DE602004032151D1 - Fotoabbildbare acryl-polymere mit niedriger polydispersität, fotoresists und prozesse für die mikrolithographie - Google Patents
Fotoabbildbare acryl-polymere mit niedriger polydispersität, fotoresists und prozesse für die mikrolithographieInfo
- Publication number
- DE602004032151D1 DE602004032151D1 DE602004032151T DE602004032151T DE602004032151D1 DE 602004032151 D1 DE602004032151 D1 DE 602004032151D1 DE 602004032151 T DE602004032151 T DE 602004032151T DE 602004032151 T DE602004032151 T DE 602004032151T DE 602004032151 D1 DE602004032151 D1 DE 602004032151D1
- Authority
- DE
- Germany
- Prior art keywords
- photoable
- microlithography
- photoresists
- processes
- acrylic polymers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/38—Polymerisation using regulators, e.g. chain terminating agents, e.g. telomerisation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C35/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
- C07C35/22—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system
- C07C35/23—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings
- C07C35/28—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms
- C07C35/29—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms being a (2.2.1) system
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/22—Esters containing halogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50503803P | 2003-09-22 | 2003-09-22 | |
PCT/US2004/031242 WO2005031461A1 (en) | 2003-09-22 | 2004-09-22 | Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004032151D1 true DE602004032151D1 (de) | 2011-05-19 |
Family
ID=34392966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004032151T Active DE602004032151D1 (de) | 2003-09-22 | 2004-09-22 | Fotoabbildbare acryl-polymere mit niedriger polydispersität, fotoresists und prozesse für die mikrolithographie |
Country Status (8)
Country | Link |
---|---|
US (1) | US7696292B2 (de) |
EP (2) | EP2287671B1 (de) |
JP (1) | JP2007520587A (de) |
KR (1) | KR101238580B1 (de) |
CN (1) | CN1853139A (de) |
DE (1) | DE602004032151D1 (de) |
TW (1) | TW200525292A (de) |
WO (1) | WO2005031461A1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7713294B2 (en) * | 2002-08-28 | 2010-05-11 | Nomir Medical Technologies, Inc. | Near infrared microbial elimination laser systems (NIMEL) |
JP4705426B2 (ja) * | 2005-07-14 | 2011-06-22 | 互応化学工業株式会社 | プリント配線板製造用アルカリ現像型感光性レジストインキ組成物、その硬化物およびプリント配線板 |
JP4960614B2 (ja) * | 2005-08-12 | 2012-06-27 | セントラル硝子株式会社 | α−置換アクリル酸ノルボルナニル類及びその製造方法、並びにそれを用いた共重合体 |
JP4961707B2 (ja) * | 2005-09-29 | 2012-06-27 | Jsr株式会社 | 樹脂の合成法 |
JP4650630B2 (ja) * | 2005-10-07 | 2011-03-16 | Jsr株式会社 | スペーサー用感放射線性樹脂組成物、スペーサー、およびその形成方法 |
US8034534B2 (en) | 2006-08-14 | 2011-10-11 | E.I. Du Pont De Nemours And Company | Fluorinated polymers for use in immersion lithography |
KR101400824B1 (ko) * | 2006-09-25 | 2014-05-29 | 후지필름 가부시키가이샤 | 레지스트 조성물, 이 레지스트 조성물에 사용되는 수지, 이수지의 합성에 사용되는 화합물, 및 상기 레지스트조성물을 사용한 패턴형성방법 |
US8030419B2 (en) * | 2006-12-22 | 2011-10-04 | Maruzen Petrochemical Co., Ltd. | Process for producing polymer for semiconductor lithography |
US20080248418A1 (en) * | 2007-04-04 | 2008-10-09 | William Brown Farnham | Synthesis of fluoroalcohol-substituted (meth)acrylate esters and polymers derived therefrom |
JP5834630B2 (ja) * | 2011-02-04 | 2015-12-24 | 日立化成株式会社 | 樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
JP6031420B2 (ja) | 2012-08-31 | 2016-11-24 | ダウ グローバル テクノロジーズ エルエルシー | 光酸発生剤を含む末端基を含むポリマー、前記ポリマーを含むフォトレジストおよびデバイスの製造方法 |
JP5937549B2 (ja) | 2012-08-31 | 2016-06-22 | ダウ グローバル テクノロジーズ エルエルシー | 光酸発生剤化合物、光酸発生剤化合物を含有する末端基を含むポリマー、および製造方法 |
EP2970538B1 (de) | 2013-03-15 | 2021-10-20 | DuPont Electronics, Inc. | Schutzmittel für ein polymerisationsverfahren |
US20150185607A1 (en) * | 2013-12-31 | 2015-07-02 | Rohm And Haas Electronic Materials Llc | Photoresist overcoat compositions |
CN111918893A (zh) * | 2018-03-19 | 2020-11-10 | 株式会社大赛璐 | 光致抗蚀剂用树脂、光致抗蚀剂用树脂的制造方法、光致抗蚀剂用树脂组合物、以及图案形成方法 |
CN113861332B (zh) * | 2021-09-30 | 2023-02-24 | 宁波南大光电材料有限公司 | 一种光刻胶树脂及其聚合方法 |
KR20230055531A (ko) | 2021-10-19 | 2023-04-26 | 인하대학교 산학협력단 | 연속 흐름 반응 공정을 이용한 자외선 리소그래피용 포토레지스트 고분자 및 이의 제조방법 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0196204A (ja) * | 1987-10-08 | 1989-04-14 | Hitachi Chem Co Ltd | セメント用樹脂組成物 |
