TWI488991B - 製造具有鑽石層之氮化鎵裝置 - Google Patents

製造具有鑽石層之氮化鎵裝置 Download PDF

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Publication number
TWI488991B
TWI488991B TW098143373A TW98143373A TWI488991B TW I488991 B TWI488991 B TW I488991B TW 098143373 A TW098143373 A TW 098143373A TW 98143373 A TW98143373 A TW 98143373A TW I488991 B TWI488991 B TW I488991B
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TW
Taiwan
Prior art keywords
layer
gan
diamond
diamond layer
depositing
Prior art date
Application number
TW098143373A
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English (en)
Chinese (zh)
Other versions
TW201035362A (en
Inventor
Ralph Korenstein
Steven D Bernstein
Stephen J Pereira
Original Assignee
Raytheon Co
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Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of TW201035362A publication Critical patent/TW201035362A/zh
Application granted granted Critical
Publication of TWI488991B publication Critical patent/TWI488991B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
TW098143373A 2008-12-22 2009-12-17 製造具有鑽石層之氮化鎵裝置 TWI488991B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/341,115 US7989261B2 (en) 2008-12-22 2008-12-22 Fabricating a gallium nitride device with a diamond layer

Publications (2)

Publication Number Publication Date
TW201035362A TW201035362A (en) 2010-10-01
TWI488991B true TWI488991B (zh) 2015-06-21

Family

ID=41697881

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098143373A TWI488991B (zh) 2008-12-22 2009-12-17 製造具有鑽石層之氮化鎵裝置

Country Status (5)

Country Link
US (2) US7989261B2 (enExample)
JP (1) JP5486610B2 (enExample)
KR (1) KR101227925B1 (enExample)
TW (1) TWI488991B (enExample)
WO (1) WO2010075125A1 (enExample)

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US7989261B2 (en) 2008-12-22 2011-08-02 Raytheon Company Fabricating a gallium nitride device with a diamond layer
US7888171B2 (en) * 2008-12-22 2011-02-15 Raytheon Company Fabricating a gallium nitride layer with diamond layers
US7892881B2 (en) * 2009-02-23 2011-02-22 Raytheon Company Fabricating a device with a diamond layer
GB201121666D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Synthetic diamond coated compound semiconductor substrates
GB201121655D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Substrates for semiconductor devices
US8575657B2 (en) 2012-03-20 2013-11-05 Northrop Grumman Systems Corporation Direct growth of diamond in backside vias for GaN HEMT devices
US9331163B2 (en) * 2013-08-30 2016-05-03 The United States Of America, As Represented By The Secretary Of The Navy Transistor with diamond gate
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US10695872B2 (en) * 2015-03-11 2020-06-30 Lockheed Martin Corporation Heat spreaders fabricated from metal nanoparticles
JP6759885B2 (ja) * 2016-09-06 2020-09-23 富士通株式会社 半導体装置及び半導体装置の製造方法
US9780181B1 (en) 2016-12-07 2017-10-03 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multi-function P-type diamond gate
US10332820B2 (en) 2017-03-20 2019-06-25 Akash Systems, Inc. Satellite communication transmitter with improved thermal management
US10374553B2 (en) * 2017-06-15 2019-08-06 Akash Systems, Inc. Microwave transmitter with improved information throughput
US10128107B1 (en) * 2017-08-31 2018-11-13 Rfhic Corporation Wafers having III-Nitride and diamond layers
CN107731903A (zh) * 2017-09-14 2018-02-23 西安电子科技大学 基于SOI结构金刚石复合衬底的GaN高电子迁移率器件及制备方法
CN108847392B (zh) * 2018-06-26 2019-12-03 苏州汉骅半导体有限公司 金刚石基氮化镓器件制造方法
JP7314257B2 (ja) * 2018-09-19 2023-07-25 アカーシュ・システムズ・インコーポレイテッド 衛星通信のためのシステム及び方法
WO2020242494A1 (en) 2019-05-31 2020-12-03 Texas State University Incorporating semiconductors on a polycrystalline diamond substrate
CN110211880B (zh) * 2019-07-05 2023-04-28 苏州汉骅半导体有限公司 金刚石基氮化镓hemt结构制造方法
US11652146B2 (en) 2020-02-07 2023-05-16 Rfhic Corporation Method of forming a semiconductor wafer containing a gallium-nitride layer and two diamond layers
CN112466943A (zh) * 2020-12-01 2021-03-09 西安电子科技大学 基于p型掺杂金刚石散热层的GaN HEMT及制备方法
EP4125113A1 (en) * 2021-07-30 2023-02-01 Imec VZW Method for fabricating a gan based electronic device
JP2024142364A (ja) * 2023-03-30 2024-10-11 国立研究開発法人産業技術総合研究所 窒化ガリウムとダイヤモンドを備える複合体とその製造方法
CN117646275A (zh) * 2024-01-30 2024-03-05 北京大学 一种大尺寸高热导率iii族氮化物外延材料的制备方法

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Also Published As

Publication number Publication date
US20100155900A1 (en) 2010-06-24
JP5486610B2 (ja) 2014-05-07
JP2012513675A (ja) 2012-06-14
US7989261B2 (en) 2011-08-02
KR101227925B1 (ko) 2013-01-30
TW201035362A (en) 2010-10-01
US20110241018A1 (en) 2011-10-06
WO2010075125A1 (en) 2010-07-01
US8174024B2 (en) 2012-05-08
KR20110099721A (ko) 2011-09-08

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