JP2009545159A - 除去速度の高い誘電体膜のためのｃｍｐ組成物 - Google Patents

除去速度の高い誘電体膜のためのｃｍｐ組成物 Download PDF

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Publication number
JP2009545159A
JP2009545159A JP2009521753A JP2009521753A JP2009545159A JP 2009545159 A JP2009545159 A JP 2009545159A JP 2009521753 A JP2009521753 A JP 2009521753A JP 2009521753 A JP2009521753 A JP 2009521753A JP 2009545159 A JP2009545159 A JP 2009545159A
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JP
Japan
Prior art keywords
polishing composition
silica
chemical mechanical
mechanical polishing
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009521753A
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English (en)
Japanese (ja)
Other versions
JP2009545159A5 (https=
Inventor
バキャシー，ロバート
ベイヤー，ベンジャミン
チェン，チャン
チェンバレン，ジェフリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2009545159A publication Critical patent/JP2009545159A/ja
Publication of JP2009545159A5 publication Critical patent/JP2009545159A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009521753A 2006-07-24 2007-07-12 除去速度の高い誘電体膜のためのｃｍｐ組成物 Pending JP2009545159A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/491,612 US20080020680A1 (en) 2006-07-24 2006-07-24 Rate-enhanced CMP compositions for dielectric films
PCT/US2007/015872 WO2008013678A1 (en) 2006-07-24 2007-07-12 Rate-enhanced cmp compositions for dielectric films

Publications (2)

Publication Number Publication Date
JP2009545159A true JP2009545159A (ja) 2009-12-17
JP2009545159A5 JP2009545159A5 (https=) 2010-08-26

Family

ID=38972027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009521753A Pending JP2009545159A (ja) 2006-07-24 2007-07-12 除去速度の高い誘電体膜のためのｃｍｐ組成物

Country Status (10)

