KR101296082B1 - 실리콘 수지 조성물, 이것을 이용하는, 실리콘 수지 함유 구조체, 광반도체 소자 봉지체, 실리콘 수지 조성물의 사용 방법 - Google Patents

실리콘 수지 조성물, 이것을 이용하는, 실리콘 수지 함유 구조체, 광반도체 소자 봉지체, 실리콘 수지 조성물의 사용 방법 Download PDF

Info

Publication number
KR101296082B1
KR101296082B1 KR1020137012819A KR20137012819A KR101296082B1 KR 101296082 B1 KR101296082 B1 KR 101296082B1 KR 1020137012819 A KR1020137012819 A KR 1020137012819A KR 20137012819 A KR20137012819 A KR 20137012819A KR 101296082 B1 KR101296082 B1 KR 101296082B1
Authority
KR
South Korea
Prior art keywords
group
silicone resin
resin composition
zinc
compound
Prior art date
Application number
KR1020137012819A
Other languages
English (en)
Korean (ko)
Other versions
KR20130070653A (ko
Inventor
요시히토 타케이
카즈노리 이시카와
타케아키 사이키
Original Assignee
요코하마 고무 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 요코하마 고무 가부시키가이샤 filed Critical 요코하마 고무 가부시키가이샤
Publication of KR20130070653A publication Critical patent/KR20130070653A/ko
Application granted granted Critical
Publication of KR101296082B1 publication Critical patent/KR101296082B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C08K5/098—Metal salts of carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
KR1020137012819A 2010-11-17 2011-11-16 실리콘 수지 조성물, 이것을 이용하는, 실리콘 수지 함유 구조체, 광반도체 소자 봉지체, 실리콘 수지 조성물의 사용 방법 KR101296082B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010257188 2010-11-17
JPJP-P-2010-257188 2010-11-17
PCT/JP2011/076423 WO2012067153A1 (ja) 2010-11-17 2011-11-16 シリコーン樹脂組成物、これを用いる、シリコーン樹脂含有構造体、光半導体素子封止体、シリコーン樹脂組成物の使用方法

Publications (2)

Publication Number Publication Date
KR20130070653A KR20130070653A (ko) 2013-06-27
KR101296082B1 true KR101296082B1 (ko) 2013-08-19

Family

ID=46084076

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137012819A KR101296082B1 (ko) 2010-11-17 2011-11-16 실리콘 수지 조성물, 이것을 이용하는, 실리콘 수지 함유 구조체, 광반도체 소자 봉지체, 실리콘 수지 조성물의 사용 방법

Country Status (4)

Country Link
JP (1) JP5056998B2 (ja)
KR (1) KR101296082B1 (ja)
CN (1) CN103221485B (ja)
WO (1) WO2012067153A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6010358B2 (ja) * 2012-06-20 2016-10-19 京セラ株式会社 光半導体部品の硫化防止又は硫化遅延方法
CN104837930B (zh) 2012-12-07 2020-10-16 杜邦东丽特殊材料株式会社 可固化有机硅组合物和光学半导体器件
EP3059768A4 (en) * 2013-10-17 2017-05-03 Dow Corning Toray Co., Ltd. Curable silicone composition, and optical semiconductor device
KR102177502B1 (ko) * 2013-11-20 2020-11-11 삼성에스디아이 주식회사 전자 소자 보호용 통합 실리콘, 이를 이용한 회로 모듈 및 이의 제조 방법
KR20150086158A (ko) 2014-01-17 2015-07-27 주식회사 엘지화학 배리어 필름 및 그 제조 방법
US10516082B2 (en) * 2015-07-07 2019-12-24 Lumileds Holding B.V. Device for emitting light
KR20180100561A (ko) * 2016-01-08 2018-09-11 주식회사 다이셀 경화성 실리콘 수지 조성물 및 그의 경화물, 및 광 반도체 장치
US20180148600A1 (en) * 2016-11-30 2018-05-31 Momentive Performance Materials Inc. Abrasion resistant coating composition with inorganic metal oxides
JP6458902B1 (ja) * 2017-03-15 2019-01-30 東レ株式会社 感光性シロキサン樹脂組成物、硬化膜およびタッチパネル用部材
WO2018173996A1 (ja) * 2017-03-23 2018-09-27 横浜ゴム株式会社 硬化性樹脂組成物、積層体、及び、光半導体パッケージ
WO2019102655A1 (ja) * 2017-11-21 2019-05-31 東レ株式会社 シロキサン樹脂組成物、硬化膜および表示装置
JP7087630B2 (ja) * 2018-04-25 2022-06-21 三菱電機株式会社 映像表示ユニット及び映像表示装置
JP7140188B2 (ja) * 2018-06-28 2022-09-21 信越化学工業株式会社 繊維処理剤
EP3633262A1 (de) * 2018-10-04 2020-04-08 ZKW Group GmbH Projektionseinrichtung für ein kraftfahrzeugscheinwerferlichtmodul und verfahren zum herstellen einer projektionseinrichtung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04229902A (ja) * 1990-07-19 1992-08-19 Rhone Poulenc Chim 特に電線の被覆に用いられ得る熱硬化性オルガノポリシロキサン組成物
JP2003188503A (ja) 2001-12-14 2003-07-04 Shin Etsu Chem Co Ltd 実装回路板保護用コーティング剤、実装回路板における硫化防止方法、及び実装回路板
JP2007231030A (ja) 2006-02-27 2007-09-13 Shin Etsu Chem Co Ltd 皮膜形成シリコーンエマルジョン組成物
JP2008063542A (ja) 2006-09-11 2008-03-21 Dow Corning Toray Co Ltd 硬化性シリコーン組成物および電子部品

