KR101325333B1 - 유전체 필름을 위한 속도 개선 ｃｍｐ 조성물 - Google Patents

유전체 필름을 위한 속도 개선 ｃｍｐ 조성물 Download PDF

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Publication number
KR101325333B1
KR101325333B1 KR1020097001539A KR20097001539A KR101325333B1 KR 101325333 B1 KR101325333 B1 KR 101325333B1 KR 1020097001539 A KR1020097001539 A KR 1020097001539A KR 20097001539 A KR20097001539 A KR 20097001539A KR 101325333 B1 KR101325333 B1 KR 101325333B1
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South Korea
Prior art keywords
polishing composition
polishing
substrate
silica
ppm
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KR1020097001539A
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Korean (ko)
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KR20090031589A (ko
Inventor
로버트 바카시
벤자민 베이어
잔 첸
제프리 챔버레인
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캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20090031589A publication Critical patent/KR20090031589A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020097001539A 2006-07-24 2007-07-12 유전체 필름을 위한 속도 개선 ｃｍｐ 조성물 Active KR101325333B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/491,612 2006-07-24
US11/491,612 US20080020680A1 (en) 2006-07-24 2006-07-24 Rate-enhanced CMP compositions for dielectric films
PCT/US2007/015872 WO2008013678A1 (en) 2006-07-24 2007-07-12 Rate-enhanced cmp compositions for dielectric films

Publications (2)

Publication Number Publication Date
KR20090031589A KR20090031589A (ko) 2009-03-26
KR101325333B1 true KR101325333B1 (ko) 2013-11-11

Family

ID=38972027

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097001539A Active KR101325333B1 (ko) 2006-07-24 2007-07-12 유전체 필름을 위한 속도 개선 ｃｍｐ 조성물

Country Status (10)

Country Link
US (1) US20080020680A1 (https=)
EP (1) EP2052049A4 (https=)
JP (1) JP2009545159A (https=)
KR (1) KR101325333B1 (https=)
CN (2) CN101490203A (https=)
IL (1) IL196220A (https=)
MY (1) MY155014A (https=)
SG (1) SG174001A1 (https=)
TW (1) TWI462999B (https=)
WO (1) WO2008013678A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160001684A (ko) * 2014-06-27 2016-01-06 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 화학적 기계 연마 조성물 및 텅스텐의 연마 방법

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JP5518523B2 (ja) * 2010-02-25 2014-06-11 富士フイルム株式会社 化学的機械的研磨液及び研磨方法
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
JP6691774B2 (ja) * 2013-07-11 2020-05-13 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
JP6730859B2 (ja) * 2015-07-15 2020-07-29 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
JP6721704B2 (ja) * 2016-03-04 2020-07-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 半導体基材をケミカルメカニカル研磨する方法
WO2018058347A1 (en) * 2016-09-28 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds
JP6817896B2 (ja) * 2017-05-26 2021-01-20 株式会社荏原製作所 基板研磨装置および基板研磨方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
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KR102427996B1 (ko) * 2014-06-27 2022-08-01 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 화학적 기계 연마 조성물 및 텅스텐의 연마 방법

Also Published As

Publication number Publication date
TWI462999B (zh) 2014-12-01
IL196220A (en) 2014-04-30
WO2008013678A1 (en) 2008-01-31
CN103937411A (zh) 2014-07-23
EP2052049A1 (en) 2009-04-29
TW200813202A (en) 2008-03-16
SG174001A1 (en) 2011-09-29
CN101490203A (zh) 2009-07-22
KR20090031589A (ko) 2009-03-26
EP2052049A4 (en) 2010-08-25
MY155014A (en) 2015-08-28
IL196220A0 (en) 2009-09-22
US20080020680A1 (en) 2008-01-24
JP2009545159A (ja) 2009-12-17

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