Country Link
US (1) US20080020680A1 (https=)
EP (1) EP2052049A4 (https=)
JP (1) JP2009545159A (https=)
KR (1) KR101325333B1 (https=)
CN (2) CN101490203A (https=)
IL (1) IL196220A (https=)
MY (1) MY155014A (https=)
SG (1) SG174001A1 (https=)
TW (1) TWI462999B (https=)
WO (1) WO2008013678A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176208A (ja) * 2010-02-25 2011-09-08 Fujifilm Corp 化学的機械的研磨液及び研磨方法
JP2013042131A (ja) * 2011-08-15 2013-02-28 Rohm & Haas Electronic Materials Cmp Holdings Inc タングステンをケミカルメカニカルポリッシングするための方法
WO2015005433A1 (ja) * 2013-07-11 2015-01-15 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
JP2016048777A (ja) * 2014-06-27 2016-04-07 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ケミカルメカニカルポリッシング組成物及びタングステン研磨法
JP2017025295A (ja) * 2015-07-15 2017-02-02 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5403922B2 (ja) * 2008-02-26 2014-01-29 富士フイルム株式会社 研磨液および研磨方法
MY150487A (en) * 2008-09-19 2014-01-30 Cabot Microelectronics Corp Barrier slurry for low-k dielectrics.
WO2010062818A2 (en) * 2008-11-26 2010-06-03 Applied Materials, Inc. Two-line mixing of chemical and abrasive particles with endpoint control for chemical mechanical polishing
CN102051126B (zh) * 2009-11-06 2014-11-05 安集微电子（上海）有限公司 一种用于钨化学机械抛光的抛光液
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
JP6721704B2 (ja) * 2016-03-04 2020-07-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 半導体基材をケミカルメカニカル研磨する方法
WO2018058347A1 (en) * 2016-09-28 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds
JP6817896B2 (ja) * 2017-05-26 2021-01-20 株式会社荏原製作所 基板研磨装置および基板研磨方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1026576A (ja) * 1996-07-12 1998-01-27 Central Japan Railway Co 道床バラストの劣化度診断・評価装置
JPH10265766A (ja) * 1996-11-26 1998-10-06 Cabot Corp 金属のｃｍｐに有用な組成物及びスラリー
JP2003514061A (ja) * 1999-11-04 2003-04-15 キャボット マイクロエレクトロニクス コーポレイション 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用
JP2005045102A (ja) * 2003-07-24 2005-02-17 Shin Etsu Handotai Co Ltd ウエーハの研磨方法
JP2005101545A (ja) * 2003-08-05 2005-04-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 半導体層を研磨するための組成物
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JPH11349925A (ja) * 1998-06-05 1999-12-21 Fujimi Inc エッジポリッシング用組成物
US6558570B2 (en) * 1998-07-01 2003-05-06 Micron Technology, Inc. Polishing slurry and method for chemical-mechanical polishing
JP2002528903A (ja) * 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム
US6046112A (en) * 1998-12-14 2000-04-04 Taiwan Semiconductor Manufacturing Company Chemical mechanical polishing slurry
FR2789998B1 (fr) * 1999-02-18 2005-10-07 Clariant France Sa Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
KR100343391B1 (ko) * 1999-11-18 2002-08-01 삼성전자 주식회사 화학 및 기계적 연마용 비선택성 슬러리 및 그제조방법과, 이를 이용하여 웨이퍼상의 절연층 내에플러그를 형성하는 방법
KR100396883B1 (ko) * 2000-11-23 2003-09-02 삼성전자주식회사 화학기계적 연마용 슬러리 및 이를 이용한 구리 금속배선제조방법
US6440857B1 (en) * 2001-01-25 2002-08-27 Everlight Usa, Inc. Two-step CMP method and employed polishing compositions
KR100464429B1 (ko) * 2002-08-16 2005-01-03 삼성전자주식회사 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법
JP4320375B2 (ja) * 2001-11-15 2009-08-26 サムスン エレクトロニクス カンパニー リミテッド 添加剤組成物、これを含むスラリー組成物及び研磨方法
KR100449610B1 (ko) * 2001-11-27 2004-09-21 제일모직주식회사 절연층 연마용 슬러리 조성물
US6719920B2 (en) * 2001-11-30 2004-04-13 Intel Corporation Slurry for polishing a barrier layer
US6660638B1 (en) * 2002-01-03 2003-12-09 Taiwan Semiconductor Manufacturing Company CMP process leaving no residual oxide layer or slurry particles
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
EP1489650B1 (en) * 2002-03-04 2010-07-14 Fujimi Incorporated Polishing composition and method for forming wiring structure
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
KR20040000009A (ko) * 2002-06-19 2004-01-03 주식회사 하이닉스반도체 플라티늄-ｃｍｐ용 용액
EP1544901B1 (en) * 2002-09-25 2009-12-16 Seimi Chemical Co., Ltd. Polishing compound composition and polishing method
TW200424299A (en) * 2002-12-26 2004-11-16 Kao Corp Polishing composition
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
TW200427827A (en) * 2003-05-30 2004-12-16 Sumitomo Chemical Co Metal polishing composition
US7087529B2 (en) * 2003-10-02 2006-08-08 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces
KR100630678B1 (ko) * 2003-10-09 2006-10-02 삼성전자주식회사 알루미늄막의 화학적 기계적 연마용 슬러리, 그 슬러리를사용하는 화학적 기계적 연마 방법 및 그 방법을 사용하는알루미늄 배선 형성방법
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
GB2415199B (en) * 2004-06-14 2009-06-17 Kao Corp Polishing composition
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
KR100648264B1 (ko) * 2004-08-17 2006-11-23 삼성전자주식회사 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1026576A (ja) * 1996-07-12 1998-01-27 Central Japan Railway Co 道床バラストの劣化度診断・評価装置
JPH10265766A (ja) * 1996-11-26 1998-10-06 Cabot Corp 金属のｃｍｐに有用な組成物及びスラリー
JP2003514061A (ja) * 1999-11-04 2003-04-15 キャボット マイクロエレクトロニクス コーポレイション 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用
JP2005045102A (ja) * 2003-07-24 2005-02-17 Shin Etsu Handotai Co Ltd ウエーハの研磨方法
JP2005101545A (ja) * 2003-08-05 2005-04-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 半導体層を研磨するための組成物
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176208A (ja) * 2010-02-25 2011-09-08 Fujifilm Corp 化学的機械的研磨液及び研磨方法
JP2013042131A (ja) * 2011-08-15 2013-02-28 Rohm & Haas Electronic Materials Cmp Holdings Inc タングステンをケミカルメカニカルポリッシングするための方法
WO2015005433A1 (ja) * 2013-07-11 2015-01-15 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
JPWO2015005433A1 (ja) * 2013-07-11 2017-03-02 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
JP2016048777A (ja) * 2014-06-27 2016-04-07 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ケミカルメカニカルポリッシング組成物及びタングステン研磨法
JP2017025295A (ja) * 2015-07-15 2017-02-02 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法

Also Published As

Publication number Publication date
TWI462999B (zh) 2014-12-01
IL196220A (en) 2014-04-30
WO2008013678A1 (en) 2008-01-31
CN103937411A (zh) 2014-07-23
EP2052049A1 (en) 2009-04-29
TW200813202A (en) 2008-03-16
SG174001A1 (en) 2011-09-29
CN101490203A (zh) 2009-07-22
KR20090031589A (ko) 2009-03-26
KR101325333B1 (ko) 2013-11-11
EP2052049A4 (en) 2010-08-25
MY155014A (en) 2015-08-28
IL196220A0 (en) 2009-09-22
US20080020680A1 (en) 2008-01-24

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