TWI483313B - 半導體裝置之製造方法及基板處理裝置 - Google Patents

半導體裝置之製造方法及基板處理裝置 Download PDF

Info

Publication number
TWI483313B
TWI483313B TW100102210A TW100102210A TWI483313B TW I483313 B TWI483313 B TW I483313B TW 100102210 A TW100102210 A TW 100102210A TW 100102210 A TW100102210 A TW 100102210A TW I483313 B TWI483313 B TW I483313B
Authority
TW
Taiwan
Prior art keywords
gas
processing
substrate
processing chamber
film
Prior art date
Application number
TW100102210A
Other languages
English (en)
Chinese (zh)
Other versions
TW201135844A (en
Inventor
加我友紀直
齋藤達之
境正憲
橫川貴史
Original Assignee
日立國際電氣股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立國際電氣股份有限公司 filed Critical 日立國際電氣股份有限公司
Publication of TW201135844A publication Critical patent/TW201135844A/zh
Application granted granted Critical
Publication of TWI483313B publication Critical patent/TWI483313B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW100102210A 2010-01-25 2011-01-21 半導體裝置之製造方法及基板處理裝置 TWI483313B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010013014 2010-01-25
JP2010266422A JP2011168881A (ja) 2010-01-25 2010-11-30 半導体装置の製造方法及び基板処理装置

Publications (2)

Publication Number Publication Date
TW201135844A TW201135844A (en) 2011-10-16
TWI483313B true TWI483313B (zh) 2015-05-01

Family

ID=44309276

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100102210A TWI483313B (zh) 2010-01-25 2011-01-21 半導體裝置之製造方法及基板處理裝置

Country Status (4)

Country Link
US (2) US8691708B2 (https=)
JP (1) JP2011168881A (https=)
KR (3) KR101289305B1 (https=)
TW (1) TWI483313B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5610438B2 (ja) * 2010-01-29 2014-10-22 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
JP2013133521A (ja) * 2011-12-27 2013-07-08 Tokyo Electron Ltd 成膜方法
JP6078279B2 (ja) 2012-09-20 2017-02-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6245643B2 (ja) * 2013-03-28 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6118197B2 (ja) * 2013-07-02 2017-04-19 東京エレクトロン株式会社 成膜方法
JP6164775B2 (ja) * 2014-08-21 2017-07-19 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
KR102137477B1 (ko) 2016-03-29 2020-07-24 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
CN111066124A (zh) * 2017-09-25 2020-04-24 株式会社国际电气 半导体装置的制造方法、基板处理装置及程序
CN109576672A (zh) * 2017-09-28 2019-04-05 北京北方华创微电子装备有限公司 一种原子层沉积方法
CN110875181A (zh) * 2018-08-30 2020-03-10 长鑫存储技术有限公司 介电材料层及其形成方法、应用其的半导体结构
JP6903040B2 (ja) 2018-09-21 2021-07-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
CN111101116B (zh) * 2018-10-25 2023-08-18 北京北方华创微电子装备有限公司 工艺气体传输装置、原子层沉积方法及沉积设备
WO2020214607A1 (en) * 2019-04-15 2020-10-22 Applied Materials, Inc. Electrostatic chucking process
US11482413B2 (en) 2019-10-08 2022-10-25 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US12272599B2 (en) 2019-10-08 2025-04-08 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US12283486B2 (en) * 2019-10-08 2025-04-22 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
WO2021079779A1 (ja) * 2019-10-23 2021-04-29 東京エレクトロン株式会社 基板洗浄方法、および基板洗浄装置
JP7166367B2 (ja) * 2021-01-14 2022-11-07 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
WO2022204663A1 (en) * 2021-03-22 2022-09-29 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010097163A (ko) * 2000-04-20 2001-11-08 윤종용 원자층 증착방법을 이용한 장벽 금속막의 제조방법
US20090104351A1 (en) * 2006-06-20 2009-04-23 Tokyo Electron Limited Film forming apparatus and method, gas supply device and storage medium

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308655A (en) * 1991-08-16 1994-05-03 Materials Research Corporation Processing for forming low resistivity titanium nitride films
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
JP2002289615A (ja) * 2001-03-26 2002-10-04 Tokyo Electron Ltd 薄膜形成方法及び薄膜形成装置
JP4178776B2 (ja) * 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
JP2005505146A (ja) * 2001-10-12 2005-02-17 ユナキス・バルツェルス・アクチェンゲゼルシャフト 構造エレメントの製造方法および超真空ｃｖｄ反応装置
JP4214795B2 (ja) * 2003-02-20 2009-01-28 東京エレクトロン株式会社 成膜方法
JP4583764B2 (ja) * 2004-01-14 2010-11-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TW200603287A (en) 2004-03-26 2006-01-16 Ulvac Inc Unit layer posttreating catalytic chemical vapor deposition apparatus and method of film formation therewith
JP4396547B2 (ja) 2004-06-28 2010-01-13 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
KR100712502B1 (ko) * 2004-11-30 2007-05-02 삼성전자주식회사 금속-유전막-금속 캐패시터 및 그 제조방법
JP4947922B2 (ja) * 2005-05-23 2012-06-06 東京エレクトロン株式会社 成膜方法およびコンピュータにより読み取り可能な記憶媒体
JP4727667B2 (ja) 2005-08-16 2011-07-20 株式会社日立国際電気 薄膜形成方法および半導体デバイスの製造方法
US7833906B2 (en) * 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010097163A (ko) * 2000-04-20 2001-11-08 윤종용 원자층 증착방법을 이용한 장벽 금속막의 제조방법
US20090104351A1 (en) * 2006-06-20 2009-04-23 Tokyo Electron Limited Film forming apparatus and method, gas supply device and storage medium

Also Published As

Publication number Publication date
US20140162454A1 (en) 2014-06-12
KR20110087218A (ko) 2011-08-02
KR101317219B1 (ko) 2013-10-15
US8691708B2 (en) 2014-04-08
KR20130007507A (ko) 2013-01-18
JP2011168881A (ja) 2011-09-01
KR101345120B1 (ko) 2013-12-26
KR101289305B1 (ko) 2013-07-24
US20110183519A1 (en) 2011-07-28
TW201135844A (en) 2011-10-16
KR20130051459A (ko) 2013-05-20

Similar Documents

Publication Publication Date Title
TWI483313B (zh) 半導體裝置之製造方法及基板處理裝置
TWI415190B (zh) 半導體裝置之製造方法及基板處理裝置
JP5087657B2 (ja) 半導体装置の製造方法及び基板処理装置
KR101814243B1 (ko) 반응관, 기판 처리 장치 및 반도체 장치의 제조 방법
JP5610438B2 (ja) 基板処理装置及び半導体装置の製造方法
JP5692842B2 (ja) 半導体装置の製造方法及び基板処理装置
TWI446404B (zh) 半導體裝置的製造方法、清潔方法及基板處理裝置
JP5787488B2 (ja) 半導体装置の製造方法及び基板処理装置
TWI428986B (zh) 半導體裝置之製造方法及基板處理裝置
JP5963456B2 (ja) 半導体装置の製造方法、基板処理装置、及び基板処理方法
JP5421812B2 (ja) 半導体基板の成膜装置及び方法
JP2010118441A (ja) 半導体装置の製造方法
JP5385439B2 (ja) 半導体装置の製造方法及び基板処理装置
JP2011151294A (ja) 半導体装置の製造方法
JP2008227259A (ja) 基板処理装置