KR101386303B1 - 박막 반도체 소자 및 소자 어셈블리 - Google Patents

박막 반도체 소자 및 소자 어셈블리 Download PDF

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KR101386303B1
KR101386303B1 KR1020097004412A KR20097004412A KR101386303B1 KR 101386303 B1 KR101386303 B1 KR 101386303B1 KR 1020097004412 A KR1020097004412 A KR 1020097004412A KR 20097004412 A KR20097004412 A KR 20097004412A KR 101386303 B1 KR101386303 B1 KR 101386303B1
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layer
thin film
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film semiconductor
heat dissipation
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Expired - Fee Related
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KR1020097004412A
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Korean (ko)
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KR20090035040A (ko
Inventor
시그프레이드 허만
벌톨드 하안
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

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  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
KR1020097004412A 2006-08-04 2007-07-16 박막 반도체 소자 및 소자 어셈블리 Expired - Fee Related KR101386303B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006036543.7 2006-08-04
DE102006036543 2006-08-04
DE102007004303A DE102007004303A1 (de) 2006-08-04 2007-01-29 Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004303.3 2007-01-29
PCT/DE2007/001273 WO2008014750A2 (de) 2006-08-04 2007-07-16 Dünnfilm-halbleiterbauelement und bauelement-verbund

Publications (2)

Publication Number Publication Date
KR20090035040A KR20090035040A (ko) 2009-04-08
KR101386303B1 true KR101386303B1 (ko) 2014-04-17

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KR1020097004412A Expired - Fee Related KR101386303B1 (ko) 2006-08-04 2007-07-16 박막 반도체 소자 및 소자 어셈블리

Country Status (8)

Country Link
US (1) US8872330B2 (enExample)
EP (1) EP2047525A2 (enExample)
JP (1) JP5517616B2 (enExample)
KR (1) KR101386303B1 (enExample)
CN (1) CN101542752B (enExample)
DE (1) DE102007004303A1 (enExample)
TW (1) TWI378571B (enExample)
WO (1) WO2008014750A2 (enExample)

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DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
DE102007017113A1 (de) 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007041896A1 (de) 2007-09-04 2009-03-05 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102008013030A1 (de) 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008026841A1 (de) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
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CN105009388B (zh) * 2013-02-28 2018-04-10 三菱电机株式会社 散热构造及光收发器
JP2014204029A (ja) * 2013-04-08 2014-10-27 立山科学工業株式会社 Ｌｅｄ実装用基板
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JP2018513033A (ja) 2015-03-23 2018-05-24 ストラ エンソ オーワイジェイ エステル化またはエーテル化されたデンプンおよび無機鉱物を含むインクジェット用インク受容性コーティング
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
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WO2008014750A3 (de) 2008-06-12
US20100163915A1 (en) 2010-07-01
KR20090035040A (ko) 2009-04-08
TW200816524A (en) 2008-04-01
JP2009545863A (ja) 2009-12-24
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