KR101238580B1 - 저-다분산성 광형상화가능한 아크릴 중합체, 포토레지스트및 마이크로리소그래피 방법 - Google Patents

저-다분산성 광형상화가능한 아크릴 중합체, 포토레지스트및 마이크로리소그래피 방법 Download PDF

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Publication number
KR101238580B1
KR101238580B1 KR1020067005581A KR20067005581A KR101238580B1 KR 101238580 B1 KR101238580 B1 KR 101238580B1 KR 1020067005581 A KR1020067005581 A KR 1020067005581A KR 20067005581 A KR20067005581 A KR 20067005581A KR 101238580 B1 KR101238580 B1 KR 101238580B1
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alkyl
meth
acrylate
group
substituted
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Korean (ko)
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KR20060119985A (ko
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윌리엄 브라운 판햄
미카엘 프리드
프랑크 레오나르드 3세 스카트
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이 아이 듀폰 디 네모아 앤드 캄파니
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/38—Polymerisation using regulators, e.g. chain terminating agents, e.g. telomerisation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C35/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C35/22—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system
    • C07C35/23—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings
    • C07C35/28—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms
    • C07C35/29—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms being a (2.2.1) system
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/22—Esters containing halogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
KR1020067005581A 2003-09-22 2004-09-22 저-다분산성 광형상화가능한 아크릴 중합체, 포토레지스트및 마이크로리소그래피 방법 Expired - Fee Related KR101238580B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US50503803P 2003-09-22 2003-09-22
US60/505,038 2003-09-22
PCT/US2004/031242 WO2005031461A1 (en) 2003-09-22 2004-09-22 Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography

Publications (2)

Publication Number Publication Date
KR20060119985A KR20060119985A (ko) 2006-11-24
KR101238580B1 true KR101238580B1 (ko) 2013-02-28

Family

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KR1020067005581A Expired - Fee Related KR101238580B1 (ko) 2003-09-22 2004-09-22 저-다분산성 광형상화가능한 아크릴 중합체, 포토레지스트및 마이크로리소그래피 방법

Country Status (8)

Country Link
US (1) US7696292B2 (enExample)
EP (2) EP2287671B1 (enExample)
JP (1) JP2007520587A (enExample)
KR (1) KR101238580B1 (enExample)
CN (1) CN1853139A (enExample)
DE (1) DE602004032151D1 (enExample)
TW (1) TW200525292A (enExample)
WO (1) WO2005031461A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230055531A (ko) 2021-10-19 2023-04-26 인하대학교 산학협력단 연속 흐름 반응 공정을 이용한 자외선 리소그래피용 포토레지스트 고분자 및 이의 제조방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7713294B2 (en) * 2002-08-28 2010-05-11 Nomir Medical Technologies, Inc. Near infrared microbial elimination laser systems (NIMEL)
JP4705426B2 (ja) * 2005-07-14 2011-06-22 互応化学工業株式会社 プリント配線板製造用アルカリ現像型感光性レジストインキ組成物、その硬化物およびプリント配線板
JP4960614B2 (ja) * 2005-08-12 2012-06-27 セントラル硝子株式会社 α−置換アクリル酸ノルボルナニル類及びその製造方法、並びにそれを用いた共重合体
JP4961707B2 (ja) * 2005-09-29 2012-06-27 Ｊｓｒ株式会社 樹脂の合成法
JP4650630B2 (ja) * 2005-10-07 2011-03-16 Ｊｓｒ株式会社 スペーサー用感放射線性樹脂組成物、スペーサー、およびその形成方法
WO2008021291A2 (en) * 2006-08-14 2008-02-21 E. I. Du Pont De Nemours And Company Fluorinated polymers for use in immersion lithography
KR101400824B1 (ko) 2006-09-25 2014-05-29 후지필름 가부시키가이샤 레지스트 조성물, 이 레지스트 조성물에 사용되는 수지, 이수지의 합성에 사용되는 화합물, 및 상기 레지스트조성물을 사용한 패턴형성방법
KR101446819B1 (ko) * 2006-12-22 2014-10-01 마루젠 세끼유가가꾸 가부시키가이샤 반도체 리소그래피용 중합체의 제조 방법
US20080248418A1 (en) * 2007-04-04 2008-10-09 William Brown Farnham Synthesis of fluoroalcohol-substituted (meth)acrylate esters and polymers derived therefrom
JP5834630B2 (ja) * 2011-02-04 2015-12-24 日立化成株式会社 樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP6031420B2 (ja) 2012-08-31 2016-11-24 ダウ グローバル テクノロジーズ エルエルシー 光酸発生剤を含む末端基を含むポリマー、前記ポリマーを含むフォトレジストおよびデバイスの製造方法
JP5937549B2 (ja) * 2012-08-31 2016-06-22 ダウ グローバル テクノロジーズ エルエルシー 光酸発生剤化合物、光酸発生剤化合物を含有する末端基を含むポリマー、および製造方法
EP2970538B1 (en) 2013-03-15 2021-10-20 DuPont Electronics, Inc. Polymerization process protection means
KR20150080443A (ko) * 2013-12-31 2015-07-09 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 오버코트 조성물
US20210040253A1 (en) * 2018-03-19 2021-02-11 Daicel Corporation Photoresist resin, production method for photoresist resin, photoresist resin composition, and pattern formation method
JP7310471B2 (ja) * 2019-09-12 2023-07-19 Jsr株式会社 パターン形成方法及び組成物
CN113861332B (zh) * 2021-09-30 2023-02-24 宁波南大光电材料有限公司 一种光刻胶树脂及其聚合方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010033296A (ko) * 1997-12-18 2001-04-25 커먼웰쓰 사이언티픽 앤 인더스트리알 리서치 오거니제이션 리빙 특성의 중합 방법 및 이 방법으로 제조된 중합체
KR20030011581A (ko) * 2001-07-24 2003-02-11 샌트랄 글래스 컴퍼니 리미티드 불소 함유 중합성 단량체 및 이를 이용한 고분자
WO2003075094A1 (en) 2002-03-01 2003-09-12 E.I. Du Pont De Nemours And Company Fluorinated copolymers for microlithography