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4684551B2 (ja) * 2003-12-25 2011-05-18 東レ・ダウコーニング株式会社 変色防止又は変色低減方法及び変色防止又は変色低減剤並びに当該変色防止又は変色低減剤を含むジオルガノポリシロキサン組成物
EP2155821A1 (en) * 2007-06-08 2010-02-24 Dow Corning Corporation Silicone elastomers for high temperature performance

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04229902A (ja) * 1990-07-19 1992-08-19 Rhone Poulenc Chim 特に電線の被覆に用いられ得る熱硬化性オルガノポリシロキサン組成物
JP2003188503A (ja) 2001-12-14 2003-07-04 Shin Etsu Chem Co Ltd 実装回路板保護用コーティング剤、実装回路板における硫化防止方法、及び実装回路板
JP2007231030A (ja) 2006-02-27 2007-09-13 Shin Etsu Chem Co Ltd 皮膜形成シリコーンエマルジョン組成物
JP2008063542A (ja) 2006-09-11 2008-03-21 Dow Corning Toray Co Ltd 硬化性シリコーン組成物および電子部品

Also Published As

Publication number Publication date
JP5056998B2 (ja) 2012-10-24
WO2012067153A1 (ja) 2012-05-24
KR20130070653A (ko) 2013-06-27
CN103221485A (zh) 2013-07-24
CN103221485B (zh) 2014-10-29
JPWO2012067153A1 (ja) 2014-05-12

Similar Documents

Publication Publication Date Title
KR101296082B1 (ko) 실리콘 수지 조성물, 이것을 이용하는, 실리콘 수지 함유 구조체, 광반도체 소자 봉지체, 실리콘 수지 조성물의 사용 방법
JP5914991B2 (ja) 加熱硬化性シリコーン樹脂組成物
KR101158784B1 (ko) 실란올 축합 촉매, 가열 경화성 광반도체 봉지용 실리콘 수지 조성물 및 이것을 이용하는 광반도체 봉지체
KR101332171B1 (ko) 열경화형 실리콘 수지 조성물, 및, 이것을 이용하여 얻어지는 실리콘 수지 함유 구조체 및 광반도체 소자 봉지체
JP2012111850A (ja) シリコーン樹脂組成物、ならびに、これを用いて得られるシリコーン樹脂含有構造体および光半導体素子封止体
US9051435B2 (en) Silanol condensation catalyst, heat-curable silicone resin composition for sealing photosemiconductors and sealed photosemiconductor using same
WO2012117822A1 (ja) 加熱硬化性光半導体封止用シリコーン樹脂組成物およびこれを用いる光半導体パッケージ
KR101332172B1 (ko) 열경화형 실리콘 수지 조성물, 실리콘 수지 함유 구조체, 광반도체 소자 봉지체, 및, 실란올 축합 촉매
JP2011219729A (ja) 加熱硬化性シリコーン樹脂組成物およびこれを用いる光半導体封止体
JP2004359933A (ja) 光素子用封止材
KR101631048B1 (ko) 경화성 수지 조성물 및 그것을 사용한 반도체 장치
US20120211797A1 (en) Heat-curable silicone resin composition for sealing optical semiconductors, and a sealed optical semiconductor using the same
JP2011127011A (ja) 光半導体装置用封止剤及びそれを用いた光半導体装置
KR101563472B1 (ko) 경화성 수지 조성물 및 이를 사용한 반도체 장치
JP5728858B2 (ja) 金属層の腐食防止方法、耐硫化性を有する、積層体、半導体発光装置およびシリコーン樹脂組成物
US20110147722A1 (en) Semiconductor light emitting device comprising high performance resins
JP2012102293A (ja) 加熱硬化型光半導体封止用シリコーン組成物およびこれを用いる光半導体パッケージ
JP2012107127A (ja) シリコーン樹脂組成物、ならびに、これを用いて得られるシリコーン樹脂含有構造体および光半導体素子封止体
JP2012184353A (ja) 加熱硬化性光半導体封止用シリコーン樹脂組成物およびこれを用いる光半導体パッケージ
JP5609444B2 (ja) 金属層の腐食防止方法
TWI541290B (zh) 矽氧樹脂組合物、使用其之含有矽氧樹脂的結構體、光學半導體元件密封體、矽氧樹脂組合物的使用方法
JP5560982B2 (ja) シラノール縮合触媒、光半導体封止用熱硬化性シリコーン樹脂組成物およびこれを用いる封止体
KR20140110718A (ko) 경화성 조성물, 경화물 및 광반도체 장치

Legal Events

Date Code Title Description
A201 Request for examination
A302 Request for accelerated examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20160720

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20170720

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20180719

Year of fee payment: 6