KR101289305B1 - 반도체 장치의 제조 방법 및 기판 처리 장치 - Google Patents

반도체 장치의 제조 방법 및 기판 처리 장치 Download PDF

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KR101289305B1
KR101289305B1 KR1020110005783A KR20110005783A KR101289305B1 KR 101289305 B1 KR101289305 B1 KR 101289305B1 KR 1020110005783 A KR1020110005783 A KR 1020110005783A KR 20110005783 A KR20110005783 A KR 20110005783A KR 101289305 B1 KR101289305 B1 KR 101289305B1
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gas
processing
processing chamber
substrate
supply
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KR20110087218A (ko
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유키나오 카가
타츠유키 사이토
마사노리 사카이
타카시 요코가와
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020110005783A 2010-01-25 2011-01-20 반도체 장치의 제조 방법 및 기판 처리 장치 Active KR101289305B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2010-013014 2010-01-25
JP2010013014 2010-01-25
JPJP-P-2010-266422 2010-11-30
JP2010266422A JP2011168881A (ja) 2010-01-25 2010-11-30 半導体装置の製造方法及び基板処理装置

Related Child Applications (1)

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KR1020120135145A Division KR101317219B1 (ko) 2010-01-25 2012-11-27 반도체 장치의 제조 방법 및 기판 처리 장치

Publications (2)

Publication Number Publication Date
KR20110087218A KR20110087218A (ko) 2011-08-02
KR101289305B1 true KR101289305B1 (ko) 2013-07-24

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KR1020110005783A Active KR101289305B1 (ko) 2010-01-25 2011-01-20 반도체 장치의 제조 방법 및 기판 처리 장치
KR1020120135145A Active KR101317219B1 (ko) 2010-01-25 2012-11-27 반도체 장치의 제조 방법 및 기판 처리 장치
KR1020130043902A Active KR101345120B1 (ko) 2010-01-25 2013-04-22 반도체 장치의 제조 방법 및 기판 처리 장치

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KR1020130043902A Active KR101345120B1 (ko) 2010-01-25 2013-04-22 반도체 장치의 제조 방법 및 기판 처리 장치

Country Status (4)

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US (2) US8691708B2 (https=)
JP (1) JP2011168881A (https=)
KR (3) KR101289305B1 (https=)
TW (1) TWI483313B (https=)

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JP5610438B2 (ja) * 2010-01-29 2014-10-22 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
JP2013133521A (ja) * 2011-12-27 2013-07-08 Tokyo Electron Ltd 成膜方法
JP6078279B2 (ja) 2012-09-20 2017-02-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6245643B2 (ja) * 2013-03-28 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6118197B2 (ja) * 2013-07-02 2017-04-19 東京エレクトロン株式会社 成膜方法
JP6164775B2 (ja) * 2014-08-21 2017-07-19 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
KR102137477B1 (ko) 2016-03-29 2020-07-24 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
CN111066124A (zh) * 2017-09-25 2020-04-24 株式会社国际电气 半导体装置的制造方法、基板处理装置及程序
CN109576672A (zh) * 2017-09-28 2019-04-05 北京北方华创微电子装备有限公司 一种原子层沉积方法
CN110875181A (zh) * 2018-08-30 2020-03-10 长鑫存储技术有限公司 介电材料层及其形成方法、应用其的半导体结构
JP6903040B2 (ja) 2018-09-21 2021-07-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
CN111101116B (zh) * 2018-10-25 2023-08-18 北京北方华创微电子装备有限公司 工艺气体传输装置、原子层沉积方法及沉积设备
WO2020214607A1 (en) * 2019-04-15 2020-10-22 Applied Materials, Inc. Electrostatic chucking process
US11482413B2 (en) 2019-10-08 2022-10-25 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US12272599B2 (en) 2019-10-08 2025-04-08 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US12283486B2 (en) * 2019-10-08 2025-04-22 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
WO2021079779A1 (ja) * 2019-10-23 2021-04-29 東京エレクトロン株式会社 基板洗浄方法、および基板洗浄装置
JP7166367B2 (ja) * 2021-01-14 2022-11-07 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
WO2022204663A1 (en) * 2021-03-22 2022-09-29 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same

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KR20080003920A (ko) * 2005-05-23 2008-01-08 동경 엘렉트론 주식회사 성막 방법 및 컴퓨터에 의해 독해가능한 기억매체

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US20140162454A1 (en) 2014-06-12
KR20110087218A (ko) 2011-08-02
KR101317219B1 (ko) 2013-10-15
US8691708B2 (en) 2014-04-08
KR20130007507A (ko) 2013-01-18
JP2011168881A (ja) 2011-09-01
KR101345120B1 (ko) 2013-12-26
TWI483313B (zh) 2015-05-01
US20110183519A1 (en) 2011-07-28
TW201135844A (en) 2011-10-16
KR20130051459A (ko) 2013-05-20

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