KR101357660B1 - 부성 저항소자를 갖는 발진기 - Google Patents

부성 저항소자를 갖는 발진기 Download PDF

Info

Publication number
KR101357660B1
KR101357660B1 KR1020127008595A KR20127008595A KR101357660B1 KR 101357660 B1 KR101357660 B1 KR 101357660B1 KR 1020127008595 A KR1020127008595 A KR 1020127008595A KR 20127008595 A KR20127008595 A KR 20127008595A KR 101357660 B1 KR101357660 B1 KR 101357660B1
Authority
KR
South Korea
Prior art keywords
capacitor
negative resistance
oscillator
resistance element
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127008595A
Other languages
English (en)
Korean (ko)
Other versions
KR20120062867A (ko
Inventor
토시히코 오우치
료타 세키구치
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20120062867A publication Critical patent/KR20120062867A/ko
Application granted granted Critical
Publication of KR101357660B1 publication Critical patent/KR101357660B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
KR1020127008595A 2009-09-07 2010-08-13 부성 저항소자를 갖는 발진기 Expired - Fee Related KR101357660B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009205673A JP5612842B2 (ja) 2009-09-07 2009-09-07 発振器
JPJP-P-2009-205673 2009-09-07
PCT/JP2010/064036 WO2011027671A1 (en) 2009-09-07 2010-08-13 Oscillator having negative resistance element

Publications (2)

Publication Number Publication Date
KR20120062867A KR20120062867A (ko) 2012-06-14
KR101357660B1 true KR101357660B1 (ko) 2014-02-05

Family

ID=43003801

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127008595A Expired - Fee Related KR101357660B1 (ko) 2009-09-07 2010-08-13 부성 저항소자를 갖는 발진기

Country Status (8)

Country Link
US (1) US8779864B2 (enExample)
EP (1) EP2476205B1 (enExample)
JP (1) JP5612842B2 (enExample)
KR (1) KR101357660B1 (enExample)
CN (1) CN102484450B (enExample)
BR (1) BR112012005049A2 (enExample)
RU (1) RU2486660C1 (enExample)
WO (1) WO2011027671A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5808560B2 (ja) * 2011-04-01 2015-11-10 ローム株式会社 テラヘルツ発振検出素子
JP2013236326A (ja) * 2012-05-10 2013-11-21 Canon Inc 発振素子、受信素子、及び測定装置
JP6280310B2 (ja) * 2012-06-06 2018-02-14 キヤノン株式会社 発振器
JP2014127715A (ja) * 2012-12-27 2014-07-07 Toshiba Corp 半導体装置
JP6100024B2 (ja) * 2013-02-27 2017-03-22 キヤノン株式会社 発振素子
JP6373010B2 (ja) * 2013-03-12 2018-08-15 キヤノン株式会社 発振素子
JP2014207654A (ja) * 2013-03-16 2014-10-30 キヤノン株式会社 導波路素子
CN103762416B (zh) * 2014-02-25 2016-12-07 中国工程物理研究院电子工程研究所 一种太赫兹波片载-波导-喇叭转换天线
JP6794508B2 (ja) * 2014-02-28 2020-12-02 キヤノン株式会社 発振素子、及びこれを用いた発振器
JP6562645B2 (ja) * 2014-02-28 2019-08-21 キヤノン株式会社 発振素子、及びこれを用いた発振器
JP6870135B2 (ja) * 2014-02-28 2021-05-12 キヤノン株式会社 素子
JP6682185B2 (ja) * 2014-02-28 2020-04-15 キヤノン株式会社 素子
JP2016036128A (ja) * 2014-07-31 2016-03-17 キヤノン株式会社 発振素子
US9899959B2 (en) * 2015-05-22 2018-02-20 Canon Kabushiki Kaisha Element, and oscillator and information acquiring device including the element
US9866245B2 (en) 2015-11-18 2018-01-09 Linear Technology Corporation Active differential resistors with reduced noise
JP7516009B2 (ja) 2019-02-20 2024-07-16 キヤノン株式会社 発振器、撮像装置
JP7493922B2 (ja) 2019-08-26 2024-06-03 キヤノン株式会社 発振器、撮像装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030122628A1 (en) * 2001-12-28 2003-07-03 Masayoshi Aikawa High frequency oscillator

