可在0.4至2的范围中。
当消光系数在所述范围内时，可以有效地控制配线电极的光反射率，并且因此，可以进一步地提高液晶显示装置的可见性。
可以通过使用本领域已知的椭圆计测量设备等来测量消光系数。
消光系数k也可以被称为吸收系数，并且可以是用于定义目标材料吸收特定波长中的光的强度的度量。因此，当入射光通过厚度为t的光反射减少层时，根据k的程度发生主要吸收，并且发生次级吸收，此后，当被下电极层反射的光再次通过厚度为t的光反射减少层时，发生外部反射。因此，光反射减少层的厚度和吸收系数的值作为影响总反射率的关键因素。因此，根据本说明书的一个实施方案，能够在光反射减少层的吸收系数k和厚度t的预定范围内降低光反射的区域通过式1示出。
根据本说明书的一个实施方案，对于波长为550nm的光，光反射减少层的折射率n可在2至3的范围中。
主反射发生在具有消光系数k和折射率n的光反射减少层的材料中，并且在这种情况下，用于确定主反射的关键因素是折射率n和吸收系数k。因此，折射率n和吸收系数k彼此紧密相关，并且效果可以在所述范围内最大化。
根据本说明书的一个实施方案，包括光反射减少层的配线电极的光反射率可为50％或更小，并且更优选地40％或更小。
根据本说明书的一个实施方案，光反射减少层可以包含选自金属氧化物、金属氮化物和金属氮氧化物中的至少一种。具体地，根据本说明书的一个实施方案，光反射减少层可以包含选自金属氧化物、金属氮化物和金属氮氧化物的至少一种作为主要材料。
根据本说明书的一个实施方案，金属氧化物、金属氮化物和金属氮氧化物可以源自选自Cu、Al、Mo、Ti、Ag、Ni、Mn、Au、Cr和Co中的一种或两种或更多种金属。
根据本说明书的一个实施方案，光反射减少层可以包含选自铜氧化物、铜氮化物和铜氮氧化物中的材料。
根据本说明书的一个实施方案，光反射减少层可以包含选自铝氧化物、铝氮化物和铝氮氧化物中的材料。
根据本说明书的一个实施方案，光反射减少层可包含铜-锰氧化物。
根据本说明书的一个实施方案，光反射减少层可包含铜-锰氮氧化物。
根据本说明书的一个实施方案，光反射减少层可包含铜-镍氧化物。
根据本说明书的一个实施方案，光反射减少层可包含铜-镍氮氧化物。
根据本说明书的一个实施方案，光反射减少层可包含钼-钛氧化物。
根据本说明书的一个实施方案，光反射减少层可包含钼-钛氮氧化物。
根据本说明书的一个实施方案，光反射减少层可由单个层或者多个层中的两个或更多个构成。光反射减少层优选地显示非彩色(achromatic color)，但是特别地不限于此。在这种情况下，非彩色意指入射在物体表面的光没有被选择性地吸收，但是相对于各个部分的波长被均匀地反射和吸收时示出的颜色。
图1示出了根据本说明书的一个实施方案的薄膜晶体管基底的平面图的一个区域。具体地，图1示出了由设置在基底上的多条栅极线101a和101b和多条数据线201a和201b划分的像素区域和设置在所述像素区域中的薄膜晶体管301。此外，当应用至显示装置时，使像素区域中的栅极线101b与栅电极310连接，使数据线201a与源电极330连接，并且使漏电极340与像素区域中的公共电极(未示出)或像素电极(未示出)连接。
像素区域意指当将薄膜晶体管基底应用至显示装置时由栅极线和数据线划分的区域。
图2示出了根据本说明书的实施方案的薄膜晶体管基底的横截面。具体地，在基底上设置由栅电极310、半导体层320、源电极330和漏电极340构成的薄膜晶体管301，并且当应用至显示装置时薄膜晶体管301可以由与栅电极连接的数据线201和栅极线(未示出)划分为像素区域。此外，栅电极310和半导体层320可以通过绝缘层1010绝缘。绝缘层1010可以是栅极绝缘层。此外，在栅电极310、源电极330、漏电极340、栅极线(未示出)和数据线201的顶部和底部上设置光反射减少层801。在图2中，设置在栅电极310、源电极330、漏电极340、栅极线(未示出)和数据线201的顶部和底部上填充有黑色的每个层意指光反射减少层801。
