KR101270705B1 - 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널 - Google Patents

박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널 Download PDF

Info

Publication number
KR101270705B1
KR101270705B1 KR1020060093519A KR20060093519A KR101270705B1 KR 101270705 B1 KR101270705 B1 KR 101270705B1 KR 1020060093519 A KR1020060093519 A KR 1020060093519A KR 20060093519 A KR20060093519 A KR 20060093519A KR 101270705 B1 KR101270705 B1 KR 101270705B1
Authority
KR
South Korea
Prior art keywords
electrode
line
gate
forming
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020060093519A
Other languages
English (en)
Korean (ko)
Other versions
KR20080028130A (ko
Inventor
김봉주
유춘기
Original Assignee
삼성디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성디스플레이 주식회사 filed Critical 삼성디스플레이 주식회사
Priority to KR1020060093519A priority Critical patent/KR101270705B1/ko
Priority to JP2007011807A priority patent/JP5190593B2/ja
Priority to TW096126411A priority patent/TWI412849B/zh
Priority to US11/860,864 priority patent/US8031285B2/en
Publication of KR20080028130A publication Critical patent/KR20080028130A/ko
Application granted granted Critical
Publication of KR101270705B1 publication Critical patent/KR101270705B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
KR1020060093519A 2006-09-26 2006-09-26 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널 Active KR101270705B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020060093519A KR101270705B1 (ko) 2006-09-26 2006-09-26 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널
JP2007011807A JP5190593B2 (ja) 2006-09-26 2007-01-22 薄膜トランジスタ基板及びこの製造方法、並びに薄膜トランジスタ基板これを備えた液晶表示パネル
TW096126411A TWI412849B (zh) 2006-09-26 2007-07-19 薄膜電晶體基板，製造該基板之方法以及具有該基板之液晶顯示器面板
US11/860,864 US8031285B2 (en) 2006-09-26 2007-09-25 Thin film transistor substrate, method of manufacturing the same, and liquid crystal display panel having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060093519A KR101270705B1 (ko) 2006-09-26 2006-09-26 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널

Publications (2)

Publication Number Publication Date
KR20080028130A KR20080028130A (ko) 2008-03-31
KR101270705B1 true KR101270705B1 (ko) 2013-06-03

Family

ID=39224531

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060093519A Active KR101270705B1 (ko) 2006-09-26 2006-09-26 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널

Country Status (4)

Country Link
US (1) US8031285B2 (https=)
JP (1) JP5190593B2 (https=)
KR (1) KR101270705B1 (https=)
TW (1) TWI412849B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021261830A1 (en) 2020-06-23 2021-12-30 Samsung Electronics Co., Ltd. Video quality assessment method and apparatus

