KR101189642B1 - 원자층 증착법을 이용한 ＴｉＳｉＮ 박막의 형성방법 - Google Patents

원자층 증착법을 이용한 ＴｉＳｉＮ 박막의 형성방법 Download PDF

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KR101189642B1
KR101189642B1 KR1020120036505A KR20120036505A KR101189642B1 KR 101189642 B1 KR101189642 B1 KR 101189642B1 KR 1020120036505 A KR1020120036505 A KR 1020120036505A KR 20120036505 A KR20120036505 A KR 20120036505A KR 101189642 B1 KR101189642 B1 KR 101189642B1
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containing gas
tisin
supplying
film
torr
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Korean (ko)
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박웅
장영진
김기열
루 브라이언
시우 그레그
실바 유고
라마나탄 사산간
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아익스트론 에스이
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Priority to TW102112318A priority patent/TWI572735B/zh
Priority to PCT/EP2013/057308 priority patent/WO2013153031A1/en
Priority to JP2015503899A priority patent/JP6200487B2/ja
Priority to US14/391,294 priority patent/US9159608B2/en
Assigned to 유제누스 인크. reassignment 유제누스 인크. 권리의 전부이전등록 Assignors: 아익스트론 에스이
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020120036505A 2012-04-09 2012-04-09 원자층 증착법을 이용한 ＴｉＳｉＮ 박막의 형성방법 Active KR101189642B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020120036505A KR101189642B1 (ko) 2012-04-09 2012-04-09 원자층 증착법을 이용한 ＴｉＳｉＮ 박막의 형성방법
TW102112318A TWI572735B (zh) 2012-04-09 2013-04-08 利用原子層沉積形成ＴｉＳｉＮ薄層之方法
PCT/EP2013/057308 WO2013153031A1 (en) 2012-04-09 2013-04-08 METHOD FOR FORMING TiSin THIN LAYER BY USING ATOMIC LAYER DEPOSITION
JP2015503899A JP6200487B2 (ja) 2012-04-09 2013-04-08 原子層堆積法の使用によるＴｉＳｉＮ薄層の形成方法
US14/391,294 US9159608B2 (en) 2012-04-09 2013-04-08 Method for forming TiSiN thin film layer by using atomic layer deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120036505A KR101189642B1 (ko) 2012-04-09 2012-04-09 원자층 증착법을 이용한 ＴｉＳｉＮ 박막의 형성방법

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KR101189642B1 true KR101189642B1 (ko) 2012-10-12

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Country Status (5)

Country Link
US (1) US9159608B2 (https=)
JP (1) JP6200487B2 (https=)
KR (1) KR101189642B1 (https=)
TW (1) TWI572735B (https=)
WO (1) WO2013153031A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180016951A (ko) * 2016-08-08 2018-02-20 도쿄엘렉트론가부시키가이샤 실리콘 질화막의 성막 방법 및 성막 장치
US11282939B2 (en) 2018-06-12 2022-03-22 Samsung Electronics Co., Ltd. Semiconductor device including work function adjusting metal gate structure
US11289487B2 (en) 2018-02-23 2022-03-29 Micron Technology, Inc. Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods
US12278108B2 (en) 2019-09-18 2025-04-15 Kokusai Electric Corporation Substrate processing method, method of manufacturing semiconductor device, non- transitory computer-readable recording medium and substrate processing apparatus
KR102957502B1 (ko) * 2019-09-18 2026-04-27 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 장치