JP3000745B2 (ja) * | 1991-09-19 | 2000-01-17 | 富士通株式会社 | レジスト組成物とレジストパターンの形成方法 |
JPH0641245A (ja) * | 1992-07-24 | 1994-02-15 | Shin Etsu Chem Co Ltd | 単分散性共重合体及びその製造方法 |
US6200725B1 (en) * | 1995-06-28 | 2001-03-13 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
US7714075B1 (en) | 1996-07-10 | 2010-05-11 | Commonwealth Scientific And Industrial Research Organisation | Polymerization with living characteristics |
CA2213050A1 (en) | 1996-08-21 | 1998-02-21 | John S. Manka | Compositions containing thiocarbonates and acylated-nitrogen containing compounds |
DE69840423D1 (de) * | 1997-07-21 | 2009-02-12 | Commw Scient Ind Res Org | Synthese von dithioester-kettentransferagentien |
KR100589073B1 (ko) * | 1997-12-18 | 2006-06-13 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 리빙 특성의 중합 방법 및 이 방법으로 제조된 중합체 |
JP4131062B2 (ja) * | 1998-09-25 | 2008-08-13 | 信越化学工業株式会社 | 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
US6790587B1 (en) * | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
EP1177184B1 (de) | 1999-05-04 | 2004-08-25 | E.I. Du Pont De Nemours And Company | Polyfluorierte epoxide und assozierte polymere und verfahren |
JP3672780B2 (ja) * | 1999-11-29 | 2005-07-20 | セントラル硝子株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
FR2809829B1 (fr) | 2000-06-05 | 2002-07-26 | Rhodia Chimie Sa | Nouvelle composition photosensible pour la fabrication de photoresist |
US6441115B1 (en) * | 2000-06-30 | 2002-08-27 | Everlight Usa, Inc. | Photosensitive polymer |
JP4083399B2 (ja) * | 2001-07-24 | 2008-04-30 | セントラル硝子株式会社 | 含フッ素重合性単量体およびそれを用いた高分子化合物 |
CN1639640A (zh) | 2002-03-01 | 2005-07-13 | E·I·内穆尔杜邦公司 | 用于显微平版印刷的氟化共聚物 |
TW200403522A (en) * | 2002-03-01 | 2004-03-01 | Shipley Co Llc | Photoresist compositions |
KR100994818B1 (ko) | 2002-03-04 | 2010-11-16 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 단파장 이미지화용 네거티브 포토레지스트 |
TWI284783B (en) * | 2003-05-08 | 2007-08-01 | Du Pont | Photoresist compositions and processes for preparing the same |
US7834113B2 (en) * | 2003-05-08 | 2010-11-16 | E. I. Du Pont De Nemours And Company | Photoresist compositions and processes for preparing the same |
JP2007522262A (ja) | 2003-06-26 | 2007-08-09 | シミックス・テクノロジーズ・インコーポレイテッド | フォトレジストポリマー |
DE602004008468T2 (de) | 2003-06-26 | 2008-05-21 | Jsr Corp. | Photoresistzusammensetzungen |
WO2005003192A1 (en) | 2003-06-26 | 2005-01-13 | Symyx Technologies, Inc. | Synthesis of photoresist polymers |
WO2005000923A1 (en) | 2003-06-26 | 2005-01-06 | Symyx Technologies, Inc. | Photoresist polymers and compositions having acrylic- or methacrylic-based polymeric resin prepared by a living free radical process |
US7408013B2 (en) * | 2003-09-23 | 2008-08-05 | Commonwealth Scientific And Industrial Research Organization | Low-polydispersity photoimageable polymers and photoresists and processes for microlithography |
KR101057850B1 (ko) | 2004-04-08 | 2011-08-19 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 층간 절연막, 마이크로 렌즈 및이들의 제조 방법 |
WO2005108458A1 (ja) | 2004-05-06 | 2005-11-17 | Jsr Corporation | 硬化性樹脂組成物、保護膜およびその形成方法 |
-
2004
- 2004-09-16 US US10/943,063 patent/US7696292B2/en active Active
- 2004-09-22 DE DE602004032151T patent/DE602004032151D1/de active Active
- 2004-09-22 EP EP10010041A patent/EP2287671B1/de active Active
- 2004-09-22 CN CNA2004800271370A patent/CN1853139A/zh active Pending
- 2004-09-22 JP JP2006528161A patent/JP2007520587A/ja active Pending
- 2004-09-22 TW TW093128730A patent/TW200525292A/zh unknown
- 2004-09-22 KR KR1020067005581A patent/KR101238580B1/ko active IP Right Grant
- 2004-09-22 WO PCT/US2004/031242 patent/WO2005031461A1/en active Application Filing
- 2004-09-22 EP EP04784900A patent/EP1664927B1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7696292B2 (en) | 2010-04-13 |
EP1664927A1 (de) | 2006-06-07 |
US20050119378A1 (en) | 2005-06-02 |
JP2007520587A (ja) | 2007-07-26 |
KR20060119985A (ko) | 2006-11-24 |
WO2005031461A1 (en) | 2005-04-07 |
EP1664927B1 (de) | 2011-04-06 |
EP2287671A1 (de) | 2011-02-23 |
TW200525292A (en) | 2005-08-01 |
CN1853139A (zh) | 2006-10-25 |
EP2287671B1 (de) | 2012-06-06 |
KR101238580B1 (ko) | 2013-02-28 |
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