CN1853139A - 低多分散性可光成像的丙烯酸类聚合物、光致抗蚀剂和微平版印刷法 - Google Patents

低多分散性可光成像的丙烯酸类聚合物、光致抗蚀剂和微平版印刷法 Download PDF

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Publication number
CN1853139A
CN1853139A CNA2004800271370A CN200480027137A CN1853139A CN 1853139 A CN1853139 A CN 1853139A CN A2004800271370 A CNA2004800271370 A CN A2004800271370A CN 200480027137 A CN200480027137 A CN 200480027137A CN 1853139 A CN1853139 A CN 1853139A
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CN
China
Prior art keywords
alkyl
meth
group
acrylate
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004800271370A
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English (en)
Chinese (zh)
Inventor
W·B·法纳姆
M·菲德
F·L·查特三世
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commonwealth Scientific and Industrial Research Organization CSIRO
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EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN1853139A publication Critical patent/CN1853139A/zh
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/38Polymerisation using regulators, e.g. chain terminating agents, e.g. telomerisation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C35/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C35/22Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system
    • C07C35/23Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings
    • C07C35/28Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms
    • C07C35/29Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with hydroxy on a condensed ring system having two rings the condensed ring system containing seven carbon atoms being a (2.2.1) system
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10Esters
    • C08F20/22Esters containing halogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/108Polyolefin or halogen containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
CNA2004800271370A 2003-09-22 2004-09-22 低多分散性可光成像的丙烯酸类聚合物、光致抗蚀剂和微平版印刷法 Pending CN1853139A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50503803P 2003-09-22 2003-09-22
US60/505,038 2003-09-22

Publications (1)

Publication Number Publication Date
CN1853139A true CN1853139A (zh) 2006-10-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004800271370A Pending CN1853139A (zh) 2003-09-22 2004-09-22 低多分散性可光成像的丙烯酸类聚合物、光致抗蚀剂和微平版印刷法

Country Status (8)

Country Link
US (1) US7696292B2 (enExample)
EP (2) EP2287671B1 (enExample)
JP (1) JP2007520587A (enExample)
KR (1) KR101238580B1 (enExample)
CN (1) CN1853139A (enExample)
DE (1) DE602004032151D1 (enExample)
TW (1) TW200525292A (enExample)
WO (1) WO2005031461A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103664722A (zh) * 2012-08-31 2014-03-26 陶氏环球技术有限公司 光致生酸化合物,聚合物及其制备方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7713294B2 (en) * 2002-08-28 2010-05-11 Nomir Medical Technologies, Inc. Near infrared microbial elimination laser systems (NIMEL)
JP4705426B2 (ja) * 2005-07-14 2011-06-22 互応化学工業株式会社 プリント配線板製造用アルカリ現像型感光性レジストインキ組成物、その硬化物およびプリント配線板
JP4960614B2 (ja) * 2005-08-12 2012-06-27 セントラル硝子株式会社 α−置換アクリル酸ノルボルナニル類及びその製造方法、並びにそれを用いた共重合体
JP4961707B2 (ja) * 2005-09-29 2012-06-27 Jsr株式会社 樹脂の合成法
JP4650630B2 (ja) * 2005-10-07 2011-03-16 Jsr株式会社 スペーサー用感放射線性樹脂組成物、スペーサー、およびその形成方法
WO2008021291A2 (en) * 2006-08-14 2008-02-21 E. I. Du Pont De Nemours And Company Fluorinated polymers for use in immersion lithography
KR101400824B1 (ko) 2006-09-25 2014-05-29 후지필름 가부시키가이샤 레지스트 조성물, 이 레지스트 조성물에 사용되는 수지, 이수지의 합성에 사용되는 화합물, 및 상기 레지스트조성물을 사용한 패턴형성방법
KR101446819B1 (ko) * 2006-12-22 2014-10-01 마루젠 세끼유가가꾸 가부시키가이샤 반도체 리소그래피용 중합체의 제조 방법
US20080248418A1 (en) * 2007-04-04 2008-10-09 William Brown Farnham Synthesis of fluoroalcohol-substituted (meth)acrylate esters and polymers derived therefrom
JP5834630B2 (ja) * 2011-02-04 2015-12-24 日立化成株式会社 樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP6031420B2 (ja) 2012-08-31 2016-11-24 ダウ グローバル テクノロジーズ エルエルシー 光酸発生剤を含む末端基を含むポリマー、前記ポリマーを含むフォトレジストおよびデバイスの製造方法
EP2970538B1 (en) 2013-03-15 2021-10-20 DuPont Electronics, Inc. Polymerization process protection means
KR20150080443A (ko) * 2013-12-31 2015-07-09 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 오버코트 조성물
US20210040253A1 (en) * 2018-03-19 2021-02-11 Daicel Corporation Photoresist resin, production method for photoresist resin, photoresist resin composition, and pattern formation method
JP7310471B2 (ja) * 2019-09-12 2023-07-19 Jsr株式会社 パターン形成方法及び組成物
CN113861332B (zh) * 2021-09-30 2023-02-24 宁波南大光电材料有限公司 一种光刻胶树脂及其聚合方法
KR102723279B1 (ko) 2021-10-19 2024-10-28 인하대학교 산학협력단 연속 흐름 반응 공정을 이용한 자외선 리소그래피용 포토레지스트 고분자 및 이의 제조방법