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JP2015193878A (ja) * 2014-03-31 2015-11-05 東京エレクトロン株式会社 ＴｉＳｉＮ膜の成膜方法および成膜装置
US9881865B1 (en) 2016-07-27 2018-01-30 Samsung Electronics Co., Ltd. Semiconductor devices including electrically isolated patterns and method of fabricating the same
US10151029B2 (en) * 2016-08-08 2018-12-11 Tokyo Electron Limited Silicon nitride film forming method and silicon nitride film forming apparatus
KR102490696B1 (ko) 2016-11-07 2023-01-19 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR20180107806A (ko) * 2017-03-22 2018-10-04 삼성전자주식회사 막 형성 방법, 및 이를 이용한 가변 저항 메모리 소자의 제조방법
KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
US11401607B2 (en) * 2017-06-02 2022-08-02 Eugenus, Inc. TiSiN coating method
US11942365B2 (en) 2017-06-02 2024-03-26 Eugenus, Inc. Multi-region diffusion barrier containing titanium, silicon and nitrogen
US10665685B2 (en) * 2017-11-30 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and fabrication method thereof
JP6789257B2 (ja) * 2018-02-28 2020-11-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7109310B2 (ja) 2018-08-23 2022-07-29 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2021031686A (ja) * 2019-08-15 2021-03-01 東京エレクトロン株式会社 成膜方法及び成膜装置
US11587784B2 (en) 2019-10-08 2023-02-21 Eugenus, Inc. Smooth titanium nitride layers and methods of forming the same
US11361992B2 (en) 2019-10-08 2022-06-14 Eugenus, Inc. Conformal titanium nitride-based thin films and methods of forming same
US12444648B2 (en) 2019-10-08 2025-10-14 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
US11832537B2 (en) * 2019-10-08 2023-11-28 Eugenus, Inc. Titanium silicon nitride barrier layer
US12431388B2 (en) 2019-10-08 2025-09-30 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
CN114141605A (zh) * 2020-09-04 2022-03-04 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
KR20230165332A (ko) * 2021-04-07 2023-12-05 유제누스 인크. 컨포멀 티타늄 실리콘 질화물-기반 박막 및 이를 형성하는 방법
TW202334482A (zh) * 2021-12-03 2023-09-01 美商應用材料股份有限公司 用以形成金屬氮化矽膜的nh自由基熱氮化
KR20230097466A (ko) * 2021-12-24 2023-07-03 주식회사 원익아이피에스 박막 형성 방법
KR20230147330A (ko) 2022-04-14 2023-10-23 삼성전자주식회사 반도체 장치 및 이의 제조 방법
TWI892024B (zh) * 2022-06-30 2025-08-01 南亞科技股份有限公司 半導體元件的製造方法
CN115985764A (zh) * 2022-12-15 2023-04-18 拓荆科技股份有限公司 一种半导体阻挡层的制备方法及阻挡层薄膜

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KR100983165B1 (ko) 1999-12-09 2010-09-20 도쿄엘렉트론가부시키가이샤 티탄실리콘나이트라이드막의 성막방법 및 반도체장치의 제조방법
AU2001255358A1 (en) * 2000-04-13 2001-10-30 Gelest, Inc. Methods for chemical vapor deposition of titanium-silicon-nitrogen films
KR20030062365A (ko) * 2000-12-12 2003-07-23 동경 엘렉트론 주식회사 박막 형성 방법 및 박막 형성 장치
US6596643B2 (en) * 2001-05-07 2003-07-22 Applied Materials, Inc. CVD TiSiN barrier for copper integration
US6911391B2 (en) * 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
JP4621241B2 (ja) * 2002-03-18 2011-01-26 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP2003332426A (ja) * 2002-05-17 2003-11-21 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2005011940A (ja) * 2003-06-18 2005-01-13 Tokyo Electron Ltd 基板処理方法、半導体装置の製造方法および半導体装置
US7235482B2 (en) * 2003-09-08 2007-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US20060182885A1 (en) * 2005-02-14 2006-08-17 Xinjian Lei Preparation of metal silicon nitride films via cyclic deposition
KR100956210B1 (ko) * 2007-06-19 2010-05-04 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 금속 실리콘 질화물 박막의 플라즈마 강화 사이클릭증착방법
US7833906B2 (en) * 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180016951A (ko) * 2016-08-08 2018-02-20 도쿄엘렉트론가부시키가이샤 실리콘 질화막의 성막 방법 및 성막 장치
KR102334581B1 (ko) * 2016-08-08 2021-12-06 도쿄엘렉트론가부시키가이샤 실리콘 질화막의 성막 방법 및 성막 장치
US11289487B2 (en) 2018-02-23 2022-03-29 Micron Technology, Inc. Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods
US12507395B2 (en) 2018-02-23 2025-12-23 Micron Technology, Inc. Doped titanium nitride materials for dram capacitors, and related semiconductor devices
US11282939B2 (en) 2018-06-12 2022-03-22 Samsung Electronics Co., Ltd. Semiconductor device including work function adjusting metal gate structure
US11967630B2 (en) 2018-06-12 2024-04-23 Samsung Electronics Co., Ltd. Semiconductor device including work function adjusting metal gate structure
US12278108B2 (en) 2019-09-18 2025-04-15 Kokusai Electric Corporation Substrate processing method, method of manufacturing semiconductor device, non- transitory computer-readable recording medium and substrate processing apparatus
KR102957502B1 (ko) * 2019-09-18 2026-04-27 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 장치

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Publication number Publication date
WO2013153031A1 (en) 2013-10-17
JP6200487B2 (ja) 2017-09-20
US9159608B2 (en) 2015-10-13
TW201350607A (zh) 2013-12-16
TWI572735B (zh) 2017-03-01
JP2015514161A (ja) 2015-05-18
US20150050806A1 (en) 2015-02-19

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