JP2007520587A - 低多分散性の光画像形成可能なアクリルポリマー、フォトレジストおよびマイクロリソグラフィーのための方法 - Google Patents

低多分散性の光画像形成可能なアクリルポリマー、フォトレジストおよびマイクロリソグラフィーのための方法 Download PDF

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Publication number
JP2007520587A
JP2007520587A JP2006528161A JP2006528161A JP2007520587A JP 2007520587 A JP2007520587 A JP 2007520587A JP 2006528161 A JP2006528161 A JP 2006528161A JP 2006528161 A JP2006528161 A JP 2006528161A JP 2007520587 A JP2007520587 A JP 2007520587A
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JP
Japan
Prior art keywords
group
alkyl
acrylate
meth
substituted
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Pending
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Japanese (ja)
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JP2007520587A5 (enExample
Inventor
ブラウン ファーナム ウィリアム
フライド マイケル
フランク レオナルド シャット ザ サード
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EIDP Inc
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EI Du Pont de Nemours and Co
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Publication of JP2007520587A publication Critical patent/JP2007520587A/ja
Publication of JP2007520587A5 publication Critical patent/JP2007520587A5/ja
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/38Polymerisation using regulators, e.g. chain terminating agents, e.g. telomerisation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C35/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C35/22Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system
    • C07C35/23Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings
    • C07C35/28Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms
    • C07C35/29Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms being a (2.2.1) system
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10Esters
    • C08F20/22Esters containing halogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/108Polyolefin or halogen containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
JP2006528161A 2003-09-22 2004-09-22 低多分散性の光画像形成可能なアクリルポリマー、フォトレジストおよびマイクロリソグラフィーのための方法 Pending JP2007520587A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50503803P 2003-09-22 2003-09-22
PCT/US2004/031242 WO2005031461A1 (en) 2003-09-22 2004-09-22 Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography

Publications (2)

Publication Number Publication Date
JP2007520587A true JP2007520587A (ja) 2007-07-26
JP2007520587A5 JP2007520587A5 (enExample) 2007-09-27

Family

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JP2006528161A Pending JP2007520587A (ja) 2003-09-22 2004-09-22 低多分散性の光画像形成可能なアクリルポリマー、フォトレジストおよびマイクロリソグラフィーのための方法

Country Status (8)

Country Link
US (1) US7696292B2 (enExample)
EP (2) EP2287671B1 (enExample)
JP (1) JP2007520587A (enExample)
KR (1) KR101238580B1 (enExample)
CN (1) CN1853139A (enExample)
DE (1) DE602004032151D1 (enExample)
TW (1) TW200525292A (enExample)
WO (1) WO2005031461A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007091882A (ja) * 2005-09-29 2007-04-12 Jsr Corp 樹脂の合成法
JP2015135492A (ja) * 2013-12-31 2015-07-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC フォトレジストオーバーコート組成物
JP2016026313A (ja) * 2011-02-04 2016-02-12 日立化成株式会社 樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
WO2019181228A1 (ja) * 2018-03-19 2019-09-26 株式会社ダイセル フォトレジスト用樹脂、フォトレジスト用樹脂の製造方法、フォトレジスト用樹脂組成物、及びパターン形成方法