根据本说明书的一个实施方案，薄膜晶体管包括从栅极线中分支的栅电极和设置在栅电极上的半导体层，其中绝缘层设置于栅电极和半导体层之间。此外，将半导体层连接至源电极和漏电极，其中欧姆接触层设置于其间并且将源电极连接至数据线。
栅极线提供来自栅极驱动器的扫描信号，并且数据线提供来自数据驱动器的视频信号。
根据本说明书的一个实施方案，可以将栅电极和栅极线设置在基底上并且可以将栅极绝缘层设置在栅电极和栅极线上。此外，可以在栅极绝缘层上设置半导体层、源电极、漏电极和数据线。
此外，根据本说明书的一个实施方案，可以将半导体层、源电极、漏电极和数据线设置在基底上，并且可以将栅极绝缘层设置在半导体层、源电极、漏电极和数据线上。此外，可以在栅极绝缘层上设置栅电极和栅极线。
具体地，栅极绝缘层可以用于使栅电极与半导体层绝缘。
根据本说明书的一个实施方案，栅极绝缘层可以包含选自硅氮化物(SiNx)、硅氧化物(SiO2)、铝氧化物(Al2O3)、铋锌铌(BZN)氧化物、钛氧化物、铪氧化物、锆氧化物、钽氧化物和镧氧化物中的至少一种。
根据本说明书的一个实施方案，半导体层可包含硅和/或硅氧化物。具体地，半导体层可包含非晶硅和/或低温多晶硅(LTPS)。
此外，根据本说明书的一个实施方案，半导体层可包含选自锌氧化物(ZnO)、锡氧化物(SnO)、铟氧化物(InO)、铟-锡氧化物(ITO)、锌-锡氧化物(ZTO)、铟-镓-锌氧化物(IGZO)、锌-铝氧化物(ZAO)、钼硫化物(MoS2)和铟-硅-锌氧化物(ISZO)中的至少一种。
根据本说明书的一个实施方案，栅电极和栅极线可包含选自Cu、W、Mo、Al、Al-Nd、Ag、Au、Ti、TiN、Cr、Ta和Mo-Ti中的至少一种。此外，栅电极和栅极线可以是两个层或更多个层的堆叠结构。
根据本说明书的一个实施方案，源电极和数据线可包含选自Cu、W、Mo、Al、Al-Nd、Ag、Au、Ti、TiN、Cr、Ta和Mo-Ti中的至少一种。此外，源电极和数据线可以是两个层或更多个层的堆叠结构。
根据本说明书的一个实施方案，漏电极可包含选自Cu、W、Mo、Al、Al-Nd、Ag、Au、Ti、TiN、Cr、Ta和Mo-Ti中的至少一种。此外，漏电极可以是两个层或更多个层的堆叠结构。
本说明书的一个实施方案提供了包括薄膜晶体管基底的显示装置。
下文中，将参照实施例对本发明进行更加具体地描述。然而，以下实施例仅仅用于举例说明本发明而不用于限制本发明的范围。
实施例1
通过使用MoTi(50:50，原子％)合金靶的溅射方法在玻璃基底上形成厚度为30nm的MoTi层，通过反应溅射方法通过使用MoTi(50:50，原子％)靶在MoTi层的顶部上形成厚度为40nm的MoTi氮氧化物层。沉积膜的反射率为9.4％。
为了获得光吸收系数(k)值，以与上述相同的方式在玻璃基底上形成MoTi氮氧化物的单个层。然后，使用椭圆计测量折射率和光吸收系数。380nm至1000nm波长处的n、k的值示于图3中，并且在550nm处的光吸收系数值为0.43。当将n和k值和光吸收系数值代入式1中时，结果值计算为0.031。
实施例2至实施例12
在实施例2至实施例12的情况下，通过MacLeod程序进行光学模拟。将实施例1的光学常数值代入程序，并且获得当MoTi氮氧化物层具有各自的厚度和值时的反射率值，并且所述值示于下面给出的表1中。
[表1]
MoTi氮氧化物层厚度(nm) 式1的值 反射率(％)
实施例2 5.5 0.0043 52
实施例3 10 0.0078 46
实施例4 15 0.0117 39
实施例5 20 0.0156 31
实施例6 25 0.0195 23
实施例7 30 0.0235 18
实施例8 35 0.0274 14
实施例9 60 0.0469 17
实施例10 70 0.0547 23
实施例11 80 0.0625 27
实施例12 100 0.078 31
比较例1
