KR101194452B1 - 광전자 기기 상의 마이크로 광학 기기 - Google Patents

광전자 기기 상의 마이크로 광학 기기 Download PDF

Info

Publication number
KR101194452B1
KR101194452B1 KR1020067019870A KR20067019870A KR101194452B1 KR 101194452 B1 KR101194452 B1 KR 101194452B1 KR 1020067019870 A KR1020067019870 A KR 1020067019870A KR 20067019870 A KR20067019870 A KR 20067019870A KR 101194452 B1 KR101194452 B1 KR 101194452B1
Authority
KR
South Korea
Prior art keywords
optical
layer
transparent material
wafer
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020067019870A
Other languages
English (en)
Korean (ko)
Other versions
KR20070004774A (ko
Inventor
하르트무트 루트만
마르쿠스 로씨
Original Assignee
헵타곤 마이크로 옵틱스 피티이. 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 헵타곤 마이크로 옵틱스 피티이. 리미티드 filed Critical 헵타곤 마이크로 옵틱스 피티이. 리미티드
Publication of KR20070004774A publication Critical patent/KR20070004774A/ko
Application granted granted Critical
Publication of KR101194452B1 publication Critical patent/KR101194452B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026Wafer-level processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Optical Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Hybrid Cells (AREA)
  • Optical Measuring Cells (AREA)
KR1020067019870A 2004-02-27 2005-02-25 광전자 기기 상의 마이크로 광학 기기 Expired - Lifetime KR101194452B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04405110.0 2004-02-27
EP04405110A EP1569276A1 (en) 2004-02-27 2004-02-27 Micro-optics on optoelectronics
PCT/CH2005/000109 WO2005083789A2 (en) 2004-02-27 2005-02-25 Micro-optics on optoelectronics

Publications (2)

Publication Number Publication Date
KR20070004774A KR20070004774A (ko) 2007-01-09
KR101194452B1 true KR101194452B1 (ko) 2012-10-24

Family

ID=34746192

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067019870A Expired - Lifetime KR101194452B1 (ko) 2004-02-27 2005-02-25 광전자 기기 상의 마이크로 광학 기기

Country Status (9)

