JP6030333B2 - 液晶ディスプレー、及びアレイ基板 - Google Patents
液晶ディスプレー、及びアレイ基板 Download PDFInfo
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- JP6030333B2 JP6030333B2 JP2012104483A JP2012104483A JP6030333B2 JP 6030333 B2 JP6030333 B2 JP 6030333B2 JP 2012104483 A JP2012104483 A JP 2012104483A JP 2012104483 A JP2012104483 A JP 2012104483A JP 6030333 B2 JP6030333 B2 JP 6030333B2
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- 239000000758 substrate Substances 0.000 title claims description 34
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 57
- 239000002184 metal Substances 0.000 claims description 57
- 238000002161 passivation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134381—Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
2 第1層透明共通電極
3 ゲート金属線
4 ゲート絶縁層
5 半導体層 6 ドープ半導体層
7 ソース・ドレイン金属層(データライン)
8 パッシベーション絶縁層
9 第2層透明画素電極
10、10’ パッシベーション絶縁層のビアホール
11、11’ ゲート金属共通電極
12、12’ 上の行のゲート金属共通電極
13 第2層透明共通電極
14 共通電極におけるビアホール
15 スリット
Claims (8)
- ベース基板と、
前記ベース基板上に各画素にそれぞれ形成された第1層透明共通電極と、
前記第1層透明共通電極上にゲート金属線と同層に形成されたゲート金属共通電極と、
前記ゲート金属共通電極上に形成され、かつビアホールが形成されている絶縁層と、
前記絶縁層上に形成されて、前記ビアホールを通って前記第1層透明共通電極に接続され、前記ゲート金属線を挟んで隣り合う前記第1層透明共通電極同士を接続する第2層透明共通電極と、を備えるアレイ基板において、
前記ビアホールの縁部は、一部がゲート金属共通電極に接触され、他の一部が第1層透明共通電極に接触されているので、前記第2層透明共通電極が前記第1層透明共通電極及び前記ゲート金属共通電極に電気的に接続されていることを特徴とするアレイ基板。 - 少なくとも1つの前記ビアホールは、底部が段階状をなすことを特徴とする請求項1に記載のアレイ基板。
- 前記ゲート金属共通電極は、ビアホールの側部の一部及び底部の一部と接触し、前記第1層透明共通電極はビアホールの底部の他の一部と接触していることを特徴とする請求項1または2のいずれか1項に記載のアレイ基板。
- 前記ゲート金属共通電極は、ビアホールの側部の一部と接触し、前記第1層透明共通電極はビアホールの底部と接触していることを特徴とする請求項1に記載のアレイ基板。
- 前記ゲート絶縁層は前記ゲート金属線の両側にそれぞれ1つのビアホールを有していることを特徴とする請求項1〜4のいずれか1項に記載のアレイ基板。
- 前記ゲート金属線の両側にある2つの前記ビアホールの底部はすべて段階状をなしていることを特徴とする請求項5に記載のアレイ基板。
- 前記絶縁層は、前記ゲート金属共通電極に形成されるゲート絶縁層と、前記ゲート絶縁層に形成されるパッシベーション絶縁層とを備えていることを特徴とする請求項1〜6のいずれか1項に記載のアレイ基板。
- 請求項1に記載のアレイ基板を備える液晶ディスプレー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011201360379U CN202033562U (zh) | 2011-04-29 | 2011-04-29 | 液晶显示器阵列基板 |
CN201120136037.9 | 2011-04-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012234179A JP2012234179A (ja) | 2012-11-29 |
JP6030333B2 true JP6030333B2 (ja) | 2016-11-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012104483A Active JP6030333B2 (ja) | 2011-04-29 | 2012-05-01 | 液晶ディスプレー、及びアレイ基板 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8698149B2 (ja) |
EP (1) | EP2518558B1 (ja) |
JP (1) | JP6030333B2 (ja) |
KR (1) | KR101398094B1 (ja) |
CN (1) | CN202033562U (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629060B (zh) * | 2012-02-22 | 2014-04-02 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN102769040B (zh) * | 2012-07-25 | 2015-03-04 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制作方法、显示装置 |
CN103576401B (zh) * | 2012-08-10 | 2018-05-08 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN103364987B (zh) * | 2013-07-19 | 2015-11-25 | 深圳市华星光电技术有限公司 | 一种阵列基板及显示面板 |
CN103715135B (zh) * | 2013-12-16 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种过孔及其制作方法、阵列基板 |
