JP6118197B2 - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
- Publication number
- JP6118197B2 JP6118197B2 JP2013138849A JP2013138849A JP6118197B2 JP 6118197 B2 JP6118197 B2 JP 6118197B2 JP 2013138849 A JP2013138849 A JP 2013138849A JP 2013138849 A JP2013138849 A JP 2013138849A JP 6118197 B2 JP6118197 B2 JP 6118197B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- film forming
- forming method
- cycle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000151 deposition Methods 0.000 title description 5
- 239000007789 gas Substances 0.000 claims description 136
- 238000000034 method Methods 0.000 claims description 123
- 238000000926 separation method Methods 0.000 claims description 56
- 230000008569 process Effects 0.000 claims description 52
- 238000012545 processing Methods 0.000 claims description 47
- 230000015572 biosynthetic process Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 20
- 230000006872 improvement Effects 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000002052 molecular layer Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 204
- 235000012431 wafers Nutrition 0.000 description 64
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 61
- 239000012495 reaction gas Substances 0.000 description 41
- 230000000694 effects Effects 0.000 description 36
- 238000005755 formation reaction Methods 0.000 description 32
- 238000002407 reforming Methods 0.000 description 28
- 239000002245 particle Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 16
- 238000000231 atomic layer deposition Methods 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000000137 annealing Methods 0.000 description 9
- 238000010926 purge Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- -1 temperature Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01002—Helium [He]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
前記1サイクルの時間を0.5秒以下に設定して前記成膜工程を行い、
前記1サイクルを所定回数繰り返し、所定の膜厚の成膜を行った後、前記第1の処理ガスを供給せずに、前記第2の処理ガスを供給する膜質改善工程を所定時間行い、
該膜質改善工程の1サイクルの時間は前記成膜工程の前記1サイクルの時間よりも長く設定されている。
図1は、本発明の実施形態に係る成膜方法を実施するのに好適な成膜装置の一例の断面図であり、図2は、本発明の実施形態に係る成膜方法を実施するのに好適な成膜装置の一例の斜視図である。また、図3は、本発明の実施形態に係る成膜方法を実施するのに好適な成膜装置の一例の上面図である。
次に、本発明の実施形態による成膜方法について、図6を参照しながら説明する。以下の説明では、上述の成膜装置を用いる場合を例にとる。
図9は、本実施形態に係る成膜方法を実施した実施結果を示した図である。図9において、横軸が膜質改善工程におけるNH3改質処理の処理時間(sec)、縦軸がTiN膜の抵抗値(Ω/cm)を示している。
2 回転テーブル
4 凸状部
11 天板
12 容器本体
15 搬送口
24 凹部(ウエハ載置部)
31、32 反応ガスノズル
41、42 分離ガスノズル
D 分離領域
P1 第1の処理領域
P2 第2の処理領域
H 分離空間
W ウエハ
Claims (13)
- チャンバ内で、基板上に互いに反応する金属を含む第1の処理ガスと窒素を含む第2の処理ガスを順次供給するとともに、該第1の処理ガスと第2の処理ガスを1回ずつ前記基板上に供給した段階を1サイクルとし、該1サイクルを繰り返すことにより前記基板上に前記第1の処理ガスと前記第2の処理ガスの反応生成物の原子層又は分子層を堆積させて成膜を行う成膜工程を有する成膜方法であって、
前記1サイクルの時間を0.5秒以下に設定して前記成膜工程を行い、
前記1サイクルを所定回数繰り返し、所定の膜厚の成膜を行った後、前記第1の処理ガスを供給せずに、前記第2の処理ガスを供給する膜質改善工程を所定時間行い、
該膜質改善工程の1サイクルの時間は前記成膜工程の前記1サイクルの時間よりも長い成膜方法。 - 前記成膜工程の前記1サイクルの時間を、0.25〜0.5秒の範囲に設定した請求項1に記載の成膜方法。
- 前記基板は、前記基板を載置可能な基板載置領域を有する回転テーブル上に載置され、
該回転テーブルの上方に、前記第1の処理ガスを供給する第1の処理領域と、前記第2の処理ガスを供給する第2の処理領域と、該第1の処理領域と該第2の処理領域とを分離する分離領域とが該回転テーブルの回転方向に沿って設けられ、
該回転テーブルを1回転させたときに前記1サイクルを終了する請求項1又は2に記載の成膜方法。 - 前記成膜工程の前記1サイクルの時間が0.5秒であるときは前記回転テーブルの回転速度は120rpmであり、0.25秒であるときは前記回転テーブルの回転速度は240rpmである請求項3に記載の成膜方法。
- 前記分離領域では、不活性ガスが供給される請求項3又は4に記載の成膜方法。
- 前記膜質改善工程においては、前記回転テーブルの回転速度は10〜30rpmに設定されている請求項4に記載の成膜方法。
- 前記金属を含むガスはチタン含有ガスであり、
前記窒素を含むガスはアンモニア含有ガスである請求項1乃至6のいずれか一項に記載の成膜方法。 - 前記チタン含有ガスはTiCl4であり、
前記アンモニア含有ガスはNH3である請求項7に記載の成膜方法。 - 前記基板は、300℃以上に加熱された請求項1乃至8のいずれか一項に記載の成膜方法。
- 前記基板は、550℃以上に加熱された請求項9に記載の成膜方法。
- 前記基板は、610℃以下に加熱された請求項9又は10に記載の成膜方法。
- 前記1サイクルを所定回数繰り返し、所定の膜厚の成膜を行った後、
前記第1の処理ガスを供給せずに、前記第2の処理ガスを供給する膜質改善工程を所定時間行う請求項1乃至11のいずれか一項に記載の成膜方法。 - 前記膜質改善工程において、前記基板は、前記成膜工程と同一の温度で加熱される請求項1乃至12のいずれか一項に記載の成膜方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013138849A JP6118197B2 (ja) | 2013-07-02 | 2013-07-02 | 成膜方法 |
US14/308,880 US9136133B2 (en) | 2013-07-02 | 2014-06-19 | Method of depositing film |
KR1020140081847A KR101775203B1 (ko) | 2013-07-02 | 2014-07-01 | 성막 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013138849A JP6118197B2 (ja) | 2013-07-02 | 2013-07-02 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015010271A JP2015010271A (ja) | 2015-01-19 |