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196204A (ja) * 1987-10-08 1989-04-14 Hitachi Chem Co Ltd セメント用樹脂組成物
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JPH0641245A (ja) * 1992-07-24 1994-02-15 Shin Etsu Chem Co Ltd 単分散性共重合体及びその製造方法
US6200725B1 (en) * 1995-06-28 2001-03-13 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
WO1998001478A1 (en) 1996-07-10 1998-01-15 E.I. Du Pont De Nemours And Company Polymerization with living characteristics
CA2213050A1 (en) 1996-08-21 1998-02-21 John S. Manka Compositions containing thiocarbonates and acylated-nitrogen containing compounds
IL139666A0 (en) * 1997-07-21 2002-02-10 Commw Scient Ind Res Org Synthesis of dithioester chain transfer agents and use of bis (thioacyl) disulfides or dithioesters as chain transfer agents
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
HK1048309A1 (zh) 1999-05-04 2003-03-28 纳幕尔杜邦公司 多氟化环氧化物和有关聚合物以及制备方法
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP3672780B2 (ja) * 1999-11-29 2005-07-20 セントラル硝子株式会社 ポジ型レジスト組成物およびパターン形成方法
FR2809829B1 (fr) 2000-06-05 2002-07-26 Rhodia Chimie Sa Nouvelle composition photosensible pour la fabrication de photoresist
US6441115B1 (en) * 2000-06-30 2002-08-27 Everlight Usa, Inc. Photosensitive polymer
TW200403522A (en) * 2002-03-01 2004-03-01 Shipley Co Llc Photoresist compositions
TWI314247B (en) 2002-03-04 2009-09-01 Shipley Co Llc Megative photordsists for short wavelength imaging
US7834113B2 (en) * 2003-05-08 2010-11-16 E. I. Du Pont De Nemours And Company Photoresist compositions and processes for preparing the same
JP4825405B2 (ja) * 2003-05-08 2011-11-30 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フォトレジスト組成物およびそれらの調製方法
DE602004008468T2 (de) * 2003-06-26 2008-05-21 Jsr Corp. Photoresistzusammensetzungen
US7250475B2 (en) 2003-06-26 2007-07-31 Symyx Technologies, Inc. Synthesis of photoresist polymers
WO2005000924A1 (en) 2003-06-26 2005-01-06 Symyx Technologies, Inc. Photoresist polymers
JP2007526351A (ja) 2003-06-26 2007-09-13 シミックス・テクノロジーズ・インコーポレイテッド リビングフリーラジカルプロセスにより調製した、アクリル酸またはメタクリル酸ベースのポリマー樹脂を有するフォトレジストポリマーおよび組成物
US7408013B2 (en) * 2003-09-23 2008-08-05 Commonwealth Scientific And Industrial Research Organization Low-polydispersity photoimageable polymers and photoresists and processes for microlithography
KR101057850B1 (ko) 2004-04-08 2011-08-19 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 층간 절연막, 마이크로 렌즈 및이들의 제조 방법
WO2005108458A1 (ja) 2004-05-06 2005-11-17 Jsr Corporation 硬化性樹脂組成物、保護膜およびその形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010033296A (ko) * 1997-12-18 2001-04-25 커먼웰쓰 사이언티픽 앤 인더스트리알 리서치 오거니제이션 리빙 특성의 중합 방법 및 이 방법으로 제조된 중합체
KR20030011581A (ko) * 2001-07-24 2003-02-11 샌트랄 글래스 컴퍼니 리미티드 불소 함유 중합성 단량체 및 이를 이용한 고분자
WO2003075094A1 (en) 2002-03-01 2003-09-12 E.I. Du Pont De Nemours And Company Fluorinated copolymers for microlithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230055531A (ko) 2021-10-19 2023-04-26 인하대학교 산학협력단 연속 흐름 반응 공정을 이용한 자외선 리소그래피용 포토레지스트 고분자 및 이의 제조방법

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EP2287671A1 (en) 2011-02-23
TW200525292A (en) 2005-08-01
JP2007520587A (ja) 2007-07-26
KR20060119985A (ko) 2006-11-24
WO2005031461A1 (en) 2005-04-07
EP1664927A1 (en) 2006-06-07
US7696292B2 (en) 2010-04-13
EP1664927B1 (en) 2011-04-06
DE602004032151D1 (de) 2011-05-19
CN1853139A (zh) 2006-10-25
EP2287671B1 (en) 2012-06-06
US20050119378A1 (en) 2005-06-02

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