KR101353477B1 - 단결정 인상장치 및 도가니 지지장치 - Google Patents

단결정 인상장치 및 도가니 지지장치 Download PDF

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Publication number
KR101353477B1
KR101353477B1 KR1020110095879A KR20110095879A KR101353477B1 KR 101353477 B1 KR101353477 B1 KR 101353477B1 KR 1020110095879 A KR1020110095879 A KR 1020110095879A KR 20110095879 A KR20110095879 A KR 20110095879A KR 101353477 B1 KR101353477 B1 KR 101353477B1
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KR
South Korea
Prior art keywords
support
cylinder
shaft
single crystal
fixed
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KR1020110095879A
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English (en)
Korean (ko)
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KR20120036744A (ko
Inventor
토시후미 코즈마
켄 이소베
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스미토모 긴조쿠 파인테크 가부시키가이샤
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Publication of KR20120036744A publication Critical patent/KR20120036744A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020110095879A 2010-10-08 2011-09-22 단결정 인상장치 및 도가니 지지장치 KR101353477B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-228133 2010-10-08
JP2010228133A JP5483591B2 (ja) 2010-10-08 2010-10-08 単結晶引上装置および坩堝支持装置

Publications (2)

Publication Number Publication Date
KR20120036744A KR20120036744A (ko) 2012-04-18
KR101353477B1 true KR101353477B1 (ko) 2014-01-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110095879A KR101353477B1 (ko) 2010-10-08 2011-09-22 단결정 인상장치 및 도가니 지지장치

Country Status (4)

Country Link
JP (1) JP5483591B2 (zh)
KR (1) KR101353477B1 (zh)
CN (1) CN102443847B (zh)
TW (1) TWI426163B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102851732B (zh) * 2012-09-26 2015-08-19 南京晶升能源设备有限公司 蓝宝石单晶炉的称重机构
CN105378157B (zh) * 2013-06-29 2018-02-06 胜高股份有限公司 氧化硅玻璃坩埚的基座装填方法
CN103422160A (zh) * 2013-08-12 2013-12-04 西安创联新能源设备有限公司 蓝宝石炉双波纹管称重系统
JP6187486B2 (ja) 2015-01-19 2017-08-30 トヨタ自動車株式会社 単結晶製造装置
CN105696068A (zh) * 2016-04-12 2016-06-22 盐城市振弘电子材料厂 一种钽酸锂单晶生长设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920701532A (ko) * 1990-03-12 1992-08-12 버나드 엠 길레스피 결정성장장치와 이를 위한 용융물보충장치의 제어시스템
JPH06206797A (ja) * 1992-11-18 1994-07-26 Fuji Electric Co Ltd 単結晶引上げ装置
JPH10279384A (ja) * 1997-02-04 1998-10-20 Komatsu Electron Metals Co Ltd 結晶体の引上げ装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569828A (en) * 1984-11-27 1986-02-11 Gakei Electric Works Co., Ltd. Crystal pulling apparatus for making single crystals of compound semiconductors containing a volatile component
JPH04182379A (ja) * 1990-11-10 1992-06-29 Nippon Mektron Ltd 単結晶引上げ装置
JP3076488B2 (ja) * 1993-10-22 2000-08-14 コマツ電子金属株式会社 半導体単結晶育成装置
JP3402012B2 (ja) * 1995-04-21 2003-04-28 信越半導体株式会社 単結晶の成長方法及び装置
JP3402040B2 (ja) * 1995-12-27 2003-04-28 信越半導体株式会社 単結晶保持装置
DE19613282A1 (de) * 1996-04-03 1997-10-09 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
JPH101389A (ja) * 1996-06-18 1998-01-06 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 自動酸化物結晶製造方法及び装置
JP3528448B2 (ja) * 1996-07-23 2004-05-17 信越半導体株式会社 単結晶の引上げ方法及び装置
TW486572B (en) * 1997-02-04 2002-05-11 Komatsu Denshi Kinzoku Kk Device for dragging crystalline
TW370580B (en) * 1997-09-22 1999-09-21 Super Silicon Crystal Res Monocrystal pulling device
JPH11171688A (ja) * 1997-12-11 1999-06-29 Komatsu Koki Kk 単結晶引上げ装置
DE10007265B4 (de) * 2000-02-17 2009-10-22 Crystal Growing Systems Gmbh Kristallziehanlage
JP2004315256A (ja) * 2003-04-14 2004-11-11 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶製造装置
CN101680111A (zh) * 2007-03-19 2010-03-24 Mnk-Sog硅公司 硅锭的制造方法及制造装置
JP4894848B2 (ja) * 2008-11-18 2012-03-14 信越半導体株式会社 シリコン単結晶の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920701532A (ko) * 1990-03-12 1992-08-12 버나드 엠 길레스피 결정성장장치와 이를 위한 용융물보충장치의 제어시스템
JPH06206797A (ja) * 1992-11-18 1994-07-26 Fuji Electric Co Ltd 単結晶引上げ装置
JPH10279384A (ja) * 1997-02-04 1998-10-20 Komatsu Electron Metals Co Ltd 結晶体の引上げ装置

Also Published As

Publication number Publication date
TW201231743A (en) 2012-08-01
JP5483591B2 (ja) 2014-05-07
CN102443847B (zh) 2014-08-06
TWI426163B (zh) 2014-02-11
JP2012082087A (ja) 2012-04-26
CN102443847A (zh) 2012-05-09
KR20120036744A (ko) 2012-04-18

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