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101219038B1 (ko) * 2004-10-26 2013-01-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20090049659A (ko) * 2007-11-14 2009-05-19 삼성전자주식회사 표시 기판 및 이를 구비한 표시 패널
KR101889287B1 (ko) 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101253049B1 (ko) * 2009-05-07 2013-04-11 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
US20110085121A1 (en) * 2009-10-08 2011-04-14 Hydis Technologies Co., Ltd. Fringe Field Switching Mode Liquid Crystal Display Device and Method of Fabricating the Same
KR101777839B1 (ko) 2010-07-16 2017-09-27 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
CN103364987B (zh) 2013-07-19 2015-11-25 深圳市华星光电技术有限公司 一种阵列基板及显示面板
US20150035741A1 (en) * 2013-07-30 2015-02-05 Samsung Display Co., Ltd. Display apparatus
KR102131191B1 (ko) * 2013-09-30 2020-07-08 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법
CN203941365U (zh) * 2014-07-09 2014-11-12 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置
JP6591194B2 (ja) * 2015-05-15 2019-10-16 株式会社ジャパンディスプレイ 液晶表示装置
CN105093746B (zh) * 2015-08-10 2017-10-17 深圳市华星光电技术有限公司 阵列基板及液晶显示面板
US11164897B2 (en) * 2019-10-28 2021-11-02 Sharp Kabushiki Kaisha Display device
KR102799217B1 (ko) * 2020-04-20 2025-04-22 삼성디스플레이 주식회사 표시 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000014701A (ko) * 1998-08-24 2000-03-15 김영환 고개구율 및 고투과율을 갖는 액정표시장치 및 그 제조방법
KR20010109681A (ko) * 2000-06-01 2001-12-12 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 액정 표시장치의 제조방법
KR20020002052A (ko) * 2000-06-29 2002-01-09 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 모드 액정 표시 장치의 제조방법
KR20040016571A (ko) * 2002-08-19 2004-02-25 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정 디스플레이 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW387997B (en) * 1997-12-29 2000-04-21 Hyundai Electronics Ind Liquid crystal display and fabrication method
KR100494682B1 (ko) * 1999-06-30 2005-06-13 비오이 하이디스 테크놀로지 주식회사 액정표시소자 및 그 제조방법
KR100620322B1 (ko) * 2000-07-10 2006-09-13 엘지.필립스 엘시디 주식회사 횡전계 방식의 액정 표시장치 및 그 제조방법
TW594317B (en) * 2003-02-27 2004-06-21 Hannstar Display Corp Pixel structure of in-plane switching liquid crystal display device
TWI282476B (en) * 2003-12-23 2007-06-11 Innolux Display Corp Liquid crystal display device
KR101217661B1 (ko) * 2005-03-25 2013-01-02 엘지디스플레이 주식회사 횡전계 방식 액정표시장치용 어레이 기판과 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000014701A (ko) * 1998-08-24 2000-03-15 김영환 고개구율 및 고투과율을 갖는 액정표시장치 및 그 제조방법
KR20010109681A (ko) * 2000-06-01 2001-12-12 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 액정 표시장치의 제조방법
KR20020002052A (ko) * 2000-06-29 2002-01-09 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 모드 액정 표시 장치의 제조방법
KR20040016571A (ko) * 2002-08-19 2004-02-25 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정 디스플레이 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021261830A1 (en) 2020-06-23 2021-12-30 Samsung Electronics Co., Ltd. Video quality assessment method and apparatus
EP4088452A1 (en) 2020-06-23 2022-11-16 Samsung Electronics Co., Ltd. Video quality assessment method and apparatus

Also Published As

Publication number Publication date
TW200815883A (en) 2008-04-01
JP5190593B2 (ja) 2013-04-24
TWI412849B (zh) 2013-10-21
US20080074572A1 (en) 2008-03-27
JP2008083662A (ja) 2008-04-10
KR20080028130A (ko) 2008-03-31
US8031285B2 (en) 2011-10-04

Similar Documents

Publication Publication Date Title
JP5190593B2 (ja) 薄膜トランジスタ基板及びこの製造方法、並びに薄膜トランジスタ基板これを備えた液晶表示パネル
KR101250319B1 (ko) 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판과 그 제조방법
KR101294232B1 (ko) 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및이의 제조 방법
KR101894328B1 (ko) 박막 트랜지스터 기판 및 그 제조 방법
US8450744B2 (en) High light transmittance in-plane switching liquid crystal display device and method for manufacturing the same
US8803147B2 (en) Array substrate for fringe field switching mode liquid crystal display device and method of manufacturing the same
CN102769013A (zh) 薄膜晶体管基板及其制造方法
KR101474774B1 (ko) 박막 트랜지스터 표시판 및 이의 제조 방법
KR20110076372A (ko) 액정표시장치용 어레이 기판의 제조방법
CN100514165C (zh) 用于液晶显示器件的阵列基板及其制造方法
KR20010038386A (ko) 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치
KR101137861B1 (ko) 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조방법
KR20080080805A (ko) 액정표시패널 및 그 제조 방법
KR20010038385A (ko) 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치
KR101626899B1 (ko) 박막 트랜지스터 기판 및 이의 제조 방법
KR100731037B1 (ko) 액정표시장치 및 그 제조방법
CN100498486C (zh) 用于液晶显示装置的阵列基板及其制造方法
KR101725424B1 (ko) 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조방법
KR20100021152A (ko) 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조방법
KR101423909B1 (ko) 표시 기판 및 이를 구비하는 액정 표시 장치
KR101970550B1 (ko) 박막트랜지스터 기판 및 그 제조 방법
KR101659259B1 (ko) 횡전계 방식 액정표시장치 및 그 제조방법
KR20080048261A (ko) 수평 전계 인가형 액정표시패널 및 그 제조방법
KR20080056811A (ko) 박막 트랜지스터 기판, 그 제조 방법 및 이를 구비하는액정 표시 패널
KR20110067369A (ko) 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20160429

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20170428

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20180502

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20190429

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20200428

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20210503

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20220425

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13