CN103913916B (zh) * | 2014-04-04 | 2017-04-05 | 合肥鑫晟光电科技有限公司 | 一种阵列基板及其制造方法、液晶显示屏 |
CN104049392B (zh) * | 2014-06-10 | 2017-01-18 | 京东方科技集团股份有限公司 | 防止显示面板异常放电的装置和显示面板制备系统 |
KR102227519B1 (ko) * | 2014-08-27 | 2021-03-16 | 삼성디스플레이 주식회사 | 표시 기판 및 그의 제조방법 |
KR102221845B1 (ko) * | 2014-08-27 | 2021-03-04 | 삼성디스플레이 주식회사 | 표시 기판 및 그의 제조방법 |
KR102232258B1 (ko) * | 2014-08-27 | 2021-03-29 | 삼성디스플레이 주식회사 | 표시 기판 및 그의 제조방법 |
US20180024397A1 (en) * | 2015-04-30 | 2018-01-25 | Lg Chem, Ltd. | Liquid crystal display device and method for manufacturing same |
US10133135B2 (en) | 2015-05-06 | 2018-11-20 | Lg Chem, Ltd. | Liquid crystal display device |
WO2016182282A1 (ko) * | 2015-05-08 | 2016-11-17 | 주식회사 엘지화학 | 박막트랜지스터 기판 및 이를 포함하는 디스플레이 장치 |
US10989946B2 (en) * | 2019-02-21 | 2021-04-27 | Innolux Corporation | Electronic modulating device |
Family Cites Families (13)
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JPH0682839B2 (ja) * | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
KR100190023B1 (ko) * | 1996-02-29 | 1999-06-01 | 윤종용 | 박막트랜지스터-액정표시장치 및 그 제조방법 |
KR100307385B1 (ko) | 1997-03-05 | 2001-12-15 | 구본준, 론 위라하디락사 | 액정표시장치의구조및그제조방법 |
US6259119B1 (en) * | 1997-12-18 | 2001-07-10 | Lg. Philips Lcd Co, Ltd. | Liquid crystal display and method of manufacturing the same |
KR100975734B1 (ko) * | 2003-09-08 | 2010-08-12 | 엘지디스플레이 주식회사 | 횡전계방식 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
KR20060074325A (ko) * | 2004-12-27 | 2006-07-03 | 삼성전자주식회사 | 어레이 기판 및 이를 갖는 표시장치 |
KR20060079040A (ko) * | 2004-12-31 | 2006-07-05 | 엘지.필립스 엘시디 주식회사 | 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법 |
JP4801569B2 (ja) * | 2005-12-05 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP2007226175A (ja) * | 2006-01-26 | 2007-09-06 | Epson Imaging Devices Corp | 液晶装置及び電子機器 |
KR100978263B1 (ko) * | 2006-05-12 | 2010-08-26 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
JP4407677B2 (ja) * | 2006-08-11 | 2010-02-03 | エプソンイメージングデバイス株式会社 | 横電界方式の液晶表示パネル |
KR101274706B1 (ko) * | 2008-05-16 | 2013-06-12 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
JP5091355B2 (ja) * | 2009-10-08 | 2012-12-05 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
-
2011
- 2011-04-29 CN CN2011201360379U patent/CN202033562U/zh not_active Expired - Lifetime
-
2012
- 2012-04-27 EP EP12166015.3A patent/EP2518558B1/en active Active
- 2012-04-27 US US13/457,825 patent/US8698149B2/en active Active
- 2012-04-27 KR KR1020120044639A patent/KR101398094B1/ko active IP Right Grant
- 2012-05-01 JP JP2012104483A patent/JP6030333B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20120273789A1 (en) | 2012-11-01 |
KR101398094B1 (ko) | 2014-05-22 |
KR20120122961A (ko) | 2012-11-07 |
EP2518558A2 (en) | 2012-10-31 |
CN202033562U (zh) | 2011-11-09 |
EP2518558A3 (en) | 2013-04-17 |
EP2518558B1 (en) | 2016-08-24 |
US8698149B2 (en) | 2014-04-15 |
JP2012234179A (ja) | 2012-11-29 |
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