BR112012005049A2 - oscilador tendo um elemento de resistência negativa e um ressonador - Google Patents

oscilador tendo um elemento de resistência negativa e um ressonador

Info

Publication number
BR112012005049A2
BR112012005049A2 BR112012005049A BR112012005049A BR112012005049A2 BR 112012005049 A2 BR112012005049 A2 BR 112012005049A2 BR 112012005049 A BR112012005049 A BR 112012005049A BR 112012005049 A BR112012005049 A BR 112012005049A BR 112012005049 A2 BR112012005049 A2 BR 112012005049A2
Authority
BR
Brazil
Prior art keywords
resonator
oscillator
resistance element
negative resistance
negative
Prior art date
Application number
BR112012005049A
Other languages
English (en)
Portuguese (pt)
Inventor
Sekiguchi Ryota
Ouchi Toshihiko
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of BR112012005049A2 publication Critical patent/BR112012005049A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
BR112012005049A 2009-09-07 2010-08-13 oscilador tendo um elemento de resistência negativa e um ressonador BR112012005049A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009205673A JP5612842B2 (ja) 2009-09-07 2009-09-07 発振器
PCT/JP2010/064036 WO2011027671A1 (en) 2009-09-07 2010-08-13 Oscillator having negative resistance element

Publications (1)

Publication Number Publication Date
BR112012005049A2 true BR112012005049A2 (pt) 2017-01-31

Family

ID=43003801

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012005049A BR112012005049A2 (pt) 2009-09-07 2010-08-13 oscilador tendo um elemento de resistência negativa e um ressonador

Country Status (8)

Country Link
US (1) US8779864B2 (enExample)
EP (1) EP2476205B1 (enExample)
JP (1) JP5612842B2 (enExample)
KR (1) KR101357660B1 (enExample)
CN (1) CN102484450B (enExample)
BR (1) BR112012005049A2 (enExample)
RU (1) RU2486660C1 (enExample)
WO (1) WO2011027671A1 (enExample)

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Also Published As

Publication number Publication date
KR101357660B1 (ko) 2014-02-05
RU2486660C1 (ru) 2013-06-27
WO2011027671A1 (en) 2011-03-10
JP5612842B2 (ja) 2014-10-22
US20120105161A1 (en) 2012-05-03
EP2476205B1 (en) 2014-07-16
US8779864B2 (en) 2014-07-15
KR20120062867A (ko) 2012-06-14
CN102484450A (zh) 2012-05-30
JP2011061276A (ja) 2011-03-24
CN102484450B (zh) 2014-11-12
EP2476205A1 (en) 2012-07-18

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