TWI362058B - Micro-optics on optoelectronics - Google Patents

Micro-optics on optoelectronics Download PDF

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Publication number
TWI362058B
TWI362058B TW094105676A TW94105676A TWI362058B TW I362058 B TWI362058 B TW I362058B TW 094105676 A TW094105676 A TW 094105676A TW 94105676 A TW94105676 A TW 94105676A TW I362058 B TWI362058 B TW I362058B
Authority
TW
Taiwan
Prior art keywords
optical
wafer
layer
active
transparent material
Prior art date
Application number
TW094105676A
Other languages
English (en)
Chinese (zh)
Other versions
TW200532761A (en
Inventor
Hartmut Rudmann
Markus Rossi
Original Assignee
Heptagon Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heptagon Oy filed Critical Heptagon Oy
Publication of TW200532761A publication Critical patent/TW200532761A/zh
Application granted granted Critical
Publication of TWI362058B publication Critical patent/TWI362058B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Optical Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Hybrid Cells (AREA)
  • Optical Measuring Cells (AREA)
TW094105676A 2004-02-27 2005-02-24 Micro-optics on optoelectronics TWI362058B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04405110A EP1569276A1 (en) 2004-02-27 2004-02-27 Micro-optics on optoelectronics

Publications (2)

Publication Number Publication Date
TW200532761A TW200532761A (en) 2005-10-01
TWI362058B true TWI362058B (en) 2012-04-11

Family

ID=34746192

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105676A TWI362058B (en) 2004-02-27 2005-02-24 Micro-optics on optoelectronics

Country Status (9)

Country Link
US (1) US7457490B2 (https=)
EP (2) EP1569276A1 (https=)
JP (1) JP4903685B2 (https=)
KR (1) KR101194452B1 (https=)
CN (1) CN1947254B (https=)
AT (1) ATE498910T1 (https=)
DE (1) DE602005026367D1 (https=)
TW (1) TWI362058B (https=)
WO (1) WO2005083789A2 (https=)

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Also Published As

Publication number Publication date
CN1947254A (zh) 2007-04-11
DE602005026367D1 (de) 2011-03-31
US7457490B2 (en) 2008-11-25
EP1719178A2 (en) 2006-11-08
EP1719178B1 (en) 2011-02-16
WO2005083789A2 (en) 2005-09-09
JP4903685B2 (ja) 2012-03-28
CN1947254B (zh) 2010-12-29
EP1569276A1 (en) 2005-08-31
JP2007524243A (ja) 2007-08-23
TW200532761A (en) 2005-10-01
KR20070004774A (ko) 2007-01-09
WO2005083789A3 (en) 2006-05-11
ATE498910T1 (de) 2011-03-15
KR101194452B1 (ko) 2012-10-24
US20070009223A1 (en) 2007-01-11

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