TW200525292A - Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography - Google Patents

Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography Download PDF

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Publication number
TW200525292A
TW200525292A TW093128730A TW93128730A TW200525292A TW 200525292 A TW200525292 A TW 200525292A TW 093128730 A TW093128730 A TW 093128730A TW 93128730 A TW93128730 A TW 93128730A TW 200525292 A TW200525292 A TW 200525292A
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TW
Taiwan
Prior art keywords
group
alkyl
acrylate
substituted
polymer
Prior art date
Application number
TW093128730A
Other languages
English (en)
Chinese (zh)
Inventor
William Brown Farnham
Michael Fryd
Frank Leonard Schadt Iii
Original Assignee
Du Pont
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Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW200525292A publication Critical patent/TW200525292A/zh

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/38Polymerisation using regulators, e.g. chain terminating agents, e.g. telomerisation
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C35/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C35/22Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system
    • C07C35/23Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings
    • C07C35/28Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms
    • C07C35/29Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms being a (2.2.1) system
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10Esters
    • C08F20/22Esters containing halogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/108Polyolefin or halogen containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
TW093128730A 2003-09-22 2004-09-22 Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography TW200525292A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50503803P 2003-09-22 2003-09-22

Publications (1)

Publication Number Publication Date
TW200525292A true TW200525292A (en) 2005-08-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128730A TW200525292A (en) 2003-09-22 2004-09-22 Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography

Country Status (8)

Country Link
US (1) US7696292B2 (enExample)
EP (2) EP2287671B1 (enExample)
JP (1) JP2007520587A (enExample)
KR (1) KR101238580B1 (enExample)
CN (1) CN1853139A (enExample)
DE (1) DE602004032151D1 (enExample)
TW (1) TW200525292A (enExample)
WO (1) WO2005031461A1 (enExample)

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US7713294B2 (en) * 2002-08-28 2010-05-11 Nomir Medical Technologies, Inc. Near infrared microbial elimination laser systems (NIMEL)
JP4705426B2 (ja) * 2005-07-14 2011-06-22 互応化学工業株式会社 プリント配線板製造用アルカリ現像型感光性レジストインキ組成物、その硬化物およびプリント配線板
JP4960614B2 (ja) * 2005-08-12 2012-06-27 セントラル硝子株式会社 α−置換アクリル酸ノルボルナニル類及びその製造方法、並びにそれを用いた共重合体
JP4961707B2 (ja) * 2005-09-29 2012-06-27 Jsr株式会社 樹脂の合成法
JP4650630B2 (ja) * 2005-10-07 2011-03-16 Jsr株式会社 スペーサー用感放射線性樹脂組成物、スペーサー、およびその形成方法
WO2008021291A2 (en) * 2006-08-14 2008-02-21 E. I. Du Pont De Nemours And Company Fluorinated polymers for use in immersion lithography
KR101400824B1 (ko) 2006-09-25 2014-05-29 후지필름 가부시키가이샤 레지스트 조성물, 이 레지스트 조성물에 사용되는 수지, 이수지의 합성에 사용되는 화합물, 및 상기 레지스트조성물을 사용한 패턴형성방법
KR101446819B1 (ko) * 2006-12-22 2014-10-01 마루젠 세끼유가가꾸 가부시키가이샤 반도체 리소그래피용 중합체의 제조 방법
US20080248418A1 (en) * 2007-04-04 2008-10-09 William Brown Farnham Synthesis of fluoroalcohol-substituted (meth)acrylate esters and polymers derived therefrom
JP5834630B2 (ja) * 2011-02-04 2015-12-24 日立化成株式会社 樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP6031420B2 (ja) 2012-08-31 2016-11-24 ダウ グローバル テクノロジーズ エルエルシー 光酸発生剤を含む末端基を含むポリマー、前記ポリマーを含むフォトレジストおよびデバイスの製造方法
JP5937549B2 (ja) * 2012-08-31 2016-06-22 ダウ グローバル テクノロジーズ エルエルシー 光酸発生剤化合物、光酸発生剤化合物を含有する末端基を含むポリマー、および製造方法
EP2970538B1 (en) 2013-03-15 2021-10-20 DuPont Electronics, Inc. Polymerization process protection means
KR20150080443A (ko) * 2013-12-31 2015-07-09 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 오버코트 조성물
US20210040253A1 (en) * 2018-03-19 2021-02-11 Daicel Corporation Photoresist resin, production method for photoresist resin, photoresist resin composition, and pattern formation method
JP7310471B2 (ja) * 2019-09-12 2023-07-19 Jsr株式会社 パターン形成方法及び組成物
CN113861332B (zh) * 2021-09-30 2023-02-24 宁波南大光电材料有限公司 一种光刻胶树脂及其聚合方法
KR102723279B1 (ko) 2021-10-19 2024-10-28 인하대학교 산학협력단 연속 흐름 반응 공정을 이용한 자외선 리소그래피용 포토레지스트 고분자 및 이의 제조방법

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Also Published As

Publication number Publication date
EP2287671A1 (en) 2011-02-23
JP2007520587A (ja) 2007-07-26
KR20060119985A (ko) 2006-11-24
WO2005031461A1 (en) 2005-04-07
EP1664927A1 (en) 2006-06-07
US7696292B2 (en) 2010-04-13
EP1664927B1 (en) 2011-04-06
DE602004032151D1 (de) 2011-05-19
CN1853139A (zh) 2006-10-25
EP2287671B1 (en) 2012-06-06
US20050119378A1 (en) 2005-06-02
KR101238580B1 (ko) 2013-02-28

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