JP6118197B2 true JP6118197B2 (ja) | 2017-04-19 |
Family
ID=52133086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013138849A Active JP6118197B2 (ja) | 2013-07-02 | 2013-07-02 | 成膜方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9136133B2 (ja) |
JP (1) | JP6118197B2 (ja) |
KR (1) | KR101775203B1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9416448B2 (en) * | 2008-08-29 | 2016-08-16 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method |
JP5107185B2 (ja) | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
US9297072B2 (en) | 2008-12-01 | 2016-03-29 | Tokyo Electron Limited | Film deposition apparatus |
JP6262115B2 (ja) | 2014-02-10 | 2018-01-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP6548586B2 (ja) | 2016-02-03 | 2019-07-24 | 東京エレクトロン株式会社 | 成膜方法 |
JP6733516B2 (ja) | 2016-11-21 | 2020-08-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP6906439B2 (ja) * | 2017-12-21 | 2021-07-21 | 東京エレクトロン株式会社 | 成膜方法 |
CN114420670A (zh) * | 2020-10-28 | 2022-04-29 | 上海华力集成电路制造有限公司 | 通孔及其制造方法 |
WO2022204663A1 (en) * | 2021-03-22 | 2022-09-29 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100444149B1 (ko) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | Ald 박막증착설비용 클리닝방법 |
US6528430B2 (en) * | 2001-05-01 | 2003-03-04 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3 |
JP4583764B2 (ja) | 2004-01-14 | 2010-11-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN101325174B (zh) | 2004-04-09 | 2011-06-15 | 东京毅力科创株式会社 | Ti膜及TiN膜的成膜方法以及接触结构 |
US20060272577A1 (en) * | 2005-06-03 | 2006-12-07 | Ming Mao | Method and apparatus for decreasing deposition time of a thin film |
JP4661990B2 (ja) * | 2008-06-27 | 2011-03-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、基板処理装置及び記憶媒体 |
US8465591B2 (en) * | 2008-06-27 | 2013-06-18 | Tokyo Electron Limited | Film deposition apparatus |
JP5482196B2 (ja) * | 2009-12-25 | 2014-04-23 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP2011168881A (ja) * | 2010-01-25 | 2011-09-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP5423529B2 (ja) * | 2010-03-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP2013133521A (ja) * | 2011-12-27 | 2013-07-08 | Tokyo Electron Ltd | 成膜方法 |
-
2013
- 2013-07-02 JP JP2013138849A patent/JP6118197B2/ja active Active
-
2014
- 2014-06-19 US US14/308,880 patent/US9136133B2/en active Active
- 2014-07-01 KR KR1020140081847A patent/KR101775203B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20150011087A1 (en) | 2015-01-08 |
KR20150004286A (ko) | 2015-01-12 |
KR101775203B1 (ko) | 2017-09-05 |
JP2015010271A (ja) | 2015-01-19 |
US9136133B2 (en) | 2015-09-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6118197B2 (ja) | 成膜方法 | |
JP5482196B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
JP6545094B2 (ja) | 成膜方法及び成膜装置 | |
JP6087236B2 (ja) | 成膜方法 | |
JP5097554B2 (ja) | 半導体装置の製造方法、基板処理方法および基板処理装置 | |
JP5599350B2 (ja) | 成膜装置及び成膜方法 | |
JP5823922B2 (ja) | 成膜方法 | |
JP2019167634A (ja) | タングステン膜の成膜方法および成膜装置 | |
JP6723135B2 (ja) | 保護膜形成方法 | |
JP6478847B2 (ja) | 基板処理装置 | |
JP2013133521A (ja) | 成膜方法 | |
TWI604083B (zh) | 成膜方法 | |
JP6010451B2 (ja) | 成膜方法 | |
JP5750190B2 (ja) | 成膜装置及び成膜方法 | |
JP5886730B2 (ja) | 成膜方法、その成膜方法のプログラム、そのプログラムを記録した記録媒体、及び、成膜装置 | |
JP6071537B2 (ja) | 成膜方法 | |
JP6971887B2 (ja) | 成膜方法及び成膜装置 | |
JP5913079B2 (ja) | 成膜方法 | |
JP2015070095A (ja) | 基板処理装置及び基板処理方法 | |
KR20210021918A (ko) | 성막 방법 및 성막 장치 | |
JP6096955B2 (ja) | 成膜方法 | |
JP6441050B2 (ja) | 成膜方法 | |
JP6906439B2 (ja) | 成膜方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151211 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160818 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170303 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170321 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170324 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6118197 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |