KR101357933B1 - 임프린트 장치, 임프린트 방법 및 디바이스 제조 방법 - Google Patents

임프린트 장치, 임프린트 방법 및 디바이스 제조 방법 Download PDF

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Publication number
KR101357933B1
KR101357933B1 KR1020090069283A KR20090069283A KR101357933B1 KR 101357933 B1 KR101357933 B1 KR 101357933B1 KR 1020090069283 A KR1020090069283 A KR 1020090069283A KR 20090069283 A KR20090069283 A KR 20090069283A KR 101357933 B1 KR101357933 B1 KR 101357933B1
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South Korea
Prior art keywords
substrate
mold
resin
unit
pressing
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Korean (ko)
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KR20100018458A (ko
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가즈유끼 가즈미
히데끼 이나
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Engineering (AREA)
KR1020090069283A 2008-08-06 2009-07-29 임프린트 장치, 임프린트 방법 및 디바이스 제조 방법 Expired - Fee Related KR101357933B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-203611 2008-08-06
JP2008203611A JP5279397B2 (ja) 2008-08-06 2008-08-06 インプリント装置、インプリント方法、およびデバイス製造方法

Publications (2)

Publication Number Publication Date
KR20100018458A KR20100018458A (ko) 2010-02-17
KR101357933B1 true KR101357933B1 (ko) 2014-02-03

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Country Link
US (1) US8973495B2 (enExample)
JP (1) JP5279397B2 (enExample)
KR (1) KR101357933B1 (enExample)
TW (1) TWI411520B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10656540B2 (en) 2017-01-23 2020-05-19 SK Hynix Inc. Methods of forming imprint patterns

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CN101464623B (zh) * 2008-12-17 2011-01-26 顾金昌 一种用于数码立体扩印的光栅与感光材料的合成方法
JP5443070B2 (ja) 2009-06-19 2014-03-19 東京エレクトロン株式会社 インプリントシステム
JP5392145B2 (ja) * 2010-02-26 2014-01-22 大日本印刷株式会社 インプリント方法およびインプリント装置
WO2011111792A1 (ja) * 2010-03-11 2011-09-15 株式会社日立ハイテクノロジーズ 微細構造転写装置及び微細構造転写方法
JP5611112B2 (ja) * 2010-05-21 2014-10-22 東京エレクトロン株式会社 インプリントシステム、インプリント方法、プログラム及びコンピュータ記憶媒体
JP2012009831A (ja) * 2010-05-21 2012-01-12 Tokyo Electron Ltd インプリントシステム、インプリント方法、プログラム及びコンピュータ記憶媒体
JP5411201B2 (ja) * 2010-05-21 2014-02-12 東京エレクトロン株式会社 インプリントシステム、インプリント方法、プログラム及びコンピュータ記憶媒体
US20110305787A1 (en) * 2010-06-11 2011-12-15 Satoshi Ishii Stamper for transfer of microscopic structure and transfer apparatus of microscopic structure
JP5669466B2 (ja) * 2010-07-12 2015-02-12 キヤノン株式会社 保持装置、インプリント装置及び物品の製造方法
US9864279B2 (en) 2010-08-05 2018-01-09 Asml Netherlands B.V. Imprint lithography
DE112011102903B4 (de) * 2010-09-01 2014-11-27 Toshiba Kikai K.K. Übertragungssystem und Übertragungsverfahren
JP5754965B2 (ja) * 2011-02-07 2015-07-29 キヤノン株式会社 インプリント装置、および、物品の製造方法
JP5535164B2 (ja) 2011-09-22 2014-07-02 株式会社東芝 インプリント方法およびインプリント装置
JP5798020B2 (ja) 2011-12-01 2015-10-21 東芝機械株式会社 ワーク設置装置およびワーク設置方法
JP6029495B2 (ja) 2012-03-12 2016-11-24 キヤノン株式会社 インプリント方法およびインプリント装置、それを用いた物品の製造方法
JP6029494B2 (ja) 2012-03-12 2016-11-24 キヤノン株式会社 インプリント方法およびインプリント装置、それを用いた物品の製造方法
CN102655191B (zh) * 2012-04-27 2014-09-17 顾建祖 用于led芯片中衬底压印的装置
JP6060796B2 (ja) * 2013-04-22 2017-01-18 大日本印刷株式会社 インプリントモールド及びダミーパターン設計方法
CN103616797B (zh) * 2013-12-16 2017-01-11 苏州光越微纳科技有限公司 一种具有快速对准功能的新型纳米压印设备
JP6271324B2 (ja) * 2014-03-31 2018-01-31 株式会社カネカ インプリント装置、インプリント方法、太陽電池の製造方法及び有機ｅｌ装置の製造方法
JP6399839B2 (ja) 2014-07-15 2018-10-03 キヤノン株式会社 インプリント装置、および物品の製造方法
JP6659104B2 (ja) * 2014-11-11 2020-03-04 キヤノン株式会社 インプリント方法、インプリント装置、型、および物品の製造方法
JP6374307B2 (ja) * 2014-11-27 2018-08-15 国立大学法人北陸先端科学技術大学院大学 型固定装置及び型固定方法、並びに型押し装置及び型押し方法
KR101703811B1 (ko) * 2015-02-02 2017-02-09 주식회사 에이앤디코퍼레이션 나노 임프린트용 몰드 이형장치
JP6313795B2 (ja) * 2016-03-03 2018-04-18 キヤノン株式会社 シャッタユニット、リソグラフィ装置、インプリント装置、及び物品の製造方法
JP6742189B2 (ja) * 2016-08-04 2020-08-19 キヤノン株式会社 インプリント装置、及び物品製造方法
JP6882103B2 (ja) * 2017-07-04 2021-06-02 キヤノン株式会社 インプリント装置、および物品の製造方法
JP7089375B2 (ja) * 2018-02-19 2022-06-22 キヤノン株式会社 平坦化装置
JP7118674B2 (ja) * 2018-03-12 2022-08-16 キヤノン株式会社 型を用いて基板上の組成物を成形する成形装置、成形方法、および物品の製造方法
KR20220120579A (ko) * 2019-12-25 2022-08-30 싸이백스 가부시키가이샤 임프린트 장치 및 임프린트 방법
US11908711B2 (en) * 2020-09-30 2024-02-20 Canon Kabushiki Kaisha Planarization process, planarization system and method of manufacturing an article
US12027373B2 (en) 2021-05-28 2024-07-02 Canon Kabushiki Kaisha Planarization process, planarization system, and method of manufacturing an article
US12300522B2 (en) 2021-12-21 2025-05-13 Canon Kabushiki Kaisha Apparatus including a substrate chuck, a dispenser, and a planarization head and methods of using the same
US20230207326A1 (en) * 2021-12-29 2023-06-29 Canon Kabushiki Kaisha Planarization process, apparatus and method of manufacturing an article
JP2024029829A (ja) * 2022-08-23 2024-03-07 キヤノン株式会社 膜形成装置、膜形成方法、物品の製造方法、及びコンピュータプログラム

Citations (4)

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JP2004055837A (ja) 2002-07-19 2004-02-19 Nec Kyushu Ltd プローバ装置及び半導体装置の検査方法
JP2005135957A (ja) * 2003-10-28 2005-05-26 Sharp Corp パターン形成方法およびパターン形成装置
JP2005349619A (ja) 2004-06-09 2005-12-22 Ricoh Opt Ind Co Ltd 形状転写用金型、それを用いた製品の製造方法及び得られる微細形状をもつ製品
JP2007194601A (ja) 2005-12-23 2007-08-02 Asml Netherlands Bv インプリントリソグラフィのアライメント

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JP4524943B2 (ja) * 2001-03-27 2010-08-18 ダイキン工業株式会社 半導体素子のパターン形成方法及びインプリント加工用モールドの製造方法
MY144124A (en) * 2002-07-11 2011-08-15 Molecular Imprints Inc Step and repeat imprint lithography systems
JP4154595B2 (ja) * 2003-05-28 2008-09-24 ダイキン工業株式会社 インプリント加工用金型およびその製造方法
JP2005153091A (ja) 2003-11-27 2005-06-16 Hitachi Ltd 転写方法及び転写装置
JP4542382B2 (ja) 2004-07-05 2010-09-15 株式会社日立製作所 転写印刷版保持構造
JP4533358B2 (ja) * 2005-10-18 2010-09-01 キヤノン株式会社 インプリント方法、インプリント装置およびチップの製造方法
JPWO2007094213A1 (ja) * 2006-02-14 2009-07-02 パイオニア株式会社 インプリント装置及びインプリント方法
KR20080015536A (ko) * 2006-08-16 2008-02-20 삼성전자주식회사 와이어 그리드 편광자 제조 시스템 및 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004055837A (ja) 2002-07-19 2004-02-19 Nec Kyushu Ltd プローバ装置及び半導体装置の検査方法
JP2005135957A (ja) * 2003-10-28 2005-05-26 Sharp Corp パターン形成方法およびパターン形成装置
JP2005349619A (ja) 2004-06-09 2005-12-22 Ricoh Opt Ind Co Ltd 形状転写用金型、それを用いた製品の製造方法及び得られる微細形状をもつ製品
JP2007194601A (ja) 2005-12-23 2007-08-02 Asml Netherlands Bv インプリントリソグラフィのアライメント

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10656540B2 (en) 2017-01-23 2020-05-19 SK Hynix Inc. Methods of forming imprint patterns

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Publication number Publication date
JP5279397B2 (ja) 2013-09-04
KR20100018458A (ko) 2010-02-17
US20100031833A1 (en) 2010-02-11
US8973495B2 (en) 2015-03-10
JP2010040879A (ja) 2010-02-18
TW201008759A (en) 2010-03-01
TWI411520B (zh) 2013-10-11

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