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US7713294B2 (en) * 2002-08-28 2010-05-11 Nomir Medical Technologies, Inc. Near infrared microbial elimination laser systems (NIMEL)
JP4705426B2 (ja) * 2005-07-14 2011-06-22 互応化学工業株式会社 プリント配線板製造用アルカリ現像型感光性レジストインキ組成物、その硬化物およびプリント配線板
JP4960614B2 (ja) * 2005-08-12 2012-06-27 セントラル硝子株式会社 α−置換アクリル酸ノルボルナニル類及びその製造方法、並びにそれを用いた共重合体
JP4650630B2 (ja) * 2005-10-07 2011-03-16 Jsr株式会社 スペーサー用感放射線性樹脂組成物、スペーサー、およびその形成方法
WO2008021291A2 (en) * 2006-08-14 2008-02-21 E. I. Du Pont De Nemours And Company Fluorinated polymers for use in immersion lithography
KR101400824B1 (ko) 2006-09-25 2014-05-29 후지필름 가부시키가이샤 레지스트 조성물, 이 레지스트 조성물에 사용되는 수지, 이수지의 합성에 사용되는 화합물, 및 상기 레지스트조성물을 사용한 패턴형성방법
KR101446819B1 (ko) * 2006-12-22 2014-10-01 마루젠 세끼유가가꾸 가부시키가이샤 반도체 리소그래피용 중합체의 제조 방법
US20080248418A1 (en) * 2007-04-04 2008-10-09 William Brown Farnham Synthesis of fluoroalcohol-substituted (meth)acrylate esters and polymers derived therefrom
JP6031420B2 (ja) 2012-08-31 2016-11-24 ダウ グローバル テクノロジーズ エルエルシー 光酸発生剤を含む末端基を含むポリマー、前記ポリマーを含むフォトレジストおよびデバイスの製造方法
JP5937549B2 (ja) * 2012-08-31 2016-06-22 ダウ グローバル テクノロジーズ エルエルシー 光酸発生剤化合物、光酸発生剤化合物を含有する末端基を含むポリマー、および製造方法
EP2970538B1 (en) 2013-03-15 2021-10-20 DuPont Electronics, Inc. Polymerization process protection means
JP7310471B2 (ja) * 2019-09-12 2023-07-19 Jsr株式会社 パターン形成方法及び組成物
CN113861332B (zh) * 2021-09-30 2023-02-24 宁波南大光电材料有限公司 一种光刻胶树脂及其聚合方法
KR102723279B1 (ko) 2021-10-19 2024-10-28 인하대학교 산학협력단 연속 흐름 반응 공정을 이용한 자외선 리소그래피용 포토레지스트 고분자 및 이의 제조방법

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JPH0641245A (ja) * 1992-07-24 1994-02-15 Shin Etsu Chem Co Ltd 単分散性共重合体及びその製造方法
JP2000515181A (ja) * 1996-07-10 2000-11-14 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー リビング特性を持つ重合
JP2001154362A (ja) * 1999-11-29 2001-06-08 Central Glass Co Ltd ポジ型レジスト組成物およびパターン形成方法
JP2002508409A (ja) * 1997-12-18 2002-03-19 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー リビング性を有する重合方法およびその方法で製造されるポリマー
JP2003040840A (ja) * 2001-07-24 2003-02-13 Central Glass Co Ltd 含フッ素重合性単量体およびそれを用いた高分子化合物
JP2004038141A (ja) * 2002-03-01 2004-02-05 Shipley Co Llc フォトレジスト組成物

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JP2000515181A (ja) * 1996-07-10 2000-11-14 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー リビング特性を持つ重合
JP2002508409A (ja) * 1997-12-18 2002-03-19 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー リビング性を有する重合方法およびその方法で製造されるポリマー
JP2001154362A (ja) * 1999-11-29 2001-06-08 Central Glass Co Ltd ポジ型レジスト組成物およびパターン形成方法
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JP2004038141A (ja) * 2002-03-01 2004-02-05 Shipley Co Llc フォトレジスト組成物

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007091882A (ja) * 2005-09-29 2007-04-12 Jsr Corp 樹脂の合成法
JP2016026313A (ja) * 2011-02-04 2016-02-12 日立化成株式会社 樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2015135492A (ja) * 2013-12-31 2015-07-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC フォトレジストオーバーコート組成物
WO2019181228A1 (ja) * 2018-03-19 2019-09-26 株式会社ダイセル フォトレジスト用樹脂、フォトレジスト用樹脂の製造方法、フォトレジスト用樹脂組成物、及びパターン形成方法

Also Published As

Publication number Publication date
EP2287671A1 (en) 2011-02-23
TW200525292A (en) 2005-08-01
KR20060119985A (ko) 2006-11-24
WO2005031461A1 (en) 2005-04-07
EP1664927A1 (en) 2006-06-07
US7696292B2 (en) 2010-04-13
EP1664927B1 (en) 2011-04-06
DE602004032151D1 (de) 2011-05-19
CN1853139A (zh) 2006-10-25
EP2287671B1 (en) 2012-06-06
US20050119378A1 (en) 2005-06-02
KR101238580B1 (ko) 2013-02-28

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