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2800566B2 (ja) * 1991-07-23 1998-09-21 日本電気株式会社 電界効果トランジスタおよび高周波信号発振器および周波数変換回路
JP3210159B2 (ja) 1993-12-10 2001-09-17 キヤノン株式会社 半導体レーザ、光源装置、光通信システム及び光通信方法
JPH07307530A (ja) 1994-03-17 1995-11-21 Canon Inc 偏波変調可能な半導体レーザ
US5659560A (en) 1994-05-12 1997-08-19 Canon Kabushiki Kaisha Apparatus and method for driving oscillation polarization selective light source, and optical communication system using the same
US5539761A (en) * 1994-05-24 1996-07-23 Yissum Research Development Company Of The Hebrew University Of Jerusalem Resonant tunneling oscillators
US5764670A (en) 1995-02-27 1998-06-09 Canon Kabushiki Kaisha Semiconductor laser apparatus requiring no external modulator, method of driving semiconductor laser device, and optical communication system using the semiconductor laser apparatus
JP2001042170A (ja) 1999-07-28 2001-02-16 Canon Inc 光配線装置、その駆動方法およびそれを用いた電子機器
RU2190921C2 (ru) * 1999-12-31 2002-10-10 Таганрогский государственный радиотехнический университет Генератор сверхвысоких частот
US7630588B2 (en) 2003-06-25 2009-12-08 Canon Kabushiki Kaisha High frequency electrical signal control device and sensing system
JP4136858B2 (ja) 2003-09-12 2008-08-20 キヤノン株式会社 位置検出装置、及び情報入力装置
JP2005157601A (ja) 2003-11-25 2005-06-16 Canon Inc 電磁波による積層状物体計数装置及び計数方法
RU37896U1 (ru) * 2003-12-05 2004-05-10 Бокова Оксана Игоревна Автогенератор на туннельном диоде
JP4217646B2 (ja) 2004-03-26 2009-02-04 キヤノン株式会社 認証方法及び認証装置
JP4250573B2 (ja) 2004-07-16 2009-04-08 キヤノン株式会社 素子
JP4546326B2 (ja) 2004-07-30 2010-09-15 キヤノン株式会社 センシング装置
JP4390147B2 (ja) 2005-03-28 2009-12-24 キヤノン株式会社 周波数可変発振器
JP4250603B2 (ja) 2005-03-28 2009-04-08 キヤノン株式会社 テラヘルツ波の発生素子、及びその製造方法
JP2006275910A (ja) 2005-03-30 2006-10-12 Canon Inc 位置センシング装置及び位置センシング方法
JP4402026B2 (ja) 2005-08-30 2010-01-20 キヤノン株式会社 センシング装置
JP2007124250A (ja) 2005-10-27 2007-05-17 Tokyo Institute Of Technology テラヘルツ発振素子
JP4773839B2 (ja) 2006-02-15 2011-09-14 キヤノン株式会社 対象物の情報を検出する検出装置
JP5132146B2 (ja) 2006-03-17 2013-01-30 キヤノン株式会社 分析方法、分析装置、及び検体保持部材
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
JP4898472B2 (ja) 2006-04-11 2012-03-14 キヤノン株式会社 検査装置
JP4709059B2 (ja) 2006-04-28 2011-06-22 キヤノン株式会社 検査装置及び検査方法
JP5028068B2 (ja) * 2006-05-31 2012-09-19 キヤノン株式会社 アクティブアンテナ発振器
JP5196750B2 (ja) 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
JP4873746B2 (ja) 2006-12-21 2012-02-08 キヤノン株式会社 発振素子
RU2336625C1 (ru) * 2007-05-24 2008-10-20 Андрей Борисович Козырев Свч-автогенератор
JP5144175B2 (ja) 2007-08-31 2013-02-13 キヤノン株式会社 電磁波を用いる検査装置及び検査方法
US7869036B2 (en) 2007-08-31 2011-01-11 Canon Kabushiki Kaisha Analysis apparatus for analyzing a specimen by obtaining electromagnetic spectrum information
JP5171539B2 (ja) 2007-11-29 2013-03-27 キヤノン株式会社 共鳴トンネル構造体
JP4807707B2 (ja) 2007-11-30 2011-11-02 キヤノン株式会社 波形情報取得装置
JP4834718B2 (ja) 2008-01-29 2011-12-14 キヤノン株式会社 パルスレーザ装置、テラヘルツ発生装置、テラヘルツ計測装置及びテラヘルツトモグラフィー装置
JP5357531B2 (ja) 2008-02-05 2013-12-04 キヤノン株式会社 情報取得装置及び情報取得方法
JP5506258B2 (ja) 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP5665305B2 (ja) 2008-12-25 2015-02-04 キヤノン株式会社 分析装置
TW201027512A (en) 2009-01-06 2010-07-16 Novatek Microelectronics Corp Data driving circuit for flat display panel with partial mode and method for processing pixel data of a partial window
JP5717336B2 (ja) 2009-03-27 2015-05-13 キヤノン株式会社 発振器
JP5563356B2 (ja) 2010-04-12 2014-07-30 キヤノン株式会社 電磁波検出素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030122628A1 (en) * 2001-12-28 2003-07-03 Masayoshi Aikawa High frequency oscillator

Also Published As

Publication number Publication date
JP2011061276A (ja) 2011-03-24
US20120105161A1 (en) 2012-05-03
EP2476205A1 (en) 2012-07-18
JP5612842B2 (ja) 2014-10-22
CN102484450B (zh) 2014-11-12
EP2476205B1 (en) 2014-07-16
US8779864B2 (en) 2014-07-15
WO2011027671A1 (en) 2011-03-10
RU2486660C1 (ru) 2013-06-27
CN102484450A (zh) 2012-05-30
BR112012005049A2 (pt) 2017-01-31
KR20120062867A (ko) 2012-06-14

Similar Documents

Publication Publication Date Title
KR101357660B1 (ko) 부성 저항소자를 갖는 발진기
KR101323641B1 (ko) 발진기
JP6570187B2 (ja) 周波数可変テラヘルツ発振器及びその製造方法
JP5127360B2 (ja) 発振素子、及び検査装置
JP6280310B2 (ja) 発振器
US9236833B2 (en) Electromagnetic wave generation device and detection device
US9819145B2 (en) Laser and integrated graphene modulator
US10277167B2 (en) Oscillation element and oscillator using the same
JP5808560B2 (ja) テラヘルツ発振検出素子
US9899959B2 (en) Element, and oscillator and information acquiring device including the element
US8319565B2 (en) Resonator tunnel device
JP2012215530A (ja) 透過型テラヘルツ波検査装置
Maricar et al. Planar Gunn diode characterisation and resonator elements to realise oscillator circuits
US9438168B2 (en) Oscillator

Legal Events

Date Code Title Description
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170125

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170125