KR101227925B1 - 다이아몬드 층을 갖는 갈륨 질화물 장치 제조 - Google Patents

다이아몬드 층을 갖는 갈륨 질화물 장치 제조 Download PDF

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KR101227925B1
KR101227925B1 KR1020117015678A KR20117015678A KR101227925B1 KR 101227925 B1 KR101227925 B1 KR 101227925B1 KR 1020117015678 A KR1020117015678 A KR 1020117015678A KR 20117015678 A KR20117015678 A KR 20117015678A KR 101227925 B1 KR101227925 B1 KR 101227925B1
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gallium nitride
layer
diamond layer
diamond
depositing
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KR20110099721A (ko
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랄프 코렌스테인
스티븐 디. 베른스테인
스테판 제이. 페레이라
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레이티언 캄파니
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020117015678A 2008-12-22 2009-12-16 다이아몬드 층을 갖는 갈륨 질화물 장치 제조 Active KR101227925B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/341,115 2008-12-22
US12/341,115 US7989261B2 (en) 2008-12-22 2008-12-22 Fabricating a gallium nitride device with a diamond layer
PCT/US2009/068180 WO2010075125A1 (en) 2008-12-22 2009-12-16 Fabricating a gallium nitride device with a diamond layer

Publications (2)

Publication Number Publication Date
KR20110099721A KR20110099721A (ko) 2011-09-08
KR101227925B1 true KR101227925B1 (ko) 2013-01-30

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KR1020117015678A Active KR101227925B1 (ko) 2008-12-22 2009-12-16 다이아몬드 층을 갖는 갈륨 질화물 장치 제조

Country Status (5)

Country Link
US (2) US7989261B2 (enExample)
JP (1) JP5486610B2 (enExample)
KR (1) KR101227925B1 (enExample)
TW (1) TWI488991B (enExample)
WO (1) WO2010075125A1 (enExample)

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US7989261B2 (en) 2008-12-22 2011-08-02 Raytheon Company Fabricating a gallium nitride device with a diamond layer
US7888171B2 (en) * 2008-12-22 2011-02-15 Raytheon Company Fabricating a gallium nitride layer with diamond layers
US7892881B2 (en) * 2009-02-23 2011-02-22 Raytheon Company Fabricating a device with a diamond layer
GB201121666D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Synthetic diamond coated compound semiconductor substrates
GB201121655D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Substrates for semiconductor devices
US8575657B2 (en) 2012-03-20 2013-11-05 Northrop Grumman Systems Corporation Direct growth of diamond in backside vias for GaN HEMT devices
US9331163B2 (en) * 2013-08-30 2016-05-03 The United States Of America, As Represented By The Secretary Of The Navy Transistor with diamond gate
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US10695872B2 (en) * 2015-03-11 2020-06-30 Lockheed Martin Corporation Heat spreaders fabricated from metal nanoparticles
JP6759885B2 (ja) * 2016-09-06 2020-09-23 富士通株式会社 半導体装置及び半導体装置の製造方法
US9780181B1 (en) 2016-12-07 2017-10-03 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multi-function P-type diamond gate
US10332820B2 (en) 2017-03-20 2019-06-25 Akash Systems, Inc. Satellite communication transmitter with improved thermal management
US10374553B2 (en) * 2017-06-15 2019-08-06 Akash Systems, Inc. Microwave transmitter with improved information throughput
US10128107B1 (en) * 2017-08-31 2018-11-13 Rfhic Corporation Wafers having III-Nitride and diamond layers
CN107731903A (zh) * 2017-09-14 2018-02-23 西安电子科技大学 基于SOI结构金刚石复合衬底的GaN高电子迁移率器件及制备方法
CN108847392B (zh) * 2018-06-26 2019-12-03 苏州汉骅半导体有限公司 金刚石基氮化镓器件制造方法
KR102602505B1 (ko) * 2018-09-19 2023-11-14 아카시 시스템즈, 인크. 위성 통신을 위한 시스템들 및 방법들
US12176221B2 (en) 2019-05-31 2024-12-24 Texas State University Incorporating semiconductors on a polycrystalline diamond substrate
CN110211880B (zh) * 2019-07-05 2023-04-28 苏州汉骅半导体有限公司 金刚石基氮化镓hemt结构制造方法
US11652146B2 (en) 2020-02-07 2023-05-16 Rfhic Corporation Method of forming a semiconductor wafer containing a gallium-nitride layer and two diamond layers
CN112466943A (zh) * 2020-12-01 2021-03-09 西安电子科技大学 基于p型掺杂金刚石散热层的GaN HEMT及制备方法
EP4125113A1 (en) * 2021-07-30 2023-02-01 Imec VZW Method for fabricating a gan based electronic device
JP2024142364A (ja) * 2023-03-30 2024-10-11 国立研究開発法人産業技術総合研究所 窒化ガリウムとダイヤモンドを備える複合体とその製造方法
CN117646275A (zh) * 2024-01-30 2024-03-05 北京大学 一种大尺寸高热导率iii族氮化物外延材料的制备方法

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Also Published As

Publication number Publication date
US8174024B2 (en) 2012-05-08
US20100155900A1 (en) 2010-06-24
KR20110099721A (ko) 2011-09-08
TWI488991B (zh) 2015-06-21
US20110241018A1 (en) 2011-10-06
WO2010075125A1 (en) 2010-07-01
JP2012513675A (ja) 2012-06-14
TW201035362A (en) 2010-10-01
US7989261B2 (en) 2011-08-02
JP5486610B2 (ja) 2014-05-07

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