Country Link
US (1) US7457490B2 (https=)
EP (2) EP1569276A1 (https=)
JP (1) JP4903685B2 (https=)
KR (1) KR101194452B1 (https=)
CN (1) CN1947254B (https=)
AT (1) ATE498910T1 (https=)
DE (1) DE602005026367D1 (https=)
TW (1) TWI362058B (https=)
WO (1) WO2005083789A2 (https=)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297548B1 (en) 1998-06-30 2001-10-02 Micron Technology, Inc. Stackable ceramic FBGA for high thermal applications
JP2009516913A (ja) * 2005-11-22 2009-04-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光モジュール及びその製造方法
JP2007258672A (ja) * 2006-02-22 2007-10-04 Sharp Corp 発光ダイオード及びその製造方法
JP4765663B2 (ja) * 2006-02-23 2011-09-07 パナソニック電工株式会社 赤外線通信用モジュールの製造方法
US7785915B2 (en) * 2006-10-30 2010-08-31 Aptina Imaging Corporation Wafer level method of locating focal plane of imager devices
US20080181558A1 (en) * 2007-01-31 2008-07-31 Hartwell Peter G Electronic and optical circuit integration through wafer bonding
US7754600B2 (en) 2007-03-01 2010-07-13 Hewlett-Packard Development Company, L.P. Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices
US20090032925A1 (en) * 2007-07-31 2009-02-05 England Luke G Packaging with a connection structure
US20100323105A1 (en) 2007-08-31 2010-12-23 Shigeru Hosoe Molding method, optical element manufacturing method, and arrayed optical element
ES2347023T3 (es) * 2007-11-13 2010-10-22 Oy M. Haloila Ab Dispositivo de suministro de pelicula y uso del mismo.
TWI478808B (zh) 2007-12-19 2015-04-01 Heptagon Micro Optics Pte Ltd 製造光學元件的方法
TWI481496B (zh) 2007-12-19 2015-04-21 Heptagon Micro Optics Pte Ltd 製造光學元件的方法
SG142321A1 (en) 2008-04-24 2009-11-26 Micron Technology Inc Pre-encapsulated cavity interposer
GB2460822A (en) * 2008-06-03 2009-12-16 Cambridge Display Tech Ltd Organic electroluminescent device
US7920342B2 (en) * 2008-07-01 2011-04-05 Aptina Imaging Corporation Over-molded glass lenses and method of forming the same
US8542310B2 (en) 2008-07-04 2013-09-24 Konica Minolta Opto, Inc. Imaging lens, manufacturing method and imaging unit therefor
CN101364568B (zh) * 2008-07-10 2011-11-30 旭丽电子(广州)有限公司 镜头模块的制造方法及以该方法所制成的镜头模块
TWI419557B (zh) * 2008-07-11 2013-12-11 Lite On Electronics Guangzhou 鏡頭模組、其製作方法及形成多個鏡頭模組的晶圓結構
WO2010020062A1 (en) 2008-08-20 2010-02-25 Heptagon Oy Method of manufacturing a pluralty of optical devices
JP5715747B2 (ja) * 2008-09-30 2015-05-13 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置およびその製造方法
US20110187878A1 (en) * 2010-02-02 2011-08-04 Primesense Ltd. Synchronization of projected illumination with rolling shutter of image sensor
WO2011156926A1 (en) 2010-06-14 2011-12-22 Heptagon Oy Method of manufacturing a plurality of optical devices
CN103975436B (zh) 2011-07-19 2019-05-10 新加坡恒立私人有限公司 制造无源光学器件和包含该无源光学器件的装置的方法
SG193151A1 (en) 2011-07-19 2013-09-30 Heptagon Micro Optics Pte Ltd Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same
WO2013020238A1 (en) * 2011-08-10 2013-02-14 Heptagon Micro Optics Pte. Ltd. Opto-electronic module and method for manufacturing the same
DE102011113483B4 (de) * 2011-09-13 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement
CN103959465B (zh) * 2011-10-06 2019-06-07 新加坡恒立私人有限公司 用于物体的晶片级制造的方法以及相应的中间产品
CN104106135B (zh) * 2011-12-22 2018-02-23 新加坡恒立私人有限公司 光电模块、尤其是闪光灯模块及其制造方法
JP5985661B2 (ja) 2012-02-15 2016-09-06 アップル インコーポレイテッド 走査深度エンジン
US9329080B2 (en) 2012-02-15 2016-05-03 Aplle Inc. Modular optics for scanning engine having beam combining optics with a prism intercepted by both beam axis and collection axis
US9634051B2 (en) 2012-07-17 2017-04-25 Heptagon Micro Optics Pte. Ltd. Optical devices, in particular computational cameras, and methods for manufacturing the same
TW201417250A (zh) * 2012-07-17 2014-05-01 海特根微光學公司 光學模組,特別是光電模組,及其製造方法
TWI707483B (zh) 2012-07-17 2020-10-11 新加坡商新加坡恒立私人有限公司 發射可變強度分布的光線的光電模組
TWM448798U (zh) * 2012-08-10 2013-03-11 麥瑟半導體股份有限公司 光學元件封裝模組
DE102012109183A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronische Vorrichtung
US8606057B1 (en) 2012-11-02 2013-12-10 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including electrically conductive connections for integration with an electronic device
US10403671B2 (en) * 2013-12-10 2019-09-03 Ams Sensors Singapore Pte. Ltd. Wafer-level optical modules and methods for manufacturing the same
WO2016068876A1 (en) 2014-10-28 2016-05-06 Hewlett Packard Enterprise Development Lp Photonic interposer with wafer bonded microlenses
DE102014116134A1 (de) 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
EP3243119A1 (de) 2015-01-06 2017-11-15 Huf Hülsbeck & Fürst GmbH & Co. KG Optische vorrichtung zur belichtung einer sensorvorrichtung für ein fahrzeug
RU2713080C1 (ru) 2015-10-01 2020-02-03 Конинклейке Филипс Н.В. Светоизлучающее устройство
DE102016103123A1 (de) * 2016-02-23 2017-08-24 Vishay Semiconductor Gmbh Optoelektronische Vorrichtung
CN109155258B (zh) 2016-04-08 2022-04-26 赫普塔冈微光有限公司 具有孔径的薄光电模块及其制造
DE102017100997A1 (de) 2017-01-19 2018-07-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
KR102698883B1 (ko) * 2019-02-22 2024-08-28 삼성디스플레이 주식회사 표시장치 및 그의 제조방법
CN113557126B (zh) * 2019-03-12 2023-12-12 ams传感器新加坡私人有限公司 制造多个光学元件的方法及其产品
EP3986718B1 (en) 2019-06-24 2026-01-28 Magic Leap, Inc. Polymer patterned disk stack manufacturing
US10777611B1 (en) * 2019-09-27 2020-09-15 Sony Semiconductor Solutions Corporation Image sensor
US11747555B2 (en) 2021-10-04 2023-09-05 Eagle Technology, Llc Optical assembly having commonly-shaped optical modules and associated methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340480A (ja) 1998-05-21 1999-12-10 Tokai Rika Co Ltd プラスティックパッケージ
KR100371477B1 (ko) 1999-03-29 2003-02-06 캐논 가부시끼가이샤 미세구조 어레이, 미세구조 어레이의 형성 방법 및 장치,및 미세구조 어레이를 제조하기 위한 주형
JP2003298012A (ja) 2002-01-30 2003-10-17 Nippon Hoso Kyokai <Nhk> 半導体装置およびその製造方法
JP2004063751A (ja) 2002-07-29 2004-02-26 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103483A (en) * 1980-01-21 1981-08-18 Fuji Photo Film Co Ltd Manufacture of semiconductor device for photoelectric conversion
JPH07111343A (ja) * 1993-10-13 1995-04-25 Matsushita Electron Corp 光電装置
US20020053742A1 (en) * 1995-09-01 2002-05-09 Fumio Hata IC package and its assembly method
US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
JP2000275405A (ja) * 1999-03-29 2000-10-06 Canon Inc マイクロ構造体アレイの作製方法、マイクロレンズアレイ用金型の作製方法、及びこれを用いたマイクロレンズアレイの作製方法
TW588414B (en) * 2000-06-08 2004-05-21 Toshiba Corp Alignment method, overlap inspecting method and mask
US20040012698A1 (en) * 2001-03-05 2004-01-22 Yasuo Suda Image pickup model and image pickup device
JP2002353763A (ja) * 2001-05-29 2002-12-06 Mitsubishi Electric Corp 圧電素子デバイスの製造方法
GB0213722D0 (en) * 2002-06-14 2002-07-24 Suisse Electronique Microtech Micro electrical mechanical systems
US7414661B2 (en) * 2002-08-13 2008-08-19 Micron Technology, Inc. CMOS image sensor using gradient index chip scale lenses
JP4241457B2 (ja) * 2003-06-26 2009-03-18 富士ゼロックス株式会社 レンズ付き発光素子の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340480A (ja) 1998-05-21 1999-12-10 Tokai Rika Co Ltd プラスティックパッケージ
KR100371477B1 (ko) 1999-03-29 2003-02-06 캐논 가부시끼가이샤 미세구조 어레이, 미세구조 어레이의 형성 방법 및 장치,및 미세구조 어레이를 제조하기 위한 주형
JP2003298012A (ja) 2002-01-30 2003-10-17 Nippon Hoso Kyokai <Nhk> 半導体装置およびその製造方法
JP2004063751A (ja) 2002-07-29 2004-02-26 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法