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196204A (ja) * 1987-10-08 1989-04-14 Hitachi Chem Co Ltd セメント用樹脂組成物
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JPH0641245A (ja) * 1992-07-24 1994-02-15 Shin Etsu Chem Co Ltd 単分散性共重合体及びその製造方法
US6200725B1 (en) * 1995-06-28 2001-03-13 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
WO1998001478A1 (en) 1996-07-10 1998-01-15 E.I. Du Pont De Nemours And Company Polymerization with living characteristics
CA2213050A1 (en) 1996-08-21 1998-02-21 John S. Manka Compositions containing thiocarbonates and acylated-nitrogen containing compounds
IL139666A0 (en) * 1997-07-21 2002-02-10 Commw Scient Ind Res Org Synthesis of dithioester chain transfer agents and use of bis (thioacyl) disulfides or dithioesters as chain transfer agents
CA2309279C (en) 1997-12-18 2009-07-14 E.I. Du Pont De Nemours And Company Polymerization process with living characteristics and polymers made therefrom
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
HK1048309A1 (zh) 1999-05-04 2003-03-28 纳幕尔杜邦公司 多氟化环氧化物和有关聚合物以及制备方法
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP3672780B2 (ja) * 1999-11-29 2005-07-20 セントラル硝子株式会社 ポジ型レジスト組成物およびパターン形成方法
FR2809829B1 (fr) 2000-06-05 2002-07-26 Rhodia Chimie Sa Nouvelle composition photosensible pour la fabrication de photoresist
US6441115B1 (en) * 2000-06-30 2002-08-27 Everlight Usa, Inc. Photosensitive polymer
JP4083399B2 (ja) * 2001-07-24 2008-04-30 セントラル硝子株式会社 含フッ素重合性単量体およびそれを用いた高分子化合物
TW200403522A (en) * 2002-03-01 2004-03-01 Shipley Co Llc Photoresist compositions
WO2003075094A1 (en) 2002-03-01 2003-09-12 E.I. Du Pont De Nemours And Company Fluorinated copolymers for microlithography
TWI314247B (en) 2002-03-04 2009-09-01 Shipley Co Llc Megative photordsists for short wavelength imaging
US7834113B2 (en) * 2003-05-08 2010-11-16 E. I. Du Pont De Nemours And Company Photoresist compositions and processes for preparing the same
JP4825405B2 (ja) * 2003-05-08 2011-11-30 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フォトレジスト組成物およびそれらの調製方法
DE602004008468T2 (de) * 2003-06-26 2008-05-21 Jsr Corp. Photoresistzusammensetzungen
US7250475B2 (en) 2003-06-26 2007-07-31 Symyx Technologies, Inc. Synthesis of photoresist polymers
WO2005000924A1 (en) 2003-06-26 2005-01-06 Symyx Technologies, Inc. Photoresist polymers
JP2007526351A (ja) 2003-06-26 2007-09-13 シミックス・テクノロジーズ・インコーポレイテッド リビングフリーラジカルプロセスにより調製した、アクリル酸またはメタクリル酸ベースのポリマー樹脂を有するフォトレジストポリマーおよび組成物
US7408013B2 (en) * 2003-09-23 2008-08-05 Commonwealth Scientific And Industrial Research Organization Low-polydispersity photoimageable polymers and photoresists and processes for microlithography
KR101057850B1 (ko) 2004-04-08 2011-08-19 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 층간 절연막, 마이크로 렌즈 및이들의 제조 방법
WO2005108458A1 (ja) 2004-05-06 2005-11-17 Jsr Corporation 硬化性樹脂組成物、保護膜およびその形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103664722A (zh) * 2012-08-31 2014-03-26 陶氏环球技术有限公司 光致生酸化合物,聚合物及其制备方法
CN103664722B (zh) * 2012-08-31 2016-02-10 陶氏环球技术有限公司 光致生酸化合物,聚合物及其制备方法

Also Published As

Publication number Publication date
EP2287671A1 (en) 2011-02-23
TW200525292A (en) 2005-08-01
JP2007520587A (ja) 2007-07-26
KR20060119985A (ko) 2006-11-24
WO2005031461A1 (en) 2005-04-07
EP1664927A1 (en) 2006-06-07
US7696292B2 (en) 2010-04-13
EP1664927B1 (en) 2011-04-06
DE602004032151D1 (de) 2011-05-19
EP2287671B1 (en) 2012-06-06
US20050119378A1 (en) 2005-06-02
KR101238580B1 (ko) 2013-02-28

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