通过使用MoTi(50∶50，原子％)合金靶的溅射法在玻璃基底上形成厚度为30nm的MoTi层。沉积膜的反射率为52％。为了获得光吸收系数(k)值，以与上述相同的方式在玻璃基底上形成MoTi的单个层。然后，使用椭圆计测量折射率和光吸收系数。在380nm至1000nm波长处的n、k的值示于图4中，并且在550nm处的光吸收系数值为3.18。当将n和k值和光吸收系数值代入式1时，结果值计算为0.23。示出实施例1的反射率和比较例1的反射率的比较的图示于图5中。
比较例2
与实施例1相似的方式进行所述过程，不同之处在于将MoTi氮氧化物层的厚度设置为4nm。将式1的值计算为0.003。反射率为53％。
实施例13
通过使用Cu单靶的DC溅射方法在具有导电层的玻璃基底上形成厚度为60nm的Cu层，并且通过反应DC溅射方法通过使用MoTi(50:50，原子％)合金靶形成厚度为35nm的包含MoTiaNxOy(0<a≤2，0<x≤3，0<y≤2)的光反射减少层。使用Solidspec 3700(UV-Vis分光光度计，Shimadzu)测量取决于波长的总反射率并且结果示于图6中。光反射减少层的式1的值为0.059。
实施例14
通过使用Cu单靶的DC溅射方法在具有第一导电层的玻璃基底上形成厚度为60nm的Cu层，并且通过DC溅射方法通过使用MoTi(50:50，以％计)合金靶用第二导电层形成厚度为20nm的MoTi层，并且通过反应性DC溅射方法通过使用相同的靶形成包含MoTiaNxOy(0<a≤2，0<x≤3，0<y≤2)且厚度为35nm的光反射减少层。使用Solidspec 3700(UV-Vis分光光度计，Shimadzu)测量取决于波长的总反射率，并且结果示于图7中。光反射减少层的式1的值为0.059。
实施例15
除了使用Al沉积的Al层而不是MoTi层，并且使用氮氧化铝(k＝1.24)而不是MoTi氮氧化物以形成厚度为87nm的层之外，以与实施例1相似的方式进行实施例15。在这种情况下，式1的值为0.2并且反射率为28％或更小。图8和图9示出了在所述结构中应用的反射率和光学常数值。
通过实施例和比较例的实验结果，可以验证优异的光反射减少层的结果可以显示在本发明的权利要求所公开的结构中。
[符号说明]
101a、101b：栅极线
201、201a、201b：数据线
301：薄膜晶体管
310：栅电极
320：半导体层
330：源电极
340：漏电极
401：基底
801：光反射减少层
1010：绝缘层

Claims (3)

1.一种薄膜晶体管基底，包括：
基底；
设置在所述基底上彼此交叉的多条栅极线和多条数据线；
薄膜晶体管，所述薄膜晶体管包括与所述栅极线连接的栅电极、设置在所述栅电极上以绝缘于所述栅电极的半导体层、与所述数据线电连接的源电极、和漏电极；以及
光反射减少层，所述光反射减少层设置在所述栅电极、所述源电极、所述漏电极、所述栅极线和所述数据线的面向所述基底的平面以及与所述栅电极、所述源电极、所述漏电极、所述栅极线和所述数据线的面向所述基底的所述平面相反的平面上，
其中所述光反射减少层的厚度在10nm至100nm的范围中；
其中对于波长为550nm的光，所述光反射减少层的折射率n在2至3的范围中；
其中对于所述光反射减少层，下面给出的式1的值落入0.004至0.078的范围，
[式1]
Figure FDA0003175538710000011
在式1中，k表示所述光反射减少层的消光系数，t表示所述光反射减少层的厚度，并且λ表示光的波长，
其中对于波长为550nm的光，所述光反射减少层的消光系数k在0.4至2的范围中，
其中所述光反射减少层包含MoTi氮氧化物。
2.根据权利要求1所述的薄膜晶体管基底，其中具有所述光反射减少层的电极的光反射率为50％或更小。
3.一种显示装置，包括根据权利要求1至2中任一项所述的薄膜晶体管基底。
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