Also Published As

Publication number Publication date
CN1947254A (zh) 2007-04-11
DE602005026367D1 (de) 2011-03-31
US7457490B2 (en) 2008-11-25
EP1719178A2 (en) 2006-11-08
EP1719178B1 (en) 2011-02-16
WO2005083789A2 (en) 2005-09-09
JP4903685B2 (ja) 2012-03-28
CN1947254B (zh) 2010-12-29
EP1569276A1 (en) 2005-08-31
JP2007524243A (ja) 2007-08-23
TW200532761A (en) 2005-10-01
KR20070004774A (ko) 2007-01-09
WO2005083789A3 (en) 2006-05-11
ATE498910T1 (de) 2011-03-15
US20070009223A1 (en) 2007-01-11
TWI362058B (en) 2012-04-11

Similar Documents

Publication Publication Date Title
KR101194452B1 (ko) 광전자 기기 상의 마이크로 광학 기기
US10527762B2 (en) Method for manufacturing passive optical components, and devices comprising the same
EP2659510B1 (en) Method for manufacturing opto-electronic modules
CN104335340B (zh) 晶片堆叠的组装
US6987619B2 (en) Lens array package and fabrication method
JP6987907B2 (ja) 装置の、特に光学装置のウェーハレベル方法
EP3341974B1 (en) Optical assemblies including a spacer adhering directly to a substrate
CN104937445B (zh) 光学元件制造以及并入有所述光学元件的模块
US20070110361A1 (en) Wafer level integration of multiple optical elements
CN113906319A (zh) 复制光学元件的方法和复制的光学元件

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20151008

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20161007

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20171005

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20181010

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20250226

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION